標題: Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ay?e Erol (Faculty of Science) Book 2008 Springer-Verlag Ber [打印本頁] 作者: 珍愛 時間: 2025-3-21 19:24
書目名稱Dilute III-V Nitride Semiconductors and Material Systems影響因子(影響力)
書目名稱Dilute III-V Nitride Semiconductors and Material Systems影響因子(影響力)學(xué)科排名
書目名稱Dilute III-V Nitride Semiconductors and Material Systems網(wǎng)絡(luò)公開度
書目名稱Dilute III-V Nitride Semiconductors and Material Systems網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Dilute III-V Nitride Semiconductors and Material Systems被引頻次
書目名稱Dilute III-V Nitride Semiconductors and Material Systems被引頻次學(xué)科排名
書目名稱Dilute III-V Nitride Semiconductors and Material Systems年度引用
書目名稱Dilute III-V Nitride Semiconductors and Material Systems年度引用學(xué)科排名
書目名稱Dilute III-V Nitride Semiconductors and Material Systems讀者反饋
書目名稱Dilute III-V Nitride Semiconductors and Material Systems讀者反饋學(xué)科排名
作者: plasma 時間: 2025-3-21 23:53
Springer Series in Materials Sciencehttp://image.papertrans.cn/e/image/280453.jpg作者: frivolous 時間: 2025-3-22 02:43
https://doi.org/10.1007/978-3-540-74529-7Modulator; development; dynamics; electronic properties; electronic structure; electronics; laser; nanostru作者: dominant 時間: 2025-3-22 04:39 作者: podiatrist 時間: 2025-3-22 11:04
Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers,such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.作者: Sedative 時間: 2025-3-22 13:43
Karin Weiss,Katrin Isermann,Janette Brauerre we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III?N.?V. alloys including GaN.As., InN.P.作者: Sedative 時間: 2025-3-22 17:14 作者: 加劇 時間: 2025-3-23 00:07
Sozialisation zur Mitbürgerlichkeittronegativity or low ionization energy can be explained by the band anticrossing model. Interaction between the localized levels introduced by a highly electronegative impurity, such as N in GaN.As., and the delocalized states of the host semiconductor causes a restructuring of the conduction band i作者: 不能妥協(xié) 時間: 2025-3-23 02:46
Wieviel Autonomie besitzen Kinder?ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio作者: 我還要背著他 時間: 2025-3-23 08:42
Sozialismus im 20. Jahrhundert,vior of conduction band effective mass as a function of Fermi energy, nitrogen content, and pressure. From analysis of the effective mass for different electron concentrations we have determined the energy dispersion relation for conduction band. We have investigated also optical absorption spectra 作者: RAGE 時間: 2025-3-23 12:20 作者: BET 時間: 2025-3-23 16:03
Jiadong Zheng,Patricia Peill-Schoellerrange of electronic and optoelectronic applications. However, the addition of nitrogen also has a large impact on the carrier dynamics, often resulting in a considerable increase in shallow traps, which readily capture excitons. A number of mechanisms have been proposed to explain the creation of sh作者: Felicitous 時間: 2025-3-23 21:48 作者: 厚顏 時間: 2025-3-24 00:22 作者: HEED 時間: 2025-3-24 06:10
Patricia Peill-Schoeller,Pengcheng Li scattering from nitrogen sites and clusters, the conduction band becomes highly non-parabolic, which further affects the transport properties. The effect of this non-parabolicity on the mobility can be dealt with using an extension to the ladder method for solving Boltzmann‘s transport equation. Th作者: CLEFT 時間: 2025-3-24 08:00 作者: 厭食癥 時間: 2025-3-24 14:37 作者: 反感 時間: 2025-3-24 16:03 作者: Visual-Acuity 時間: 2025-3-24 20:51
Sozialkapital und Transaktions-Controllingn multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-relate作者: ANTI 時間: 2025-3-25 01:25
Sandro Bliemetsrieder,Susanne Dungsemiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by d作者: 藐視 時間: 2025-3-25 04:05
https://doi.org/10.1007/978-3-531-92773-2such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.作者: filicide 時間: 2025-3-25 08:48 作者: Nutrient 時間: 2025-3-25 14:26 作者: 山頂可休息 時間: 2025-3-25 18:47 作者: Perineum 時間: 2025-3-25 20:07 作者: Triglyceride 時間: 2025-3-26 02:36
Wieviel Autonomie besitzen Kinder?n with the lowest conduction bands induce a pronounced nonparabolicity of this band and affect strongly the value of the effective electron mass and its pressure and composition dependences. The origin of the additional . . optical transition is elucidated.作者: Adornment 時間: 2025-3-26 07:28
Patricia Peill-Schoeller,Pengcheng Lie ladder method was developed to deal realistically with the highly inelastic nature of polar-optical phonon scattering, which limits the high temperature mobility in most III–V semiconductors. Here, we detail this extension and discuss the theoretical models of electron scattering from nitrogen centres.作者: Oration 時間: 2025-3-26 10:37 作者: GORGE 時間: 2025-3-26 16:04 作者: 過多 時間: 2025-3-26 19:54
Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the eering since the bandgap discontinuity, strains, and the bandgap energy in this system can be controlled more independently than in ternary or quaternary quantum wells. Moreover, N-related increase in the electron effective mass is discussed in this work.作者: Integrate 時間: 2025-3-26 23:56 作者: 鍵琴 時間: 2025-3-27 04:02 作者: CRUE 時間: 2025-3-27 08:22
https://doi.org/10.1007/978-3-322-86231-0s. In this chapter we will review our present knowledge on the basic electronic and also material-related properties of GaInNP alloys. Issues to be addressed include: modeling of electronic structure of GaInNP, effects of nitrogen on band alignment at the GaInNP/GaAs interface, origin of radiative recombination in the alloys.作者: Range-Of-Motion 時間: 2025-3-27 13:28 作者: frenzy 時間: 2025-3-27 16:00
,Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III–As–N Alloys, tetrahedral N.Ga. to a preferred N.InGa. and/or N.In.Ga. configuration. Theoretical results of impurity modes presented for dilute In(Al)AsN and high-In(Ga) content GaInNAs (GaAlNAs) alloys are compared and discussed with the existing infrared absorption and Raman scattering data.作者: Desert 時間: 2025-3-27 20:58
Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs,s. In this chapter we will review our present knowledge on the basic electronic and also material-related properties of GaInNP alloys. Issues to be addressed include: modeling of electronic structure of GaInNP, effects of nitrogen on band alignment at the GaInNP/GaAs interface, origin of radiative recombination in the alloys.作者: interior 時間: 2025-3-27 22:30 作者: 忍耐 時間: 2025-3-28 02:56 作者: 熱心 時間: 2025-3-28 08:09 作者: 廚房里面 時間: 2025-3-28 11:29
Spin Dynamics in Dilute Nitride,tride structures is governed by a spin-dependent recombination process of free conduction electrons on deep paramagnetic centres. A non-linear theory of the spin dynamics in the coupled system of spin-polarised free and localised carriers is presented.作者: 先兆 時間: 2025-3-28 18:34 作者: Jejune 時間: 2025-3-28 22:02
Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,re we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III?N.?V. alloys including GaN.As., InN.P.作者: 神圣將軍 時間: 2025-3-28 23:38
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (d optical properties is presented. The growth on two different substrate orientations, GaAs (100) and (111)B has been studied. The quantum well optical emission was found to be strongly increased when the nitrogen ion density was reduced during the growth, as determined by photoluminescence experime作者: 胰島素 時間: 2025-3-29 06:52 作者: 顯赫的人 時間: 2025-3-29 10:23
,Electronic Structure of GaNxAs1?x Under Pressure,ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio作者: euphoria 時間: 2025-3-29 12:12 作者: 打擊 時間: 2025-3-29 19:20 作者: NEX 時間: 2025-3-29 22:47
The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides,range of electronic and optoelectronic applications. However, the addition of nitrogen also has a large impact on the carrier dynamics, often resulting in a considerable increase in shallow traps, which readily capture excitons. A number of mechanisms have been proposed to explain the creation of sh作者: 整潔 時間: 2025-3-30 02:40
Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells,rature in this feature. For this, we have analyzed GaInNAs quantum well samples grown at different temperatures in the range 360–460°C by transmission electron microscopy in diffraction contrast mode. Our results show a variation of the contrast as bright and dark regions along the quantum well, rel作者: 為寵愛 時間: 2025-3-30 04:48 作者: 殺子女者 時間: 2025-3-30 12:00
The Hall Mobility in Dilute Nitrides, scattering from nitrogen sites and clusters, the conduction band becomes highly non-parabolic, which further affects the transport properties. The effect of this non-parabolicity on the mobility can be dealt with using an extension to the ladder method for solving Boltzmann‘s transport equation. Th作者: 凝結(jié)劑 時間: 2025-3-30 12:54 作者: 兩種語言 時間: 2025-3-30 20:00 作者: 我悲傷 時間: 2025-3-31 00:42 作者: Promotion 時間: 2025-3-31 03:45
Doping, Electrical Properties and Solar Cell Application of GaInNAs,n multijunction solar cells. Minority carrier devices are sensitive to carrier localization and trapping. Hence, in a complex material system like GaInNAs results of transport, optical and structural properties should be interpreted together to obtain a picture of the intrinsic and the growth-relate作者: CROW 時間: 2025-3-31 05:23
Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Disloemiconductor field effect transistors were merged in a single chip. Structural defect-free GaPN and InGaPN layers were grown on a Si substrate. Point defects in these layers were reduced by reducing N ions and rapid thermal annealing. The carrier concentrations of the GaPN layer were controlled by d作者: GRACE 時間: 2025-3-31 11:53 作者: OVERT 時間: 2025-3-31 14:54 作者: 完成 時間: 2025-3-31 20:54 作者: arousal 時間: 2025-4-1 01:43 作者: 凹處 時間: 2025-4-1 02:24
Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (growth. Atomic force microscopy (AFM) measurements in similar epilayers showed that ions cause an important structural disorder of the layers, showing approximately twice the root mean square (RMS) roughness when the density of ions is not reduced by external magnetic fields. Additionally, transmiss作者: Wernickes-area 時間: 2025-4-1 10:00 作者: 織物 時間: 2025-4-1 14:00
Experimental Studies of GaInNAs Conduction Band Structure,r the conduction and valence bands in GaInNAs alloys. Experiments have shown profound changes of the GaInNAs conduction band close to the Г point, conduction band splitting, and giant conduction band nonparabolicity. Much less effect have been observed for X and L minima as well as for valence band
