標題: Titlebook: Dry Etching Technology for Semiconductors; Kazuo Nojiri Book 2015 Springer International Publishing Switzerland 2015 3D Integrated Circuit [打印本頁] 作者: 爆發(fā) 時間: 2025-3-21 17:40
書目名稱Dry Etching Technology for Semiconductors影響因子(影響力)
書目名稱Dry Etching Technology for Semiconductors影響因子(影響力)學科排名
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書目名稱Dry Etching Technology for Semiconductors網(wǎng)絡公開度學科排名
書目名稱Dry Etching Technology for Semiconductors被引頻次
書目名稱Dry Etching Technology for Semiconductors被引頻次學科排名
書目名稱Dry Etching Technology for Semiconductors年度引用
書目名稱Dry Etching Technology for Semiconductors年度引用學科排名
書目名稱Dry Etching Technology for Semiconductors讀者反饋
書目名稱Dry Etching Technology for Semiconductors讀者反饋學科排名
作者: rectum 時間: 2025-3-21 22:36
Mechanism of Dry Etching,ining the reaction processes. For that, one must first understand the mechanism of dry etching. This chapter starts with the basics of plasma and goes on to describe the dry etching reaction processes and the mechanism of anisotropic etching without relying on mathematical equations or difficult the作者: 漂泊 時間: 2025-3-22 01:50
Dry Etching of Various Materials,be categorized into (1) etching of Si, (2) etching of insulators, and (3) etching of metal line materials. In this chapter, the key technologies in each category—which are gate etching, SiO. etching for holes, spacer etching, and etching of Al alloy stacked metal layer structures—are described in de作者: obviate 時間: 2025-3-22 05:07
Dry Etching Equipment,lasma density, operating pressure conditions, and key characteristics of dry etching equipment used in LSI manufacturing today, including the barrel-type plasma etcher, capacitively coupled plasma (CCP) etcher, magnetron reactive-ion etching (RIE), electron-cyclotron resonance (ECR) plasma etcher, a作者: Needlework 時間: 2025-3-22 09:58 作者: RAGE 時間: 2025-3-22 14:16 作者: RAGE 時間: 2025-3-22 18:28 作者: 發(fā)芽 時間: 2025-3-22 23:38
Book 2015 and gas chemistry are used for the etching of each material, and how to develop etching processes.?The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.作者: 即席 時間: 2025-3-23 02:31
Islam, Europe, and the Problem of Peace/poly–Si gate. Once the reader understands these completely, then a similar approach may be followed for designing an etching process for shallow trench isolation (STI) and W metal lines. Also, with gate etching, there is a strong need not only to control the etch profile, but also to minimize the p作者: Ischemia 時間: 2025-3-23 05:47 作者: Substance 時間: 2025-3-23 12:53 作者: GROSS 時間: 2025-3-23 14:13
Dry Etching of Various Materials,/poly–Si gate. Once the reader understands these completely, then a similar approach may be followed for designing an etching process for shallow trench isolation (STI) and W metal lines. Also, with gate etching, there is a strong need not only to control the etch profile, but also to minimize the p作者: Gastric 時間: 2025-3-23 18:49
Future Challenges and Outlook for Dry Etching Technology,ume production. This means that minimum feature sizes were scaled to 1/200 in 36 years. At the same time, the number of transistors on each microprocessor chip grew by approximately 100,000-fold. Furthermore, the Si wafer diameter, which used to be 75 mm in 1975, had grown to 300 mm. It is a differe作者: botany 時間: 2025-3-24 01:02 作者: LINES 時間: 2025-3-24 04:34 作者: 發(fā)怨言 時間: 2025-3-24 08:36 作者: gorgeous 時間: 2025-3-24 10:44
Giuseppe Rossi,Bartolomeo Rejtanoin this technology. However, because the process uses plasma, the devices are susceptible to various types of damages caused by high-energy and charged particles. A large amount of damage sometimes lowers the LSI yields and reliability.作者: morale 時間: 2025-3-24 15:26
Anna Budzanowska,Tomasz Pietrzykowskiis underpinned by various large-scale integration (LSI) devices such as microprocessors and memory. The LSI technology is advancing very rapidly, as shown in Fig. 1.1, with the device density doubling approximately every 2 years [1]. The transistor count in Fig. 1.1 refers to the number of transisto作者: shrill 時間: 2025-3-24 19:05 作者: 弄皺 時間: 2025-3-24 23:40
Islam, Europe, and the Problem of Peacebe categorized into (1) etching of Si, (2) etching of insulators, and (3) etching of metal line materials. In this chapter, the key technologies in each category—which are gate etching, SiO. etching for holes, spacer etching, and etching of Al alloy stacked metal layer structures—are described in de作者: 小平面 時間: 2025-3-25 04:49 作者: 間接 時間: 2025-3-25 11:18 作者: Brochure 時間: 2025-3-25 12:44 作者: Root494 時間: 2025-3-25 17:53 作者: 豐滿中國 時間: 2025-3-25 23:07
Kazuo NojiriProvides a comprehensive, systematic guide to dry etching technologies, from basics to latest technologies.Enables beginners to understand the mechanisms of dry etching, without complexities of numeri作者: 侵蝕 時間: 2025-3-26 01:32
http://image.papertrans.cn/e/image/283255.jpg作者: CLASP 時間: 2025-3-26 07:46 作者: 和平 時間: 2025-3-26 11:59 作者: ORE 時間: 2025-3-26 16:36
Latest Dry Etching Technologies,ious issue at the 32-nm node and beyond. Furthermore, the discussion includes a review of the double-patterning technology, which is the hot topic of the moment, and three-dimensional integrated circuit (3D IC) etching for the 16-nm node and beyond.作者: 浸軟 時間: 2025-3-26 17:47
Book 2015her miniaturization and integration of semiconductor integrated circuits.?The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers an作者: 誹謗 時間: 2025-3-27 00:49
Anna Budzanowska,Tomasz Pietrzykowskivery 3 years, and logic devices and flash memory products, with 32-nm-level minimum feature sizes, were in volume production as of 2011. Some 28-nm production devices are also available as of this writing.作者: 死亡率 時間: 2025-3-27 02:09 作者: 現(xiàn)代 時間: 2025-3-27 08:12 作者: FACT 時間: 2025-3-27 13:11 作者: APNEA 時間: 2025-3-27 17:07 作者: Postulate 時間: 2025-3-27 19:38
https://doi.org/10.1007/978-3-030-36460-1ious issue at the 32-nm node and beyond. Furthermore, the discussion includes a review of the double-patterning technology, which is the hot topic of the moment, and three-dimensional integrated circuit (3D IC) etching for the 16-nm node and beyond.作者: 壓倒 時間: 2025-3-27 22:09
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