標(biāo)題: Titlebook: Cohesive Properties of Semiconductors under Laser Irradiation; Lucien D. Laude (Professor of Solid State Physics) Book 1983 Martinus Nijho [打印本頁] 作者: 黑暗社會 時間: 2025-3-21 18:01
書目名稱Cohesive Properties of Semiconductors under Laser Irradiation影響因子(影響力)
書目名稱Cohesive Properties of Semiconductors under Laser Irradiation影響因子(影響力)學(xué)科排名
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書目名稱Cohesive Properties of Semiconductors under Laser Irradiation網(wǎng)絡(luò)公開度學(xué)科排名
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書目名稱Cohesive Properties of Semiconductors under Laser Irradiation讀者反饋
書目名稱Cohesive Properties of Semiconductors under Laser Irradiation讀者反饋學(xué)科排名
作者: 抗生素 時間: 2025-3-21 22:17 作者: osteopath 時間: 2025-3-22 03:10
Transport Theory,unctions. Then, in the limit of long times and large distances, these kinetic equations lead to transport equations for the (quasi-) conserved quantities. This last step provides explicit expressions for the transport coefficients in terms of the microscopic properties of the particles and the inter作者: 滲透 時間: 2025-3-22 06:01 作者: PANG 時間: 2025-3-22 11:48 作者: MINT 時間: 2025-3-22 13:17
Theory of Crystal Growth,ire quite a number of material parameters as an input, for example the lattice symmetry of a crystal, since obviously we cannot hope to explain macroscopic crystalline structure starting from microscopic quantum mechanical formulation (at least in most cases!).作者: MINT 時間: 2025-3-22 19:12
Dynamical Processes during Solidification,face layer during solidification. It leads to a slowing down of the thermal diffusion by about five orders of magnitude relative to the melt. The model and the experiments lead to a thickness of the interface layer of a few μm. Universal laws for free and directional solidification are proposed on t作者: 鎮(zhèn)壓 時間: 2025-3-22 23:14 作者: 割讓 時間: 2025-3-23 04:23
Transient Bulk Induced Nucleation in Amorphous Group IV Semiconductors,licon with the theory of transient nucleation[ 1] . The phenomena has been observed [ 2,3] in a temperature range of 660–678 K in germanium and of 833–873 K in silicon. Before the steady state regime, a transient period of duration τ occurs. We determine an expression for τ and show that it is therm作者: 占線 時間: 2025-3-23 09:03
Crystalline, Amorphous and Liquid Silicon,ious phases of silicon : ion-implanted layers (which are amorphous), crystal and liquid. Most authors believe that during laser annealing the surface layer melts and recrystallizes in times of order of hundreds of nanoseconds, i.e. short enough to avoid diffusion of dopants.作者: Somber 時間: 2025-3-23 10:05 作者: 展覽 時間: 2025-3-23 17:12
Generation, Diffusion and Relaxation of Dense Plasmas in Semiconductors,equilibrium carrier dynamics and active nonlinearities in crystalline germanium at excitation levels approaching damage. An investigation of the dynamics of the Moss-Burstein shift of the absorption edge allows the identification of the onset of intervalence-band absorption, indicates a slow carrier作者: 系列 時間: 2025-3-23 19:42
Transient Optical Properties of Laser-Excited Si,ed for photon energies from 0.79 eV to 3.1 eV. The transmission through ~1μm thick silicon-on-sapphire (SOS) samples is ? 1% throughout this range. On ion-implantation-amorphized SOS the rapid rise in transmission which occurs in the 50–100 nsec following the high reflectivity phase can be used to e作者: Virtues 時間: 2025-3-24 00:21
Time-Resolved Raman Studies of Laser-Excited Semiconductors, 1 J/cm.) laser pulse. In ion-implantation-amorphized Si the onset of recrystallization is clearly characterized by the appearance of a sharp Raman feature near 520 cm. well within the first 50 nsec. We find no Raman line during the laser-induced high reflectivity period in either crystalline or amo作者: Definitive 時間: 2025-3-24 04:10
Ultrafast Phase Transitions in Silicon Induced by Picosecond Laser Interaction,the duration of a single picosecond pulse (~25ps). Complementary measurements of electron emission and charged particle emission demonstrate that the lattice is heated to the melting point even within the range of picoseconds. The phase transition can be entirely explained by simple thermal melting.作者: 青少年 時間: 2025-3-24 09:30
Plasma Annealing and Laser Sputtering; Role of the Frenkel Exciton,tion is quite negligible. The same can be shown to be true for pulsed laser sputtering. By considering the non-thermal mechanisms by which laser irradiation causes atoms and ions to be sputtered from the surface, we may gain a better understanding of pulsed beam annealing. In particular, it is noted作者: 包裹 時間: 2025-3-24 11:46 作者: Demulcent 時間: 2025-3-24 18:06 作者: Myofibrils 時間: 2025-3-24 21:17 作者: Kidnap 時間: 2025-3-25 01:37 作者: 結(jié)果 時間: 2025-3-25 04:24
Transient Bulk Induced Nucleation in Amorphous Group IV Semiconductors,rom this, we obtain the number of atoms of the nucleus of critical size for germanium and silicon. These values are in agreement with those previously obtained from the study of the steady state regime [ 2,3].作者: 設(shè)施 時間: 2025-3-25 08:19 作者: 手工藝品 時間: 2025-3-25 14:12 作者: zonules 時間: 2025-3-25 19:29
Transient Optical Properties of Laser-Excited Si,stimate the regrowth velocity. Beyond 200 nsec the transmission recovery at 633 and 514nm can be used to estimate the Si temperature and cooling rate. From the differences observed between amorphous and crystalline starting material we estimate the latent heat of recrystallization of the amorphous phase.作者: BARGE 時間: 2025-3-25 22:13 作者: 軟膏 時間: 2025-3-26 00:19 作者: 受傷 時間: 2025-3-26 05:18
,Theoretische Grundlagen der Markenführung,te. The irradiation implies also physical conditions far from thermodynamic equilibrium. High quenching rates ~10.K/s, high thermal gradients ~10.K/cm and velocity of the liquid-solid interface of several meters per second characterize for instance the thermal behaviour for laser irradiation of semiconductors [ 2].作者: 暴行 時間: 2025-3-26 10:11
https://doi.org/10.1007/978-1-4471-1392-8 cooling and suggests that nonlinear diffusion mechanisms are important at these high carrier densities. A simple parametric approach to the analysis is described that circumvents knowing the coupling constants at these carrier densities and that provides agreement with the tendencies in the data.作者: GRATE 時間: 2025-3-26 14:50
Sensory Disorders of the Bladder and Urethrastimate the regrowth velocity. Beyond 200 nsec the transmission recovery at 633 and 514nm can be used to estimate the Si temperature and cooling rate. From the differences observed between amorphous and crystalline starting material we estimate the latent heat of recrystallization of the amorphous phase.作者: OVERT 時間: 2025-3-26 18:27
Treatment of Interstitial Cystitisrphous Si and find immediately thereafter that the optic phonon population is characteristic of a temperature no greater than 450 C. We show also that the correction factors necessary for evaluating a temperature from the Stokes/anti-Stokes ratio may be empirically obtained rigorously from the time-reversal invariance of the Raman cross section.作者: neologism 時間: 2025-3-26 23:41 作者: vascular 時間: 2025-3-27 04:54 作者: PANT 時間: 2025-3-27 05:46 作者: Prosaic 時間: 2025-3-27 10:25 作者: 缺陷 時間: 2025-3-27 15:08
Central Coding in the Somatic Sensesgrowth [ 1] . The kinetics of the phenomenon can be described by two constants : the rate of nucleation R* (number of β domain appearing per unit time and per unit volume of the untransformed phase α) and the rate of growth after nucleation, u(cm. s.). The aim of nucleation theory is to calculate the nucleation rate R*.作者: chemoprevention 時間: 2025-3-27 20:21
Phase Diagrams and Segregation,The equilibrium segregation behavior of many systems can, in principle, be deduced from their phase diagrams. Hence, the interpretation of phase diagrams is at the heart of designing materials preparation processes.作者: 綠州 時間: 2025-3-28 00:19 作者: 放縱 時間: 2025-3-28 04:22
Cohesive Properties of Semiconductors under Laser Irradiation978-94-009-6890-5Series ISSN 0168-132X 作者: 種子 時間: 2025-3-28 06:31 作者: 溫室 時間: 2025-3-28 14:02
The Central Code of the Chemical Senses” mentioned, and some theoretical aspects of . outlined. Then . and the concept of “.” are reviewed. The second part concerns the . by ., significance of .; decay of unstable phases by . instabilities. The third part discusses ..作者: 教育學(xué) 時間: 2025-3-28 17:29 作者: antiquated 時間: 2025-3-28 22:37 作者: 形狀 時間: 2025-3-29 02:58 作者: AMPLE 時間: 2025-3-29 03:32 作者: 不發(fā)音 時間: 2025-3-29 08:21
https://doi.org/10.1007/978-3-8349-6602-5oducing a large number of excess carriers by irradiating with energies larger than the band gap. The first researches were in fact on the enhanced reflectivity produced by the extra carriers introduced by laser irradiation in semiconductor mirrors to be used as passive Q-switches in ruby and Nd lase作者: 有罪 時間: 2025-3-29 13:17 作者: 手銬 時間: 2025-3-29 18:00 作者: 蹣跚 時間: 2025-3-29 20:26
https://doi.org/10.1007/978-3-658-16420-1eir mixtures. Segregation pertains to the fact that most materials systems (of technological interest) undergo compositional changes on phase change. The equilibrium segregation behavior of many systems can, in principle, be deduced from their phase diagrams. Hence, the interpretation of phase diagr作者: defile 時間: 2025-3-30 01:15 作者: macrophage 時間: 2025-3-30 07:19 作者: 桶去微染 時間: 2025-3-30 09:13
Signalling in the Nervous Systemface layer during solidification. It leads to a slowing down of the thermal diffusion by about five orders of magnitude relative to the melt. The model and the experiments lead to a thickness of the interface layer of a few μm. Universal laws for free and directional solidification are proposed on t作者: 刀鋒 時間: 2025-3-30 12:28 作者: Headstrong 時間: 2025-3-30 17:40
Central Coding in the Somatic Senseslicon with the theory of transient nucleation[ 1] . The phenomena has been observed [ 2,3] in a temperature range of 660–678 K in germanium and of 833–873 K in silicon. Before the steady state regime, a transient period of duration τ occurs. We determine an expression for τ and show that it is therm作者: NEEDY 時間: 2025-3-30 22:46
Signalling in the Nervous Systemious phases of silicon : ion-implanted layers (which are amorphous), crystal and liquid. Most authors believe that during laser annealing the surface layer melts and recrystallizes in times of order of hundreds of nanoseconds, i.e. short enough to avoid diffusion of dopants.作者: Noisome 時間: 2025-3-31 01:28 作者: 集聚成團(tuán) 時間: 2025-3-31 07:33
https://doi.org/10.1007/978-1-4471-1392-8equilibrium carrier dynamics and active nonlinearities in crystalline germanium at excitation levels approaching damage. An investigation of the dynamics of the Moss-Burstein shift of the absorption edge allows the identification of the onset of intervalence-band absorption, indicates a slow carrier作者: 洞穴 時間: 2025-3-31 12:46 作者: Functional 時間: 2025-3-31 17:21
Treatment of Interstitial Cystitis 1 J/cm.) laser pulse. In ion-implantation-amorphized Si the onset of recrystallization is clearly characterized by the appearance of a sharp Raman feature near 520 cm. well within the first 50 nsec. We find no Raman line during the laser-induced high reflectivity period in either crystalline or amo作者: angina-pectoris 時間: 2025-3-31 17:59 作者: concentrate 時間: 2025-4-1 01:00
Treatment of Interstitial Cystitistion is quite negligible. The same can be shown to be true for pulsed laser sputtering. By considering the non-thermal mechanisms by which laser irradiation causes atoms and ions to be sputtered from the surface, we may gain a better understanding of pulsed beam annealing. In particular, it is noted
