標(biāo)題: Titlebook: Carbon Nanotubes for Interconnects; Process, Design and Aida Todri-Sanial,Jean Dijon,Antonio Maffucci Book 2017 Springer International Pub [打印本頁] 作者: Inspection 時(shí)間: 2025-3-21 17:32
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書目名稱Carbon Nanotubes for Interconnects被引頻次學(xué)科排名
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書目名稱Carbon Nanotubes for Interconnects讀者反饋
書目名稱Carbon Nanotubes for Interconnects讀者反饋學(xué)科排名
作者: NEXUS 時(shí)間: 2025-3-21 23:21
https://doi.org/10.1007/978-3-642-23409-5Analysis for very large-scale integrated (VLSI) systems (modeled using an entire IBM Power 7 processor) reveals CNT field effect transistors (CNFETs) would provide an order of magnitude benefit in the energy-delay product (EDP, a measure of energy efficiency) over silicon CMOS [6–9].作者: Neuropeptides 時(shí)間: 2025-3-22 01:05
nect problems for both 2D and 3D interconnects.Covers topicsThis book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material作者: llibretto 時(shí)間: 2025-3-22 04:40 作者: cringe 時(shí)間: 2025-3-22 11:22 作者: aspect 時(shí)間: 2025-3-22 13:22 作者: aspect 時(shí)間: 2025-3-22 20:16
Electrical Conductivity of Carbon Nanotubes: Modeling and Characterizationtransitions are taken into account. The conductivity model is consistent with the classical Drude model and is able to describe novel phenomena associated with the signal propagation along CNTs, such as plasmon resonances of slow surface waves or intershell tunneling effect.作者: 發(fā)炎 時(shí)間: 2025-3-23 01:16
Carbon Nanotubes for Monolithic 3D ICsAnalysis for very large-scale integrated (VLSI) systems (modeled using an entire IBM Power 7 processor) reveals CNT field effect transistors (CNFETs) would provide an order of magnitude benefit in the energy-delay product (EDP, a measure of energy efficiency) over silicon CMOS [6–9].作者: Host142 時(shí)間: 2025-3-23 01:39 作者: 反饋 時(shí)間: 2025-3-23 07:23 作者: Antagonism 時(shí)間: 2025-3-23 11:07
Book 2017 also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.作者: Nuance 時(shí)間: 2025-3-23 15:01 作者: Judicious 時(shí)間: 2025-3-23 19:18 作者: 溝通 時(shí)間: 2025-3-23 23:31
https://doi.org/10.1007/978-3-319-29746-03D Integrated Circuits; Carbon Nanotubes; Carbon Nanotubes and Nanostructures; Graphene; Graphene Nanori作者: Offset 時(shí)間: 2025-3-24 04:19
978-3-319-80642-6Springer International Publishing Switzerland 2017作者: 單純 時(shí)間: 2025-3-24 08:45 作者: accordance 時(shí)間: 2025-3-24 13:35
http://image.papertrans.cn/c/image/221619.jpg作者: 賭博 時(shí)間: 2025-3-24 17:29
https://doi.org/10.1007/978-3-642-23409-5in the next decade is the degrading interconnect performance. Interconnects limit the performance of integrated circuits (IC) because they add extra delay to critical paths, dissipate dynamic power, disturb signal integrity, and impose reliability concerns due to electromigration (EM) and time-depen作者: Subjugate 時(shí)間: 2025-3-24 22:42
https://doi.org/10.1007/978-3-642-23409-5as a core and foundation of the electronic information technology has a great influence on the daily life of human being. The semiconductor technology and IC industry have become an important symbol to embody a country’s comprehensive scientific and technological capability. In order to improve circ作者: 先兆 時(shí)間: 2025-3-25 00:09 作者: Chameleon 時(shí)間: 2025-3-25 05:38 作者: 能得到 時(shí)間: 2025-3-25 10:35
https://doi.org/10.1007/978-3-642-23409-5he complex and inherently multiscale nature of the structural organization of the CNT network materials necessitates combination of atomistic and mesoscopic simulation techniques which provide complementary information on different aspects of the heat transfer in CNT materials and facilitate the dev作者: Curmudgeon 時(shí)間: 2025-3-25 11:49
https://doi.org/10.1007/978-3-642-23409-5the early 1970s a model development based on the shrinking of the integrated structures (transistors, connections) in the chips. This provides a long-term road map for technological development as well as a very efficient economic model. The size reduction, all other aspects being equal, results in 作者: PSA-velocity 時(shí)間: 2025-3-25 17:43 作者: 頭腦冷靜 時(shí)間: 2025-3-25 23:56 作者: 合唱團(tuán) 時(shí)間: 2025-3-26 04:07 作者: plasma 時(shí)間: 2025-3-26 07:28
https://doi.org/10.1007/978-3-642-23409-5chip and off-chip interconnects. The attractive mechanical properties of CNTs, including high Young’s modulus, resiliency, and low thermal expansion coefficient offer great advantage for reliable and strong interconnects, and even more so for 3D integration. Through-Silicon-Vias (TSVs) enable 3D int作者: 南極 時(shí)間: 2025-3-26 12:14 作者: Seminar 時(shí)間: 2025-3-26 14:20 作者: Peak-Bone-Mass 時(shí)間: 2025-3-26 20:51
https://doi.org/10.1007/978-3-642-23409-5aterial aluminum (Al) [4], an increase in electric resistance and capacitance due to increasing wire length and decreasing wire interval as dimension scales down had led to large signal delays [5] and poor tolerance to electromigration (EM) [6]. Because of its lower resistivity, higher melting point作者: 入伍儀式 時(shí)間: 2025-3-26 23:17 作者: 催眠 時(shí)間: 2025-3-27 02:40
https://doi.org/10.1007/978-3-642-23409-5us process and not based on technological breakthrough at each node. Indeed it is reasonable to anticipate that such breakthroughs take a considerable amount of time to be fully realized and implemented. Initially the performances of the chips were largely limited by the active components which are 作者: SLAG 時(shí)間: 2025-3-27 08:52
https://doi.org/10.1007/978-3-642-23409-5he-art interconnect interfaces, the development of predictive modeling tools based on multidisciplinary and advanced multiscales approaches, and the fabrication and tests of representative demonstrators with a significant impact..The work described in this chapter is in this context. We propose inno作者: Inculcate 時(shí)間: 2025-3-27 12:05
https://doi.org/10.1007/978-3-642-23409-5 used are copper (Cu), tungsten (W), and even doped poly-silicon. However, there are still some reliability and thermal management issues to be further studied in the realization of TSV-based 3-D ICs.作者: 親愛 時(shí)間: 2025-3-27 15:54
Overview of the Interconnect Problemthe cost due to the increasing number of required metal levels. All of these limitations become increasingly restrictive with dimensional scaling. In this chapter, the challenges associated with integrating the conventional copper-based interconnect technology at future technology generations are de作者: Bouquet 時(shí)間: 2025-3-27 20:23
Overview of Carbon Nanotube Interconnectsaterial aluminum (Al) [4], an increase in electric resistance and capacitance due to increasing wire length and decreasing wire interval as dimension scales down had led to large signal delays [5] and poor tolerance to electromigration (EM) [6]. Because of its lower resistivity, higher melting point作者: AMEND 時(shí)間: 2025-3-27 22:01
Computational Studies of Thermal Transport Properties of Carbon Nanotube Materialsining the results obtained with different computational methods and dealing with processes occurring at different time and length scales. A number of research questions that have been subjects of contradictory claims and controversial discussion in literature are critically reviewed and promising fu作者: Oligarchy 時(shí)間: 2025-3-28 04:23
Overview of Carbon Nanotubes for Horizontal On-Chip Interconnectsus process and not based on technological breakthrough at each node. Indeed it is reasonable to anticipate that such breakthroughs take a considerable amount of time to be fully realized and implemented. Initially the performances of the chips were largely limited by the active components which are 作者: 粗糙 時(shí)間: 2025-3-28 06:47 作者: 故意釣到白楊 時(shí)間: 2025-3-28 10:54 作者: LIEN 時(shí)間: 2025-3-28 16:07
terconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.978-3-319-80642-6978-3-319-29746-0作者: 闖入 時(shí)間: 2025-3-28 21:31 作者: FLAIL 時(shí)間: 2025-3-29 01:53
Overview of Carbon Nanotube Interconnectsas a core and foundation of the electronic information technology has a great influence on the daily life of human being. The semiconductor technology and IC industry have become an important symbol to embody a country’s comprehensive scientific and technological capability. In order to improve circ作者: FATAL 時(shí)間: 2025-3-29 04:04 作者: Mangle 時(shí)間: 2025-3-29 08:27 作者: BILK 時(shí)間: 2025-3-29 12:19
Computational Studies of Thermal Transport Properties of Carbon Nanotube Materialshe complex and inherently multiscale nature of the structural organization of the CNT network materials necessitates combination of atomistic and mesoscopic simulation techniques which provide complementary information on different aspects of the heat transfer in CNT materials and facilitate the dev作者: 名次后綴 時(shí)間: 2025-3-29 17:04 作者: Invertebrate 時(shí)間: 2025-3-29 22:15 作者: CHASM 時(shí)間: 2025-3-30 02:46
Carbon Nanotubes as Microbumps for 3D Integration enabling future electronics to be consistent with future component, system, and circuit board (or global-level) requirements. Moreover, assembly approaches are moving toward heterogeneous three-dimensional integrated circuits (3D ICs) with silicon via wafer thinning, bonding technologies, and 3D sy
