標題: Titlebook: Beyond Si-Based CMOS Devices; Materials to Archite Sangeeta Singh,Shashi Kant Sharma,Durgesh Nandan Book 2024 The Editor(s) (if applicable) [打印本頁] 作者: 方面 時間: 2025-3-21 19:37
書目名稱Beyond Si-Based CMOS Devices影響因子(影響力)
書目名稱Beyond Si-Based CMOS Devices影響因子(影響力)學科排名
書目名稱Beyond Si-Based CMOS Devices網(wǎng)絡公開度
書目名稱Beyond Si-Based CMOS Devices網(wǎng)絡公開度學科排名
書目名稱Beyond Si-Based CMOS Devices被引頻次
書目名稱Beyond Si-Based CMOS Devices被引頻次學科排名
書目名稱Beyond Si-Based CMOS Devices年度引用
書目名稱Beyond Si-Based CMOS Devices年度引用學科排名
書目名稱Beyond Si-Based CMOS Devices讀者反饋
書目名稱Beyond Si-Based CMOS Devices讀者反饋學科排名
作者: 最高點 時間: 2025-3-21 22:09
M. Witko,R. Tokarz-Sobieraj,R. Grybo?ese applications have been made possible by scaling thanks to improvements in complexity and performance. In order to increase the historical cadence of integrated circuit scaling as dimensional scaling of CMOS inevitably approaches fundamental constraints, a number of pioneering and advancement of 作者: 尾巴 時間: 2025-3-22 01:15 作者: 音樂會 時間: 2025-3-22 08:35 作者: Brain-Waves 時間: 2025-3-22 10:17
David A. Case,Louis Noodleman,Jian Lianical properties is grabbing worldwide market in the area of electronics, home appliances and medical field. The present book chapter emphasizes on graphene-based field effect transistor devices towards different applications. It comprehensively reviewed the synthesis of graphene, properties of gra作者: 一起平行 時間: 2025-3-22 14:28
Metal-Ligand Interactions in Cu-Proteins,ces and energy production. The number of devices that focus on non-graphene monolayers has significantly increased due to the novel characteristics and applications arising from two-dimensional confinement. An attempt has been made here to comprehensively describe the present state of the technology作者: anthesis 時間: 2025-3-22 19:36 作者: fatuity 時間: 2025-3-23 00:41
Concepts in Heterogeneous Catalysis,s, and short-channel effects are responsible toward the degradation of the MOS devices. At this point of time, a device which exhibits low leakage and low subthreshold swing is much needed, and tunnel field-effect transistors (TFETs) reported to be a suitable alternative to MOSFETs. TFETs basically 作者: 可互換 時間: 2025-3-23 02:22
https://doi.org/10.1007/978-94-011-2822-3ve capacitance (NC) into their design. Negative capacitance field-effect transistor (NCFET) is quickly becoming a popular alternative technology that promises to increase the power efficiency of transistors by many times while still being compatible with the current CMOS fabrication method. The tran作者: Longitude 時間: 2025-3-23 06:53 作者: Minatory 時間: 2025-3-23 13:44 作者: 謙卑 時間: 2025-3-23 15:23 作者: Mawkish 時間: 2025-3-23 18:32 作者: 代理人 時間: 2025-3-23 22:18 作者: 直言不諱 時間: 2025-3-24 03:07 作者: inhibit 時間: 2025-3-24 07:31 作者: 正式演說 時間: 2025-3-24 12:25 作者: assent 時間: 2025-3-24 16:00 作者: Hdl348 時間: 2025-3-24 21:24
Beyond Si-Based CMOS Devices: Needs, Opportunities, and Challengesnd the field of nano-electronics once CMOS scaling is achieved. The main objective of proposed chapter is to explore, evaluate, and scale practical developing facilities and new architectural approaches in terms of their long-term potential and scientific maturity, as well as to identify logical and作者: 食物 時間: 2025-3-25 03:03
Nanowire-Based Si-CMOS DevicesMOS devices and their profound impact on the future of semiconductor technology. As researchers continue to pioneer advancements in nanowire fabrication and integration, we anticipate that these innovative devices will usher in transformative changes across various industries. This transformation is作者: 拖債 時間: 2025-3-25 06:17
Other Potential 2-D Materials for CMOS Applicationsether with an overview of the structural and physical characteristics of 2D materials. By leveraging the novel qualities resulting from these materials, state-of-the-art applications are also summarized. Such devices would drastically lower device dimensions as well as power consumption, which is re作者: unstable-angina 時間: 2025-3-25 10:38 作者: 致敬 時間: 2025-3-25 13:36 作者: intercede 時間: 2025-3-25 19:19 作者: 伙伴 時間: 2025-3-25 22:29 作者: 侵害 時間: 2025-3-26 03:14 作者: 發(fā)微光 時間: 2025-3-26 07:23 作者: RAG 時間: 2025-3-26 12:13
Julius Jellinek,Paulo H. AcioliMOS devices and their profound impact on the future of semiconductor technology. As researchers continue to pioneer advancements in nanowire fabrication and integration, we anticipate that these innovative devices will usher in transformative changes across various industries. This transformation is作者: wall-stress 時間: 2025-3-26 15:23 作者: 未開化 時間: 2025-3-26 18:18
Metal-Ligand Interactions in Cu-Proteins,election and thorough characterization to ensure compatibility with Si-CMOS devices. It further examines the existing technology landscape, identifying challenges in research and development. Additionally, the chapter outlines potential directions for advancements in this promising field, providing 作者: Recessive 時間: 2025-3-26 23:44 作者: 郊外 時間: 2025-3-27 02:24 作者: 江湖騙子 時間: 2025-3-27 06:56
Gongcheng Yao,Shuaihang Pan,Xiaochun Liice design, this chapter promotes a multidisciplinary and cooperative approach. It offers practitioners, engineers, and academics a framework for guidance and important insights into the complexities of semiconductor innovation.作者: PHIL 時間: 2025-3-27 13:20
Simona E. Hunyadi Murph,Alexandra Goriounovas, with a particular emphasis on resistive random-access memory. This article includes a review of recent developments in the design of RRAM-based neuromorphic computing circuits inspired by the human brain.作者: 寡頭政治 時間: 2025-3-27 14:20
Beyond Si-Based CMOS Devices: Needs, Opportunities, and Challengesese applications have been made possible by scaling thanks to improvements in complexity and performance. In order to increase the historical cadence of integrated circuit scaling as dimensional scaling of CMOS inevitably approaches fundamental constraints, a number of pioneering and advancement of 作者: Indelible 時間: 2025-3-27 18:51
Nanowire-Based Si-CMOS Devicesr delves into the intricate processes and technologies involved in creating silicon nanowires and seamlessly integrating them into CMOS devices. The discussions encompass various aspects, including growth techniques, patterning methods, doping processes, and integration considerations. Silicon nanow作者: senile-dementia 時間: 2025-3-27 22:13
Carbon Nanotube FETS: An Alternative for Beyond Si Devicesolution to lower fabrication costs and enables further device size scaling in the midst of current nanotechnology research and development. Modern integrated systems mostly consist of copper/aluminum cables and silicon-based transistors. These transistors and wires might both be changed to carbon na作者: 邊緣帶來墨水 時間: 2025-3-28 05:13 作者: 愛哭 時間: 2025-3-28 08:39 作者: MONY 時間: 2025-3-28 13:04 作者: 妨礙議事 時間: 2025-3-28 17:13 作者: 依法逮捕 時間: 2025-3-28 21:29
Negative Capacitance Field-Effect Transistor (NCFET): Strong Beyond CMOS Deviceve capacitance (NC) into their design. Negative capacitance field-effect transistor (NCFET) is quickly becoming a popular alternative technology that promises to increase the power efficiency of transistors by many times while still being compatible with the current CMOS fabrication method. The tran作者: CRASS 時間: 2025-3-29 02:30 作者: Contracture 時間: 2025-3-29 05:06 作者: 急急忙忙 時間: 2025-3-29 08:43
Feedback Field-Effect Transistors/Zero Subthreshold Swing and Zero Impact Ionization FETy states of the potential barrier and wall. This positive feedback mechanism results in notable characteristics for FBFETs, including an impressive subthreshold swing of approximately 0?mV/decade at 300?K, a high on-/off-current ratio of around 10^10, and a well-defined saturation region. The power 作者: RECUR 時間: 2025-3-29 13:24
Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device suggested to improve their performance. Theoretically, steep-slope devices may allow low-voltage operation with acceptable leakage current by switching from the off to on state with a smaller change in gate voltage. This chapter includes ReFET that has been identified as a developing field-effect t作者: 密碼 時間: 2025-3-29 19:27 作者: 指令 時間: 2025-3-29 22:03 作者: scotoma 時間: 2025-3-30 02:37 作者: 脫水 時間: 2025-3-30 06:04 作者: 萬神殿 時間: 2025-3-30 09:48 作者: ETCH 時間: 2025-3-30 12:22 作者: 打火石 時間: 2025-3-30 19:33
