標(biāo)題: Titlebook: CMOS Processors and Memories; Krzysztof Iniewski Book 2010 Springer Science+Business Media B.V. 2010 CMOS.DRAM.FPGA.Field Programmable Gat [打印本頁(yè)] 作者: 獨(dú)裁者 時(shí)間: 2025-3-21 19:32
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作者: 執(zhí)拗 時(shí)間: 2025-3-21 20:50 作者: elastic 時(shí)間: 2025-3-22 00:42 作者: 憤慨一下 時(shí)間: 2025-3-22 06:11 作者: 真繁榮 時(shí)間: 2025-3-22 09:32 作者: Forsake 時(shí)間: 2025-3-22 16:08
Tania Q. Vu,Sujata Sundara Rajan on low voltage operation and low energy dissipation. The circuits designed herein span from microcells (adders and some handcrafted asynchronous basic cells) and macrocells (a multiplier and a memory) to a complete 128-point radix-2 decimation-in-time Fast Fourier Transform/Inverse Fast Fourier Tra作者: Forsake 時(shí)間: 2025-3-22 18:29
From Nanotechnology to Nanoengineering,g a variety of disciplines. The field of digital integrated circuit design is one such discipline within which researchers are continually seeking ways of leveraging novel nanoscale technologies to develop next generation circuits and architectures. A major motivating factor for this research is the作者: 主動(dòng)脈 時(shí)間: 2025-3-22 22:58
https://doi.org/10.1007/978-1-4419-0062-3 for data storage have been industry-standard products by making the most of each feature, respectively. This chapter will mainly focus on these two types of Flash memory and compare from the view point of memory array architecture and operation schemes (Program, Erase and Read) with discussing reli作者: Encephalitis 時(shí)間: 2025-3-23 05:13
Nanotechnology for Defence Applications scales down, achieving fast nanosecond time scale magnetization switching and maintaining thermal stability at second to years time scale become increasingly challenging. At the same time, the increased variability due to device dimension shrinking results device performance degradation. In the cha作者: 變量 時(shí)間: 2025-3-23 06:15
Mayyadah S. Abed,Zeinab Abbas Jawadembedded DRAMs for the previous 15 years. It will then look into the principles of the embedded DRAMs, which include technology, macro and array architectures, mode of operations, wordline and bitline architectures, and sensing schemes. The discussion will also address ideas unique to the high-perfo作者: SEMI 時(shí)間: 2025-3-23 10:38
Bartosz Such,Franciszek Krok,Marek Szymonskirial, operating principle, and current status of FeRAMs and chain FeRAMs are introduced. Second, several key techniques to achieve stable FeRAM operation and realize FeRAM scaling are described: (1) the scaling techniques to reduce bitline capacitance to obtain sufficient cell signal in scaled FeRAM作者: evasive 時(shí)間: 2025-3-23 17:11 作者: Cantankerous 時(shí)間: 2025-3-23 18:22 作者: 迫擊炮 時(shí)間: 2025-3-23 23:23
1872-082X of top industrial experts and key academic professors. Pract.CMOS Processors and Memories. addresses the-state-of-the-art in integrated circuit design in the context of emerging computing systems. New design opportunities in memories and processor are discussed. Emerging materials that can take syst作者: cunning 時(shí)間: 2025-3-24 03:30
https://doi.org/10.1007/978-1-4419-0062-3ypes of Flash memory and compare from the view point of memory array architecture and operation schemes (Program, Erase and Read) with discussing reliability issues and cell scaling issues for next generation Flash technology.作者: 其他 時(shí)間: 2025-3-24 08:08 作者: Genistein 時(shí)間: 2025-3-24 11:08 作者: 新義 時(shí)間: 2025-3-24 17:32
Mayyadah S. Abed,Zeinab Abbas Jawad cache prototype designs for microprocessors. To conclude the chapter research, and development for future embedded DRAM with floating body cell, gain cell, and 3-dimensional embedded DRAM approach will be explored.作者: Morbid 時(shí)間: 2025-3-24 21:59 作者: 先兆 時(shí)間: 2025-3-25 01:31 作者: RENAL 時(shí)間: 2025-3-25 07:21
Book 2010portunities in memories and processor are discussed. Emerging materials that can take system performance beyond standard CMOS, like carbon nanotubes, graphene, ferroelectrics and tunnel junctions are explored.. .CMOS Processors and Memories. is divided into two parts: processors and memories. In the作者: 排名真古怪 時(shí)間: 2025-3-25 09:11
Book 2010e framework. This particular methodology involves: analyzing the computational cost and exploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures...The secon作者: 我要威脅 時(shí)間: 2025-3-25 14:21
Design of High Performance Low Power Microprocessors作者: mechanical 時(shí)間: 2025-3-25 18:57
Towards High-Performance and Energy-Efficient Multi-core Processors作者: 獨(dú)裁政府 時(shí)間: 2025-3-25 22:35 作者: 撕裂皮肉 時(shí)間: 2025-3-26 03:08
CMOS-based Spin-Transfer Torque Magnetic Random Access Memory (ST–MRAM)作者: CIS 時(shí)間: 2025-3-26 06:51 作者: Stress-Fracture 時(shí)間: 2025-3-26 10:47
Magnetization Switching in Spin Torque Random Access Memory: Challenges and Opportunitiesors from nano-second to second region are measured and modeled. Microscopic quantum electronic spin transport model and macroscopic stochastic magnetization dynamics model are combined to study spin torque induced magnetization switching. Coupled micro-magnetic model and dynamic circuit model are us作者: 寵愛(ài) 時(shí)間: 2025-3-26 15:10
1872-082X ploring candidate hardware components, proposing various custom architectures using both traditional CMOS and hybrid nanotechnology CMOL. The first part concludes with hybrid CMOS-Nano architectures...The secon978-94-007-3304-6978-90-481-9216-8Series ISSN 1872-082X Series E-ISSN 2197-1854 作者: 有抱負(fù)者 時(shí)間: 2025-3-26 18:58 作者: connoisseur 時(shí)間: 2025-3-26 23:00 作者: Acetabulum 時(shí)間: 2025-3-27 03:11
Low Power Asynchronous Circuit Design: An FFT/IFFT Processor on low voltage operation and low energy dissipation. The circuits designed herein span from microcells (adders and some handcrafted asynchronous basic cells) and macrocells (a multiplier and a memory) to a complete 128-point radix-2 decimation-in-time Fast Fourier Transform/Inverse Fast Fourier Tra作者: Esalate 時(shí)間: 2025-3-27 06:59
A Hybrid CMOS-Nano FPGA Based on Majority Logic: From Devices to Architectureg a variety of disciplines. The field of digital integrated circuit design is one such discipline within which researchers are continually seeking ways of leveraging novel nanoscale technologies to develop next generation circuits and architectures. A major motivating factor for this research is the作者: travail 時(shí)間: 2025-3-27 13:30
Flash Memory for data storage have been industry-standard products by making the most of each feature, respectively. This chapter will mainly focus on these two types of Flash memory and compare from the view point of memory array architecture and operation schemes (Program, Erase and Read) with discussing reli作者: collagenase 時(shí)間: 2025-3-27 16:43
Magnetization Switching in Spin Torque Random Access Memory: Challenges and Opportunities scales down, achieving fast nanosecond time scale magnetization switching and maintaining thermal stability at second to years time scale become increasingly challenging. At the same time, the increased variability due to device dimension shrinking results device performance degradation. In the cha作者: 策略 時(shí)間: 2025-3-27 21:15 作者: musicologist 時(shí)間: 2025-3-28 01:29
Overview and Scaling Prospect of Ferroelectric Memoriesrial, operating principle, and current status of FeRAMs and chain FeRAMs are introduced. Second, several key techniques to achieve stable FeRAM operation and realize FeRAM scaling are described: (1) the scaling techniques to reduce bitline capacitance to obtain sufficient cell signal in scaled FeRAM作者: Rankle 時(shí)間: 2025-3-28 05:00
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