標(biāo)題: Titlebook: Design for Manufacturability; From 1D to 4D for 90 Artur Balasinski Book 2014 Springer Science+Business Media New York 2014 22nm technology [打印本頁] 作者: 孵化 時(shí)間: 2025-3-21 19:01
書目名稱Design for Manufacturability影響因子(影響力)
書目名稱Design for Manufacturability影響因子(影響力)學(xué)科排名
書目名稱Design for Manufacturability網(wǎng)絡(luò)公開度
書目名稱Design for Manufacturability網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Design for Manufacturability被引頻次
書目名稱Design for Manufacturability被引頻次學(xué)科排名
書目名稱Design for Manufacturability年度引用
書目名稱Design for Manufacturability年度引用學(xué)科排名
書目名稱Design for Manufacturability讀者反饋
書目名稱Design for Manufacturability讀者反饋學(xué)科排名
作者: acolyte 時(shí)間: 2025-3-21 21:25 作者: Control-Group 時(shí)間: 2025-3-22 02:48 作者: HAWK 時(shí)間: 2025-3-22 08:09 作者: 使苦惱 時(shí)間: 2025-3-22 09:52
New DfM Domain: Stress Effects,th chip and package stack design, is required to span orders of magnitude of physical dimensions. It should not only comprehend the effects of mechanical stresses in electrical responses of the circuits, but also their reliability impact.作者: 刺耳 時(shí)間: 2025-3-22 16:27
Book 2014nd quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.作者: 刺耳 時(shí)間: 2025-3-22 18:35 作者: 調(diào)情 時(shí)間: 2025-3-22 22:03
New DfM Domain: Stress Effects,pting to divide the sources of such stress into the intentional and non-intentional ones or intrinsic and extrinsic. However, a better distinction would be whether we are able to take advantage of them in product implementation (intrinsic) or are they outside the device model space (extrinsic). When作者: 多節(jié) 時(shí)間: 2025-3-23 03:18
https://doi.org/10.1007/978-1-4614-1761-322nm technology node DFM; 3D Design for manufacturability; DFM; Design for manufacturability; Integrated作者: galley 時(shí)間: 2025-3-23 07:39 作者: 性學(xué)院 時(shí)間: 2025-3-23 13:16
Anjan R. Shah MD,Henry Claude Sagi MDn for Manufacturability in the early 2010’s. Because the speed of information in this area is critical for making money in IC manufacturing, DfM is a popular topic for conferences and journals, and a directional summary is usually welcome by the experts in the field.作者: Overstate 時(shí)間: 2025-3-23 16:34
https://doi.org/10.1007/978-88-470-2123-5pting to divide the sources of such stress into the intentional and non-intentional ones or intrinsic and extrinsic. However, a better distinction would be whether we are able to take advantage of them in product implementation (intrinsic) or are they outside the device model space (extrinsic). When作者: Overstate 時(shí)間: 2025-3-23 19:44
Preface,n for Manufacturability in the early 2010’s. Because the speed of information in this area is critical for making money in IC manufacturing, DfM is a popular topic for conferences and journals, and a directional summary is usually welcome by the experts in the field.作者: CARE 時(shí)間: 2025-3-23 22:15 作者: 被告 時(shí)間: 2025-3-24 05:29
Short and Long Term Results of TreatmentIntroduction of more advanced technology nodes carries two key risks:作者: 臨時(shí)抱佛腳 時(shí)間: 2025-3-24 08:54
Short and Long Term Results of TreatmentWe have discussed three key trends in the IC Design for Manufacturability approaches of the early 2010’s, when key IC makers are moving along the Moore’s shrinkpath, passing the 28 nm technology node, on the way down to 22 nm and then, 15 nm.作者: 小步走路 時(shí)間: 2025-3-24 12:18
Classic DfM: From 2D to 3D,“Manufacturability” is the ability to make large numbers of identical products (IC devices), with substantially reproducible parameters in time and in space. Of course, these devices must perform a useful function, but that is ensured by their prototyping.作者: Supplement 時(shí)間: 2025-3-24 17:45
DfM at 28 nm and Beyond,Introduction of more advanced technology nodes carries two key risks:作者: MUTE 時(shí)間: 2025-3-24 19:30
Closure and Future Work,We have discussed three key trends in the IC Design for Manufacturability approaches of the early 2010’s, when key IC makers are moving along the Moore’s shrinkpath, passing the 28 nm technology node, on the way down to 22 nm and then, 15 nm.作者: 等級(jí)的上升 時(shí)間: 2025-3-25 01:51
Artur BalasinskiProvides design for manufacturability guidelines on layout techniques for the most advanced, 22 nm technology nodes.Includes information valuable to layout designers, packaging engineers and quality e作者: 鳥籠 時(shí)間: 2025-3-25 03:31 作者: 別名 時(shí)間: 2025-3-25 07:58 作者: 創(chuàng)造性 時(shí)間: 2025-3-25 15:38 作者: 平息 時(shí)間: 2025-3-25 17:25 作者: needle 時(shí)間: 2025-3-25 23:32 作者: 偉大 時(shí)間: 2025-3-26 01:37 作者: Leisureliness 時(shí)間: 2025-3-26 04:50 作者: 符合你規(guī)定 時(shí)間: 2025-3-26 11:15 作者: 美食家 時(shí)間: 2025-3-26 13:45 作者: muster 時(shí)間: 2025-3-26 20:47 作者: Constitution 時(shí)間: 2025-3-26 22:59 作者: FLIP 時(shí)間: 2025-3-27 03:20
The State of Modern Offensive Security, provided—a fact that can manifest itself into real issues for the assessors and the customers. Assuming all these assessment-related constraints can be addressed, there is still the personnel issues related to staffing a successful red team. This chapter covers the state of modern offensive security offerings as it pertains to these challenges.作者: Iatrogenic 時(shí)間: 2025-3-27 07:07
Tod Fullston,Helana S. Shehadeh,John E. Schjenken,Nicole O. McPherson,Sarah A. Robertson,Deirdre Zander-Fox,Michelle Lanerlusten an Blei oder Uran sind. Zur Bestimmung des Verh?ltnisses Ra G/U I, Ac D/Ac U und Th D/Th ist aber die genaue Kenntnis des chemischen U/Pb- bzw. Th/Pb-Verh?ltnisses n?tig; nur die Ac D/Ra G-Methode ist von diesem unabh?ngig. A. . [2] und F. . [3] haben im einzelnen die verschiedenen F?lle der作者: 陰郁 時(shí)間: 2025-3-27 09:50 作者: 潛移默化 時(shí)間: 2025-3-27 17:38
Thomas R?hrnostic tests or clinical measurement? included.??????????????????????? Chapters divided by organ system.??????????????????????? Practical appendixes of “Abbreviations” and “Key Telephone Numbers”.??????????????????????? A special “Notes” section for recording frequently used formulas.978-1-4614-7509-5978-1-4614-7510-1作者: antidepressant 時(shí)間: 2025-3-27 17:57 作者: 棲息地 時(shí)間: 2025-3-28 01:46 作者: Ebct207 時(shí)間: 2025-3-28 05:23
