標(biāo)題: Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,Daeje Chin Book 1988Latest edition Kluwer Academic Publishers [打印本頁] 作者: interminable 時間: 2025-3-21 17:38
書目名稱Computer-Aided Design and VLSI Device Development影響因子(影響力)
書目名稱Computer-Aided Design and VLSI Device Development影響因子(影響力)學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development網(wǎng)絡(luò)公開度
書目名稱Computer-Aided Design and VLSI Device Development網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development被引頻次
書目名稱Computer-Aided Design and VLSI Device Development被引頻次學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development年度引用
書目名稱Computer-Aided Design and VLSI Device Development年度引用學(xué)科排名
書目名稱Computer-Aided Design and VLSI Device Development讀者反饋
書目名稱Computer-Aided Design and VLSI Device Development讀者反饋學(xué)科排名
作者: SAGE 時間: 2025-3-22 00:13 作者: APRON 時間: 2025-3-22 02:16
The Evolution of Complex Hunter-Gatherersfield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD device are presented in detail.作者: 同謀 時間: 2025-3-22 07:38 作者: ethnology 時間: 2025-3-22 09:40
A Study of LDD Device Structure Using 2-D Simulationsfield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD device are presented in detail.作者: discord 時間: 2025-3-22 14:15
Emergence, Complexity and Computation can be seen. Device width will not be scaled, the current drive capability will be expressed for a fixed width. Breakdown and punchthrough voltages must be sufficiently greater than the supply voltage so that reliability is not a problem. For this example, power density is not a limitation.作者: discord 時間: 2025-3-22 17:59 作者: accordance 時間: 2025-3-23 00:25
The Evolution of Communitarian Ideasmplexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.作者: 自戀 時間: 2025-3-23 04:09
Overviewmplexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.作者: evanescent 時間: 2025-3-23 08:53 作者: Cumulus 時間: 2025-3-23 13:09 作者: creatine-kinase 時間: 2025-3-23 16:50 作者: Constant 時間: 2025-3-23 20:23 作者: 毛細血管 時間: 2025-3-23 22:39
Individual CRPS Case Management, 2 .m or less, narrow width effects become a major issue [11.2]–[11.5]. These effects are dependent on the isolation structures since the channel width of the device is defined by the field isolation. Many novel isolation structures have been investigated for applications in VLSI [11.6]–[11.14].作者: APO 時間: 2025-3-24 05:10
Book 1988Latest editionnly briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has r作者: 愉快么 時間: 2025-3-24 07:31
Process Simulationechnologies. When coupled with a device analysis program, a process simulator has proven to be a powerful design tool because the process sensitivity to device parameters can be easily extracted by simple changes made to processing conditions in computer inputs [2.1].作者: 善于騙人 時間: 2025-3-24 11:49 作者: 使成整體 時間: 2025-3-24 18:07 作者: Aggressive 時間: 2025-3-24 21:39 作者: 斜 時間: 2025-3-25 03:07
Development of Isolation Structures for Applications in VLSI 2 .m or less, narrow width effects become a major issue [11.2]–[11.5]. These effects are dependent on the isolation structures since the channel width of the device is defined by the field isolation. Many novel isolation structures have been investigated for applications in VLSI [11.6]–[11.14].作者: 無節(jié)奏 時間: 2025-3-25 03:20 作者: Mammal 時間: 2025-3-25 09:17 作者: DNR215 時間: 2025-3-25 14:40 作者: 顯微鏡 時間: 2025-3-25 17:09
The Evolution of Communitarian Idease such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t作者: BRAND 時間: 2025-3-25 22:59 作者: HERTZ 時間: 2025-3-26 02:30
The Evolution of Communitarian Ideascuit performance [4.1],[4.2]. The interconnect lines not only act as loads for their drivers but also become a source of noise because the lines are capacitively coupled when they are close to each other. Also, because we scale down the widths of the lines while the lengths of the lines are generall作者: 聯(lián)想記憶 時間: 2025-3-26 06:09
https://doi.org/10.1007/978-3-030-26558-8 Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in dev作者: insecticide 時間: 2025-3-26 09:29
The Roots of Communitarian Ideas,ased process models that are currently available and suitable for computer simulation. Innumerable research hours have gone into the development of the various models and fitting parameters. However a silicon process, whether it is bipolar, NMOS, or CMOS, is an extremely complicated entity. There ar作者: 親愛 時間: 2025-3-26 13:46 作者: 消息靈通 時間: 2025-3-26 19:28
The Giant: International Paper 1898–2000in short channel devices as the drain to source voltage is increased. Fig. 8.1 shows the measurement of the drain to source current of a short channel MOSFET’s, as a function of the drain bias, for gate bias of 0 V. Note that the current increases exponentially with drain bias. Fig. 8.2 shows the si作者: Spartan 時間: 2025-3-26 23:18
The Evolution of Complex Hunter-Gatherers illustrate the usefulness and necessity of using computer-aided design tools in the fabrication of VLSI devices. First, the problem of high electric field in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. F作者: Extricate 時間: 2025-3-27 02:45 作者: 高射炮 時間: 2025-3-27 07:32
Individual CRPS Case Management,s is reduced significantly. Island width/space design rules are becoming very aggressive, in the range of 1 .m/1 .m [11.1]. This means that the width of the isolation structures has to be scalable without causing field leakage problems. Also, as the transistor widths are scaled down, to the range of作者: 不能平靜 時間: 2025-3-27 12:43 作者: 遵循的規(guī)范 時間: 2025-3-27 13:42 作者: glucagon 時間: 2025-3-27 21:02 作者: 腫塊 時間: 2025-3-27 21:59 作者: Ruptured-Disk 時間: 2025-3-28 03:15
Methodology in Computer-Aided Design for Process and Device Development Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in device designs.作者: grotto 時間: 2025-3-28 08:59
Transistor Design for Submicron CMOS Technologynology will first be discussed. Then the concerns for the design of n- and p-channel MOSFET’s with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.作者: 格言 時間: 2025-3-28 13:07 作者: LINE 時間: 2025-3-28 18:37 作者: 食物 時間: 2025-3-28 19:26 作者: 下垂 時間: 2025-3-29 01:29 作者: RECUR 時間: 2025-3-29 03:45
https://doi.org/10.1007/978-3-030-26558-8 Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in device designs.作者: conservative 時間: 2025-3-29 10:06 作者: 典型 時間: 2025-3-29 14:50 作者: palliate 時間: 2025-3-29 15:52 作者: mendacity 時間: 2025-3-29 22:50 作者: 包庇 時間: 2025-3-30 01:24
Social Inequality and Demography,r transistor gain will be reduced, thereby increasing the latchup initiating current. In a p-well process, the reduction of latchup sensitivity is achieved from reduction of the lateral parasitic p-n-p current gain.作者: 灰姑娘 時間: 2025-3-30 06:11
https://doi.org/10.1007/978-3-030-40730-8overlap of the gate to source and drain. If the minimum channel length is set by a reliability factor, then the design target is determined by allowable early field failures rather than the allowable yield. This illustrates the difficulty in understanding the problems associated with scaling critica作者: exostosis 時間: 2025-3-30 10:30 作者: 出汗 時間: 2025-3-30 12:58 作者: 僵硬 時間: 2025-3-30 18:27
The Surface Inversion Problem in Trench Isolated CMOSr transistor gain will be reduced, thereby increasing the latchup initiating current. In a p-well process, the reduction of latchup sensitivity is achieved from reduction of the lateral parasitic p-n-p current gain.作者: 外觀 時間: 2025-3-30 21:58 作者: TOM 時間: 2025-3-31 02:36
Book 1988Latest editionaid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec- tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters 作者: Scintillations 時間: 2025-3-31 07:50
0893-3405 barrier lowering, trench isolation, hot elec- tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters 978-1-4612-8956-2978-1-4613-1695-4Series ISSN 0893-3405 作者: 顯微鏡 時間: 2025-3-31 10:02 作者: hypotension 時間: 2025-3-31 15:21 作者: 恩惠 時間: 2025-3-31 17:52 作者: 調(diào)色板 時間: 2025-4-1 00:23
