標(biāo)題: Titlebook: Contemporary Trends in Semiconductor Devices; Theory, Experiment a Rupam Goswami,Rajesh Saha Book 2022 The Editor(s) (if applicable) and Th [打印本頁] 作者: 使入伍 時間: 2025-3-21 17:56
書目名稱Contemporary Trends in Semiconductor Devices影響因子(影響力)
書目名稱Contemporary Trends in Semiconductor Devices影響因子(影響力)學(xué)科排名
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書目名稱Contemporary Trends in Semiconductor Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Contemporary Trends in Semiconductor Devices被引頻次
書目名稱Contemporary Trends in Semiconductor Devices被引頻次學(xué)科排名
書目名稱Contemporary Trends in Semiconductor Devices年度引用
書目名稱Contemporary Trends in Semiconductor Devices年度引用學(xué)科排名
書目名稱Contemporary Trends in Semiconductor Devices讀者反饋
書目名稱Contemporary Trends in Semiconductor Devices讀者反饋學(xué)科排名
作者: bourgeois 時間: 2025-3-22 00:03 作者: 仔細(xì)檢查 時間: 2025-3-22 00:28
Lateral Straggle Parameter and Its Impact on Hetero-Stacked Source Tunnel FETf tunnel FET significantly. Using Technology Computer Aided Design (TCAD) simulations, detailed examination on the impact of variations in lateral straggling parameters (.) for a hetero-stacked source tunnel FET (HSS-TFET) is carried out. The chapter focuses on the investigation of Analog/RF figure 作者: 侵略 時間: 2025-3-22 08:36
Fabrication of ZnO and ZnO Heterostructures for Gas-Sensing Applicationsost active metal oxide sensing platform could be a suitable option to design microheater to achieve the required temperature with minimum power dissipation. Using nanocrystalline ZnO or its ZnO heterosructures as a sensing layer may successfully lower the operational temperature less than 300?°C pro作者: 規(guī)范就好 時間: 2025-3-22 09:21 作者: FLIT 時間: 2025-3-22 15:08
Voltage-Programmed Pixel Circuit Design for AMOLED Displayswever, before the product goes to the market, the performance, yield, and lifetime of pixel circuits in particular or displays in general need to be substantially increased. Therefore, as a circuit designer, it becomes crucial to address the challenging issues of threshold voltage shift over time fo作者: FLIT 時間: 2025-3-22 19:44 作者: acquisition 時間: 2025-3-22 22:07
SELBOX TFET and DTD TFET for DC and RF/Analog Applications which is defined as kink effect. The release of cumulated holes by using a small buried oxide gap in the SELBOX device and L-patterned trench in the DTD TFET attenuates kink. The DTD device becomes more economic and reliable due to its small device area compared to body contact-based devices. The s作者: anaphylaxis 時間: 2025-3-23 05:11
1876-1100 ditionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices..978-981-16-9126-3978-981-16-9124-9Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: 專橫 時間: 2025-3-23 09:14
Roger W. Hendrix,John E. Johnsonnd DIBL, thus maintaining electrostatic integrity. For .?=?25?nm, the maximum ././././. at .?=?0.45?V is 0.00155 μS/4.268 fF/0.277 fF/102.09?GHz/177.57?GHz, respectively. The device works well with stress/strain/velocity saturation effects too. Various noise (diffusion/generation-recombination/flick作者: Commodious 時間: 2025-3-23 11:19
Dennis T. Brown,Raquel Hernandezso discussed in detail. Furthermore, the challenges currently faced by researchers in developing Flexible DSSCs (FDSSCs) are also addressed. Therefore, the main objective of this book chapter is to discuss the different materials and synthesis techniques for developing a novel photoanode layer. Anot作者: Epidural-Space 時間: 2025-3-23 15:16
https://doi.org/10.1007/978-1-4614-1120-8f tunnel FET significantly. Using Technology Computer Aided Design (TCAD) simulations, detailed examination on the impact of variations in lateral straggling parameters (.) for a hetero-stacked source tunnel FET (HSS-TFET) is carried out. The chapter focuses on the investigation of Analog/RF figure 作者: Cuisine 時間: 2025-3-23 21:36 作者: 索賠 時間: 2025-3-23 22:35
https://doi.org/10.1007/978-1-4614-1281-6 three times the Debye length. An electro-mechanical system has been developed which can place the reference electrode in the desired position with an accuracy of 0.126?μm. The chapter presents the experimental results to support the theory associated with the optimal positioning of the reference el作者: Modify 時間: 2025-3-24 05:00 作者: malapropism 時間: 2025-3-24 07:25 作者: 向外 時間: 2025-3-24 12:11
https://doi.org/10.1007/978-1-4614-1281-6 which is defined as kink effect. The release of cumulated holes by using a small buried oxide gap in the SELBOX device and L-patterned trench in the DTD TFET attenuates kink. The DTD device becomes more economic and reliable due to its small device area compared to body contact-based devices. The s作者: 樹木中 時間: 2025-3-24 17:42 作者: 有說服力 時間: 2025-3-24 22:03
Lecture Notes in Electrical Engineeringhttp://image.papertrans.cn/c/image/236758.jpg作者: Entirety 時間: 2025-3-25 01:54
Contemporary Trends in Semiconductor Devices978-981-16-9124-9Series ISSN 1876-1100 Series E-ISSN 1876-1119 作者: 伸展 時間: 2025-3-25 04:14
Energy Efficient Semi-Serial Interconnect,in research and development. The world of semiconductors has progressed immensely with the evolution of novel materials and device architectures. The International Roadmap for Devices and Systems (IRDS), formerly known as International Technology Roadmap for Semiconductors (ITRS), has been instrumen作者: set598 時間: 2025-3-25 08:09
Roger W. Hendrix,John E. Johnsonle FinFET and VSTB FET performance are also compared in terms of their performance. The proposed doping outline 3 (DO.) decreases off-state leakage current (.) by 99.4% over DO.. The gate overlap used on source/drain of 15?nm (OL.) improves on/off current ratio (.) and subthreshold swing (SS) over .作者: DEFT 時間: 2025-3-25 11:49
Zacariah L. Hildenbrand,Ricardo A. Bernalemperature. When a ferroelectric material is stacked with the gate oxide of a Tunnel FET, band-to-band tunneling mechanism of the Tunnel FET along with negative capacitance of the ferroelectric material ensure a subthreshold swing below the Boltzmann limit of 60?mV/dec. The analysis of noise is pivo作者: geriatrician 時間: 2025-3-25 16:23
Principles of Virus Structural Organization,hat is a prominent reason of rising greenhouse effect. Therefore, different solar cells are gaining importance among which, one specific the organic photovoltaic cells are gaining interest as they are environment friendly as well as economical for both developed and developing world. Although organi作者: Climate 時間: 2025-3-25 23:30 作者: Mortal 時間: 2025-3-26 01:41
Petr G. Leiman,Mikhail M. Shneidergh efficiency and low-cost solar cell. Kesterite materials have attractive optical parameters, high absorption coefficients, and symmetrical structure with adjustable bandgap of 1.0–1.5?eV. In practice, any kesterite material possesses high density of different defects, traps, and interface defects 作者: 字形刻痕 時間: 2025-3-26 06:35
https://doi.org/10.1007/978-1-4614-0986-1 as sensitizing materials in the devices that help absorb a broader solar spectrum region during its working. This chapter will briefly explain the evolution of single crystal solar cells evolution to nano-material-based solar cells. The general fabrication techniques and characterization parameters作者: alcohol-abuse 時間: 2025-3-26 10:27 作者: gregarious 時間: 2025-3-26 13:23
https://doi.org/10.1007/978-1-4614-1120-8s been discussed on the improvement of sensitivity of gas sensors based on both nanostructured materials and composites. This is the motivation to fabricate highly sensitive gas sensors. The discussion of this chapter is motivated toward the physical property which is depending on the crystal shape,作者: Institution 時間: 2025-3-26 17:55 作者: 小木槌 時間: 2025-3-26 21:59
https://doi.org/10.1007/978-1-4614-1281-6to a great extent. Therefore, researchers have been investigating the use of different materials other than traditional materials to fabricate superior high-speed VLSI interconnects. In this review book chapter, a comparative study is carried out on the different interconnect materials. Analysis of 作者: 催眠 時間: 2025-3-27 01:43 作者: Multiple 時間: 2025-3-27 05:50 作者: CRASS 時間: 2025-3-27 12:23 作者: 有惡意 時間: 2025-3-27 15:22
https://doi.org/10.1007/978-981-16-9124-9Field Effect Transistors; Solar Cells; VLSI; Opto-Electro-Mechanical Devices; Sensor; Simulation; Modeling作者: 硬化 時間: 2025-3-27 19:55
978-981-16-9126-3The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapor作者: Spirometry 時間: 2025-3-28 00:50
1876-1100 of models for CNT interconnects in VLSI.Discusses voltage pThis book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro me作者: 教唆 時間: 2025-3-28 04:11
Principles of Virus Structural Organization,, and less strength as compared to silicon solar cells. However, utilization of conjugated polymers (CP) in the active layer of the photovoltaic device can lead to improvement in the organic photovoltaic efficiency.作者: 厭食癥 時間: 2025-3-28 07:25 作者: 偽善 時間: 2025-3-28 12:08 作者: dura-mater 時間: 2025-3-28 15:37 作者: Corral 時間: 2025-3-28 22:32
Theory of Nanostructured Kesterite Solar Celltraps as centres for recombination. The performance metrics of the solar cell are well explored and analysed with different types of recombination centres. Finally, the current–voltage characteristics and efficiency of the solar cell are demonstrated, which may give a clear visualization of low-cost next generation thin film solar cells.作者: legitimate 時間: 2025-3-29 01:00
Nano-Material Based Sensitized Solar Cellsical details, focusing more on the technology’s practical aspects. The modern techniques adapted by researchers to further enhance solar cells’ efficient working, utilizing nanotechnology, have been discussed in the chapter. The technological limitations faced by photovoltaic researchers have also been discussed.作者: Accommodation 時間: 2025-3-29 06:54 作者: 專心 時間: 2025-3-29 11:07 作者: 激勵 時間: 2025-3-29 12:52 作者: acheon 時間: 2025-3-29 16:33
Introduction,ems. From metal oxide semiconductor field effect transistors (MOSFETs), and FinFETs to interconnects and solar cells, this book picks up some of the thrust areas in the light of its title and arranges them for better readability by researchers and individuals interested in the domain of semiconductor devices.作者: Proclaim 時間: 2025-3-29 21:20 作者: 陶瓷 時間: 2025-3-30 01:29
https://doi.org/10.1007/978-1-4614-1281-6recent progress in materials with emphasis on composite materials for high-speed VLSI interconnects has been done. Book chapters published in the last 10?years have been reviewed and some earlier book chapters that played an important role in shaping the field of interconnects are included.作者: ensemble 時間: 2025-3-30 06:52
High Speed Interconnects Made of Composite Materials for VLSI Applicationrecent progress in materials with emphasis on composite materials for high-speed VLSI interconnects has been done. Book chapters published in the last 10?years have been reviewed and some earlier book chapters that played an important role in shaping the field of interconnects are included.作者: Coronation 時間: 2025-3-30 10:09
Book 2022hin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in作者: 六個才偏離 時間: 2025-3-30 12:44 作者: Genteel 時間: 2025-3-30 16:42
A Brief Insight into the Vertical Super-Thin Body (VSTB) MOSFETle FinFET and VSTB FET performance are also compared in terms of their performance. The proposed doping outline 3 (DO.) decreases off-state leakage current (.) by 99.4% over DO.. The gate overlap used on source/drain of 15?nm (OL.) improves on/off current ratio (.) and subthreshold swing (SS) over .作者: BROOK 時間: 2025-3-30 22:03
Effect of Noise and Temperature on the Performance of Ferro-Tunnel FETemperature. When a ferroelectric material is stacked with the gate oxide of a Tunnel FET, band-to-band tunneling mechanism of the Tunnel FET along with negative capacitance of the ferroelectric material ensure a subthreshold swing below the Boltzmann limit of 60?mV/dec. The analysis of noise is pivo
