標(biāo)題: Titlebook: Digital Memory and Storage; Walter E. Proebster Book 1978 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig 1978 Access.Computer [打印本頁] 作者: 與生 時間: 2025-3-21 17:45
書目名稱Digital Memory and Storage影響因子(影響力)
書目名稱Digital Memory and Storage影響因子(影響力)學(xué)科排名
書目名稱Digital Memory and Storage網(wǎng)絡(luò)公開度
書目名稱Digital Memory and Storage網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Digital Memory and Storage被引頻次
書目名稱Digital Memory and Storage被引頻次學(xué)科排名
書目名稱Digital Memory and Storage年度引用
書目名稱Digital Memory and Storage年度引用學(xué)科排名
書目名稱Digital Memory and Storage讀者反饋
書目名稱Digital Memory and Storage讀者反饋學(xué)科排名
作者: Contend 時間: 2025-3-21 21:38
Electromechanical Mass Storage Units — Disk Filesl large-capacity computing systems as well as to process control computers and intelligent terminals. The so-called working or main storage units which are worked on directly by the processor are, in spite of their substantial growth in the past years, in no way capable of accepting all necessary da作者: hemoglobin 時間: 2025-3-22 01:46 作者: ZEST 時間: 2025-3-22 05:50
Fabrication Technology and Physical Fundamentals of Components Used for Semiconductor Memories replace the latter so far. They received a particular stimulus in the wake of microprocessor systems which attracted considerable interest during the last few years. Microcomputers are a main application field for the most important types of semiconductor memories as shown in Table 1. Fundamentally作者: BLAZE 時間: 2025-3-22 11:50 作者: Carcinogen 時間: 2025-3-22 14:49
A High Performance Low Power 2048-Bit Memory Chip in MOSFET Technology and Its Applicationrge monolithic memories in MOSFET technology for the main stores and for control stores. These memories have proven their feasibility and reliability in several thousand systems during the last three years.作者: Carcinogen 時間: 2025-3-22 21:03 作者: reflection 時間: 2025-3-22 21:25 作者: 漸變 時間: 2025-3-23 04:12
Structure, Organization and Applications of CCD Memoriesge of speeds for a number of years now. They have nearly completely taken the place of magnetic core memories. The availability of devices with ever larger storage capacities brings us correspondingly nearer to the long-discussed goal of also employing semiconductor memories in those applications wh作者: 通情達(dá)理 時間: 2025-3-23 09:17
Read-Only Memories with Magnetic Components or with Integrated Semiconductor Circuitsf applications. With regard to their function, they take a position midway between the electronic read-write memories and digital logic circuits as well as switching networks. They have a common form of organization as RAMs and a similar circuit configuration, evident for instance from the designati作者: 反復(fù)拉緊 時間: 2025-3-23 10:41
Electrically Alterable MOS-ROMs, with Particular Emphasis on the Floating Gate Typeer one drawback of the customary read-write semiconductor memories with random access (RAMs), namely the volatility of the stored information: The stored information may be lost in case of disconnection or unintended interruption of the supply voltages, even if the dropout lasts only a few milliseco作者: extinct 時間: 2025-3-23 16:00
Physical Principles of Magnetic Bubble Domain Memory Devicesization is perpendicular to the plane of the plate (Fig. 1). The magnetic bubble is separated from its environment by the cylindrical magnetic domain wall. The magnetization in the domain wall rotates through 180 degrees. In a bubble domain memory the presence of a magnetic bubble at a particular pl作者: Myosin 時間: 2025-3-23 22:05 作者: 間諜活動 時間: 2025-3-24 00:02
Ferromagnetic Domain Memoriesy known. A review presented by the author describes the state of technology up to 1976 [1]. The present contribution will deal with the progress that has been achieved in the meantime. Today, ferromagnetic domain memories are poised on the threshold of many practical applications, and they must be c作者: 種族被根除 時間: 2025-3-24 04:17 作者: Ordeal 時間: 2025-3-24 08:40
Materials for Optical Data Storesperties of coherent light often masked the difficulties with the introduction of optical storage techniques. By these means, systems were proposed superior to existing stores by orders of magnitude but with the disadvantage of non-feasibility. It had been overlooked that the limits of optical method作者: 記憶 時間: 2025-3-24 12:41 作者: onlooker 時間: 2025-3-24 17:59 作者: Cleave 時間: 2025-3-24 22:46
Romantic Love in Cultural ContextsBEAMOS — Beam Accessable MOS — is the best known synonym for recent developments in the field of electronic beam memories.作者: EWE 時間: 2025-3-25 00:12
On the Development of Digital MemoriesIn this talk on the history of the evolution of digital memories I will make a very subjective selection. I will emphasize those memories whose inventors I have become acquainted with personally, and those developments in which I have been involved myself.作者: 有花 時間: 2025-3-25 03:24 作者: Atheroma 時間: 2025-3-25 11:31
BEAMOS — Technology and ApplicationsBEAMOS — Beam Accessable MOS — is the best known synonym for recent developments in the field of electronic beam memories.作者: circumvent 時間: 2025-3-25 15:01
https://doi.org/10.1007/978-3-322-83629-8Access; Computer; Datenbank; Datenbanksysteme; Komplexit?t; Leistung; Zuverl?ssigkeit; storage作者: indecipherable 時間: 2025-3-25 16:46
978-3-528-08409-7Friedr. Vieweg & Sohn Verlagsgesellschaft mbH, Braunschweig 1978作者: patella 時間: 2025-3-25 20:52
https://doi.org/10.1007/978-3-7091-1379-0ransition of the magnetization in the medium. This element of digital data storage induces in the read head a voltage pulse in the form of a delta function, the integral of which is the initially introduced step function. The technical implementation of heads and recording media as well as the write作者: hermitage 時間: 2025-3-26 03:22
https://doi.org/10.1007/978-3-7091-1379-0l large-capacity computing systems as well as to process control computers and intelligent terminals. The so-called working or main storage units which are worked on directly by the processor are, in spite of their substantial growth in the past years, in no way capable of accepting all necessary da作者: flaggy 時間: 2025-3-26 07:58
Coda: Nature Poets and Fiat Moneyype of application. Cost considerations generally lead to magnetic tapes being used as data storage devices in preference to magnetic disks, even when their use prevents application of direct data access methods. Analysing the system aspect of a tape-oriented application, it is tempting to conceive 作者: Magnitude 時間: 2025-3-26 10:17 作者: Irremediable 時間: 2025-3-26 15:25 作者: 烤架 時間: 2025-3-26 19:12 作者: 殖民地 時間: 2025-3-26 21:03 作者: 吸氣 時間: 2025-3-27 02:28 作者: Debrief 時間: 2025-3-27 08:57
Nineteenth-Century Major Lives and Lettersge of speeds for a number of years now. They have nearly completely taken the place of magnetic core memories. The availability of devices with ever larger storage capacities brings us correspondingly nearer to the long-discussed goal of also employing semiconductor memories in those applications wh作者: Explicate 時間: 2025-3-27 10:24
Romantic Love in the Arab Worldf applications. With regard to their function, they take a position midway between the electronic read-write memories and digital logic circuits as well as switching networks. They have a common form of organization as RAMs and a similar circuit configuration, evident for instance from the designati作者: finite 時間: 2025-3-27 16:19
Romantic Love in Cultural Contextser one drawback of the customary read-write semiconductor memories with random access (RAMs), namely the volatility of the stored information: The stored information may be lost in case of disconnection or unintended interruption of the supply voltages, even if the dropout lasts only a few milliseco作者: NAVEN 時間: 2025-3-27 21:04
https://doi.org/10.1057/9780230287754ization is perpendicular to the plane of the plate (Fig. 1). The magnetic bubble is separated from its environment by the cylindrical magnetic domain wall. The magnetization in the domain wall rotates through 180 degrees. In a bubble domain memory the presence of a magnetic bubble at a particular pl作者: Lamina 時間: 2025-3-28 00:05 作者: 就職 時間: 2025-3-28 04:26 作者: Vertebra 時間: 2025-3-28 09:51 作者: 小卒 時間: 2025-3-28 10:54
Romantic Poetry and Literary Coteriesperties of coherent light often masked the difficulties with the introduction of optical storage techniques. By these means, systems were proposed superior to existing stores by orders of magnitude but with the disadvantage of non-feasibility. It had been overlooked that the limits of optical method作者: LIMN 時間: 2025-3-28 17:06
Overview: 978-3-528-08409-7978-3-322-83629-8作者: 健談的人 時間: 2025-3-28 21:01
https://doi.org/10.1007/978-1-349-03744-5rge monolithic memories in MOSFET technology for the main stores and for control stores. These memories have proven their feasibility and reliability in several thousand systems during the last three years.作者: 巨頭 時間: 2025-3-29 00:38 作者: 反話 時間: 2025-3-29 07:08
http://image.papertrans.cn/d/image/279563.jpg作者: Affection 時間: 2025-3-29 07:16 作者: MIME 時間: 2025-3-29 12:48
Romanticism and ‘Exaggeration of Thought’ last few years. Microcomputers are a main application field for the most important types of semiconductor memories as shown in Table 1. Fundamentally two groups of memories have to be distinguished, namely read-write memories (RWMs), most of them random-access memories (RAMs),作者: Offset 時間: 2025-3-29 17:30 作者: 紀(jì)念 時間: 2025-3-29 22:37 作者: 比賽用背帶 時間: 2025-3-30 00:12
https://doi.org/10.1057/9780230287754has been achieved in the meantime. Today, ferromagnetic domain memories are poised on the threshold of many practical applications, and they must be considered as genuine alternatives to conventional storage devices.作者: Ingratiate 時間: 2025-3-30 07:05
Romantic Love in the Arab Worldbiguous and generally unalterable logic relationship between the signals on the input and output lines, which is determined by the information they have stored. Depending on the particular application, the predominant aspect may be in one case that of a data memory, in another case that of a logic network.作者: VEN 時間: 2025-3-30 09:54
https://doi.org/10.1057/9780230287754ble memory is moving out of the research laboratories to the development of engineering models. Several companies have installed pilot lines in order to study fabrication and yield problems and to provide samples for various in-house and external applications.作者: PANT 時間: 2025-3-30 13:10
Read-Only Memories with Magnetic Components or with Integrated Semiconductor Circuitsbiguous and generally unalterable logic relationship between the signals on the input and output lines, which is determined by the information they have stored. Depending on the particular application, the predominant aspect may be in one case that of a data memory, in another case that of a logic network.作者: cornucopia 時間: 2025-3-30 19:35 作者: Allege 時間: 2025-3-30 23:44
Electromechanical Mass Storage Units — Disk Filesh are worked on directly by the processor are, in spite of their substantial growth in the past years, in no way capable of accepting all necessary data. The sum of all data relevant to a system is thus filed in the secondary storage units. Disk files and magnetic tape units are the most important secondary storage units.作者: dry-eye 時間: 2025-3-31 02:02
Fabrication Technology and Physical Fundamentals of Components Used for Semiconductor Memories last few years. Microcomputers are a main application field for the most important types of semiconductor memories as shown in Table 1. Fundamentally two groups of memories have to be distinguished, namely read-write memories (RWMs), most of them random-access memories (RAMs),作者: ureter 時間: 2025-3-31 07:07
Readout Methods and Readout Circuits for Dynamic Charge-Storage Elementsvelopment was the principle of dynamic charge storage. This principle involves the storage of mobile charge at the Si-SiO. interface. Depending on whether a small or large number of charges are stored, a binary “1” or “O” is present in the memory cell.作者: 準(zhǔn)則 時間: 2025-3-31 10:09
Physical Principles of Magnetic Bubble Domain Memory Deviceswall. The magnetization in the domain wall rotates through 180 degrees. In a bubble domain memory the presence of a magnetic bubble at a particular place and at a particular point of time represents a digital ‘one’, and its absence represents a ‘zero’.作者: 笨重 時間: 2025-3-31 13:36
Ferromagnetic Domain Memorieshas been achieved in the meantime. Today, ferromagnetic domain memories are poised on the threshold of many practical applications, and they must be considered as genuine alternatives to conventional storage devices.作者: CRAFT 時間: 2025-3-31 19:17
https://doi.org/10.1007/978-3-7091-1379-0 and read electronics lead to a gradual transition of the magnetization and a finite width of the readback pulse. The length of the readback pulse, mechanical limitations as well as media and electronic noise determine the highest recording density.作者: LAY 時間: 2025-3-31 22:13 作者: 兇殘 時間: 2025-4-1 04:39 作者: photopsia 時間: 2025-4-1 06:51
Nineteenth-Century Major Lives and Lettersich were previously reserved for smaller serial magnetic memories, such as drums and fixed-head disks. The most likely contenders in this respect are charge-coupled device memories (CCD memories). It is the intent of this study to deal with the principles, characteristics and potential applications of the CCD memories.作者: Commemorate 時間: 2025-4-1 11:53
Romantic Poetry and Literary Coteriess in most cases are determined by material properties and not by light properties like wavelength or light velocity. This experience initiated a period of enhanced material studies for optical data storage.作者: 遺產(chǎn) 時間: 2025-4-1 17:30 作者: Astigmatism 時間: 2025-4-1 21:04 作者: GULP 時間: 2025-4-2 02:05
LSI Semiconductor Memoriesural squares. Estimated factors representing the refinement of the structures and the increase in the permissible chip size provide an indication of possible improvements and ultimate limits for the device storage capacity and the cost per bit of dynamic MOS memory devices.
