作者: 消息靈通 時間: 2025-3-21 21:42
https://doi.org/10.1007/978-3-7091-6636-9ging is lacking. Correspondences and contrasts in charging behavior on surfaces and in the bulk have not been clearly delineated. The same lacuna exists for the various semiconductor types (Group IV, Group III-V, and oxide semiconductors). The present book helps to fill those gaps by compiling and a作者: 嚴厲批評 時間: 2025-3-22 00:24
Protein Stability and Function,cated, with special attention paid to distinguish site-to-site hopping from overall mass transport – a distinction often missed in the literature. Specialized phenomena such as non-thermally stimulated defect formation and interaction of a surface with bulk defects are also described.作者: hypnogram 時間: 2025-3-22 05:23
Predictability of complex systemsbased methods such as maximum-likelihood estimation are especially valuable for distilling the results of disparate methods into a single “best” value for a defect formation energy, ionization level, or activation energy of diffusion. This chapter describes the implementation of maximum likelihood e作者: inspiration 時間: 2025-3-22 10:55 作者: 哀求 時間: 2025-3-22 16:09
Consequences for traditional decision making a given semiconductor and Fermi level, the two types do not necessarily have the same charge states. Furthermore, there is often a smaller range of stable charge states on the surface than in the bulk.作者: 哀求 時間: 2025-3-22 21:02 作者: Incisor 時間: 2025-3-22 22:24
Recent performance of economic forecastsentional bulk dopants, or for which there otherwise exists a significant literature on ionization. The discussion focuses mostly on structure, as few ionization levels have been determined and diffusion is treated in Chap. 7. The literature is small compared to that for bulk defects, mostly because 作者: Crumple 時間: 2025-3-23 04:40
Introduction,ging is lacking. Correspondences and contrasts in charging behavior on surfaces and in the bulk have not been clearly delineated. The same lacuna exists for the various semiconductor types (Group IV, Group III-V, and oxide semiconductors). The present book helps to fill those gaps by compiling and a作者: 整頓 時間: 2025-3-23 09:10
Fundamentals of Defect Ionization and Transport,cated, with special attention paid to distinguish site-to-site hopping from overall mass transport – a distinction often missed in the literature. Specialized phenomena such as non-thermally stimulated defect formation and interaction of a surface with bulk defects are also described.作者: 擔憂 時間: 2025-3-23 13:20
Experimental and Computational Characterization,based methods such as maximum-likelihood estimation are especially valuable for distilling the results of disparate methods into a single “best” value for a defect formation energy, ionization level, or activation energy of diffusion. This chapter describes the implementation of maximum likelihood e作者: PAC 時間: 2025-3-23 15:55
Trends in Charged Defect Behavior,arts in the bulk. Only modest correspondence exists between the stable charge states of isolated point defects and the corresponding defect associates. At a given Fermi energy, the charge state of a defect associate does not necessarily equal the sum of the charges of the constituent defects. Althou作者: 制度 時間: 2025-3-23 20:53 作者: faucet 時間: 2025-3-24 01:16 作者: 我就不公正 時間: 2025-3-24 04:47 作者: fulmination 時間: 2025-3-24 06:48
Charged Semiconductor Defects978-1-84882-059-3Series ISSN 1619-0181 Series E-ISSN 2365-0761 作者: concentrate 時間: 2025-3-24 13:48 作者: allergen 時間: 2025-3-24 17:58
Engineering Materials and Processeshttp://image.papertrans.cn/c/image/224078.jpg作者: 工作 時間: 2025-3-24 20:26 作者: 單獨 時間: 2025-3-25 00:53 作者: 食料 時間: 2025-3-25 05:13 作者: 托人看管 時間: 2025-3-25 07:30 作者: biosphere 時間: 2025-3-25 14:39 作者: Collision 時間: 2025-3-25 16:56 作者: 規(guī)章 時間: 2025-3-25 23:19 作者: 鋼筆尖 時間: 2025-3-26 03:19 作者: assent 時間: 2025-3-26 04:30
https://doi.org/10.1007/978-1-84882-059-3Catalysis; Defect; Diffusion; Microelectronics; SRUS; Semiconductor; Sensor; thermodynamics; transistor作者: 可觸知 時間: 2025-3-26 12:13
978-1-84996-820-1Springer-Verlag London 2009作者: glamor 時間: 2025-3-26 14:26
Introduction,l performance, various forms of “defect engineering” have been developed to control defect behavior within the solid. Similarly, a better understanding of surface defects is becoming increasingly important in applications. It has long been known that semiconductor defects can be electrically charged作者: 美麗的寫 時間: 2025-3-26 19:10
Fundamentals of Defect Ionization and Transport,s of defect charging and defect-defect reactions. Basic equations are given to describe the free energies of charging together with ionization levels, thereby permitting calculation of the most stable charge state and its concentration relative to other states. An unusually comprehensive treatment o作者: Agnosia 時間: 2025-3-27 00:42 作者: 直覺好 時間: 2025-3-27 03:05 作者: 繞著哥哥問 時間: 2025-3-27 06:39
Intrinsic Defects: Structure,insic point defects, clusters, and associates that exist within the semiconductor bulk or on the surface, and then summarizes the extensive literature about the variation of the corresponding structures with charge state. Group IV, III-V, and common oxide semiconductors such as ZnO and TiO. are trea作者: Stable-Angina 時間: 2025-3-27 09:56
Intrinsic Defects: Ionization Thermodynamics,gen pressure (for oxides). For most semiconductor defects, identification of the most stable charge states as a function of Fermi level (and other conditions) is best quantified via ionization levels. Numerous experimental and computational reports give values for the ionization levels of defects wi作者: 令人心醉 時間: 2025-3-27 15:41
Intrinsic Defects: Diffusion,tes and clusters. This chapter summarizes the literature regarding the mechanisms for charge state effects on defect site-to-site hopping as well as overall mass transport that depends upon the number of mobile defects. More than one type of defect (or defect charge state) can contribute to overall 作者: Epidural-Space 時間: 2025-3-27 21:27 作者: dermatomyositis 時間: 2025-3-28 00:24 作者: 匍匐前進 時間: 2025-3-28 03:17 作者: 不愛防注射 時間: 2025-3-28 08:27
https://doi.org/10.1007/978-3-8350-9053-8ct symmetry, as well as the magnitude and direction of the relaxation by nearby atoms, is described in detail for many specific bulk and surface defect types, with special emphasis upon how these features depend upon charge state. Related results for defect clusters and associates are also described.作者: 未開化 時間: 2025-3-28 12:55 作者: altruism 時間: 2025-3-28 16:11 作者: Measured 時間: 2025-3-28 21:03
Studies in Russian and East European History and Societyhttp://image.papertrans.cn/d/image/264358.jpg
