標(biāo)題: Titlebook: Deterministic Solvers for the Boltzmann Transport Equation; Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemann Book 2011 Springer-Verlag/Wien [打印本頁] 作者: Awkward 時(shí)間: 2025-3-21 17:53
書目名稱Deterministic Solvers for the Boltzmann Transport Equation影響因子(影響力)
書目名稱Deterministic Solvers for the Boltzmann Transport Equation影響因子(影響力)學(xué)科排名
書目名稱Deterministic Solvers for the Boltzmann Transport Equation網(wǎng)絡(luò)公開度
書目名稱Deterministic Solvers for the Boltzmann Transport Equation網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Deterministic Solvers for the Boltzmann Transport Equation被引頻次
書目名稱Deterministic Solvers for the Boltzmann Transport Equation被引頻次學(xué)科排名
書目名稱Deterministic Solvers for the Boltzmann Transport Equation年度引用
書目名稱Deterministic Solvers for the Boltzmann Transport Equation年度引用學(xué)科排名
書目名稱Deterministic Solvers for the Boltzmann Transport Equation讀者反饋
書目名稱Deterministic Solvers for the Boltzmann Transport Equation讀者反饋學(xué)科排名
作者: 向下 時(shí)間: 2025-3-21 22:59 作者: 祖?zhèn)?nbsp; 時(shí)間: 2025-3-22 01:59
978-3-7091-1119-2Springer-Verlag/Wien 2011作者: 斜 時(shí)間: 2025-3-22 07:11
Sung-Min Hong,Anh-Tuan Pham,Christoph Jungemannfirst book on deterministic Boltzmann solvers for semiconductor devices.first comprehensive description of the required numerical methods.describes very recent and significant advances in the field of作者: 最有利 時(shí)間: 2025-3-22 09:15
Computational Microelectronicshttp://image.papertrans.cn/d/image/269345.jpg作者: obstinate 時(shí)間: 2025-3-22 15:35
Abel Decmann,Attila Patócs,Peter IgazA device simulator for nanoscale strained SiGe double gate PMOSFETs based on the self-consistent solution of the 1D SE, 2D PE, and multi subband 1D BTE is developed, which is applicable for arbitrary crystallographic orientations and arbitrary channel directions.作者: obstinate 時(shí)間: 2025-3-22 18:20 作者: Neuralgia 時(shí)間: 2025-3-22 23:28
https://doi.org/10.1007/978-3-642-86814-6In this chapter a deterministic method used to solve the multisubband BTE is presented. The method is based on the Fourier expansion of the distribution function in the 2D .-space, which is analogous to the spherical harmonic expansion method for the bulk case [1].作者: 充滿人 時(shí)間: 2025-3-23 02:19
Bayesian Multilocus Linkage MappingThe electrostatic potential . (.,?.) in the device is the solution of the PE . where κ is dielectric constant, . is the positive elementary charge, and .. and .. are the ionized acceptor and donor concentrations, In this work the acceptors and donors are assumed to be completely ionized.作者: 肥料 時(shí)間: 2025-3-23 08:17 作者: 沙草紙 時(shí)間: 2025-3-23 09:57 作者: 芭蕾舞女演員 時(shí)間: 2025-3-23 16:20 作者: ALIBI 時(shí)間: 2025-3-23 18:26 作者: 雜色 時(shí)間: 2025-3-23 23:00 作者: 財(cái)產(chǎn) 時(shí)間: 2025-3-24 04:56
On Mandating Diagnostic Practicesling is expected to continue for some time [2]. For such scaled devices, transport can no longer be described accurately by momentum based models (drift-diffusion or hydrodynamic models) [3,?4], which fail even in the linear transport regime [5,?6].作者: Commonwealth 時(shí)間: 2025-3-24 08:17
On Mandating Diagnostic Practicesling is expected to continue for some time [2]. For such scaled devices, transport can no longer be described accurately by momentum based models (drift-diffusion or hydrodynamic models) [3,?4], which fail even in the linear transport regime [5,?6].作者: aerial 時(shí)間: 2025-3-24 11:52 作者: chalice 時(shí)間: 2025-3-24 17:23
https://doi.org/10.1007/978-1-4684-4952-5ipation scheme, which are two key ingredients for a stable higher-order SHE simulation, are expounded. Moreover, in the special case of the lowest order expansion, it is explicitly shown that the Jacobian matrix of the resultant set of equations is a non-singular M-matrix. Therefore, the non-negativ作者: 一再困擾 時(shí)間: 2025-3-24 20:58 作者: excursion 時(shí)間: 2025-3-25 01:40
Genetics of Endocrine Diseases and Syndromesinvestigated by comparison with full band MC results. Also noise simulations and magneto transport are demonstrated for this kind of device. Second, MOSFET devices are simulated. The impact of the Pauli principle is investigated for a double-gate MOSFET. A partially-depleted SOI MOSFET is selected t作者: Inelasticity 時(shí)間: 2025-3-25 06:06 作者: glamor 時(shí)間: 2025-3-25 10:34 作者: 收藏品 時(shí)間: 2025-3-25 15:17
Genetic Evaluation of Male Infertilityng the simulation results to the long-channel low-field mobility measurements for bulk Si PMOSFETs from Takagi [5] at three lattice temperatures 223, 300, and 443?K shown in Fig.?12.1 (top). As in [3,?4], a phonon energy of .ω?=?61.?2?meV was used and kept fixed in this work. The other four scatteri作者: cavity 時(shí)間: 2025-3-25 18:38
0179-0307 scribes very recent and significant advances in the field ofThe book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization 作者: interpose 時(shí)間: 2025-3-25 22:53
Book 2011done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schr?dinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.作者: Concerto 時(shí)間: 2025-3-26 00:36
https://doi.org/10.1007/978-1-4684-4952-5eness of the solution (the isotropic component of the particle distribution function) is guaranteed. Dimensional splitting and box integration are applied. Discretization of the boundary conditions is also discussed. At the end of this chapter, stabilization of the linearized equation system for the small-signal analysis is presented.作者: 平庸的人或物 時(shí)間: 2025-3-26 04:47 作者: 果仁 時(shí)間: 2025-3-26 12:10
Book 2011in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for bu作者: 西瓜 時(shí)間: 2025-3-26 15:19
Conversation with Silent Patientsgy space is introduced, and some important relations between transport coefficients in the energy space are explicitly derived. The spherical harmonics expansion of the BTE is shown in Sect.?2.5. Finally, noise analysis within the Langevin-Boltzmann framework is discussed in Sect.?2.6.作者: 彩色 時(shí)間: 2025-3-26 19:14
https://doi.org/10.1007/978-1-4684-4952-5 Several band models for electrons, which can be used within the SHE solver, are introduced. In the last section of this chapter, the scattering mechanisms considered in this work are briefly presented.作者: 作繭自縛 時(shí)間: 2025-3-26 21:25
The Boltzmann Transport Equation and Its Projection onto Spherical Harmonicsgy space is introduced, and some important relations between transport coefficients in the energy space are explicitly derived. The spherical harmonics expansion of the BTE is shown in Sect.?2.5. Finally, noise analysis within the Langevin-Boltzmann framework is discussed in Sect.?2.6.作者: 遺留之物 時(shí)間: 2025-3-27 02:10 作者: 裹住 時(shí)間: 2025-3-27 08:28 作者: 規(guī)范要多 時(shí)間: 2025-3-27 10:28
Resultso demonstrate the numerical robustness of the SHE solver. Finally, SiGe HBTs are investigated. Comparison of the SHE results with full band MC data is followed by characterization of the DC and RF performance of a 2D SiGe HBT.作者: synovitis 時(shí)間: 2025-3-27 15:17
0179-0307 structure of the quasi 2D hole gas. Efficient methods for building the Schr?dinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.978-3-7091-1119-2978-3-7091-0778-2Series ISSN 0179-0307 作者: indignant 時(shí)間: 2025-3-27 20:49 作者: 喃喃而言 時(shí)間: 2025-3-27 23:44 作者: 豐滿有漂亮 時(shí)間: 2025-3-28 04:28
Introductionling is expected to continue for some time [2]. For such scaled devices, transport can no longer be described accurately by momentum based models (drift-diffusion or hydrodynamic models) [3,?4], which fail even in the linear transport regime [5,?6].作者: degradation 時(shí)間: 2025-3-28 09:15
The Boltzmann Transport Equation and Its Projection onto Spherical Harmonicsthe three-dimensional wave vector space is introduced in Sect.?2.1. The PE is required for the calculation of the electric field, which enters the BTE. If only one carrier type is simulated, a drift-diffusion model is solved for the other type. The PE and drift-diffusion model are discussed in Sect.作者: 深淵 時(shí)間: 2025-3-28 13:45
Device Simulationipation scheme, which are two key ingredients for a stable higher-order SHE simulation, are expounded. Moreover, in the special case of the lowest order expansion, it is explicitly shown that the Jacobian matrix of the resultant set of equations is a non-singular M-matrix. Therefore, the non-negativ作者: 注意 時(shí)間: 2025-3-28 16:04 作者: Mets552 時(shí)間: 2025-3-28 21:51 作者: 佛刊 時(shí)間: 2025-3-29 00:45
Efficient 2D k-Space Discretization and Non-Linear Interpolation Schemese denoted as .,??. The foci of this section are the efficient 2D .-space discretization and non-linear interpolation schemes. The . ?. solver consumes typically the largest part of the CPU time during transport simulations including the . ?. SE [1,?2,?3]. An efficient discretization of the 2D .-spac作者: orthodox 時(shí)間: 2025-3-29 04:47 作者: 忙碌 時(shí)間: 2025-3-29 11:15
Resultsng the simulation results to the long-channel low-field mobility measurements for bulk Si PMOSFETs from Takagi [5] at three lattice temperatures 223, 300, and 443?K shown in Fig.?12.1 (top). As in [3,?4], a phonon energy of .ω?=?61.?2?meV was used and kept fixed in this work. The other four scatteri作者: Hirsutism 時(shí)間: 2025-3-29 14:10
Efficient 2D k-Space Discretization and Non-Linear Interpolation Schemessed on the coordinates .,?? has been used, which requires to solve the . ?. SE for many (.,??) grid points in order to get an accurate energy interpolation. In this work, the subband energy and the probability density function for an arbitrary in-plane wave vector are determined by an efficient inte作者: Perineum 時(shí)間: 2025-3-29 19:06
Iteration Methodsht)) with the new deterministic method to solve BTE converge linearly with simulation time similar to the Gummel loop in the classical drift-diffusion based TCAD device simulators [4,?6], and thus much faster than an MC algorithm with its square root dependence?[7]. In addition, the deterministic re作者: 救護(hù)車 時(shí)間: 2025-3-29 23:29 作者: Repetitions 時(shí)間: 2025-3-30 02:04 作者: TERRA 時(shí)間: 2025-3-30 05:40
