標題: Titlebook: Compound and Josephson High-Speed Devices; Takahiko Misugi,Akihiro Shibatomi Book 1993 Springer Science+Business Media New York 1993 analo [打印本頁] 作者: nourish 時間: 2025-3-21 19:47
書目名稱Compound and Josephson High-Speed Devices影響因子(影響力)
書目名稱Compound and Josephson High-Speed Devices影響因子(影響力)學科排名
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書目名稱Compound and Josephson High-Speed Devices網絡公開度學科排名
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書目名稱Compound and Josephson High-Speed Devices被引頻次學科排名
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書目名稱Compound and Josephson High-Speed Devices年度引用學科排名
書目名稱Compound and Josephson High-Speed Devices讀者反饋
書目名稱Compound and Josephson High-Speed Devices讀者反饋學科排名
作者: Mri485 時間: 2025-3-21 23:23 作者: 愛哭 時間: 2025-3-22 01:22
https://doi.org/10.1007/978-3-322-90478-2 thickness on an atomic scale. To emphasize the importance of materials research, we include a chapter on material preparation and the role that it plays in the performance of the resulting devices and systems.作者: 謙卑 時間: 2025-3-22 08:27 作者: seduce 時間: 2025-3-22 10:50 作者: Senescent 時間: 2025-3-22 14:21 作者: Senescent 時間: 2025-3-22 18:00 作者: verdict 時間: 2025-3-23 01:05 作者: 音樂學者 時間: 2025-3-23 02:05
Modellerstellung auf Standortebene,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.作者: Halfhearted 時間: 2025-3-23 05:34 作者: terazosin 時間: 2025-3-23 12:03
https://doi.org/10.1007/978-3-322-88325-4uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s作者: 陳腐思想 時間: 2025-3-23 15:11
https://doi.org/10.1007/978-3-322-88325-4 to new possibilities for ultrahigh-speed large-scale integration (LSI)—verylarge-scale integration (VLSI) applications,. and high-frequency microwave devices applications. The evolution of high-speed low-power HEMT devices is the result of continuous technological progress utilizing the superior el作者: 地牢 時間: 2025-3-23 21:03 作者: absorbed 時間: 2025-3-23 23:20
Paradigma der Selbstoptimierung,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.作者: 頂點 時間: 2025-3-24 04:20 作者: 多樣 時間: 2025-3-24 06:49 作者: bronchiole 時間: 2025-3-24 11:17 作者: 哺乳動物 時間: 2025-3-24 17:48 作者: Fsh238 時間: 2025-3-24 22:38 作者: delusion 時間: 2025-3-25 01:17 作者: 鋼筆記下懲罰 時間: 2025-3-25 05:21 作者: animated 時間: 2025-3-25 07:32
High-Speed Analog Integrated Circuits,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.作者: GROVE 時間: 2025-3-25 11:43
Josephson Digital Devices,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.作者: sorbitol 時間: 2025-3-25 18:30 作者: 租約 時間: 2025-3-25 20:11 作者: 紋章 時間: 2025-3-26 00:38 作者: parasite 時間: 2025-3-26 04:51
https://doi.org/10.1007/978-3-322-88325-4thur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on selectively doped GaAs-A1GaAs heterojunction structures. are one of the successful MBE and MOCVD applications.作者: 艱苦地移動 時間: 2025-3-26 11:10
HEMT Materials,thur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on selectively doped GaAs-A1GaAs heterojunction structures. are one of the successful MBE and MOCVD applications.作者: exigent 時間: 2025-3-26 16:37
Heterojunction Bipolar Transistors,, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.作者: VICT 時間: 2025-3-26 18:19 作者: growth-factor 時間: 2025-3-26 22:46
https://doi.org/10.1007/978-3-662-56392-2, including epitaxial-layer preparation and processing. High-frequency characteristics and related electron transport peculiar to HBTs are discussed in Section 7.4. The performance of integrated circuits is described in Section 7.5. The last section summarizes state-of-the-art HBT technology and prospects for the future.作者: 衍生 時間: 2025-3-27 02:09
Introduction,uters and telecommunications systems, in order to achieve higher bit rates for operations. The motive for preparing this book was to look at the high-speed-device issue from the systems point of view. From the systems side, limitations in silicon-based device technology, such as switching speed and 作者: languor 時間: 2025-3-27 07:14
GaAs Materials,ing with the lowest integration density. Now the integration density has reached a level of 30 kgates gate array, or a level of 16 kbits Static RAM (SRAM). These GaAs ICs are currently being used in supercomputers.作者: 包租車船 時間: 2025-3-27 10:20
High-Speed Analog Integrated Circuits,tion systems in each segment are instrumentation in industrial; microwave data link, very small aperture terminal (VSAT), and fiber optics in communications; and DBS, TV, and cellular radio in the consumer market. Application systems which are under development are summarized in Table 3.1.作者: 下船 時間: 2025-3-27 16:09
GaAs ICs for Digital Applications,ness. GaAs IC chips consist of circuit elements and interconnections on a semi-insulating substrate. High-speed IC chips have to be mounted in low-capacitance packages for low-distortion waveform transmission. The most significant element of an IC is the switching transistor, which determines the in作者: 泥土謙卑 時間: 2025-3-27 21:21
HEMT Materials,uctor materials, superlattices, and heterostructure devices have been developed since the pioneering work on molecular-beam epitaxy (MBE), by J. R. Arthur and A. Y. Cho, . and metal-organic chemical vapor deposition (MOCVD), by H. M. Manasevit.. High-electron-mobility transistors (HEMTs). based on s作者: BIPED 時間: 2025-3-28 01:09 作者: 證實 時間: 2025-3-28 03:42 作者: 流利圓滑 時間: 2025-3-28 07:31
Josephson Digital Devices,r of devices based on the Josephson effect have been proposed, forming a field called superconducting electronics. A significant part of the progress in this field is due to digital applications of the Josephson effect.作者: 退出可食用 時間: 2025-3-28 10:56 作者: 極少 時間: 2025-3-28 18:12
Conceptual Design of an Intelligent Welding Cell Using SysML and Holonic Paradigmisions. Very limited research has been reported on holonic control in a flow-line type manufacturing systems such as welding cells..In this paper we present a conceptual design of an intelligent welding cell using SysML (Systems Modeling Language). The holonic paradigm has been adopted to check the
