標(biāo)題: Titlebook: Disorder and Order in the Solid State; Concepts and Devices Roger W. Pryor,Brian B. Schwartz,Stanford R. Ovshi Book 1988 Springer Science+B [打印本頁] 作者: 要旨 時間: 2025-3-21 16:34
書目名稱Disorder and Order in the Solid State影響因子(影響力)
書目名稱Disorder and Order in the Solid State影響因子(影響力)學(xué)科排名
書目名稱Disorder and Order in the Solid State網(wǎng)絡(luò)公開度
書目名稱Disorder and Order in the Solid State網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Disorder and Order in the Solid State被引頻次
書目名稱Disorder and Order in the Solid State被引頻次學(xué)科排名
書目名稱Disorder and Order in the Solid State年度引用
書目名稱Disorder and Order in the Solid State年度引用學(xué)科排名
書目名稱Disorder and Order in the Solid State讀者反饋
書目名稱Disorder and Order in the Solid State讀者反饋學(xué)科排名
作者: 使尷尬 時間: 2025-3-21 22:39
Recent Developments in Ovonic Threshold Switching Device Technologyterning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni作者: 愉快嗎 時間: 2025-3-22 02:46 作者: BLAZE 時間: 2025-3-22 08:11
,Zeichnen für Fortgeschrittene,terning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni作者: PLUMP 時間: 2025-3-22 12:21 作者: Disk199 時間: 2025-3-22 15:50
Book 1988h broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu作者: Disk199 時間: 2025-3-22 18:25
Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu978-1-4612-8299-0978-1-4613-1027-3作者: febrile 時間: 2025-3-22 23:40
Book 1988y held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has m作者: FLACK 時間: 2025-3-23 03:04
Switching and Memory Effects in Thin Amorphous Chalcogenide Films — Thermophonic Studiesurther, the results concur with a model where the sample heats during the delay time; the heating causes the fields to rearrange and a critical value is reached near an electrode, whereby a carrier generation process is encouraged.作者: FAST 時間: 2025-3-23 07:38
On the Impedance Calculation of Thick MIM Barriers of the (M.-I-M.) barrier leading directly to an incremental equivalent circuit representation is given. It is found that the device may be modeled satisfactorily in the low frequency range for all bias conditions by a resistor connected in parallel with a capacitor.作者: facetious 時間: 2025-3-23 11:53 作者: Malaise 時間: 2025-3-23 14:09 作者: 舊石器 時間: 2025-3-23 19:37
Introductionr Contacts” has long been considered the definitive document in that field. The papers in this collection only partially reflect the extent of the total scientific contribution that he, his students and his associates have made. These papers are presented as a brief summary of the current activities of a great scientist and his associates.作者: hidebound 時間: 2025-3-24 02:03 作者: 破裂 時間: 2025-3-24 05:59
Metastable Nonlinear Conductance Phenomena in Amorphous Semiconductor Multilayerss well as of .-Si:H/.-SiN.:. multilayers are considered. The npnp multilayers can be brought into different metastable states by cooling from an equilibration temperature .>.. with ..=130°. while a bias is applied. These metastable states exhibit greatly different nonlinear current-voltage characteristics.作者: DIS 時間: 2025-3-24 06:58
Dielectric Behaviour of Amorphous Thin Filmsic behaviour of thin ionic films is examined using a cluster model. Anharmonicity in the vibrations of particles in the tissue region of the films is considered to be the possible origin of the dielectric behaviour.作者: 悠然 時間: 2025-3-24 14:41 作者: larder 時間: 2025-3-24 18:52 作者: cathartic 時間: 2025-3-24 21:38
Internationale Atomgewitche für 1917e ceramic superconductors. We discuss the effect of fluorination on raising the superconducting transition temperature to T.=155K or higher, on eliminating oxygen diffusion and on orienting the crystallites in the YBaCuO superconductors.作者: Obituary 時間: 2025-3-25 00:16
https://doi.org/10.1007/978-3-642-99399-2en a considerable amount of experimental and theoretical investigation of these domains and their associated walls in ferromagnetic materials but the corresponding properties for other types of magnetic systems have not received such detailed consideration.作者: Eeg332 時間: 2025-3-25 05:05
https://doi.org/10.1007/978-3-642-99399-2 analysis has found it nitrogen deficient. Its refractive index by ellipsometry is 1.85-to-l.87, while the refractive index of bulk Si3N4 is 2.00. The very low deposition temperature, which is probably responsible for the incomplete chemical reaction of Si and N2.作者: jumble 時間: 2025-3-25 10:43 作者: FILLY 時間: 2025-3-25 15:20
Silicon Nitride Films Formed with DC-Magnetron Reactive Sputtering analysis has found it nitrogen deficient. Its refractive index by ellipsometry is 1.85-to-l.87, while the refractive index of bulk Si3N4 is 2.00. The very low deposition temperature, which is probably responsible for the incomplete chemical reaction of Si and N2.作者: 的闡明 時間: 2025-3-25 18:41
Optical Fibers For Infrared From Vitreous Ge-Sn-Seglasses can be used in the near infrared region [6], while chalcogenide glasses are the most promising materials for a wider range of wavelength, near and mid-infrared [7–10]. Although much research on chalcogenide glasses has been done, only limited results are available concerning fiber fabrication and their characteristics [10–14].作者: deadlock 時間: 2025-3-25 23:24
th birthday held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices作者: 多節(jié) 時間: 2025-3-26 04:00
,Zeichnen für Fortgeschrittene,r Contacts” has long been considered the definitive document in that field. The papers in this collection only partially reflect the extent of the total scientific contribution that he, his students and his associates have made. These papers are presented as a brief summary of the current activities of a great scientist and his associates.作者: FIG 時間: 2025-3-26 05:59
,Freih?ndige Fertigungszeichnungen,urnal, “The Histoiy of Photography” but above all for his experimental work on the Ovonic threshold switch, which I followed with close interest while trying to make a theory of what was happening in this device (Mott 1969, 1971, 1975).作者: 陶醉 時間: 2025-3-26 10:51 作者: 的是兄弟 時間: 2025-3-26 15:47
Schuchardt & Schütte Aktiengesellschaftic behaviour of thin ionic films is examined using a cluster model. Anharmonicity in the vibrations of particles in the tissue region of the films is considered to be the possible origin of the dielectric behaviour.作者: 劇本 時間: 2025-3-26 17:29
Amorphous Chalcogenide Microwave Switchesitches viz, variation of attenuation with driving current and frequency response are described. These switches are much simpler than conventional p-i-n diodes and have the advantage of displaying memory type behavior. Their characteristics also throw light on the electrical properties of chalcogenides at high frequencies.作者: ellagic-acid 時間: 2025-3-26 22:49
Piezoresistivity in Semiconducting Ferroelectricslastic and thermal boundary conditions will be reviewed. An account of this phenomenon based upon recent models of ferroelectricity and grain boundary potential is given. A comparison to silicon and germanium is attempted.作者: VEN 時間: 2025-3-27 02:58
,Zeichnen für Fortgeschrittene,The paper deals with the consequences of a steady state minority carrier injection through a metal or a high-low junction into the bulk of a semiconductor. Depending on the nature of the semiconductor, the spatial distribution of the net recombination rate of injected minority carriers R occurs in two different ways:作者: SNEER 時間: 2025-3-27 07:14 作者: 青少年 時間: 2025-3-27 10:49 作者: Synovial-Fluid 時間: 2025-3-27 17:39 作者: Femish 時間: 2025-3-27 19:05 作者: 滑動 時間: 2025-3-28 01:50 作者: 可觸知 時間: 2025-3-28 04:20
Proper Capacitance Modeling for Devices with Distributed Space ChargeThe present paper derives from our previous work (1–3) on modeling the time dependence of ovonic threshold switches (OTS), and DIACS (4). It is also related to our analysis (5–8) of one carrier, space-charge controlled conduction in metal-insulator metal (MIM) structures.作者: Nomadic 時間: 2025-3-28 06:37 作者: Fracture 時間: 2025-3-28 10:48
Institute for Amorphous Studies Serieshttp://image.papertrans.cn/e/image/281461.jpg作者: 攤位 時間: 2025-3-28 16:19 作者: 華而不實 時間: 2025-3-28 20:36
https://doi.org/10.1007/978-3-642-99399-2lastic and thermal boundary conditions will be reviewed. An account of this phenomenon based upon recent models of ferroelectricity and grain boundary potential is given. A comparison to silicon and germanium is attempted.作者: 泰然自若 時間: 2025-3-29 01:19 作者: 易于出錯 時間: 2025-3-29 03:38 作者: KIN 時間: 2025-3-29 10:45 作者: 合法 時間: 2025-3-29 14:43
,Zeichnen für Fortgeschrittene,in these devices were originally made for AC application and then adapted for DC operation by material changes such as the addition of selenium to the tellurium-based, stable chalcogenide materials. Threshold switches were successfully made in thin film form for experimental purposes..In order to ma作者: 感情 時間: 2025-3-29 17:54
Perspektivische Fertigungszeichnungen,itches viz, variation of attenuation with driving current and frequency response are described. These switches are much simpler than conventional p-i-n diodes and have the advantage of displaying memory type behavior. Their characteristics also throw light on the electrical properties of chalcogenid作者: GROG 時間: 2025-3-29 23:31 作者: 運動吧 時間: 2025-3-30 00:51 作者: CLOWN 時間: 2025-3-30 07:33
,Erratum to: Ma?e und Ma?systeme,oach resulting in the formulation of a set of two coupled ordinary differential equations in terms of the real and imaginary parts of the complex a.c. carrier density function is explained in detail. As an alternative and more practical method, the calculation of the driving-point impedance function作者: 擺動 時間: 2025-3-30 09:47 作者: 業(yè)余愛好者 時間: 2025-3-30 13:27 作者: sterilization 時間: 2025-3-30 17:33 作者: seroma 時間: 2025-3-30 23:22 作者: insolence 時間: 2025-3-31 04:51
https://doi.org/10.1007/978-3-642-99399-2 vacuum plant model BAS450PM, equipped with cryopump and dc-magnetron has been adapted for this task. In order of importance the significant features of this process are:.This film exhibits excellent mechanical strength, high corrosion resistance, low electrical leakage and high dielectric breakdown作者: 真實的你 時間: 2025-3-31 05:30 作者: CLASP 時間: 2025-3-31 11:22 作者: Goblet-Cells 時間: 2025-3-31 16:44 作者: Atheroma 時間: 2025-3-31 18:26 作者: boisterous 時間: 2025-3-31 22:28 作者: Forage飼料 時間: 2025-4-1 02:35
Metastable Nonlinear Conductance Phenomena in Amorphous Semiconductor Multilayersctance anomalies in heterogeneous semiconductors. Electronic transport parallel and perpendicular to the layers of npnp doping-modulated multilayers as well as of .-Si:H/.-SiN.:. multilayers are considered. The npnp multilayers can be brought into different metastable states by cooling from an equil作者: vibrant 時間: 2025-4-1 09:05
