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標(biāo)題: Titlebook: Confined Electrons and Photons; New Physics and Appl Elias Burstein,Claude Weisbuch Book 1995 Plenum Press, New York 1995 Laser.Planar.Vaku [打印本頁(yè)]

作者: FLAW    時(shí)間: 2025-3-21 18:15
書(shū)目名稱Confined Electrons and Photons影響因子(影響力)




書(shū)目名稱Confined Electrons and Photons影響因子(影響力)學(xué)科排名




書(shū)目名稱Confined Electrons and Photons網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Confined Electrons and Photons網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Confined Electrons and Photons被引頻次




書(shū)目名稱Confined Electrons and Photons被引頻次學(xué)科排名




書(shū)目名稱Confined Electrons and Photons年度引用




書(shū)目名稱Confined Electrons and Photons年度引用學(xué)科排名




書(shū)目名稱Confined Electrons and Photons讀者反饋




書(shū)目名稱Confined Electrons and Photons讀者反饋學(xué)科排名





作者: geriatrician    時(shí)間: 2025-3-21 22:36

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Sabine Büttner,Uwe Handmann,Wolfgang Irrekment —along one or more directions— of different elementary excitations. One is then interested in knowing the effects of confinement on their energy spectrum, and also on their interaction with other excitations and with external electromagnetic fields.
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Spontaneous Emission Control in Semiconductor MicrocavitiesAlbert Einstein was the first to realize that stimulated emission and spontaneous emission goes hand in hand. In his famous 1917 paper ., he showed that his . and . coefficients are intimately coupled.
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https://doi.org/10.1007/978-1-4615-1963-8Laser; Planar; Vakuuminjektionsverfahren; Wave; basics; electrodynamics; electronics; optics; quantum dot; se
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978-1-4613-5807-7Plenum Press, New York 1995
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Stefan Opitz,Linda Dierke,Jana R?digerntization occuring when semiconductor heterostructures are progressively structured in 1, 2, 3 directions (quantum wells, wires or boxes respectively), the other is the . mode control obtained by structuring the dielectric function of a material system, leading to optical microcavity or photonic ban
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Sabine Büttner,Uwe Handmann,Wolfgang Irrekem represents a many-body problem of great complexity. In weakly-correlated systems like the usual semiconductors, a good starting point is provided by the one-particle picture, in which the crystal eigenstates are approximated by Slater determinants where the electrons occupy the one-particle eigen
作者: 小故事    時(shí)間: 2025-3-23 18:38
Sabine Büttner,Uwe Handmann,Wolfgang Irrekm wells and superlattices. Such structures are simply viewed as a sequence of different semiconductor layers grown sucessively along a well defined crystalline growth direction. The carriers’ motion along this growth direction (hereafter called the z direction) is then strongly modified by the prese
作者: alleviate    時(shí)間: 2025-3-24 00:48
Sabine Büttner,Uwe Handmann,Wolfgang Irrekment —along one or more directions— of different elementary excitations. One is then interested in knowing the effects of confinement on their energy spectrum, and also on their interaction with other excitations and with external electromagnetic fields.
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https://doi.org/10.1007/978-3-663-11652-3cal motion (geometrical optics), as well as on the level of quantum mechanical motion (wave optics). The last two decades have witnessed a surge of interest in transport phenomena in low-dimensional semiconductor systems. Examples are the study of weak localization and conductance fluctuations in tw
作者: 誤傳    時(shí)間: 2025-3-24 21:59
Kazimiera Prunskien?,Elmar Altvaterare and study systems with further reduced dimensionality, specifically quantum wires and quantum dots. In these systems, the original free dispersions of the electrons in the lateral directions are also quantized due to an additional lateral confinement. One ultimate limit is a quantum dot, where,
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Neeraj Kumar Negi,Molly Watts Sohnquantum optics, chemistry and engineering .. Electromagnetism is the fundamental mediator of interactions in condensed matter and atomic physics. Photonic bandgap materials constitute a fundamentally new class of dielectric materials in which this basic interaction is controllably altered, and in so
作者: 燦爛    時(shí)間: 2025-3-26 06:35
Sustainable Development Goals Seriesal wavelength) whose distinguishing feature is a very large modulation depth of refractive index. When appropriately designed, these “photonic crystals” exhibit ranges of optical frequency where light cannot exist — the photonic band gaps .. The current interest in these materials . has led us to re
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Phonons and Electron-Phonon Interaction in Low-Dimensional Structuresment —along one or more directions— of different elementary excitations. One is then interested in knowing the effects of confinement on their energy spectrum, and also on their interaction with other excitations and with external electromagnetic fields.
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Electron States in Biased Heterostructuresnteraction) to form the DQW eigenstates. The resulting new states are delocalized over the DQW region. For example, two identical wells (same thickness and material composition) give rise to symmetrical and antisymmetrical z-dependent DQW wavefunctions (with respect to the center of the central barr
作者: 遺棄    時(shí)間: 2025-3-27 03:05
Excitonic Radiative Dynamics in Semiconductor Quantum Wells experiments, there is a broad population of carriers present making the interpretation of the data difficult, since many different exciton states ultimately contribute to the luminescence signal. More recently, coherent optical spectroscopies have been employed to study excitonic radiative dynamics
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Controlling Spontaneous Emission and Optical Microcavities lasers. We will see that the essential point for realizing ultralow power consumption light emitting devices are very simple, simultaneously, there are some practical problems to be solved for high performance devices.
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Photonic Bloch Waves and Photonic Band Gapserence with, respectively, the vacuum wavevector and . times the optical frequency. With the exception of the multi-layer dielectric stack, most conventional electromagnetic gratings, such as those encountered in holography ., waveguides ., distributed feedback lasers ., acousto-optic . and x-ray .
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0258-1221 rn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamenta978-1-4613-5807-7978-1-4615-1963-8Series ISSN 0258-1221
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Sabine Büttner,Uwe Handmann,Wolfgang Irreknteraction) to form the DQW eigenstates. The resulting new states are delocalized over the DQW region. For example, two identical wells (same thickness and material composition) give rise to symmetrical and antisymmetrical z-dependent DQW wavefunctions (with respect to the center of the central barr
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https://doi.org/10.1007/978-3-658-39412-7properties of the IQWS is well-established and they are used in nonlinear optics and device applications.. However, modern electronic devices are now nearly exclusively based on inorganic materials. In spite of the fast responses of organics, the optical nonlinearity figures of merit in the current
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Wirtschaftswissenschaftliche Beitr?ge, supersteps., faceted high index surfaces .) or artificially patterned substrates (V-grooves ., masked surfaces for selective localized growth ., sidewalls of a cleaved heterostructure .). For QBs, the single convincing technique reported until now is localized growth on SiO. masked GaAs surfaces .
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Neeraj Kumar Negi,Molly Watts Sohnstics of the dielectric host also has applications in photochemistry and catalysis of chemical reactions. The potential significance of this subject may be compared to that of semiconductor physics. Photonic bandgap materials are the photonic analogues of semiconductors in the electronics industry.
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Sustainable Development Goals Serieserence with, respectively, the vacuum wavevector and . times the optical frequency. With the exception of the multi-layer dielectric stack, most conventional electromagnetic gratings, such as those encountered in holography ., waveguides ., distributed feedback lasers ., acousto-optic . and x-ray .
作者: 易于    時(shí)間: 2025-3-29 22:38
Book 1995assed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamenta
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Electron States in Biased Heterostructuresm wells and superlattices. Such structures are simply viewed as a sequence of different semiconductor layers grown sucessively along a well defined crystalline growth direction. The carriers’ motion along this growth direction (hereafter called the z direction) is then strongly modified by the prese
作者: Expediency    時(shí)間: 2025-3-30 18:13

作者: 重畫(huà)只能放棄    時(shí)間: 2025-3-30 22:18
Excitonic Radiative Dynamics in Semiconductor Quantum WellsThese technologies are widely exploited in devices. The performance of optoelectronic devices is determined in part by the temporal constraints on the fundamental emission process. For example, in emitters, if the emission time is very long, there will be more opportunity for the carriers to be capt
作者: grovel    時(shí)間: 2025-3-31 03:24
Superlattices and Quantum Wells in Organic Semiconductors: Excitons and Optical Nonlinearitiesallowed one to control growth on the scale of a single atomic layer. This made it possible to produce high quality quantum wells that confine the motion of electrons in one dimension. The confinement quantizes the electron energy and increases the binding energy of excitons, resulting, in contrast t
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Intersubband Transitions in Quantum Wells ago .. When dealing with interband optical transitions, additional features related to electron-hole interactions (see for instance exciton descriptions in this book) are coming into play and the one-electron wavefunctions and energy levels may fail to describe or predict experimental results. More
作者: 樣式    時(shí)間: 2025-3-31 10:34
Principles of Solid State Electron Opticscal motion (geometrical optics), as well as on the level of quantum mechanical motion (wave optics). The last two decades have witnessed a surge of interest in transport phenomena in low-dimensional semiconductor systems. Examples are the study of weak localization and conductance fluctuations in tw
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