作者: debunk 時間: 2025-3-21 20:32 作者: Immortal 時間: 2025-3-22 01:10 作者: 沉積物 時間: 2025-3-22 04:59 作者: 存心 時間: 2025-3-22 08:44 作者: 人類的發(fā)源 時間: 2025-3-22 16:52
Introduction to Bipolar Transistor Modelingon fundamental device physics and modeling; subsequent chapters give specific details of two advanced models, Mextram and HiCuM. We first give a synopsis of basic BJT device behavior and modeling, and then introduce the Gummel integral charge control relationship, which elegantly and physically enca作者: 人類的發(fā)源 時間: 2025-3-22 17:14
Mextram the model. Mextram has been developed to capture all terminal characteristics of bipolar transistors that are relevant to industrial electronic circuit design of any Si or SiGe bipolar transistor, under all relevant practical circumstances. History, basic structure and features of the model are dis作者: 冷淡一切 時間: 2025-3-22 23:03 作者: 高貴領導 時間: 2025-3-23 02:52 作者: licence 時間: 2025-3-23 06:27 作者: Accommodation 時間: 2025-3-23 13:01
Surface-Potential-Based MOS Varactor Modelctor, and Freescale Semiconductor to facilitate RF CMOS design. We give details of the model, which is based on PSP, and show how it fits key device characteristics, including capacitance, gate current, and quality factor as functions of voltage, frequency, and geometry, for several technologies. Re作者: optional 時間: 2025-3-23 15:53
Modeling of On-chip RF Passive Components distributed nature of the structure at high frequency. This is especially true for inductive components, namely inductors and transformers including baluns, because of the open capacitive and (long-range) magnetic couplings between the top widing metal layers and the lossy silicon substrate..This c作者: 強化 時間: 2025-3-23 18:22
Multi-Gate MOSFET Compact Model BSIM-MGsimulation in such advanced technologies, we have developed BSIM-MG: a versatile compact model for multi-gate MOSFETs. In this chapter separate formulations for common multi-gate and independent multi-gate MOSFETs are presented. The core .-. and .-. models are derived and agree well with TCAD simula作者: 熄滅 時間: 2025-3-24 00:33 作者: 燒瓶 時間: 2025-3-24 03:23
Book 2010etically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.作者: 生命層 時間: 2025-3-24 10:28 作者: Ballad 時間: 2025-3-24 13:14
https://doi.org/10.1007/978-3-322-81303-9ors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.作者: miracle 時間: 2025-3-24 18:37
Datenstruktur und methodische Probleme,(JUNCAP2 Express) are also discussed in this chapter. The JUNCAP2 model is incorporated in the PSP model for bulk MOSFET’s (see Chap.?1 of this book) and in the PSP-SOI model for SOI MOSFET’s (see Chap.?2 of this book).作者: Hemiparesis 時間: 2025-3-24 22:20
https://doi.org/10.1007/978-3-322-88668-2its data very well across a wide range of biases, gate lengths and temperatures. It is also computationally efficient and suitable for simulating large circuits. Finally, several multi-gate circuit simulation examples are presented to demonstrate the use of the model.作者: 無底 時間: 2025-3-25 00:51
PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETsbody, and valence band tunneling current) and include a detailed description of parasitic effects. We discuss both the theoretical developments and verification of the model against test data and TCAD simulations with particular emphasis on the interplay between the model structure and its simulation capabilities.作者: Metastasis 時間: 2025-3-25 06:06
Integrated Resistor Modelingors (which are really JFETs). The model includes geometry and temperature dependence, and also has statistical variability, including mismatch, built in. Details of some useful parameter extraction procedures are provided.作者: 溺愛 時間: 2025-3-25 08:17 作者: Epidural-Space 時間: 2025-3-25 14:49 作者: Obscure 時間: 2025-3-25 18:13
Introduction to Bipolar Transistor Modelingpsulates the core description of BJT operation. The development of approximations to this key relationship, which leads to the widely known and used SGP (SPICE Gummel-Poon) model, are detailed, as are modifications necessary for modeling III-V HBT devices.作者: Frequency 時間: 2025-3-25 23:59 作者: FAWN 時間: 2025-3-26 01:25 作者: 小官 時間: 2025-3-26 04:37 作者: 蟄伏 時間: 2025-3-26 12:17
https://doi.org/10.1007/978-3-663-11396-6 Philips Research) Laboratories is demonstrated in detail. The first CMC (Compact Modeling Council) standard high voltage MOSFET model HiSIM_HV developed by Hiroshima University is explained as well. Finally, characterization and measurement strategies for LDMOS modeling are described.作者: 娘娘腔 時間: 2025-3-26 13:20 作者: 琺瑯 時間: 2025-3-26 19:14
High-Voltage MOSFET Modeling Philips Research) Laboratories is demonstrated in detail. The first CMC (Compact Modeling Council) standard high voltage MOSFET model HiSIM_HV developed by Hiroshima University is explained as well. Finally, characterization and measurement strategies for LDMOS modeling are described.作者: Kernel 時間: 2025-3-27 00:57
The HiCuM Bipolar Transistor Modelistent set of important device characteristics exhibit excellent agreement over bias, temperature and geometry, and demonstrate the suitability of the model for such high-frequency bipolar process technologies.作者: 小平面 時間: 2025-3-27 04:25
or the widely used model with wide industrial applications.BMost of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly 作者: neutrophils 時間: 2025-3-27 05:24 作者: 引起痛苦 時間: 2025-3-27 10:07 作者: Hemiparesis 時間: 2025-3-27 15:25
Das Konzept der sozialen Distanz,cent advances in the parameter extraction procedure are also reviewed. The model is implemented in Verilog-A and provides a robust and accurate description of MOS varactors, including their RF performance. A VCO design application is presented to illustrate the capabilities of the new model.作者: Hectic 時間: 2025-3-27 21:40
Sozialpsychologische Aspekte des Sportsodels based on the scale length approach to the boundary value problems of 2-D Poisson’s equation in subthreshold are then described, followed by charge and capacitance models for both double-gate and nanowire MOSFETs. A popular, surface-potential based current expression in the literature is examined before concluding the chapter.作者: Endemic 時間: 2025-3-27 22:14 作者: 被告 時間: 2025-3-28 02:15
al years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.978-94-007-9324-8978-90-481-8614-3作者: pantomime 時間: 2025-3-28 09:52
Drei Kritiken am Klassenbegriff,common to require the existence of fifth order derivatives) and several new benchmark tests, targeted for RF design needs, were developed. This chapter describes both traditional and newly developed MOSFET model benchmark tests and applies them to the PSP model.作者: 畏縮 時間: 2025-3-28 13:53
https://doi.org/10.1007/978-3-322-80531-7uality factor ., and self-resonant frequency . (due to inevitable parasitic capacitance across the port of the inductor). Both one-. and two-. circuit topologies for inductor modeling are reviewed with tilt toward the former because of its renaissance recently. The discussion on transformer modeling作者: 滴注 時間: 2025-3-28 18:05 作者: mitral-valve 時間: 2025-3-28 19:23 作者: MAL 時間: 2025-3-29 01:36 作者: Shuttle 時間: 2025-3-29 06:22
978-94-007-9324-8Springer Science+Business Media B.V. 2010作者: 現(xiàn)實 時間: 2025-3-29 08:46
Gennady GildenblatA comprehensive book on compact models of most commonly used semiconductor devices.Each chapter is covered by an expert, often responsible for the widely used model with wide industrial applications.B作者: 尊敬 時間: 2025-3-29 15:08 作者: zonules 時間: 2025-3-29 17:38
Soziale Differenz und Reifizierungeveloped by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications.作者: 颶風 時間: 2025-3-29 20:35
https://doi.org/10.1007/978-3-531-93143-2ic fluctuations which are inherent in the device structure and extrinsic fluctuations that are subject to optimization and elimination. While most noise sources are well understood, excess channel noise and 1/. noise continue to be areas of active research.作者: Salivary-Gland 時間: 2025-3-30 02:15
Surface-Potential-Based Compact Model of Bulk MOSFETeveloped by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications.作者: 吼叫 時間: 2025-3-30 04:07 作者: Coronary 時間: 2025-3-30 11:23
Soziale Differenz und Reifizierungeveloped by the Arizona State University and NXP Semiconductors. The emphasis is on the interplay between the mathematical structure of the compact model and its capabilities for the circuit design applications.作者: 薄荷醇 時間: 2025-3-30 14:05 作者: largesse 時間: 2025-3-30 19:20
Drei Kritiken am Klassenbegriff,exhibit qualitatively correct physical behavior for drain current, terminal charges, noise, and all derivatives. Physics-based models may automatically embody the correct physical behavior for long-channel devices, but compact models of scaled transistors inevitably involve approximations that can i作者: browbeat 時間: 2025-3-30 23:54 作者: chastise 時間: 2025-3-31 04:11
https://doi.org/10.1007/978-3-531-93143-2ic fluctuations which are inherent in the device structure and extrinsic fluctuations that are subject to optimization and elimination. While most noise sources are well understood, excess channel noise and 1/. noise continue to be areas of active research.作者: 持續(xù) 時間: 2025-3-31 05:23 作者: Asymptomatic 時間: 2025-3-31 12:08
Thomas Schwinn,Clemens Kroneberg,Jens Greve the model. Mextram has been developed to capture all terminal characteristics of bipolar transistors that are relevant to industrial electronic circuit design of any Si or SiGe bipolar transistor, under all relevant practical circumstances. History, basic structure and features of the model are dis
