標(biāo)題: Titlebook: Crystalline Semiconducting Materials and Devices; Paul N. Butcher,Norman H. March,Mario P. Tosi Book 1986 Springer Science+Business Media [打印本頁] 作者: credit 時間: 2025-3-21 18:44
書目名稱Crystalline Semiconducting Materials and Devices影響因子(影響力)
書目名稱Crystalline Semiconducting Materials and Devices影響因子(影響力)學(xué)科排名
書目名稱Crystalline Semiconducting Materials and Devices網(wǎng)絡(luò)公開度
書目名稱Crystalline Semiconducting Materials and Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Crystalline Semiconducting Materials and Devices被引頻次
書目名稱Crystalline Semiconducting Materials and Devices被引頻次學(xué)科排名
書目名稱Crystalline Semiconducting Materials and Devices年度引用
書目名稱Crystalline Semiconducting Materials and Devices年度引用學(xué)科排名
書目名稱Crystalline Semiconducting Materials and Devices讀者反饋
書目名稱Crystalline Semiconducting Materials and Devices讀者反饋學(xué)科排名
作者: 形上升才刺激 時間: 2025-3-21 23:20
ed potential. A direct result of this has been the development of the a-Si field-effect transistor (FET), discussed in Section 16.3, which could find applications in large-area addressable displays, in addressable image-sensing arrays, and in logic circuits.作者: 整理 時間: 2025-3-22 02:47 作者: chondromalacia 時間: 2025-3-22 06:25 作者: 易改變 時間: 2025-3-22 11:55
Book 1986c introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is作者: grudging 時間: 2025-3-22 13:24 作者: grudging 時間: 2025-3-22 19:07
James K. Galbraith,Anthony Heathucially relies on progress in the physics of semiconductors.. Supported and stimulated by the development of forefront technologies, basic research continues to blossom on this branch of materials science, in a unique interplay between pure and applied physics..作者: 污穢 時間: 2025-3-22 23:08
Daniel Stedman Jones,Ben Jacksonc semiconductors, namely semiconductors containing paramagnetic impurities, and in Section 9.4 half-metallic ferromagnets, which are metallic for spin-up electrons and semiconducting for spin-down electrons.作者: 疾馳 時間: 2025-3-23 01:51 作者: Exposition 時間: 2025-3-23 07:07
The Electronic Structure of Surfaces and Interfaces, the best example for which those new states play an important role, the reason being that new states appear at the Fermi level. These states are crucial to understanding junctions between, say, metals and semiconductors, and for clean semiconductor surfaces.作者: Hallmark 時間: 2025-3-23 13:02
Electronic States and Structural Properties of Deep Centers in Semiconductors,ucially relies on progress in the physics of semiconductors.. Supported and stimulated by the development of forefront technologies, basic research continues to blossom on this branch of materials science, in a unique interplay between pure and applied physics..作者: deciduous 時間: 2025-3-23 17:56 作者: florid 時間: 2025-3-23 21:56 作者: Chandelier 時間: 2025-3-23 23:44
James K. Galbraith,Anthony Heath the best example for which those new states play an important role, the reason being that new states appear at the Fermi level. These states are crucial to understanding junctions between, say, metals and semiconductors, and for clean semiconductor surfaces.作者: strdulate 時間: 2025-3-24 02:34
Introduction: Towards a Public Criminology,The question as to how the electrical properties of a solid — metallic, semiconducting, or insulating — are related to its chemical composition and crystal structure is indeed old. Friederich,. as long ago as 1925, reached the following conclusions on the basis of the then available experimental data:作者: reserve 時間: 2025-3-24 09:54
James K. Galbraith,Anthony HeathThis chapter deals with phonons, namely vibration modes of a periodic array of atoms in a crystal. We first summarize the basic concepts as a starting point..作者: 貴族 時間: 2025-3-24 11:19 作者: 遷移 時間: 2025-3-24 17:12
Introduction: A Sense of the Context,Ion implantation has emerged in recent years as a common technique to dope semiconductors for integrated-circuit production. Ion implantation is the introduction of energetic charged particles into a substrate. The unique advantages of ion implantation are:作者: vasculitis 時間: 2025-3-24 20:05
Bonds and Bands in Semiconductors,The question as to how the electrical properties of a solid — metallic, semiconducting, or insulating — are related to its chemical composition and crystal structure is indeed old. Friederich,. as long ago as 1925, reached the following conclusions on the basis of the then available experimental data:作者: Sciatica 時間: 2025-3-25 00:42
Phonons,This chapter deals with phonons, namely vibration modes of a periodic array of atoms in a crystal. We first summarize the basic concepts as a starting point..作者: Habituate 時間: 2025-3-25 05:31
Theory of Surface Waves,In this chapter we review the theory of surface waves from a basic standpoint. First the fundamental theory is discussed for varying degrees of complexity (such as crystal anisotropy, interfaces, overlayers, and piezoelectricity) and then we examine some of the experiments that give basic information on the spectrum of surface waves.作者: Insatiable 時間: 2025-3-25 08:33 作者: famine 時間: 2025-3-25 13:05 作者: 后退 時間: 2025-3-25 19:02
Nancy Cartwright,John Bryan Davisurface of the crystal lattice. Another case is the presence of a foreign atom in the lattice. In both cases, the force constants of the surface atoms or the foreign atom differ from that in the uniform bulk volume of the lattice and the atoms concerned have vibrations out of the perfect crystal. These vibrations are called “l(fā)ocalized modes.”作者: 性上癮 時間: 2025-3-26 00:01
Daniel Stedman Jones,Ben Jacksons of magnitude,. and is the basis of electronic devices. The technological importance of such properties has given rise to a lot of theoretical and experimental work devoted to the study of impurity states.作者: Alveoli 時間: 2025-3-26 01:50
James K. Galbraith,Anthony Heathy band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattices” to the scaling theory in 1979 is surveyed.作者: panorama 時間: 2025-3-26 04:30
Appreciating Perception and Power,ant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical devices.作者: perjury 時間: 2025-3-26 11:11 作者: 額外的事 時間: 2025-3-26 15:51 作者: Harass 時間: 2025-3-26 17:07 作者: 教唆 時間: 2025-3-27 00:06
Daniel Stedman Jones,Ben Jacksons of magnitude,. and is the basis of electronic devices. The technological importance of such properties has given rise to a lot of theoretical and experimental work devoted to the study of impurity states.作者: medieval 時間: 2025-3-27 02:45
James K. Galbraith,Anthony Heathinformation age, with the demanding goals of higher logic-circuit density, shorter switching times, and high-capacity digital transmission systems, crucially relies on progress in the physics of semiconductors.. Supported and stimulated by the development of forefront technologies, basic research co作者: 鐵塔等 時間: 2025-3-27 08:09 作者: expansive 時間: 2025-3-27 12:03 作者: 好忠告人 時間: 2025-3-27 14:53
James K. Galbraith,Anthony Heathriance is broken. This prevents us applying Bloch’s theorem, although Flochet’s theorem enters the picture: solutions forbidden by the infinite crystal can now be allowed . the finite crystal. This introduces . states, surface states, which may be important in some specific cases. Semiconductors are作者: 高腳酒杯 時間: 2025-3-27 19:40
Daniel Stedman Jones,Ben Jackson devices. Interfaces occur when differing materials make contact with the semiconductor material in a plane. Various combinations of materials that create interfaces are shown in Figure 11.1. The best-known interface occurring in semiconductors is the pn-junction, where an n-type and p-type semicond作者: Exposition 時間: 2025-3-27 22:24 作者: 工作 時間: 2025-3-28 03:03 作者: Analogy 時間: 2025-3-28 09:22
decomposition of silane. There were a number of important fundamental developments during the 1970s that established the considerable applied potential of this material and led to the present rapid growth in its use in commercial products. The first of these was the discovery,. as early as 1972, tha作者: MAIZE 時間: 2025-3-28 11:01
https://doi.org/10.1007/978-1-4757-9900-2communication; electronic structure; material; materials science; model; semiconductor; semiconductor devi作者: arabesque 時間: 2025-3-28 15:11 作者: 出血 時間: 2025-3-28 22:45
Dynamics of Localized Phonon Modes,urface of the crystal lattice. Another case is the presence of a foreign atom in the lattice. In both cases, the force constants of the surface atoms or the foreign atom differ from that in the uniform bulk volume of the lattice and the atoms concerned have vibrations out of the perfect crystal. These vibrations are called “l(fā)ocalized modes.”作者: 先驅(qū) 時間: 2025-3-29 00:27 作者: 行為 時間: 2025-3-29 03:15
Impurity Bands,y band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattices” to the scaling theory in 1979 is surveyed.作者: 瑣碎 時間: 2025-3-29 07:46 作者: 極端的正確性 時間: 2025-3-29 15:14 作者: Wernickes-area 時間: 2025-3-29 15:52 作者: 駕駛 時間: 2025-3-29 20:30 作者: 錫箔紙 時間: 2025-3-30 01:47 作者: Acumen 時間: 2025-3-30 06:50 作者: 易達(dá)到 時間: 2025-3-30 09:14
Impurity Bands,y band are first described. Then, in connection with the analysis of impurity conduction, in particular the metal-insulator transition in doped semiconductors, the historical development of localization theory from the paper by Anderson in 1958 entitled “Absence of Diffusion in Certain Random Lattic作者: 興奮過度 時間: 2025-3-30 14:52
Special Semiconducting Materials,These include narrow-gap semiconductors (Section 9.1) and magnetic semiconductors (Section 9.2). We then proceed to discuss in Section 9.3 semimagnetic semiconductors, namely semiconductors containing paramagnetic impurities, and in Section 9.4 half-metallic ferromagnets, which are metallic for spin作者: Yag-Capsulotomy 時間: 2025-3-30 17:01
The Electronic Structure of Surfaces and Interfaces,riance is broken. This prevents us applying Bloch’s theorem, although Flochet’s theorem enters the picture: solutions forbidden by the infinite crystal can now be allowed . the finite crystal. This introduces . states, surface states, which may be important in some specific cases. Semiconductors are作者: 珍奇 時間: 2025-3-31 00:10 作者: SYN 時間: 2025-3-31 03:51
Basic Properties in Semiconductor Devices,ant position of silicon as a semiconducting material in present-day devices, most of the phenomena discussed here relate to effects occurring in silicon devices. However, attention will also be paid to other materials, such as III–V compounds, which are especially important for semiconductor optical作者: AWE 時間: 2025-3-31 08:44 作者: 心胸狹窄 時間: 2025-3-31 09:18
Preparation and Applications of Amorphous Silicon,decomposition of silane. There were a number of important fundamental developments during the 1970s that established the considerable applied potential of this material and led to the present rapid growth in its use in commercial products. The first of these was the discovery,. as early as 1972, tha作者: heartburn 時間: 2025-3-31 16:58
Daniel Stedman Jones,Ben Jacksonctor interface, which is used to fabricate ohmic contacts and Schottky-barrier diodes. Semiconductor devices are fabricated by combinations of such interfaces. The simple planar transistor consists, for example, of a sequence of metal/p-semiconductor/n-semiconductor/p-semiconductor/metal layers of r作者: CERE 時間: 2025-3-31 19:21
