標(biāo)題: Titlebook: Boron and Refractory Borides; Vlado I. Matkovich Book 1977 Springer-Verlag Berlin Heidelberg 1977 Beryllium.alkali metal.boron.carbon.chem [打印本頁(yè)] 作者: 從未迷惑 時(shí)間: 2025-3-21 16:42
書(shū)目名稱(chēng)Boron and Refractory Borides影響因子(影響力)
書(shū)目名稱(chēng)Boron and Refractory Borides影響因子(影響力)學(xué)科排名
書(shū)目名稱(chēng)Boron and Refractory Borides網(wǎng)絡(luò)公開(kāi)度
書(shū)目名稱(chēng)Boron and Refractory Borides網(wǎng)絡(luò)公開(kāi)度學(xué)科排名
書(shū)目名稱(chēng)Boron and Refractory Borides被引頻次
書(shū)目名稱(chēng)Boron and Refractory Borides被引頻次學(xué)科排名
書(shū)目名稱(chēng)Boron and Refractory Borides年度引用
書(shū)目名稱(chēng)Boron and Refractory Borides年度引用學(xué)科排名
書(shū)目名稱(chēng)Boron and Refractory Borides讀者反饋
書(shū)目名稱(chēng)Boron and Refractory Borides讀者反饋學(xué)科排名
作者: BUDGE 時(shí)間: 2025-3-21 21:55 作者: Measured 時(shí)間: 2025-3-22 02:54 作者: SEMI 時(shí)間: 2025-3-22 05:22 作者: 最后一個(gè) 時(shí)間: 2025-3-22 12:04
to assemble a review of boron and refractory borides by the specialists present. The advantages of such a work were immediately apparent. Such diverse applications of borides as in protective armor, nuclear reactors, coat- ings, reinforcement, etc. can hardly all be presented in sufficient detail b作者: 愛(ài)管閑事 時(shí)間: 2025-3-22 15:14 作者: landmark 時(shí)間: 2025-3-22 17:12
Characterization of the Logistics Conceptionresponsible for the occurrence of the three-dimensional structure. Only two families of boron-rich borides have structures based on the B. octahedron: the CaB.-type hexaborides and the ThB.-type tetraborides.作者: 免費(fèi) 時(shí)間: 2025-3-22 22:00
Introductionas in protective armor, nuclear reactors, coatings, reinforcement, etc. can hardly all be presented in sufficient detail by a single author. On the other hand it was also recognized that with so much specialization, some areas of interest may not be covered.作者: aerobic 時(shí)間: 2025-3-23 03:35 作者: MAIM 時(shí)間: 2025-3-23 06:21 作者: AMITY 時(shí)間: 2025-3-23 10:35
Inventory Management (Stockkeeping)res exist also in some boron-rich compounds containing metals and non-metals. In this Section, therefore, tetragonal boron-I is discussed together with some borides of beryllium, aluminum and carbon which are built on the same structural principle.作者: 一起 時(shí)間: 2025-3-23 17:30
Tetragonal Boron-I and Its Derivativesres exist also in some boron-rich compounds containing metals and non-metals. In this Section, therefore, tetragonal boron-I is discussed together with some borides of beryllium, aluminum and carbon which are built on the same structural principle.作者: 繁榮中國(guó) 時(shí)間: 2025-3-23 18:17
Logistics Outsourcing RelationshipsThe character of the chemical bond between the atoms of a compound depends on its electronic structure.作者: mortgage 時(shí)間: 2025-3-23 22:46
https://doi.org/10.1007/978-3-658-42837-2It is known that hopping conductivity is one of the main physical features of many low mobility materials. Hopping conduction, in contrast to the more common zonic type, is the movement of the charge carriers (electron or hole) by a series of successive hops from one local level to another.作者: photopsia 時(shí)間: 2025-3-24 04:09 作者: 狗舍 時(shí)間: 2025-3-24 07:44 作者: 尊嚴(yán) 時(shí)間: 2025-3-24 14:21 作者: BIAS 時(shí)間: 2025-3-24 15:00
https://doi.org/10.1007/3-540-27516-9The first attempts to prepare compounds of boron with carbon were described by Muhlhauser (1894), Moissan (1899) and Podszus (1933). The products obtained were attributed to compositions of BC, B.C., B.C, B.C and B.C. The results were based on bulk chemical analysis only.作者: 鞠躬 時(shí)間: 2025-3-24 20:32 作者: 流眼淚 時(shí)間: 2025-3-24 23:58
II. The Nature of the Chemical Bond in BoridesThe character of the chemical bond between the atoms of a compound depends on its electronic structure.作者: CLAM 時(shí)間: 2025-3-25 06:59 作者: 不適當(dāng) 時(shí)間: 2025-3-25 09:29
Chemical Properties of BoronIt is impossible to describe in detail the chemical properties of elementary boron in a few pages. The object of this article is to give general information. A more complete study of the reactions of boron with the other elements of the periodic table is presented in Chapters C VI-XIII of this volume.作者: Epidural-Space 時(shí)間: 2025-3-25 11:53
Methods of Preparation of Amorphous BoronPreparation of pure elemental boron presents certain difficulties. The conditions necessary for its preparation must be carefully main tained because boron reacts strongly with many substances at high temperatures required for reduction of its compounds. Any by-products formed during the reduction are difficult to separate.作者: Deject 時(shí)間: 2025-3-25 18:36
Characterization of Localized States in β-Rhombohedral BoronBoron is an elemental semiconductor with very fascinating properties, namely low density, high melting point (2300°C), a hardness close to that of diamond and remarkable mechanical and nuclear properties.作者: CRATE 時(shí)間: 2025-3-25 22:08
Borides of the IVb GroupThe first attempts to prepare compounds of boron with carbon were described by Muhlhauser (1894), Moissan (1899) and Podszus (1933). The products obtained were attributed to compositions of BC, B.C., B.C, B.C and B.C. The results were based on bulk chemical analysis only.作者: Conduit 時(shí)間: 2025-3-26 04:05
Borides of Group VIb ElementsReference is made in the literature to the following boron oxides: B.O, B.O., B.O, B.O, B.O, B.O., B.O, B.O., (BO)., B.O., B.O. and BO. Among these compounds only B.O. has been investigated in detail, while no data are available in the recent literature on the existence of B.O, B.O, B.O., B.O., and B.O..作者: Extricate 時(shí)間: 2025-3-26 08:23 作者: 健談 時(shí)間: 2025-3-26 12:24
https://doi.org/10.1007/978-3-7908-1938-0 various compounds clears the way for further progress not only in theory but also in material manufacture. It is thus natural that simultaneously with the investigation of physico-chemical properties of borides, scientists should also investigate their electronic structure models.作者: POLYP 時(shí)間: 2025-3-26 12:42
https://doi.org/10.1007/978-3-658-42837-2ization of the stability of these materials as well as the metal-deficient and mixed-metal phases. Band structure and density-of-states calculations lead to values of electrical conductivities and Hall coefficients for these materials which agree well with experimental data.作者: vascular 時(shí)間: 2025-3-26 18:07 作者: 平 時(shí)間: 2025-3-27 00:28
Characterization of the Logistics Conceptionthose in which boron atoms occupy the twelve vertices of an icosahedron or cubo-octahedron are the most common, although an octahedral unit consisting of six boron atoms at the vertices is well known and is characteristic of the hexaborides and tetraborides. This review is concerned with establishin作者: 玩忽職守 時(shí)間: 2025-3-27 01:51 作者: HUMID 時(shí)間: 2025-3-27 05:21 作者: 颶風(fēng) 時(shí)間: 2025-3-27 12:29
Characterization of the Logistics Conceptionds with atoms of the same octahedron and the fifth one points outwards along one of the A. axes of the octahedron. The presence of this fifth bond is responsible for the occurrence of the three-dimensional structure. Only two families of boron-rich borides have structures based on the B. octahedron:作者: 暫時(shí)別動(dòng) 時(shí)間: 2025-3-27 16:04 作者: Fecundity 時(shí)間: 2025-3-27 18:09
https://doi.org/10.1007/3-540-27516-9d red boron crystals in the deposit formed under the pyrolysis of boron triiodide. However, as DECKER and KASPER (1959) stated, α-boron had earlier been prepared by the decomposition of boron hydride and had also been found in some commercially prepared boron samples.作者: 美學(xué) 時(shí)間: 2025-3-27 22:03
https://doi.org/10.1007/3-540-27516-9 boron by reduction of several boron compounds (boron oxide, boron fluoride and fluoborates by alkali metals) (Gay-Lussac and Thénard, 1808; Davy, 1811; W?hler and Sainte-Claire Deville, 1858; Rawson, 1888).作者: 拘留 時(shí)間: 2025-3-28 04:39 作者: nauseate 時(shí)間: 2025-3-28 09:33 作者: 橢圓 時(shí)間: 2025-3-28 12:44
https://doi.org/10.1007/978-3-658-42837-2ization of the stability of these materials as well as the metal-deficient and mixed-metal phases. Band structure and density-of-states calculations lead to values of electrical conductivities and Hall coefficients for these materials which agree well with experimental data.作者: 抓住他投降 時(shí)間: 2025-3-28 14:38 作者: 是突襲 時(shí)間: 2025-3-28 21:51
https://doi.org/10.1007/3-540-27516-9 boron by reduction of several boron compounds (boron oxide, boron fluoride and fluoborates by alkali metals) (Gay-Lussac and Thénard, 1808; Davy, 1811; W?hler and Sainte-Claire Deville, 1858; Rawson, 1888).作者: 審問(wèn) 時(shí)間: 2025-3-29 00:24
http://image.papertrans.cn/b/image/189896.jpg作者: 安心地散步 時(shí)間: 2025-3-29 04:12
https://doi.org/10.1007/978-3-642-66620-9Beryllium; alkali metal; boron; carbon; chemical bond; chemistry; crystal; development; metals; nuclear react作者: Muffle 時(shí)間: 2025-3-29 08:53
978-3-642-66622-3Springer-Verlag Berlin Heidelberg 1977作者: Spinal-Tap 時(shí)間: 2025-3-29 13:01
The Electronic Structure of Boron Compounds various compounds clears the way for further progress not only in theory but also in material manufacture. It is thus natural that simultaneously with the investigation of physico-chemical properties of borides, scientists should also investigate their electronic structure models.作者: Exonerate 時(shí)間: 2025-3-29 16:00 作者: Proponent 時(shí)間: 2025-3-29 22:52
Methods of Preparation of α-Rhombohedral Borond red boron crystals in the deposit formed under the pyrolysis of boron triiodide. However, as DECKER and KASPER (1959) stated, α-boron had earlier been prepared by the decomposition of boron hydride and had also been found in some commercially prepared boron samples.作者: Oversee 時(shí)間: 2025-3-30 00:15
Alkali Metal Borides boron by reduction of several boron compounds (boron oxide, boron fluoride and fluoborates by alkali metals) (Gay-Lussac and Thénard, 1808; Davy, 1811; W?hler and Sainte-Claire Deville, 1858; Rawson, 1888).作者: 貴族 時(shí)間: 2025-3-30 07:23 作者: 偽善 時(shí)間: 2025-3-30 12:11 作者: WATER 時(shí)間: 2025-3-30 14:13
https://doi.org/10.1007/978-3-662-03956-4ental boron. Although these materials have low purity, they are easily prepared, and their purity can be greatly improved by outgasing in high vacuum and at a temperature near to the melting point of boron.作者: palette 時(shí)間: 2025-3-30 18:12
Book 1977ed up to the present. Ap- plication of flakes and films for two-dimensional reinforcement appears attractive, although the high cost of materials and development repre- sents a considerable barrier. A number of borides have been used to manufacture lightweight protec- tive armor. In this area relati作者: 密切關(guān)系 時(shí)間: 2025-3-31 00:30
established up to the present. Ap- plication of flakes and films for two-dimensional reinforcement appears attractive, although the high cost of materials and development repre- sents a considerable barrier. A number of borides have been used to manufacture lightweight protec- tive armor. In this area relati978-3-642-66622-3978-3-642-66620-9作者: echnic 時(shí)間: 2025-3-31 00:51
Electron Paramagnetic Resonance (EPR) in Boron Nitride, Boron and Boron Carbideumination gives some insight into the interaction between the spin-carrying centers (Sects. 3 and 4). EPR in boron carbide (Geist, 1964a) is similar to that in boron (Sect. 5); combined measurements of electrical conductivity, EPR intensity and Hall coefficient show some correlation between these pr作者: conformity 時(shí)間: 2025-3-31 06:25
Crystal Chemistry of Higher Boridesographic sites leading to multiple stoichiometries within the same B. framework may also confuse the stoichiometries of these structures. In the light of these potential complications it becomes even more urgent that the crystal chemistry of the higher borides be expressed in a uniform and consisten作者: URN 時(shí)間: 2025-3-31 10:22
Crystal Chemistry of Boron and of Some Boron-Rich Phases; Preparation of Boron Modificationsental boron. Although these materials have low purity, they are easily prepared, and their purity can be greatly improved by outgasing in high vacuum and at a temperature near to the melting point of boron.作者: Rodent 時(shí)間: 2025-3-31 15:11
Introductionoron and refractory borides by the specialists present. The advantages of such a work were immediately apparent. Such diverse applications of borides as in protective armor, nuclear reactors, coatings, reinforcement, etc. can hardly all be presented in sufficient detail by a single author. On the ot作者: 縱欲 時(shí)間: 2025-3-31 20:23 作者: nepotism 時(shí)間: 2025-3-31 21:43
The Electronic Structures of the Hexaborides and the Diboridesization of the stability of these materials as well as the metal-deficient and mixed-metal phases. Band structure and density-of-states calculations lead to values of electrical conductivities and Hall coefficients for these materials which agree well with experimental data.作者: condemn 時(shí)間: 2025-4-1 03:16 作者: ARK 時(shí)間: 2025-4-1 09:40
Structural Determinants in the Higher Boridesthose in which boron atoms occupy the twelve vertices of an icosahedron or cubo-octahedron are the most common, although an octahedral unit consisting of six boron atoms at the vertices is well known and is characteristic of the hexaborides and tetraborides. This review is concerned with establishin作者: 潛移默化 時(shí)間: 2025-4-1 13:58
Crystal Chemistry of Higher Boridesdered array of interstitial openings. When any of these sites is fully accupied by interstitial atoms, stoichiometries are obtained with integral atomic ratios. With this in mind, an attempt has been made in earlier publications to group the higher borides into isotypic series (Matkovich, 1961; Econ作者: 絕緣 時(shí)間: 2025-4-1 18:05 作者: 優(yōu)雅 時(shí)間: 2025-4-1 20:21
Compounds Based on Octahedral B6 Units: Hexaborides and Tetraboridesds with atoms of the same octahedron and the fifth one points outwards along one of the A. axes of the octahedron. The presence of this fifth bond is responsible for the occurrence of the three-dimensional structure. Only two families of boron-rich borides have structures based on the B. octahedron:
