標題: Titlebook: Devices Based on Low-Dimensional Semiconductor Structures; Minko Balkanski Book 1996 Kluwer Academic Publishers 1996 Exciton.Interferomete [打印本頁] 作者: architect 時間: 2025-3-21 16:59
書目名稱Devices Based on Low-Dimensional Semiconductor Structures影響因子(影響力)
書目名稱Devices Based on Low-Dimensional Semiconductor Structures影響因子(影響力)學(xué)科排名
書目名稱Devices Based on Low-Dimensional Semiconductor Structures網(wǎng)絡(luò)公開度
書目名稱Devices Based on Low-Dimensional Semiconductor Structures網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Devices Based on Low-Dimensional Semiconductor Structures被引頻次
書目名稱Devices Based on Low-Dimensional Semiconductor Structures被引頻次學(xué)科排名
書目名稱Devices Based on Low-Dimensional Semiconductor Structures年度引用
書目名稱Devices Based on Low-Dimensional Semiconductor Structures年度引用學(xué)科排名
書目名稱Devices Based on Low-Dimensional Semiconductor Structures讀者反饋
書目名稱Devices Based on Low-Dimensional Semiconductor Structures讀者反饋學(xué)科排名
作者: 影響 時間: 2025-3-21 22:21
Hot Hole Effects in Strained Multi-Quantum-Well Heterostructures Ge/GeSited as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers [1] and r作者: creditor 時間: 2025-3-22 04:17 作者: 多產(chǎn)魚 時間: 2025-3-22 07:03
https://doi.org/10.1007/978-3-319-44694-3ted as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers [1] and r作者: 勉勵 時間: 2025-3-22 08:45
M. J. Bishop,Elizabeth Boling,Vanessa Svihla [2]. The usage of the peculiarity of these distributions gives an opportunity to increase the average electron velocity at certain conditions. We consider for this purpose the HS with special layers intended for the stimulation of emission of LOP at assigned places. The spatially localized emission作者: Discrete 時間: 2025-3-22 16:25 作者: Discrete 時間: 2025-3-22 18:52
Book 1996of pseudomorphic HEMTtechnology, device physics and materials layer design are presented.Each aspect is reviewed from the elementary basics up to the latestdevelopments. ..Audience:. Undergraduates in electrical engineering, graduates inphysics and engineering schools. Useful for active scientists a作者: 有常識 時間: 2025-3-22 22:30 作者: 脫毛 時間: 2025-3-23 05:17
Using Gaseous Sources in Molecular Beam Epitaxy use of gaseous organometallic group IE sources in selective-area epitaxy, either by laser irradiation or on patterned substrates. Finally the use of gaseous dopant sources are described, in particular, carbon doping with halomethanes.作者: 違法事實 時間: 2025-3-23 06:22 作者: 博識 時間: 2025-3-23 10:12 作者: Malfunction 時間: 2025-3-23 15:36
Peer Review in Scholarly Journal Publishingis ensured by a relatively low growth rate, generally about lμm per hour, allowing proper surface migration of the atomic species. The source beams can be interrupted very quickly by simple mechanical shutters so that changes in composition and doping can be abrupt on an atomic scale.作者: 伴隨而來 時間: 2025-3-23 20:14 作者: bisphosphonate 時間: 2025-3-23 23:52 作者: 高談闊論 時間: 2025-3-24 02:21
The Nature of Mixed Methods Researchan array of quantum sized islands due to Stranski-Krastanov growth mode [2]. In the present work we demonstrate MBE growth of (In,Ga)As QD in GaAs matrix leading to an injection lasing at room temperature [3].作者: 沙漠 時間: 2025-3-24 08:30
Kathryn J. Saunders,Dean C. Williamsdeep physical understanding. Modeling the complex photodetection and noise processes requires a good knowledge of different elementary mechanisms: injection efficiency of the contacts, electric field distribution, balance between photoionization and capture in the quantum wells, transport and scattering in the barriers.作者: 諂媚于性 時間: 2025-3-24 11:29
Patricia A. Young,Tutaleni I. Asinoe this problem but the advantage of the path-integral method in real space and time is that it provides an adequate treatment of both the states near the band gap center and the band tail states. This is the reason of choosing the latter for our problem.作者: Fester 時間: 2025-3-24 16:58 作者: 物種起源 時間: 2025-3-24 20:22 作者: 消音器 時間: 2025-3-24 23:24
MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applicationsan array of quantum sized islands due to Stranski-Krastanov growth mode [2]. In the present work we demonstrate MBE growth of (In,Ga)As QD in GaAs matrix leading to an injection lasing at room temperature [3].作者: chronology 時間: 2025-3-25 06:09 作者: 代替 時間: 2025-3-25 10:50
Path-Integral Calculation of the Electron Density of States in Mis-Structurese this problem but the advantage of the path-integral method in real space and time is that it provides an adequate treatment of both the states near the band gap center and the band tail states. This is the reason of choosing the latter for our problem.作者: Obstacle 時間: 2025-3-25 13:56
Interferometer with Nonlinear Frequency Doubling Mirrors as Lossless All-Optical Switching Device showed that the process of phase shift is much more efficient if in both arms of the Mach Zehnder interferometer it is used χ. media, tuned for quasi phase matched second harmonic generation (SHG) [ 12–14].作者: Atrium 時間: 2025-3-25 17:40
Solid Source Molecular Beam Epitaxyms of the constituent elements crystallize on a substrate maintained at an elevated temperature under ultra-high vacuum environment. The composition of the grown epilayer and its doping level depend directly on the evaporation rate of the elemental sources. The smoothness of the surface of the film 作者: Constrain 時間: 2025-3-25 21:05
Using Gaseous Sources in Molecular Beam Epitaxyes, which makes the growth of phosphides possible (before the very recent development of valved crackers). New issues in growth of phosphides arise, however; for example, As/P exchange at arsenide/phosphide interfaces and controlling the group V composition in a mixed As+P alloy. Then we discuss the作者: 小歌劇 時間: 2025-3-26 01:29 作者: Infuriate 時間: 2025-3-26 07:45
The Role of Spontaneous Emission in Laser Diode Operation is the basis of laser action. Nevertheless, even though this stimulated emission dominates the coherent optical output of the laser, for lasers operating at wavelengths below about lfim it is the somewhat less glamorous process of spontaneous emission which is responsible for the intrinsic current 作者: 幼稚 時間: 2025-3-26 08:48 作者: 肉體 時間: 2025-3-26 15:44 作者: 憂傷 時間: 2025-3-26 20:48
The Physics of Quantum Well Infrared Detectorsllow them to be considered as an alternative to HgCdTe detectors (1). Two different models, namely photoconductive (1,2) or photoemissive (3), have been proposed to describe the electro-optical behavior of QWIPs, depending on the electrical approach of the device (extrinsic photoconductor, Schottky 作者: 殺死 時間: 2025-3-26 22:47
Surface, Leaky and Singular Magnetoplasmons along the Interface of Gyrotropic Semiconductortic wave propagation in anisotropic media. The detail investigation of magnetoplasmons has been encouraged by the successful use of the hydrodynamic model to study electron layer in parabolic quantum well [1].作者: 擦掉 時間: 2025-3-27 03:25
Optical and Theoretical Assessment of GaAs Quantum Wells Having Superlattices as Barrier Layers of SL structures as prelayers suppress the defect diffusion from the substrate to the QW and relieves the strain caused by the small lattice mismatch between GaAs and AlGaAs. Besides, a better control of the structural system parameters is possible which is important especially in the case of growt作者: 意外 時間: 2025-3-27 09:10
Anisotropy of Optical Characteristics of Low-dimensional and Bulk Many-Valley Semiconductorsy bands gives rise to a number of peculiarities of optical characteristics. In this work it is shown theoretically tuperlattices depends on a light polarization. We also report about experimental observation of self - induced birefringence of intense IR light (.2 laser radiation) in bulk crystals of作者: Chandelier 時間: 2025-3-27 13:27 作者: 營養(yǎng) 時間: 2025-3-27 15:28
Enhancement of Average Velocity of Hot Carriers in Saw-Toothed Heterostructuresimensions of electronic devices are well known. We consider some opportunities of the increase of the average velocity of ensemble of electrons in heterostructures (HS). The average velocity of electrons in semiconductors in strong field is saturated due to the scattering with emission of longitudin作者: 詞匯記憶方法 時間: 2025-3-27 20:48
Path-Integral Calculation of the Electron Density of States in Mis-Structuresm both the technological and fundamental point of view. Semiconductor device characteristics critically depend on the electronic density of states in the band gap tail region. The lack of information near the semiconductor band edges is a well known disadvantage of the experimental methods for obtai作者: 倔強不能 時間: 2025-3-27 22:07 作者: Magnitude 時間: 2025-3-28 04:49
Interferometer with Nonlinear Frequency Doubling Mirrors as Lossless All-Optical Switching Deviceerferometer with two phase conjugate mirrors has been used for measurement of both the real and theimaginary part of cubic susceptibilities [2–5] and for measurement of the fidelity of the phase conjugate process as well [6]. Mach Zehnder interferometer with nonlinear cubic media in both arms [7,8] 作者: 得罪 時間: 2025-3-28 09:23 作者: 背叛者 時間: 2025-3-28 11:07
https://doi.org/10.1007/978-1-4899-0906-0ctures but also for applications since a voltage is applied onto any device structure, for example to control a switch (electro-optical modulator), generate a light beam (light-emitting diode, laser) or convert a light signal into an electric current (photo-detector).作者: 臥虎藏龍 時間: 2025-3-28 16:25 作者: 充氣女 時間: 2025-3-28 22:33
Eliot Shimoff,A. Charles Cataniatic wave propagation in anisotropic media. The detail investigation of magnetoplasmons has been encouraged by the successful use of the hydrodynamic model to study electron layer in parabolic quantum well [1].作者: Phagocytes 時間: 2025-3-29 01:05 作者: 增長 時間: 2025-3-29 04:21 作者: Frequency 時間: 2025-3-29 10:00
Peter J. Fadde,Patricia Sullivanhen the photon energy is close to resonance with the band gap energy of the semiconductor. This has provided a fertile area of research for both new physics and device applications over the past 15 years.作者: 騷擾 時間: 2025-3-29 12:23 作者: GLIB 時間: 2025-3-29 17:20
Negative Reinforcement and PunishmentDuring last ten years, there has been increasing interest and considerable experimental and theoretical activity focused on Semimagnetic Semiconductors (S.M.S.C.) or Diluted Magnetic Semiconductors (D.M.S.) which have some unique properties that enhance their potential for use in a wide range of optoelectronic device applications [1–5].作者: DAMP 時間: 2025-3-29 20:03 作者: Infraction 時間: 2025-3-30 01:15
https://doi.org/10.1007/978-1-4615-4165-3Guided-wave Mach-Zehnder intensity modulators are key elements for a variety of applications in optical communications. They usually present a broad operation band and low drive voltages. Two general ways for fabrication of such modulators on LiNbCO. are known - by standard Ti-indiffusion and by proton exchange with additional annealing.作者: 捏造 時間: 2025-3-30 07:50
Dennis Drotar,Kristin A. RiekertThe interest in the properties of a waveguiding structure consisting of a coupled single-mode optical fiber and planar waveguide (PWG)- fig. l, has grown recently because of the various applications it could have [1], [2], [3].作者: Nonflammable 時間: 2025-3-30 10:00 作者: Alpha-Cells 時間: 2025-3-30 12:35 作者: overrule 時間: 2025-3-30 17:15 作者: fodlder 時間: 2025-3-30 23:49
Evanescent Field Coupling Between a Single Mode Optical Fiber and a Planar WaveguideThe interest in the properties of a waveguiding structure consisting of a coupled single-mode optical fiber and planar waveguide (PWG)- fig. l, has grown recently because of the various applications it could have [1], [2], [3].作者: 分離 時間: 2025-3-31 01:14 作者: IRATE 時間: 2025-3-31 08:32
978-94-010-6615-0Kluwer Academic Publishers 1996作者: habitat 時間: 2025-3-31 12:57 作者: G-spot 時間: 2025-3-31 15:23
https://doi.org/10.1007/978-1-4899-0906-0es, which makes the growth of phosphides possible (before the very recent development of valved crackers). New issues in growth of phosphides arise, however; for example, As/P exchange at arsenide/phosphide interfaces and controlling the group V composition in a mixed As+P alloy. Then we discuss the作者: Manifest 時間: 2025-3-31 20:03
https://doi.org/10.1007/978-1-4899-0906-0ctures but also for applications since a voltage is applied onto any device structure, for example to control a switch (electro-optical modulator), generate a light beam (light-emitting diode, laser) or convert a light signal into an electric current (photo-detector).作者: Noisome 時間: 2025-3-31 23:08
https://doi.org/10.1007/978-1-4899-0906-0 is the basis of laser action. Nevertheless, even though this stimulated emission dominates the coherent optical output of the laser, for lasers operating at wavelengths below about lfim it is the somewhat less glamorous process of spontaneous emission which is responsible for the intrinsic current 作者: 指耕作 時間: 2025-4-1 04:08 作者: BRIDE 時間: 2025-4-1 07:48
