標(biāo)題: Titlebook: Distortion Analysis of Analog Integrated Circuits; Piet Wambacq,Willy Sansen Book 1998 Springer Science+Business Media New York 1998 CMOS. [打印本頁] 作者: necrosis 時(shí)間: 2025-3-21 16:31
書目名稱Distortion Analysis of Analog Integrated Circuits影響因子(影響力)
書目名稱Distortion Analysis of Analog Integrated Circuits影響因子(影響力)學(xué)科排名
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書目名稱Distortion Analysis of Analog Integrated Circuits網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Distortion Analysis of Analog Integrated Circuits被引頻次
書目名稱Distortion Analysis of Analog Integrated Circuits被引頻次學(xué)科排名
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書目名稱Distortion Analysis of Analog Integrated Circuits年度引用學(xué)科排名
書目名稱Distortion Analysis of Analog Integrated Circuits讀者反饋
書目名稱Distortion Analysis of Analog Integrated Circuits讀者反饋學(xué)科排名
作者: VALID 時(shí)間: 2025-3-21 21:03 作者: CRP743 時(shí)間: 2025-3-22 02:36
0893-3405 literature in the area of distortion analysis of electronic circuits. I am personally looking forward to hav-ing a copy readily available for reference when designing integrated circuits for communication systems.978-1-4419-5044-4978-1-4757-5003-4Series ISSN 0893-3405 作者: 改正 時(shí)間: 2025-3-22 08:01
Ilze Earner,Alexandra Telitsynas they have to modify in order to obtain the required specifications. Such valuable information can be obtained with the use of Volterra series. The price that is paid for this extra insight is that the analysis is limited to weakly nonlinear behavior only.作者: Fabric 時(shí)間: 2025-3-22 10:20
https://doi.org/10.1007/978-1-4757-5003-4CMOS; Signal; analog; analog circuit design; analog design; calculus; circuit; communication; communication 作者: Talkative 時(shí)間: 2025-3-22 13:09 作者: Talkative 時(shí)間: 2025-3-22 17:46
Description of nonlinearities in analog integrated circuits,d circuits. The devices most commonly used in silicon analog integrated circuits are transistors, resistors, capacitors and diodes. In the last few years self inductances and mutual inductances have been integrated as well [Ngu 90, Ash 96, Long 95, Long 95]. Their nonlinear behavior is not considered in this book.作者: Lumbar-Stenosis 時(shí)間: 2025-3-23 00:43 作者: Pulmonary-Veins 時(shí)間: 2025-3-23 05:01 作者: 令人不快 時(shí)間: 2025-3-23 08:19
Rashad Huseynov,Farida Abbasovad circuits. The devices most commonly used in silicon analog integrated circuits are transistors, resistors, capacitors and diodes. In the last few years self inductances and mutual inductances have been integrated as well [Ngu 90, Ash 96, Long 95, Long 95]. Their nonlinear behavior is not considered in this book.作者: JOG 時(shí)間: 2025-3-23 11:02 作者: EVEN 時(shí)間: 2025-3-23 14:27 作者: endocardium 時(shí)間: 2025-3-23 20:58 作者: 真 時(shí)間: 2025-3-23 23:19
Ilze Earner,Alexandra Telitsynasight. Therefore, less attention is paid to numerical methods such as time-domain analysis followed by a Fourier transform, which is the classical SPICE approach [Royc 89, Hspi 96], or harmonic balance methods. Such methods compute the response of a nonlinear circuit by iteration, and the final resu作者: 一罵死割除 時(shí)間: 2025-3-24 03:38
Economic Agents and the Culture of Debtn. The model that will be followed in this chapter is the Gummel-Poon model [Getr 76]. This model is used now already for several decades. More recent models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This re作者: Sad570 時(shí)間: 2025-3-24 08:15 作者: 火車車輪 時(shí)間: 2025-3-24 10:40
https://doi.org/10.1057/9781137062079sist of analog building blocks, has been studied already for some particular classes of circuits, such as time-continuous filters [Groen 94, Tsiv 93a, Tsiv 94]. A treatment of these circuits would require a thorough study of those classes of circuits, which is beyond the scope of this book. Instead,作者: 使出神 時(shí)間: 2025-3-24 15:11
Economic Agents and the Culture of Debtapter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as 作者: 人造 時(shí)間: 2025-3-24 21:08 作者: Nonconformist 時(shí)間: 2025-3-25 01:31 作者: Alveoli 時(shí)間: 2025-3-25 05:32
https://doi.org/10.1007/978-981-97-1582-4In this chapter different methods are explained for the calculation of harmonics and intermodulation products in a weakly nonlinear analog circuit.作者: nitroglycerin 時(shí)間: 2025-3-25 11:32 作者: 分散 時(shí)間: 2025-3-25 14:50
Basic terminology,For many analog integrated circuits the performance with respect to their nonlinear behavior is often expressed in terms of parameters that are measured in the frequency domain. These parameters are defined in this chapter.作者: 名次后綴 時(shí)間: 2025-3-25 18:26 作者: 監(jiān)禁 時(shí)間: 2025-3-25 21:10
Book 1998losion of interest in portable electronics such as cellular telephones, cordless telephones and other applications has served to reinforce the importance of these issues. The need now often arises to predict and optimize the distortion performance of diverse electronic circuit configurations operati作者: unstable-angina 時(shí)間: 2025-3-26 03:41
Weakly nonlinear behavior of basic analog building blocks, we will analyze some small circuits in order to provide the reader some feeling about nonlinear distortion in general. This experience can be helpful in the analysis or design of more complicated circuits such as filters.作者: sleep-spindles 時(shí)間: 2025-3-26 06:20 作者: aneurysm 時(shí)間: 2025-3-26 11:37
Economic Agents and the Culture of Debt models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].作者: 騙子 時(shí)間: 2025-3-26 14:47
Economic Agents and the Culture of Debtrs of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the use of lightly-doped drains. As a result, a modern deep submicron transistor is a more complicated structure than a transistor of older technologies.作者: BATE 時(shí)間: 2025-3-26 17:58
Silicon bipolar transistor models for distortion analysis, models such as the VBIC95 model [Mc And 95] are still based upon this model. The region of quasi-saturation [Anto 88] is not considered here. This region is especially of interest for power transistors. Distortion caused by quasi-saturation in power applications is discussed in [DeVr 96].作者: LAP 時(shí)間: 2025-3-27 00:21
MOS transistor models for distortion analysis,rs of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the use of lightly-doped drains. As a result, a modern deep submicron transistor is a more complicated structure than a transistor of older technologies.作者: 言外之意 時(shí)間: 2025-3-27 03:46 作者: 車床 時(shí)間: 2025-3-27 07:54 作者: Nebulous 時(shí)間: 2025-3-27 09:58 作者: Mets552 時(shí)間: 2025-3-27 15:55 作者: 歡騰 時(shí)間: 2025-3-27 19:07
MOS transistor models for distortion analysis,ies with effective gate lengths of 0.35. are in use in 1997. In these small devices several physical effects play a much larger role than in transistors of older technologies. Some of these effects have given rise to additional technological steps in the processing of a MOS transistor, such as the u作者: tattle 時(shí)間: 2025-3-27 23:05
Weakly nonlinear behavior of basic analog building blocks,sist of analog building blocks, has been studied already for some particular classes of circuits, such as time-continuous filters [Groen 94, Tsiv 93a, Tsiv 94]. A treatment of these circuits would require a thorough study of those classes of circuits, which is beyond the scope of this book. Instead,作者: garrulous 時(shí)間: 2025-3-28 05:32
Measurements of basic nonlinearities of transistors,apter concentrates on how higher-order derivatives of the transistor current can be measured accurately. The measurement results could be used in device parameter extraction. Only measurements on a bipolar transistor are presented in this chapter. The principles can be applied to MOS transistors as 作者: 字形刻痕 時(shí)間: 2025-3-28 07:16
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