標(biāo)題: Titlebook: Effective Electron Mass in Low-Dimensional Semiconductors; Sitangshu Bhattacharya,Kamakhya Prasad Ghatak Book 2013 Springer-Verlag Berlin [打印本頁] 作者: 熱愛 時間: 2025-3-21 18:49
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors影響因子(影響力)
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors網(wǎng)絡(luò)公開度
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors被引頻次
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors被引頻次學(xué)科排名
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors年度引用
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors年度引用學(xué)科排名
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors讀者反饋
書目名稱Effective Electron Mass in Low-Dimensional Semiconductors讀者反饋學(xué)科排名
作者: 謊言 時間: 2025-3-21 23:49 作者: nautical 時間: 2025-3-22 01:00 作者: Herd-Immunity 時間: 2025-3-22 07:58
The EEM in Nonparabolic Semiconductors Under Magnetic Quantizationed either by solving the single-particle time-independent Schr?dinger differential equation in the presence of a quantizing magnetic field or by using the operator method. The quantizing magnetic field tends to remove the degeneracy and increases the band gap.作者: 變化無常 時間: 2025-3-22 11:31 作者: 婚姻生活 時間: 2025-3-22 13:23
Book 2013n this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirant作者: 婚姻生活 時間: 2025-3-22 19:46 作者: Debate 時間: 2025-3-22 22:00
The EEM in Ultrathin Films (UFs) of Nonparabolic SemiconductorsIt must be noted that among the various definitions of the effective electron mass (e.g effective acceleration mass, density-of-state effective mass, concentration effective mass, conductivity effective mass, Faraday rotation effective mass, etc) [2], it is the effective momentum mass that should be作者: Hemoptysis 時間: 2025-3-23 04:50
The EEM in Nipi Structures of Nonparabolic Semiconductors SL the periodic potential is due to a change in the band gap of two materials. In doping SLs, the periodicity is space-charge induced and in addition a homogeneous material is used. With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor 作者: glucagon 時間: 2025-3-23 08:07 作者: 盤旋 時間: 2025-3-23 12:08
The EEM in Nonparabolic Semiconductors Under Magnetic Quantizationtizing magnetic field on the band structure of compound semiconductors are more striking and can be observed easily in experiments. Under magnetic quantization, the motion of the electron parallel to the magnetic field remains unaltered while the area of the wave vector space perpendicular to the di作者: Ascendancy 時間: 2025-3-23 14:00
The EEM in Nanowires of Non-Parabolic Semiconductorswo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.作者: 產(chǎn)生 時間: 2025-3-23 21:33
The EEM in Quantum Confined Optoelectronic Semiconductors in the Presence of Light Waves It appears from the literature that the investigations have been carried out on the assumption that the carrier energy spectra are invariant quantities in the presence of intense light waves, which is not fundamentally true. The physical properties of semiconductors in the presence of light waves w作者: Encapsulate 時間: 2025-3-23 22:30 作者: 夜晚 時間: 2025-3-24 04:33 作者: frenzy 時間: 2025-3-24 10:16
Conclusion and Future Researchs under different physical conditions, in the presence of quantizing magnetic field and external photo excitation and also under strong electric field altering profoundly the basic band structures which, in turn, generate pin-pointed knowledge regarding EEM in various semiconductors and their nanost作者: Blazon 時間: 2025-3-24 13:24
The EEM in Nipi Structures of Nonparabolic Semiconductors a homogeneous material is used. With the advent of modern experimental techniques of fabricating nanomaterials, it is possible to grow semiconductor superlattices (SLs) composed of alternative layers of two different degenerate layers with controlled thickness.作者: BARK 時間: 2025-3-24 18:12
Applications and Brief Review of Experimental Results applications in this context in Section 8.2 and also present a very brief review of the experimental investigations in Section 8.3. The section 8.4 contains the single experimental open research problem.作者: 切碎 時間: 2025-3-24 19:03 作者: Albumin 時間: 2025-3-25 02:27 作者: 疲勞 時間: 2025-3-25 05:17 作者: Tartar 時間: 2025-3-25 10:57
https://doi.org/10.1007/978-3-663-05911-0 applications in this context in Section 8.2 and also present a very brief review of the experimental investigations in Section 8.3. The section 8.4 contains the single experimental open research problem.作者: 充氣球 時間: 2025-3-25 12:06
Book 2013ical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense elec作者: DUCE 時間: 2025-3-25 16:31 作者: 搜尋 時間: 2025-3-25 20:15
Die Kernaussagen auf einen Blick, mass which enters in various transport coefficients and plays the most dominant role in explaining the experimental results of different scattering mechanisms through Boltzmann’s transport equation [4,5]. The carrier degeneracy in semiconductors influences the effective mass when it is energy dependent.作者: affinity 時間: 2025-3-26 00:33 作者: 現(xiàn)暈光 時間: 2025-3-26 06:37
Effective Electron Mass in Low-Dimensional Semiconductors978-3-642-31248-9Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: jet-lag 時間: 2025-3-26 11:53 作者: JOG 時間: 2025-3-26 12:56
https://doi.org/10.1007/978-3-658-07047-2wo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.作者: 散布 時間: 2025-3-26 17:51 作者: foppish 時間: 2025-3-27 00:35
https://doi.org/10.1007/978-3-642-31248-9EEM book; EEM review; effective electron mass, EEM; low dimensional semiconductors; non-parabolic Semico作者: N斯巴達(dá)人 時間: 2025-3-27 01:10 作者: 改進(jìn) 時間: 2025-3-27 07:59
The EEM in Inversion Layers of Non-Parabolic Semiconductors a one dimensional potential well whose width is of the order of the carrier wavelength, the motion in that particular direction gets quantized while that along the other two directions remains as free.作者: 織布機(jī) 時間: 2025-3-27 12:17
The EEM in Nanowires of Non-Parabolic Semiconductorswo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.作者: inquisitive 時間: 2025-3-27 14:10
The EEM in the Presence of Intense Electric Fielddifferent band structures. It appears from the literature that the studies have been made on the assumption that the carrier dispersion laws are invariant quantities in the presence of intense electric field, which is not fundamentally true.作者: Colonoscopy 時間: 2025-3-27 19:19
Die Kernaussagen auf einen Blick,It must be noted that among the various definitions of the effective electron mass (e.g effective acceleration mass, density-of-state effective mass, concentration effective mass, conductivity effective mass, Faraday rotation effective mass, etc) [2], it is the effective momentum mass that should be作者: FER 時間: 2025-3-27 23:45 作者: 助記 時間: 2025-3-28 05:09 作者: ACTIN 時間: 2025-3-28 08:44 作者: judicial 時間: 2025-3-28 12:54
https://doi.org/10.1007/978-3-658-07047-2wo infinitely deep one-dimensional (1D) rectangular potential wells, along any two orthogonal directions leading to quantization of the wave vectors along the said directions, allowing 1D carrier transport.作者: 暫時別動 時間: 2025-3-28 16:10
