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標題: Titlebook: Computational Electronics; Dragica Vasileska,Stephen M. Goodnick Book 2006 Springer Nature Switzerland AG 2006 [打印本頁]

作者: Suture    時間: 2025-3-21 16:31
書目名稱Computational Electronics影響因子(影響力)




書目名稱Computational Electronics影響因子(影響力)學科排名




書目名稱Computational Electronics網(wǎng)絡(luò)公開度




書目名稱Computational Electronics網(wǎng)絡(luò)公開度學科排名




書目名稱Computational Electronics被引頻次




書目名稱Computational Electronics被引頻次學科排名




書目名稱Computational Electronics年度引用




書目名稱Computational Electronics年度引用學科排名




書目名稱Computational Electronics讀者反饋




書目名稱Computational Electronics讀者反饋學科排名





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https://doi.org/10.1007/978-3-663-14874-6device region becomes important. For example, in the ultimate limit of very small geometries at low temperatures, numerous experiments over the past two decades have clearly demonstrated the individual motion of single electrons in so-called single electron transistors.
作者: Type-1-Diabetes    時間: 2025-3-22 14:59
Hydrodynamic Model,gy balance models or Monte Carlo simulation. While it was understood that velocity overshoot near the drain would not help current drive, experimental work [57, 58] claimed to observe velocity overshoot near the source, which would be beneficial and render the drift-diffusion (DD) model invalid.
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作者: Lime石灰    時間: 2025-3-23 11:31
The Drift-Diffusion Equations and Their Numerical Solution,ing. We first look at the derivation of the DD model from the BTE, and the physical significance of the parameters associated with these equations. We then look at the numerical solution of the DD equations coupled with Poisson’s equation in the domain of the semiconductor, leading to the Sharfetter
作者: 馬具    時間: 2025-3-23 15:35
Book 2006year graduate course on computational electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of ba
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https://doi.org/10.1007/978-3-663-13008-6ing. We first look at the derivation of the DD model from the BTE, and the physical significance of the parameters associated with these equations. We then look at the numerical solution of the DD equations coupled with Poisson’s equation in the domain of the semiconductor, leading to the Sharfetter
作者: ligature    時間: 2025-3-24 03:43
https://doi.org/10.1007/978-3-663-13011-6cal phenomena at short dimensions occur, and limitations in material properties are reached [1]. In addition to the problems related to the understanding of actual operation of ultrasmall devices, the reduced feature sizes require more complicated and time-consuming manufacturing processes. This fac
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作者: Seizure    時間: 2025-3-24 14:08
https://doi.org/10.1007/978-3-663-13008-6iclassical description of charge transport via the Boltzmann Transport Equation (BTE) in Chapter 2. However, the direct solution of the full BTE is challenging computationally, particularly when combined with field solvers for device simulation. Therefore, for traditional semiconductor device modeli
作者: Fortuitous    時間: 2025-3-24 15:32
https://doi.org/10.1007/978-3-663-13009-3it was hypothesized that the effective carrier injection velocity from the source into the channel would reach the limit of the saturation velocity and remain there as longitudinal electric fields increased beyond the onset value for velocity saturation. However, theoretical work indicated that velo
作者: 失誤    時間: 2025-3-24 20:33
https://doi.org/10.1007/978-3-663-14874-6models, which are derived from moments of the semiclassical Boltzmann Transport Equation (BTE). As approximations to the BTE, it is expected that at some limit, such approaches become inaccurate, or fail completely. Indeed, one can envision that, as physical dimensions are reduced, at some level a c
作者: 奇怪    時間: 2025-3-25 03:07

作者: 稀釋前    時間: 2025-3-25 04:26
Computational Electronics978-3-031-01690-5Series ISSN 1932-1252 Series E-ISSN 1932-1716
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作者: anthesis    時間: 2025-3-25 12:15
Introduction to Computational Electronics,cal phenomena at short dimensions occur, and limitations in material properties are reached [1]. In addition to the problems related to the understanding of actual operation of ultrasmall devices, the reduced feature sizes require more complicated and time-consuming manufacturing processes. This fac
作者: 生銹    時間: 2025-3-25 18:48

作者: reperfusion    時間: 2025-3-25 20:56
The Drift-Diffusion Equations and Their Numerical Solution,iclassical description of charge transport via the Boltzmann Transport Equation (BTE) in Chapter 2. However, the direct solution of the full BTE is challenging computationally, particularly when combined with field solvers for device simulation. Therefore, for traditional semiconductor device modeli
作者: 手段    時間: 2025-3-26 02:54
Hydrodynamic Model,it was hypothesized that the effective carrier injection velocity from the source into the channel would reach the limit of the saturation velocity and remain there as longitudinal electric fields increased beyond the onset value for velocity saturation. However, theoretical work indicated that velo
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作者: 啟發(fā)    時間: 2025-3-27 00:27
Book 2024 explorativ die Anschlussf?higkeit von Boltanskis Studien für die Generierung und Sch?rfung literatursoziologischer Fragestellungen und Analysen. Die Beitr?ge fragen erstens in theoretischer Hinsicht nach der Brauchbarkeit der Arbeiten Boltanskis für die literatursoziologische Begriffsbildung, Entwi
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Retinopathy of Prematurity: Overview and Findings in the Anterior Segment of Affected Eyes,ant’s retina. The fibrotic changes characteristically seen behind the lens in the advanced stages of this disease, and for which the term retrolental fibroplasia (RLF) was given, are now thought to be a common end-stage manifestation of many diseases of the retina.
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作者: Graduated    時間: 2025-3-27 20:34
Carolyn Hamilton,Elizabeth Yarrowvorgelegt. Dabei erzielt der Autor jedoch ganz andere Ergebnisse. Ausdrücklich wird vor einer übernahme der - auch aus insolvenzrechtlicher Sicht sehr ausführlich kritisierten - Definitionen der Insolvenzer?ffnungsgründe (§§ 17-19 InsO) in das Strafrecht gewarnt. Um auch künftig nur strafwürdiges un
作者: 預兆好    時間: 2025-3-28 01:35
Book 2008 der Wertsch?pfung sowie der Bildung von Netzwerken in all diesen Ber- chen mit dem Ziel einer Optimierung der Herstellung von Produkten dokumentiert. In seiner Arbeit verknüpft er technische und ingenieurwissenschaftliche Sichtweisen mit betriebswirtschaftlichen und produktionswirtschaftlichen Kenn
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Xavier Calmet,Bernard Carr,Elizabeth Winstanley cause it to take its place as a classic. It will probably long, be read with both pleasure and advantage. In a work of this character, which may be called a polemic, or perhaps, I with greater procision, a tract, some over-emphasis is in place; it adds a spice, and at the same time reveals the sour
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Introduction,s too, and in gimmicky applications such as talking alarm clocks. Some computers could generate synthetic speech, but it was rarely used for anything more serious than impressing or amusing friends. The relatively poor quality of most synthetic speech made it unsuitable for more demanding applicatio




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