標(biāo)題: Titlebook: Einstein Relation in Compound Semiconductors and Their Nanostructures; Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,Deba Book 2009 Spring [打印本頁(yè)] 作者: 轉(zhuǎn)變 時(shí)間: 2025-3-21 17:12
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures影響因子(影響力)
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures被引頻次
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures被引頻次學(xué)科排名
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures年度引用
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures年度引用學(xué)科排名
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures讀者反饋
書(shū)目名稱(chēng)Einstein Relation in Compound Semiconductors and Their Nanostructures讀者反饋學(xué)科排名
作者: remission 時(shí)間: 2025-3-21 22:00
Book 2009nd their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. .作者: Intervention 時(shí)間: 2025-3-22 03:11 作者: 徹底檢查 時(shí)間: 2025-3-22 08:25
Kamakhya Prasad Ghatak,Sitangshu Bhattacharya,DebaFirst book on the Einstein relation in compound semiconductors.Covers the basic physics and applications to nanodevices, dispersion and various physical conditions.Both a reference work for researcher作者: 迅速成長(zhǎng) 時(shí)間: 2025-3-22 12:30 作者: Priapism 時(shí)間: 2025-3-22 16:51 作者: Priapism 時(shí)間: 2025-3-22 20:19 作者: 退潮 時(shí)間: 2025-3-22 22:30
Ged?chtnisschrift für Theo Mayer-Maly1]. These materials find extensive use in non-linear optical elements [2], photodetectors[3] and light emitting diodes [4]. Rowe and Shay [5] showed that the quasi-cubic model [6] can be used to explain the observed splitting and symmetry properties of the band structure at the zone center of . spac作者: acclimate 時(shí)間: 2025-3-23 02:27
Ged?chtnisst?rungen bei Epilepsientizing magnetic field on the band structure of compound semiconductors are more striking and can be observed easily in experiments. Under magnetic quantization, the motion of the electron parallel to the magnetic field remains unaltered while the area of the wave vector space perpendicular to the di作者: colostrum 時(shí)間: 2025-3-23 07:26
Ged?chtnistheorien und Mnemotechnikentively less investigated as compared with the corresponding magnetic quantization, although, the cross fields are fundamental with respect to the addition of new physics and the related experimental findings. It is well known that in the presence of an electric field (. .) along the .-axis and the q作者: 字的誤用 時(shí)間: 2025-3-23 10:27
Ged?chtnistraining in der Erwachsenenbildungerimental techniques, the restriction of the motion of the carriers of bulk materials in one (ultrathin films, quantum wells, nipi structures, inversion layers, accumulation layers), two (quantum wires), and three (quantum dots, magnetosize quantized systems, magneto inversion layers, magneto accumu作者: 駭人 時(shí)間: 2025-3-23 14:45
Wolfgang Staffen,Klaus-Dieter Kieslingerby two infinitely deep 1D rectangular potential wells, along any two orthogonal directions leading to the quantization of the wave vectors along the said directions, allowing 1D carrier transport [1]. With the help of modern fabricational techniques, such one dimensional quantized structures have be作者: acclimate 時(shí)間: 2025-3-23 18:21 作者: 類(lèi)人猿 時(shí)間: 2025-3-23 23:23 作者: growth-factor 時(shí)間: 2025-3-24 03:20 作者: META 時(shí)間: 2025-3-24 08:11 作者: 同謀 時(shí)間: 2025-3-24 14:08
https://doi.org/10.1007/978-3-0348-5022-3 the impurity band with the conduction and valence bands [1]. Kane [2] and Bonch Bruevich [3] have independently derived the theory of band tailing for semiconductors having unperturbed parabolic energy bands. Kane‘s model [2] was used to explain the experimental results on tunneling [4] and the opt作者: Perennial長(zhǎng)期的 時(shí)間: 2025-3-24 17:48
Kurze Geschichte des Westharzer Bergbaususted Boltzmann transport equation. Such studies are extremely useful for practical analysis of the physical properties of semiconductor devices, in general..Our analyses are valid under single electron approximation and invalid for totally quantized 3D wave vector space. The quantitative comparison作者: EPT 時(shí)間: 2025-3-24 21:40 作者: Accomplish 時(shí)間: 2025-3-25 00:13 作者: nonradioactive 時(shí)間: 2025-3-25 06:17 作者: MITE 時(shí)間: 2025-3-25 11:05 作者: jungle 時(shí)間: 2025-3-25 14:04 作者: mitten 時(shí)間: 2025-3-25 19:14 作者: aesthetician 時(shí)間: 2025-3-25 23:10 作者: GONG 時(shí)間: 2025-3-26 02:37
The Einstein Relation in Quantum Wires of Compound Semiconductors,by two infinitely deep 1D rectangular potential wells, along any two orthogonal directions leading to the quantization of the wave vectors along the said directions, allowing 1D carrier transport [1]. With the help of modern fabricational techniques, such one dimensional quantized structures have be作者: Polydipsia 時(shí)間: 2025-3-26 05:55
The Einstein Relation in Inversion Layers of Compound Semiconductors,a one dimensional potential well whose width is of the order of the carrier wavelength, the motion in that particular direction gets quantized while that along the other two directions remains as free. Thus, the energy spectrum appears in the shape of discrete levels for the one dimensional quantiza作者: Abnormal 時(shí)間: 2025-3-26 10:16
The Einstein Relation in Nipi Structures of Compound Semiconductors,alternative layers of two different degenerate layers with controlled thickness [1]. These structures have found wide applications in many new devices such as photodiodes [2], photoresistors [3], transistors [4], light emitters [5], tunneling devices [6], etc. [7–18]. The investigations of the physi作者: 虛情假意 時(shí)間: 2025-3-26 13:10
The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Field by Esaki and Tsu [2]. The importance of SLs in the field of nanoelectron-ics have already been described in [3–5]. The most extensively studied III–V SL is the one consisting of alternate layers of GaAs and Ga.Al.As owing to the relative ease of fabrication. The GaAs layers form quantum wells and G作者: 范圍廣 時(shí)間: 2025-3-26 18:00
The Einstein Relation in Compound Semiconductors in the Presence of Light Waves, [1]. It appears from the literature, that the investigations have been carried out on the assumption that the carrier energy spectra are invariant quantities in the presence of intense light waves, which is not fundamentally true. The physical properties of semiconductors in the presence of light w作者: 挖掘 時(shí)間: 2025-3-27 00:18 作者: ORBIT 時(shí)間: 2025-3-27 02:21
Conclusion and Future Research,usted Boltzmann transport equation. Such studies are extremely useful for practical analysis of the physical properties of semiconductor devices, in general..Our analyses are valid under single electron approximation and invalid for totally quantized 3D wave vector space. The quantitative comparison作者: consent 時(shí)間: 2025-3-27 06:12
Der junge G?rres als ?Cisrhenane“nly under non-degenerate carrier concentration although its validity has been suggested erroneously for degenerate materials [4]. Landsberg first pointed out that the DMR for semiconductors having degenerate electron concentration are essentially determined by their energy band structures [5, 6]. Th作者: Neuropeptides 時(shí)間: 2025-3-27 13:15
Ged?chtnisschrift für Theo Mayer-Malyate that the fact that the conduction band in the same materials corresponds to a single ellipsoidal revolution at the zone center in k-space [1, 8]. Introducing the crystal potential in theHamiltonian, Bodnar [9] derived the electron dispersion relation in the same material under the assumption of 作者: RENAL 時(shí)間: 2025-3-27 14:11
Ged?chtnisst?rungen bei Epilepsienr by solving the single-particle time independent Schrodinger differential equation in the presence of a quantizing magnetic field or by using the operator method. The quantizing magnetic field tends to remove the degeneracy and increases the band gap. A semiconductor, placed in a magnetic field .ca作者: Conquest 時(shí)間: 2025-3-27 21:31
Ged?chtnistheorien und Mnemotechnikenforbidden. The effective electron mass of the isotropic, bulk semiconductors having parabolic energy bands exhibits mass anisotropy in the presence of cross fields and this anisotropy depends on the electron energy, the magnetic quantum number, the electric and the magnetic fields respectively, alth作者: deadlock 時(shí)間: 2025-3-28 00:07
Ged?chtnistraining in der Erwachsenenbildunger confinement in an infinitely deep 1D rectangular potential well, leading to quantization [known as quantum size effect (QSE)] of the wave vector of the carrier along the direction of the potential well, allowing 2D carrier transport parallel to the surface of the film representing new physical fe作者: ingrate 時(shí)間: 2025-3-28 05:29
Wolfgang Staffen,Klaus-Dieter Kieslingerling diodes and band filters [11, 12], quantum switches [13], quantum sensors [14–16], quantum logic gates [17,18], quantum transistors and sub tuners [19–21], heterojunction FETs [22], highspeed digital networks [23], high-frequency microwave circuits [24], optical modulators [25], optical switchin作者: chiropractor 時(shí)間: 2025-3-28 09:07
https://doi.org/10.1007/978-1-137-08421-7face leading to a bending of the energy bands of the semiconductor near the surface. As a result, a one dimensional potential well is formed at the semiconductor interface. The spatial variation of the potential profile is so sharp that for considerable large values of the electric field, the width 作者: 小畫(huà)像 時(shí)間: 2025-3-28 14:11
Notes from a Geek Autobiography,pposite sign of doping. All the donors will be positively charged and all the acceptors negatively charged. This periodic space charge causes a periodic space charge potential which quantizes the motions of the carriers in the .-direction together with the formation of the subband energies. The elec作者: Dedication 時(shí)間: 2025-3-28 15:56 作者: 放牧 時(shí)間: 2025-3-28 19:35
De betekenis van het kunnen horen,tion electrons of III—V, ternary and quaternary materials in the presence of light waves whose unperturbed electron energy spectrum is described by the three band model of Kane. In the same section, we have studied the dispersion relations for the said materials in the presence of external photo-exc作者: Insatiable 時(shí)間: 2025-3-29 02:57
https://doi.org/10.1007/978-3-0348-5022-3t, the local impurity potential may be assumed to be a constant. In order to avoid these approximations, we have developed in this chapter the electron energy spectra for heavily doped semiconductors for studying the DMR based on the concept of the variation of the kinetic energy [1,9] of the electr作者: 玷污 時(shí)間: 2025-3-29 06:11
Kurze Geschichte des Westharzer Bergbauses of the different quantized materials which, in turn, control the key namely, the Boltzmann transport equation. In spite of such constraints, the new concepts, which have emerged from the present investigation, are really amazing in general and are discussed throughout the book.作者: spinal-stenosis 時(shí)間: 2025-3-29 09:11 作者: 豎琴 時(shí)間: 2025-3-29 13:53
The Einstein Relation in Bulk Specimens of Compound Semiconductors,ate that the fact that the conduction band in the same materials corresponds to a single ellipsoidal revolution at the zone center in k-space [1, 8]. Introducing the crystal potential in theHamiltonian, Bodnar [9] derived the electron dispersion relation in the same material under the assumption of 作者: Congeal 時(shí)間: 2025-3-29 16:47
The Einstein Relation in Compound Semiconductors Under Magnetic Quantization,r by solving the single-particle time independent Schrodinger differential equation in the presence of a quantizing magnetic field or by using the operator method. The quantizing magnetic field tends to remove the degeneracy and increases the band gap. A semiconductor, placed in a magnetic field .ca作者: Eeg332 時(shí)間: 2025-3-29 21:17
The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration,forbidden. The effective electron mass of the isotropic, bulk semiconductors having parabolic energy bands exhibits mass anisotropy in the presence of cross fields and this anisotropy depends on the electron energy, the magnetic quantum number, the electric and the magnetic fields respectively, alth作者: 有抱負(fù)者 時(shí)間: 2025-3-30 02:54 作者: 蝕刻術(shù) 時(shí)間: 2025-3-30 06:32
The Einstein Relation in Quantum Wires of Compound Semiconductors,ling diodes and band filters [11, 12], quantum switches [13], quantum sensors [14–16], quantum logic gates [17,18], quantum transistors and sub tuners [19–21], heterojunction FETs [22], highspeed digital networks [23], high-frequency microwave circuits [24], optical modulators [25], optical switchin作者: contrast-medium 時(shí)間: 2025-3-30 11:33
