標題: Titlebook: Early Stages of Oxygen Precipitation in Silicon; R. Jones Book 1996 Kluwer Academic Publishers 1996 Magnetic Resonance.crystal.modeling.se [打印本頁] 作者: Jackson 時間: 2025-3-21 16:37
書目名稱Early Stages of Oxygen Precipitation in Silicon影響因子(影響力)
書目名稱Early Stages of Oxygen Precipitation in Silicon影響因子(影響力)學科排名
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書目名稱Early Stages of Oxygen Precipitation in Silicon被引頻次學科排名
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書目名稱Early Stages of Oxygen Precipitation in Silicon年度引用學科排名
書目名稱Early Stages of Oxygen Precipitation in Silicon讀者反饋
書目名稱Early Stages of Oxygen Precipitation in Silicon讀者反饋學科排名
作者: 金哥占卜者 時間: 2025-3-21 23:24
Fazit: Die Zukunft der Forschung,mpt frequencies are at least three orders of magnitude larger than expected for an atomic jump process. Our results require different core structures for TD1 and TD. with . ≥ 2 and large lattice relaxations, which accompany the dissociation of the TD - hydrogen complexes.作者: 調(diào)整 時間: 2025-3-22 02:32
https://doi.org/10.1007/978-3-658-30614-4rendering thermal donors electrically inactive. In a final part high temperature oxygen precipitation at grain boundaries will be dealt with which can lead to precipitates of a defined size in the range of 10–20 nm.作者: Binge-Drinking 時間: 2025-3-22 07:49 作者: 強所 時間: 2025-3-22 11:39 作者: 逢迎春日 時間: 2025-3-22 13:40
Low-Temperature Diffusion and Agglomeration of Oxygen in Silicon,rendering thermal donors electrically inactive. In a final part high temperature oxygen precipitation at grain boundaries will be dealt with which can lead to precipitates of a defined size in the range of 10–20 nm.作者: 逢迎春日 時間: 2025-3-22 19:14
1388-6576 al donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor- mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the mor作者: Forsake 時間: 2025-3-23 00:27
,Etablierte Gesch?ftsmodelle von Agenturen,has been known for a long time [1,2], there is not yet a clear picture about their microscopic structures. These “heat treatment centres” have been investigated with numerous experimental methods, amongst those also with magnetic resonance techniques being the most important structure sensitive tools.作者: 滔滔不絕地說 時間: 2025-3-23 01:52 作者: 多產(chǎn)魚 時間: 2025-3-23 06:28 作者: oxidant 時間: 2025-3-23 12:39 作者: 憤怒事實 時間: 2025-3-23 15:52 作者: Phenothiazines 時間: 2025-3-23 21:09 作者: 美麗的寫 時間: 2025-3-24 00:51
Hydrogen - Oxygen Interactions in Silicon,oming available from experiment as well as theory. This paper summarizes the experimental and theoretical work on H - 0 interactions, with emphasis on the issue of H-enhanced diffusion of interstitial 0. Preliminary results of molecular dynamics simulations are also presented.作者: 護航艦 時間: 2025-3-24 02:39 作者: 積習已深 時間: 2025-3-24 10:31
Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon,n. Grown-in defects in Czochralski-grown silicon seem to be divided into two kinds of defects. One causes the degradation of gate oxide integrity and the other acts as the nucleation centers for oxygen precipitation at relatively low temperatures. The generation processes of these kinds of defects are discussed.作者: 逗留 時間: 2025-3-24 13:03
Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment,) spectroscopy, or absorption and luminescence associated with electronic transitions involving the defect. In the course of this workshop, we will have the chance to learn in detail how each of these have contributed to our understanding of oxygen and its complexes in silicon.作者: MANIA 時間: 2025-3-24 17:07 作者: Comprise 時間: 2025-3-24 20:49 作者: FATAL 時間: 2025-3-25 00:52
The Role of Trivalent Oxygen in Electrically Active Complexes,ex. A third oxygen bond can also be formed in defect complexes with other impurities. Based on . calculations, stable complexes of trivalent oxygen with a Si self-interstitial (w/o the presence of hydrogen) or with nitrogen are predicted. The relation of these defects to thermal double donors and shallow thermal donors are discussed.作者: 并排上下 時間: 2025-3-25 07:17 作者: FLINT 時間: 2025-3-25 10:44 作者: 庇護 時間: 2025-3-25 15:38 作者: LUT 時間: 2025-3-25 16:58
Thermal Double Donors in Silicon: A New Insight into the Problem,viours of oxygen dimers and trimers, and the IR absorption bands at 1012 cm. and 1006 cm. is found. It is shown that some features of the enhanced oxygen diffusion and TDD generation are not consistent with a conception of the very fast diffusing oxygen dimers. Along with dimers the mobility of trimers and the first TDD species is suggested.作者: 倔強一點 時間: 2025-3-25 22:21 作者: Lethargic 時間: 2025-3-26 01:46
https://doi.org/10.1007/978-3-322-97057-2nterstitial generation is analysed and it is concluded that TD-defects cannot be 0.I. clusters with a large number of I-atoms. It has been proposed that TD defects, partially passivated with H (or D) atoms, give rise to the STD and NL10 spectra. Different spectra are generated in Al-doped Si.作者: itinerary 時間: 2025-3-26 06:09
Die Nachfrageseite des Baumarktes,also found that a (C-H)0. defect has very similar electronic properties, and this implies that shallow thermal donors do not have a unique composition. The structure and migration energy of the oxygen dimer is considered and the dimer is found to migrate very much faster than a single oxygen atom.作者: Brittle 時間: 2025-3-26 09:10
Besonderheiten der Bauproduktion,ex. A third oxygen bond can also be formed in defect complexes with other impurities. Based on . calculations, stable complexes of trivalent oxygen with a Si self-interstitial (w/o the presence of hydrogen) or with nitrogen are predicted. The relation of these defects to thermal double donors and shallow thermal donors are discussed.作者: inculpate 時間: 2025-3-26 15:23
https://doi.org/10.1007/978-3-663-10941-9 effect on the luminescence centres created in both float-zone (FZ) and CZ Si and that several luminescence centres actually contain hydrogen. It has also been demonstrated that these and other centres can be made optically inactive if too much hydrogen is present.作者: 攤位 時間: 2025-3-26 19:48
Book 1996 The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor- mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant作者: 無關(guān)緊要 時間: 2025-3-26 23:00
Infrared Studies of the Early Stages of Oxygen Clustering in Silicon,d, which originates from a type of oxygen precipitate. Different aspects of the TDs will be presented, such as results from samples doped with the O. isotope, the bistability of the first two appearing TDs, the influence on the TD formation process from other impurity atoms, from electron irradiatio作者: garrulous 時間: 2025-3-27 02:18
Magnetic Resonance Investigations of Thermal Donors in Silicon, the donor state. Both centers appear to exist in a large number of configurations, up to 17 have been reported, the versions with smaller binding energy and more isotropic g tensor developing upon increase of the heat treatment time. These very similar, but yet distinct, configurations are not reso作者: ORBIT 時間: 2025-3-27 05:39 作者: PHON 時間: 2025-3-27 12:07
The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy,ground state of the oxygen donor is constructed from the effective-mass wave functions associated with a single pair of conduction band valleys. In this paper, a survey of the piezospectroscopic results is presented.作者: Infant 時間: 2025-3-27 14:15 作者: eucalyptus 時間: 2025-3-27 17:45 作者: 血統(tǒng) 時間: 2025-3-27 22:15
Nachhaltigkeit — was hei?t das eigentlich the donor state. Both centers appear to exist in a large number of configurations, up to 17 have been reported, the versions with smaller binding energy and more isotropic g tensor developing upon increase of the heat treatment time. These very similar, but yet distinct, configurations are not reso作者: Sciatica 時間: 2025-3-28 02:55 作者: 絕種 時間: 2025-3-28 08:19 作者: placebo-effect 時間: 2025-3-28 13:50
Verhaltenswissenschaftliche Grundlagen, quasi-substitutional (off-centre or oxygen-vacancy) forms in GaAs and in Si. I will present a summary of the illumination effects observed for the oxygen-vacancy (OV.) in semi-insulating (SI) GaAs in relation with changes in the charge states and metastability of this centre. I will discuss finally作者: SEEK 時間: 2025-3-28 17:12
Book 1996e‘ what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra- red lattice absorption spectra over long duratio作者: 高歌 時間: 2025-3-28 21:50 作者: Wernickes-area 時間: 2025-3-29 01:04 作者: 無表情 時間: 2025-3-29 03:32
The Initial Stages of Oxygen Aggregation in Silicon: Dimers, Hydrogen and Self-Interstitials,tion effects and the apparent requirement for rapid dimer diffusion. Interactions of O. atoms with vacancies and self-interstitials (I-atoms) are re-examined and it is shown that the presence of hydrogen leads to enhanced O. diffusion that is the rate limiting step in the aggregation process. Self-i作者: Reservation 時間: 2025-3-29 09:33
Infrared Studies of the Early Stages of Oxygen Clustering in Silicon,ption bands. Several vibrational bands have been reported in the wavenumber range 975–1015 cm.. These bands correlate well with the formation of thermal donors (TDs). Bands at 975, 988 and 999 cm. have been found to be related to the three first appearing TDs. A band at 1006 cm. correlates with the 作者: DUST 時間: 2025-3-29 12:10
Magnetic Resonance Investigations of Thermal Donors in Silicon,with donor activity. By the method of electron paramagnetic resonance (EPR) two prominent spectra, labelled Si-NL8 and Si-NLIO, respectively, were observed and were associated to paramagnetic states of these centers. On the basis of angular dependent resonance patterns the centers were described wit作者: 緯度 時間: 2025-3-29 17:38
Magnetic Resonance of Heat Treatment Centres in Silicon,ing at a temperature of 450–460 °C “shallow” electrically active defects are formed which are often called “thermal donors”. Although their existence has been known for a long time [1,2], there is not yet a clear picture about their microscopic structures. These “heat treatment centres” have been in作者: 笨拙的我 時間: 2025-3-29 23:09
Effect of Hydrogen on Oxygen-Related Defect Reactions in Silicon at Elevated Temperatures,als. Hydrogen was introduced into the crystals by high-temperature (900–1200°C) annealing in hydrogen gas ambient or by exposure in hydrogen plasma at temperatures 350–450°C..The presence of hydrogen is found to influence significantly the behaviour of thermally- and radiation-induced defects and to作者: 沐浴 時間: 2025-3-30 00:59
Passivation of Thermal Donors by Atomic Hydrogen,ls. The TDs are completely reactivated at temperatures (. ≤ 200 °C) well below their formation temperature (. ≈ 450 °C). The dissociation of the hydrogen complexes is studied by means of infrared absorption, capacitance voltage profiling and deep level transient spectroscopy. Characteristic differen作者: 航海太平洋 時間: 2025-3-30 06:12
Oxygen-Carbon, Oxygen-Nitrogen and Oxygen-Dimer Defects in Silicon,re given for X-O. complexes where X is interstitial C, N or O. For . = 2, the first defect, C-O. has been assigned to the P-centre giving a PL line at 0.767 eV and seen in Cz-Si annealed around 450°C. The second, N-O., has properties consistent with a nitrogen related shallow thermal donor. We have 作者: countenance 時間: 2025-3-30 09:15 作者: Seminar 時間: 2025-3-30 14:13
Hydrogen - Oxygen Interactions in Silicon,s electrically inactive impurities, passivates many deep-level defects and some deep-level impurities, and creates its own electrically and optically active centers. Hydrogen also interacts with the A-center, and passivates O-related thermal donors (TDs) at low temperatures. However, the most exotic作者: 瑣事 時間: 2025-3-30 18:59
Oxygen Diffusion in Silicon: The Influence of Hydrogen, are extensively used in device applications. During thermal processing, depending on the processing parameters, the oxygen atoms aggregate to form clusters of various sizes and also Si0. precipitates [1]. The precipitation of oxygen leads to the formation of extended defects in the silicon wafer, i作者: 真繁榮 時間: 2025-3-31 00:10 作者: incarcerate 時間: 2025-3-31 01:24
The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy,gen donor” defects with concentrations up to lO.cm. [1, 2]. Since this early discovery there have been numerous studies performed to determine the oxygen donor’s structure and the mechanism for its formation [3,4]. In spite of a tremendous amount of effort, the atomic structure of the oxygen donor a作者: Conspiracy 時間: 2025-3-31 06:35 作者: 就職 時間: 2025-3-31 11:42
Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon,ilicon crystals. Dislocations act as preferential nucleation centers of precipitates. Morphology of precipitates on dislocations depends on the temperature at which precipitation takes place. Precipitation of silicon oxide on dislocations immobilizes the dislocations and brings about high mechanical作者: 溫和女人 時間: 2025-3-31 15:25
Various Forms of Isolated Oxygen in Semiconductors,lth of information is therefore available on isolated oxygen in silicon, but it seems difficult to extrapolate to oxygen in other semiconductors because of differences in chemical reactivities and lattice relaxations. The aim of this review is to try to compare the situation in silicon with that in
