標(biāo)題: Titlebook: Crucial Issues in Semiconductor Materials and Processing Technologies; S. Coffa,F. Priolo,J. M. Poate Book 1992 Springer Science+Business [打印本頁(yè)] 作者: 我要黑暗 時(shí)間: 2025-3-21 18:52
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies影響因子(影響力)
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies影響因子(影響力)學(xué)科排名
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書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies被引頻次
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies被引頻次學(xué)科排名
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書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies年度引用學(xué)科排名
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies讀者反饋
書目名稱Crucial Issues in Semiconductor Materials and Processing Technologies讀者反饋學(xué)科排名
作者: 身體萌芽 時(shí)間: 2025-3-21 20:48
Optoelectronic Materialsd to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectronic devices and detail those related to telecommunication applications, especially the InGaAsP and InGaAlAs quaternary systems.作者: licence 時(shí)間: 2025-3-22 03:51
Electrical Characteristics of PECVD Silicon Nitride / Compound Semiconductor Interfaces for Optoelecrmal annealing in nitrogen were also shown. The experimental data can be interpreted in terms of the contributions of insulator-related structural defects and semiconductor-related defects induced by the plasma deposition process on the crystal surface.作者: 人造 時(shí)間: 2025-3-22 06:04
Fundamentals of Semiconductor Processing defining the ultimate limits in feature size, compositional and structural heterogeneity, and device performance. Particular emphasis is given to silicon technology which dominates both the science and economics of the electronics industry.作者: Conclave 時(shí)間: 2025-3-22 10:27 作者: 長(zhǎng)處 時(shí)間: 2025-3-22 15:37 作者: 長(zhǎng)處 時(shí)間: 2025-3-22 19:25
Paul Humphries,Alison J. King,John D. Koehnamination. The nature of those defects, their electrical effects, their formation mechanisms and precautions for their prevention are discussed. Analytical methods for the characterization and monitoring of crystal defects and metal contamination are described.作者: harmony 時(shí)間: 2025-3-23 00:16
Fourier and Fourier-Mehler Transforms, has been considered for two new applications : i) Formation of ultra-shallow junctions in silicon using selectively deposited and implanted polycrystalline Si.Ge. as a diffusion source, ii) Formation of MOS gate structures with Si.Ge. gate electrodes for lower dopant activation temperatures and better threshold control.作者: 金絲雀 時(shí)間: 2025-3-23 02:37
Defect Aspects of Advanced Device Technologiesamination. The nature of those defects, their electrical effects, their formation mechanisms and precautions for their prevention are discussed. Analytical methods for the characterization and monitoring of crystal defects and metal contamination are described.作者: Excise 時(shí)間: 2025-3-23 07:38 作者: 臨時(shí)抱佛腳 時(shí)間: 2025-3-23 13:16
0168-132X integrated circuits is increasing considerably because ofthe continuous dimensional shrinkage to improve efficiency andfunctionality. This evolution in design rules poses real challengesfor the materials scientists and processing engineers. Materials,defects and processing now have to be understood 作者: 鋸齒狀 時(shí)間: 2025-3-23 17:03
d to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectronic devices and detail those related to telecommunication applications, especially the InGaAsP and InGaAlAs quaternary systems.作者: Tracheotomy 時(shí)間: 2025-3-23 21:53
rmal annealing in nitrogen were also shown. The experimental data can be interpreted in terms of the contributions of insulator-related structural defects and semiconductor-related defects induced by the plasma deposition process on the crystal surface.作者: covert 時(shí)間: 2025-3-24 00:37 作者: ingenue 時(shí)間: 2025-3-24 03:33
Anchors, Spars and Intermediate Supports,l oxygen in the epitaxial layer, clearly indicating that solid state outdiffusion from the substrate occurs during film preparation. Furthermore the major consequence of outdiffusion, e.g. oxygen contamination of the epitaxial layer has been shown to produce precipitation phenomena inside the film, directly influencing its quality.作者: Ascendancy 時(shí)間: 2025-3-24 07:37 作者: heirloom 時(shí)間: 2025-3-24 11:39 作者: 向前變橢圓 時(shí)間: 2025-3-24 16:26 作者: 或者發(fā)神韻 時(shí)間: 2025-3-24 19:51 作者: Debility 時(shí)間: 2025-3-25 02:32
Applications to Quantum Field Theory, revolution in the properties attainable in devices fabricated using these new growth techniques. This paper will present several key advances in materials preparation, and the application of this work.作者: 非秘密 時(shí)間: 2025-3-25 07:02
Fourier and Fourier-Mehler Transforms,cale integration (ULSI) technologies. Depositions were performed in a lamp heated cold-wall rapid thermal processor (rapid thermal chemical vapor deposition -RTCVD) using thermal decomposition of GeH. and SiH.Cl. in a carrier gas of H.. The process is a relatively low temperature/high throughput pro作者: somnambulism 時(shí)間: 2025-3-25 10:31 作者: ALIEN 時(shí)間: 2025-3-25 12:58
ls. Since the ternary and quaternary alloys play a major part in the topic, we focus on specific issues, especially in terms of thermodynamics, related to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectr作者: 大笑 時(shí)間: 2025-3-25 16:44 作者: 蒼白 時(shí)間: 2025-3-25 23:52
Main, Haul-Back and Hoist Lines,s of performance has produced encounters with some fundamental limits of materials processing. This paper examines the role of materials processing in defining the ultimate limits in feature size, compositional and structural heterogeneity, and device performance. Particular emphasis is given to sil作者: 胖人手藝好 時(shí)間: 2025-3-26 01:06 作者: ironic 時(shí)間: 2025-3-26 04:59
The History of Rope Transportation, (DLTS) and current-voltage (IV) measurements. For both undecorated and Fe-decorated stacking faults similar deep level spectra were found with a dominant level at Ev+0.5 eV. For diodes with decorated stacking faults the IV-measurements reveal a drastic enhancement of the reverse current which corre作者: induct 時(shí)間: 2025-3-26 08:51
Scaling for Convective Boundary Layers gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.作者: 禁止,切斷 時(shí)間: 2025-3-26 15:45 作者: 無瑕疵 時(shí)間: 2025-3-26 17:20 作者: 離開 時(shí)間: 2025-3-26 21:58 作者: 縮短 時(shí)間: 2025-3-27 02:33
978-94-010-5203-0Springer Science+Business Media Dordrecht 1992作者: 珠寶 時(shí)間: 2025-3-27 06:01 作者: 法官 時(shí)間: 2025-3-27 09:55 作者: A保存的 時(shí)間: 2025-3-27 17:14
nce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.作者: Chronic 時(shí)間: 2025-3-27 20:04
The History of Rope Transportation, (DLTS) and current-voltage (IV) measurements. For both undecorated and Fe-decorated stacking faults similar deep level spectra were found with a dominant level at Ev+0.5 eV. For diodes with decorated stacking faults the IV-measurements reveal a drastic enhancement of the reverse current which correlates with the Fe concentration.作者: FLOAT 時(shí)間: 2025-3-28 00:07
Scaling for Convective Boundary Layers gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.作者: GULLY 時(shí)間: 2025-3-28 03:19 作者: Antimicrobial 時(shí)間: 2025-3-28 07:12
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersnce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.作者: 打包 時(shí)間: 2025-3-28 11:58 作者: Prognosis 時(shí)間: 2025-3-28 18:27
M?ssbauer Study of the Dx-Center in Te-Implanted AlxGa1-xAs gradient. This defect configuration shows persistent photoionisation and it is associated with the so-called “DX-center”. The time constant of the relaxation from the substitutional donor-site to the DX-center defect site is measured.作者: 六邊形 時(shí)間: 2025-3-28 22:35
Fourier and Fourier-Mehler Transforms,In the present paper are shown the characteristics of devices successfully employing PECVD a-SiO. as gate dielectric. Field effect analysys on these devices were performed making use of two different methods whose equivalence has been proven.作者: 放大 時(shí)間: 2025-3-28 22:54
Applications to Quantum Field Theory,Silicon deposits are made on different substrates by injecting silicon powder in a plasma torch (Ar+H.). The self-supported deposits are then subjected to recrystallization by zone melting to improve their grain size and some electronic properties.作者: 羅盤 時(shí)間: 2025-3-29 03:14 作者: BOLT 時(shí)間: 2025-3-29 11:10
N. Isyumov,S. Helliwell,S. Rosen,D. LaiAfter twenty years of surface science one may ask the question: what impact is there on semiconductor processing today? The answer is given by looking at developments in the equipment industry.作者: faddish 時(shí)間: 2025-3-29 12:26 作者: inventory 時(shí)間: 2025-3-29 16:21 作者: 摘要記錄 時(shí)間: 2025-3-29 22:24
On the Dirty Contacts on N-Type SiliconElectrical contacts (sometimes referred to as dirty contacts) realized on n-type Si at room temperature and their effects on the rectifying characteristics of Au/Si Schottky diodes have been analyzed.作者: 銀版照相 時(shí)間: 2025-3-30 00:15 作者: oblique 時(shí)間: 2025-3-30 07:24
Defect Aspects of Advanced Device Technologiesrocess-induced defect formation from the very beginning of the development of new device generations to achieve economic yields and adequate device reliability lateron in mass production. Here, we focus on detrimental defects in electrically acitve regions of the silicon substrate (”crystal defects”作者: DAMN 時(shí)間: 2025-3-30 11:12
Silicon and Silicon:Germanium Alloy Growth; Means and Applications revolution in the properties attainable in devices fabricated using these new growth techniques. This paper will present several key advances in materials preparation, and the application of this work.作者: HPA533 時(shí)間: 2025-3-30 13:32 作者: arrhythmic 時(shí)間: 2025-3-30 19:25
Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersnce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.作者: 投票 時(shí)間: 2025-3-30 21:42
Optoelectronic Materialsls. Since the ternary and quaternary alloys play a major part in the topic, we focus on specific issues, especially in terms of thermodynamics, related to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectr
