標(biāo)題: Titlebook: Disordered Materials; Science and Technolo David Adler,Brian B. Schwartz,Marvin Silver Book 1991 Plenum Press, New York 1991 adsorption.cer [打印本頁(yè)] 作者: 生手 時(shí)間: 2025-3-21 20:05
書(shū)目名稱Disordered Materials影響因子(影響力)
作者: regale 時(shí)間: 2025-3-21 20:18 作者: prosperity 時(shí)間: 2025-3-22 02:01
https://doi.org/10.1007/978-3-642-99356-5reation of excess electron-hole carriers by either the light, or, for the electrical device, by the electric field. The reversibility of the phenomenon in this model is obtained through the large difference in crystallization rates with the light on or off.作者: 記憶 時(shí)間: 2025-3-22 04:49
https://doi.org/10.1007/978-3-642-99356-5 extrinsic localized states and the possibility of ordinary doping exists, as shown by the work of Spear and LeComber.(2) While this is an important subject, we believe that it will follow the concepts of classical crystalline tetrahedral materials.作者: 易受騙 時(shí)間: 2025-3-22 10:25
Investing in IPOs in Technology Stocksc processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important. In a discussion of the physical mechanism in a particular sample, the major parameters controlling its operation must be identified and separated out from the less significant features.作者: IDEAS 時(shí)間: 2025-3-22 13:48 作者: IDEAS 時(shí)間: 2025-3-22 21:05 作者: angina-pectoris 時(shí)間: 2025-3-23 00:56
Lone-Pair Relationships and the Origin of Excited States in Amorphous Chalcogenides extrinsic localized states and the possibility of ordinary doping exists, as shown by the work of Spear and LeComber.(2) While this is an important subject, we believe that it will follow the concepts of classical crystalline tetrahedral materials.作者: obnoxious 時(shí)間: 2025-3-23 04:12
Threshold Switching in Chalcogenide-Glass Thin Filmsc processes as well as all intermediate cases, and therefore should not prejudice the casual observer into concluding that both effects are necessarily important. In a discussion of the physical mechanism in a particular sample, the major parameters controlling its operation must be identified and separated out from the less significant features.作者: 難解 時(shí)間: 2025-3-23 08:59 作者: 阻撓 時(shí)間: 2025-3-23 10:44 作者: prodrome 時(shí)間: 2025-3-23 14:07
https://doi.org/10.1007/978-3-642-99356-5ity transformation from one state to another. Because the conductivity involves structural changes in the bulk we relate our results to those obtained from calorimetric (2) and structural investigation (3) on the same materials. We also present measurements on the electrical characteristics of memory switches.作者: Lobotomy 時(shí)間: 2025-3-23 20:10 作者: 束以馬具 時(shí)間: 2025-3-23 23:22 作者: 慎重 時(shí)間: 2025-3-24 04:08
https://doi.org/10.1007/978-3-658-41667-6pecially attractive in this regard because they are basically much less expensive than their crystalline counterparts and because they possess a direct band gap with a high value for the optical absorption coefficient. We report here the development of a new alloy that eliminates the physical problems associated with the silicon-hydrogen alloys.作者: DALLY 時(shí)間: 2025-3-24 10:02
https://doi.org/10.1007/978-3-642-99356-5back to a high resistance state through application of a current pulse with a rapid turn off. This paper reports initial results of studies designed to elucidate structural aspects of the phase transition in these materials.作者: voluble 時(shí)間: 2025-3-24 11:05 作者: 頌揚(yáng)本人 時(shí)間: 2025-3-24 18:14 作者: Licentious 時(shí)間: 2025-3-24 22:57 作者: Melanoma 時(shí)間: 2025-3-25 02:52
Structural Studies of Amorphous Semiconductorsback to a high resistance state through application of a current pulse with a rapid turn off. This paper reports initial results of studies designed to elucidate structural aspects of the phase transition in these materials.作者: 狂怒 時(shí)間: 2025-3-25 05:07 作者: 酷熱 時(shí)間: 2025-3-25 08:01
Local Structure, Bonding, and Electronic Properties of Covalent Amorphous Semiconductorscovered and characterized, an inordinately large effort was expended into understanding the properties of those amorphous materials with simple crystalline analogues. It is the purpose of this paper to emphasize the new modes of behavior when the constraints imposed by long-range periodicity are removed.作者: 偽書(shū) 時(shí)間: 2025-3-25 14:20
Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:Hotostructural changes. In order to gain further information about the electronic and vibrational states of this amorphous semiconductor, we have investigated the electrolyte electroreflectance (EER) and Raman spectra of several samples of this material.作者: 神圣在玷污 時(shí)間: 2025-3-25 16:43 作者: 欺騙世家 時(shí)間: 2025-3-25 23:17
Reflectivity Studies of the Te(Ge,As)-Based Amorphous Semiconductor in the Conducting and Insulatingrned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal and amorphous forms and, in particular, the differences in optical properties.作者: arthroplasty 時(shí)間: 2025-3-26 04:13
Three Dimensional Model of Structure and Electronic Properties of Chalcogenide Glassesorbital overlaps and bonding configurations of the lone pair electrons associated with the group VI chalcogen atoms which do not occur in crystals. We present the ‘ball and spoke’ models we have built to test out the concepts of lone pair relationships discussed earlier (Ovshinsky 1972, Ovshinsky 1973, Ovshinsky and Fritzsche 1973).作者: Cytokines 時(shí)間: 2025-3-26 05:02
A New Amorphous Silicon-Based Alloy for Electronic Applicationspecially attractive in this regard because they are basically much less expensive than their crystalline counterparts and because they possess a direct band gap with a high value for the optical absorption coefficient. We report here the development of a new alloy that eliminates the physical problems associated with the silicon-hydrogen alloys.作者: 尖酸一點(diǎn) 時(shí)間: 2025-3-26 09:21 作者: extinct 時(shí)間: 2025-3-26 14:57 作者: 委派 時(shí)間: 2025-3-26 18:56 作者: 奇思怪想 時(shí)間: 2025-3-26 21:49 作者: intercede 時(shí)間: 2025-3-27 01:33
https://doi.org/10.1007/978-3-642-99356-5d as low-mobility electronic intrinsic semiconductors with a temperature-activated electrical conductivity . = ..×exp(-Δ.) which sometimes extends well into the molten state.. They remain intrinsic with changed Δ. when their composition is changed.. These alloys transmit infrared light up to an expo作者: BANAL 時(shí)間: 2025-3-27 07:38
https://doi.org/10.1007/978-3-642-99356-5ing variation in order and conductivity have been made the basis of memory devices.(1) In this paper, we present our observations on induced conductivity transformation from one state to another. Because the conductivity involves structural changes in the bulk we relate our results to those obtained作者: 發(fā)牢騷 時(shí)間: 2025-3-27 12:28 作者: amygdala 時(shí)間: 2025-3-27 16:24
https://doi.org/10.1007/978-3-642-99356-5 and Te, which can be formed in both the amorphous and crystalline form.). In the final day of this meeting we would like to tie the basic physics learned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal作者: maroon 時(shí)間: 2025-3-27 18:23 作者: 獨(dú)白 時(shí)間: 2025-3-28 00:08
https://doi.org/10.1007/978-3-642-99356-5ing short pulses of laser light and evidenced by a sharp change in optical transmission and reflection. This optical switching behavior is analogous to the memory-type electrical switching effect in these materials which has received wide attention. since the observation by S. R. Ovshinsky. of both 作者: laxative 時(shí)間: 2025-3-28 03:20 作者: 臭名昭著 時(shí)間: 2025-3-28 10:04
https://doi.org/10.1007/978-3-642-99356-5efinitively established as electronic processes,., there is one major remaining problem—the nature of the localized states in the gap of these materials. In this Comment I address this subject, with emphasis on their role in the switching transition.作者: IRS 時(shí)間: 2025-3-28 11:03 作者: Induction 時(shí)間: 2025-3-28 17:26
https://doi.org/10.1007/978-3-642-99356-5conductivity by many orders of magnitude. Such doping is the basis of the crystalline semiconducting industry and has recently been extended to amorphous silicon and germanium, with hydrogen appearing to play an important compensating role.(1–3)作者: Anticonvulsants 時(shí)間: 2025-3-28 22:06 作者: 得體 時(shí)間: 2025-3-29 02:01 作者: Mingle 時(shí)間: 2025-3-29 05:28
https://doi.org/10.1007/978-3-658-41667-6erations in single-crystal materials, and for physical reasons such as grain boundaries in poly-crystalline materials. Amorphous semiconductors are especially attractive in this regard because they are basically much less expensive than their crystalline counterparts and because they possess a direc作者: deviate 時(shí)間: 2025-3-29 08:16 作者: 包裹 時(shí)間: 2025-3-29 13:09
https://doi.org/10.1007/978-94-6209-161-0hous tetrahedral semiconductors ordinarily possess a very large density of states which act as traps leading to low values for drift mobility and low recombination lifetimes of free carriers. However, Spear and his group (8–10) reported that a-Si decomposed from SiH. gas by r.f. glow discharge and d作者: Jocose 時(shí)間: 2025-3-29 19:27
Raoul Klingner,Tobias Zimmermannts. It is multi-elemental and includes hydrogen and can also include other elements such as oxygen without deleterious effects. This Si: F: H alloy, prepared by the glow-discharge decomposition of SiF. mixed with hydrogen, has been reported to overcome a number of problems of . and .: H. The .: F: H作者: 設(shè)想 時(shí)間: 2025-3-29 20:40 作者: 注射器 時(shí)間: 2025-3-30 02:16 作者: 連鎖 時(shí)間: 2025-3-30 06:30 作者: FUSE 時(shí)間: 2025-3-30 09:09
Localized States in the Gap of Amorphous Semiconductorsefinitively established as electronic processes,., there is one major remaining problem—the nature of the localized states in the gap of these materials. In this Comment I address this subject, with emphasis on their role in the switching transition.作者: Mere僅僅 時(shí)間: 2025-3-30 15:31 作者: Pandemic 時(shí)間: 2025-3-30 19:42
https://doi.org/10.1007/978-1-4684-8745-9adsorption; ceramics; chemistry; crystal; crystallization; development; diffusion; glass; laser; photography; 作者: 奇怪 時(shí)間: 2025-3-30 22:46
Plenum Press, New York 1991作者: 拉開(kāi)這車床 時(shí)間: 2025-3-31 02:08
https://doi.org/10.1007/978-3-642-99356-5 importance of developments such as the transistor, the laser, or electrophotography until well after their successful demonstration. So-called experts, in fact, tend to resist new inventions, a natural instinct based on a combination of fear of obsolescent expertise and jealousy arising from lack of active participation in the discovery.作者: 一個(gè)姐姐 時(shí)間: 2025-3-31 07:24 作者: Ambiguous 時(shí)間: 2025-3-31 10:33 作者: 爭(zhēng)吵加 時(shí)間: 2025-3-31 14:13 作者: fender 時(shí)間: 2025-3-31 20:15
https://doi.org/10.1007/978-3-642-99356-5conductivity by many orders of magnitude. Such doping is the basis of the crystalline semiconducting industry and has recently been extended to amorphous silicon and germanium, with hydrogen appearing to play an important compensating role.(1–3)作者: COKE 時(shí)間: 2025-3-31 21:59
Book 1991from lack of active participation in the ties throughout the world. Inevitably, there was discovery. the usual amount of controversy, with many experts Denigration of new ideas is a relatively simultaneously taking positions (2) and (3) above. safe modus operandi, since the vast majority It has now 作者: OTHER 時(shí)間: 2025-4-1 02:19 作者: 不可磨滅 時(shí)間: 2025-4-1 08:29
Introduction importance of developments such as the transistor, the laser, or electrophotography until well after their successful demonstration. So-called experts, in fact, tend to resist new inventions, a natural instinct based on a combination of fear of obsolescent expertise and jealousy arising from lack o作者: GORGE 時(shí)間: 2025-4-1 12:46
Reversible Electrical Switching Phenomena in Disordered Structuresved in various types of disordered materials, particularly amorphous semiconductors. covering a wide range of compositions. These include oxide- and boron-based glasses and materials which contain the elements tellurium and/or arsenic combined with other elements such as those of groups III, IV, and作者: 宮殿般 時(shí)間: 2025-4-1 14:18 作者: colony 時(shí)間: 2025-4-1 20:32
Reversible Conductivity Transformations in Chalcogenide Alloy Filmsing variation in order and conductivity have been made the basis of memory devices.(1) In this paper, we present our observations on induced conductivity transformation from one state to another. Because the conductivity involves structural changes in the bulk we relate our results to those obtained作者: 帳單 時(shí)間: 2025-4-2 00:40 作者: 我不怕?tīng)奚?nbsp; 時(shí)間: 2025-4-2 04:41
Reflectivity Studies of the Te(Ge,As)-Based Amorphous Semiconductor in the Conducting and Insulating and Te, which can be formed in both the amorphous and crystalline form.). In the final day of this meeting we would like to tie the basic physics learned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal作者: Fermentation 時(shí)間: 2025-4-2 10:58
Analog Models for Information Storage and Transmission in Physiological Systemsse ratio. How can such information be retained as memory and in what forms can it be detected and used? These are great unsolved problems of biology and their solution would also be of real value in electronic technology.
