標(biāo)題: Titlebook: Diffusion Processes in Advanced Technological Materials; Devendra Gupta (Emeritus Research Staff Member) Book 2005 Springer-Verlag Berlin [打印本頁(yè)] 作者: Asphyxia 時(shí)間: 2025-3-21 18:14
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作者: Trigger-Point 時(shí)間: 2025-3-21 22:09
Solid State Diffusion and Bulk Properties,relation factor .=lattice parameter .=jump frequency Δ.*=activation entropy Δ.*=activation enthalpy .=universal gas constant .=temperature, in degrees Kelvin Furthermore, the enthalpy and free energy (Δ.*)of activation for diffusion are given by: 作者: 帶傷害 時(shí)間: 2025-3-22 03:37 作者: 百靈鳥(niǎo) 時(shí)間: 2025-3-22 08:13
Bulk and Grain Boundary Diffusion in Intermetallic Compounds, metals. The intermetallic compounds exist in a variety of lattice structures: from the simplest, such as .2 (NiAl, FeAl) and .1. (TiAl, CuAu), to very sophisticated configurations, such as quasicrystalline .-AlCuFe. The short- and long-range order are important phenomena of the intermetallic compou作者: figurine 時(shí)間: 2025-3-22 10:33 作者: flaunt 時(shí)間: 2025-3-22 14:33 作者: flaunt 時(shí)間: 2025-3-22 20:29 作者: 向前變橢圓 時(shí)間: 2025-3-23 01:08
Measurement of Stresses in Thin Films and Their Relaxation,ed, using only small amounts of materials. For example, the high density and fast performance of modern computers have been possible due to the incorporation of multilayer thin-film structures coupled with submicron photolithography on the back of the active devices formed in Si chips. Because thin-作者: geometrician 時(shí)間: 2025-3-23 02:26
Electromigration in Cu Thin Films,has increased each and every year since its initial commercialization in 1997 by DBM.[.] Chips with Cu wiring have improved conductivity, which has resulted in reduced RC time delays for wiring, where R is resistance and C is capacitance. When IC chip technology is extended below 0.2-μm dimension, t作者: groggy 時(shí)間: 2025-3-23 05:51 作者: 職業(yè) 時(shí)間: 2025-3-23 13:29
ontains an entire chapter devoted to computer simulations ofMy 12-year-old granddaughter Nina Alesi once asked me, "Grandpa, you are a scientist at IBM, so what do you do?" I tried to reply, "Oh, I watch atoms move. . . " But before I could finish this sentence, my 7-year-old grandson Vinnie interje作者: 密切關(guān)系 時(shí)間: 2025-3-23 17:44 作者: 難取悅 時(shí)間: 2025-3-23 18:43 作者: Legion 時(shí)間: 2025-3-23 23:52
References no. 18421–21504 / ABD — ZYLprocesses involving higher temperatures than those used for the deposition. This chapter discusses techniques for measuring stresses in thin metal films attached to substrates and their relaxation by plastic deformation and diffusional creep.作者: Debrief 時(shí)間: 2025-3-24 04:51 作者: 一個(gè)姐姐 時(shí)間: 2025-3-24 08:45
Reactive Phase Formation: Some Theory and Applications,ereof with Sn during soldering. Such phenomena are not only important in electronic technology; they are encountered in an endless variety of conditions, as in the high-temperature reactions between finely divided oxide particles to form cements. Limoge and Boquet[.] provide excellent general information about such phenomena.作者: 安心地散步 時(shí)間: 2025-3-24 12:05 作者: 開(kāi)玩笑 時(shí)間: 2025-3-24 14:57 作者: inspired 時(shí)間: 2025-3-24 20:04
References no. 15368–18420 / ABD-ZUT polymer glass transition, which can be depressed at the surface[., .] metal clusters are generally embedded in the polymer and, depending on their size and the polymer viscosity, may perform a Brownian motion.[., .]作者: 蚊帳 時(shí)間: 2025-3-25 02:52
Diffusion in Bulk Solids and Thin Films: Some Phenomenological Examples,e volumes. The mixing rate depends on the concentration difference and is inversely proportional to the square root of the density of the gas. Furthermore, he established that “.,” and that the diffusion rates in liquids are much slower than in gases. These concepts later became the bases for mathematical treatment of the diffusion process.作者: ROOF 時(shí)間: 2025-3-25 06:30
Metal Diffusion in Polymers and on Polymer Surfaces, polymer glass transition, which can be depressed at the surface[., .] metal clusters are generally embedded in the polymer and, depending on their size and the polymer viscosity, may perform a Brownian motion.[., .]作者: Hormones 時(shí)間: 2025-3-25 08:51
Book 2005move. . . " But before I could finish this sentence, my 7-year-old grandson Vinnie interjected, "Grandpa, do atoms play soccer?" This book is about the games atoms play in diffusion and various other properties of materials. While diffusion has been studied for more than 100 years in solids, its imp作者: 輕彈 時(shí)間: 2025-3-25 14:48 作者: 付出 時(shí)間: 2025-3-25 18:38
terials pack- ages is determined by diffusion, a highly interactive and synergic phe- nomenon that interrelates to the microstructure, the microchemistry, and the superimposed physical fields. While the various978-3-642-06019-9978-3-540-27470-4作者: Medicaid 時(shí)間: 2025-3-25 21:58
Reference-dependent preferencesture, and the defect type and content), the temperature, and the surroundings of the materials in contact with each other. Such diffusion and mixing lead to changes in the properties of the materials, sometimes to a better material and other times to an undesirable material behavior.作者: 不可磨滅 時(shí)間: 2025-3-26 02:33 作者: 一條卷發(fā) 時(shí)間: 2025-3-26 07:59
References no. 21505-25161 / AAR-ZURffusion manifests itself in the fabrication of HTSC elements. In the bulk production of tapes and wires produced by the oxide-powder-in-tube (OPIT) method, for example, silver sheath is typically used and the composite is subjected to severe thermomechanical deformation.[.] In such a fabrication pro作者: 裝入膠囊 時(shí)間: 2025-3-26 12:25 作者: Melatonin 時(shí)間: 2025-3-26 16:15
Diffusion Processes in Advanced Technological Materials978-3-540-27470-4作者: 窗簾等 時(shí)間: 2025-3-26 19:23
Diffusion Barriers in Semiconductor Devices/Circuits,ture, and the defect type and content), the temperature, and the surroundings of the materials in contact with each other. Such diffusion and mixing lead to changes in the properties of the materials, sometimes to a better material and other times to an undesirable material behavior.作者: 演講 時(shí)間: 2025-3-26 22:28
Electromigration in Cu Thin Films,the formation of voids or extrusions, resulting in failure of the chips. Electromigration in Al(Cu) thin films has been a subject of extensive studies for several decades.[.–.] Investigators have reported that electromigration in Al thin-film lines is related to grain boundary diffusion,[.] interfac作者: agonist 時(shí)間: 2025-3-27 01:54 作者: Adenocarcinoma 時(shí)間: 2025-3-27 06:02 作者: 施加 時(shí)間: 2025-3-27 10:41
Atomistic Computer Simulation of Diffusion,long with continuum modeling aimed at describing diffusion processes by differential equations, atomic-level modeling is playing an increasingly important role as a means of gaining fundamental insights into diffusion phenomena.作者: Malleable 時(shí)間: 2025-3-27 15:52 作者: 不如屎殼郎 時(shí)間: 2025-3-27 21:32 作者: SEVER 時(shí)間: 2025-3-28 00:44 作者: 乞丐 時(shí)間: 2025-3-28 04:34 作者: 寬大 時(shí)間: 2025-3-28 09:57 作者: Vulvodynia 時(shí)間: 2025-3-28 12:24
https://doi.org/10.1007/978-94-017-2868-3relation factor .=lattice parameter .=jump frequency Δ.*=activation entropy Δ.*=activation enthalpy .=universal gas constant .=temperature, in degrees Kelvin Furthermore, the enthalpy and free energy (Δ.*)of activation for diffusion are given by: 作者: 充滿裝飾 時(shí)間: 2025-3-28 16:28 作者: AGGER 時(shí)間: 2025-3-28 21:43
Reference-dependent preferences metals. The intermetallic compounds exist in a variety of lattice structures: from the simplest, such as .2 (NiAl, FeAl) and .1. (TiAl, CuAu), to very sophisticated configurations, such as quasicrystalline .-AlCuFe. The short- and long-range order are important phenomena of the intermetallic compou作者: Chandelier 時(shí)間: 2025-3-29 02:55 作者: Control-Group 時(shí)間: 2025-3-29 04:41 作者: SNEER 時(shí)間: 2025-3-29 07:41
References no. 15368–18420 / ABD-ZUT,.] Diffusion of metal atoms, and sometimes also of small clusters, along the polymer surface determines nucleation and growth of metal films on polymers and hence has a strong effect on the resulting microstructure.[.] Recently, there is also great interest in nano-size metal clusters, which form b
