標題: Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991 [打印本頁] 作者: Jefferson 時間: 2025-3-21 19:09
書目名稱Computational Electronics影響因子(影響力)
書目名稱Computational Electronics影響因子(影響力)學科排名
書目名稱Computational Electronics網絡公開度
書目名稱Computational Electronics網絡公開度學科排名
書目名稱Computational Electronics被引頻次
書目名稱Computational Electronics被引頻次學科排名
書目名稱Computational Electronics年度引用
書目名稱Computational Electronics年度引用學科排名
書目名稱Computational Electronics讀者反饋
書目名稱Computational Electronics讀者反饋學科排名
作者: NUDGE 時間: 2025-3-21 20:46 作者: 鐵塔等 時間: 2025-3-22 01:50
Beschreibung von Steuerungsaufgaben,nt of VLSI. Simulators continue to be applied in the analysis of new device concepts and have become an essential component of the technology design process [1]. As scaling continues into the ULSI realm (≤0.25μm), device simulation faces new challenges, necessitating improvements to both physical an作者: Coronary 時間: 2025-3-22 07:11 作者: Cubicle 時間: 2025-3-22 09:11 作者: Incorporate 時間: 2025-3-22 13:13
https://doi.org/10.1007/978-3-658-21885-0ion term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes..The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-de作者: Incorporate 時間: 2025-3-22 17:22 作者: grotto 時間: 2025-3-23 01:07 作者: Eructation 時間: 2025-3-23 04:56
Steuerverfahren für Drehstrommaschinen temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.作者: aviator 時間: 2025-3-23 09:14 作者: hermitage 時間: 2025-3-23 13:25
https://doi.org/10.1007/978-3-642-82037-3nvolve tradeoffs between physical accuracy, computational costs, and implementation difficulty. This paper presents a new transport model that includes overshoot effects within the framework of a conventional drift-diffusion approach, thereby providing an attractive combination of physical accuracy 作者: 有說服力 時間: 2025-3-23 16:40 作者: 粘 時間: 2025-3-23 18:27 作者: 遠地點 時間: 2025-3-24 01:36
WELCHE Steuervorteile gibt es für Sie? more effective means to describe the behavior of device structures requiring detailed physical descriptions and increased computational efficiency. Applications presented in this paper include: (a) simulation of transport across hetero-barriers with quasi-ballistic effects; (b) simulation of metal-作者: 彩色的蠟筆 時間: 2025-3-24 04:30 作者: 預兆好 時間: 2025-3-24 10:35 作者: configuration 時間: 2025-3-24 13:12
https://doi.org/10.1007/978-3-663-13012-3in a self-consistent electric field, and a flexible representation of the two-dimensional device geometry and doping. The result is a single simulation code capable of treating a multitude of device types (MOSFET, MESFET, Bipolar, HEMT) and semiconductors (electrons in Si, Ge, unstrained SiGe, GaAs,作者: triptans 時間: 2025-3-24 15:17 作者: 勉勵 時間: 2025-3-24 20:43
Steuerverfahren für Drehstrommaschinenent criterion for the numerical analysis of PDE regardless of its decretization and solution methods. The numerical examples are presented along with the computational algorithm of IMAR and practical scheme of adaptive mesh refinement (AMR) which is implemented on 2D device simulator TSAR.作者: hallow 時間: 2025-3-25 03:00
Steuerverfahren für Drehstrommaschinen temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.作者: concise 時間: 2025-3-25 05:29
https://doi.org/10.1007/978-3-663-13013-0 In this paper, the use of this tool for the short-time regime is discussed. Here, the Coulomb interaction between electrons is simulated by a real-space molecular dynamics approach. The inclusion of the exchange interaction and finite collision duration is also discussed.作者: 寡頭政治 時間: 2025-3-25 10:49
The Springer International Series in Engineering and Computer Sciencehttp://image.papertrans.cn/c/image/232267.jpg作者: 有害 時間: 2025-3-25 11:50 作者: 以煙熏消毒 時間: 2025-3-25 19:31
A Numerical Large Signal Model for the Heterojunction Bipolar Transistor temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.作者: choroid 時間: 2025-3-25 22:14
Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors In this paper, the use of this tool for the short-time regime is discussed. Here, the Coulomb interaction between electrons is simulated by a real-space molecular dynamics approach. The inclusion of the exchange interaction and finite collision duration is also discussed.作者: 依法逮捕 時間: 2025-3-26 02:04
Rechtsschutz im Besteuerungsverfahren,This paper presents a new hydrodynamic transport model with non-parabolic conduction bands and quantum correction terms. For the first time solutions for the full quantum balance equations, applied to an ultrasmall electron device, are presented.作者: AFFIX 時間: 2025-3-26 07:47 作者: induct 時間: 2025-3-26 11:26 作者: 接觸 時間: 2025-3-26 14:17
Iterative Spectral Solution of Boltzmann’s Equation for Semiconductor DevicesAn iterative spectral method for solving Boltzmann’s equation is formulated. It is used to analyze collisionless transport in a one-dimensional silicon device structure. The obtained distribution functions are compared with exact analytical solutions. It is found that the spectral method is a highly efficient alternative to Monte Carlo.作者: 礦石 時間: 2025-3-26 19:14
Book 1991idisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many d作者: MOTTO 時間: 2025-3-26 21:53 作者: 冷峻 時間: 2025-3-27 05:07
Device Simulation for Silicon ULSInt of VLSI. Simulators continue to be applied in the analysis of new device concepts and have become an essential component of the technology design process [1]. As scaling continues into the ULSI realm (≤0.25μm), device simulation faces new challenges, necessitating improvements to both physical an作者: 漂亮才會豪華 時間: 2025-3-27 09:08
Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor om the standpoint of its decoupling fixed point map and the numerical approximate fixed point map. Variational principles will be discussed for this process and for discretizations achieved by use of generalized splines. By the choice of trial space, these capture the upwinding associated with Schar作者: ABIDE 時間: 2025-3-27 09:27
Drift-Diffusion Systems: Analysis of Discretized Modelstized model can be matched in a one to one fashion to solutions to the partial differential equation (pde) system. We employ the convergence of the discretizations of the single pdes in the system (which follows by standard finite element convergence theory) to obtain such a one to one matching. How作者: 展覽 時間: 2025-3-27 17:36
Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Ordeion term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes..The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-de作者: 制定 時間: 2025-3-27 21:32 作者: packet 時間: 2025-3-28 02:00
Adaptive Grids for Semiconductor Modellingrocess and device simulation. The procedures permit accurate realization of steep layers in the solution that frequently arise in these applications. Both two- and three-dimensional formulations are considered together with the associated quad-tree and oct-tree data structures. An element-by-element作者: RUPT 時間: 2025-3-28 05:28
A Numerical Large Signal Model for the Heterojunction Bipolar Transistor temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.作者: expdient 時間: 2025-3-28 07:04 作者: nutrition 時間: 2025-3-28 10:32 作者: Water-Brash 時間: 2025-3-28 16:17 作者: 遠地點 時間: 2025-3-28 21:49
The Conditions of Device Simulation using Full Hydrodynamic Equationsot. In devices such as short-gate (gates of order a few tens of nanometers) MESFET’s, quantum effects such as tunneling, become important. We describe aspects of the generalization to a quantum description, and the need to use appropriate initial conditions. We have introduced an effective potential作者: 曲解 時間: 2025-3-29 00:23 作者: FAST 時間: 2025-3-29 07:06 作者: Cognizance 時間: 2025-3-29 10:27 作者: Immortal 時間: 2025-3-29 11:39 作者: folliculitis 時間: 2025-3-29 19:26
Beschreibung von Steuerungsaufgaben,d numerical capabilities. It is the purpose of this paper to outline these challenges and to suggest algorithmic steps toward the development of a physically-based device simulation tool, predictive into the deep-submicron regime.作者: inspired 時間: 2025-3-29 19:57
https://doi.org/10.1007/978-3-658-21885-0pendent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.作者: 他日關稅重重 時間: 2025-3-30 00:52 作者: MERIT 時間: 2025-3-30 05:29 作者: 該得 時間: 2025-3-30 09:17
WELCHE Steuervorteile gibt es für Sie?semiconductor-metal photodetectors in which parasitic circuit effects are important; and (c) generation of transport parameters for use in drift-diffusion (and hydrodynamic) models while negating assumptions about the nature of the particle velocity distribution function.作者: 懶鬼才會衰弱 時間: 2025-3-30 13:56
https://doi.org/10.1007/978-3-658-21885-0 entire coupled model. Furthermore, the mesh and the discretization procedure must be chosen appropriately so that a priori maximum estimates on the solution for the original system hold for the discretized model as well.作者: pulmonary-edema 時間: 2025-3-30 20:13
https://doi.org/10.1007/978-3-663-13012-3n results..For purposes of this workshop, rather that dwell on our accomplishments and successes, we chose rather to summarize our work in the area of Monte Carlo device simulation, and then focus on some failures and work in progress.作者: BANAL 時間: 2025-3-31 00:00
Drift-Diffusion Systems: Analysis of Discretized Models entire coupled model. Furthermore, the mesh and the discretization procedure must be chosen appropriately so that a priori maximum estimates on the solution for the original system hold for the discretized model as well.作者: Ancestor 時間: 2025-3-31 01:24 作者: 冰雹 時間: 2025-3-31 05:52
Book 1991rkshop on Computational Electronics was intended to be a forum for the dis- cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for 作者: Incisor 時間: 2025-3-31 12:08 作者: 心胸狹窄 時間: 2025-3-31 16:30
Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Ordependent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.作者: Ethics 時間: 2025-3-31 20:14 作者: 平息 時間: 2025-3-31 22:51 作者: Graduated 時間: 2025-4-1 02:08
