標(biāo)題: Titlebook: Boron Synthesis, Structure, and Properties; Proceedings of the C J. A. Kohn,W. F. Nye,G. K. Gaulé Conference proceedings 1960 Springer Scie [打印本頁] 作者: 技巧 時(shí)間: 2025-3-21 16:53
書目名稱Boron Synthesis, Structure, and Properties影響因子(影響力)
書目名稱Boron Synthesis, Structure, and Properties影響因子(影響力)學(xué)科排名
書目名稱Boron Synthesis, Structure, and Properties網(wǎng)絡(luò)公開度
書目名稱Boron Synthesis, Structure, and Properties網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Boron Synthesis, Structure, and Properties被引頻次
書目名稱Boron Synthesis, Structure, and Properties被引頻次學(xué)科排名
書目名稱Boron Synthesis, Structure, and Properties年度引用
書目名稱Boron Synthesis, Structure, and Properties年度引用學(xué)科排名
書目名稱Boron Synthesis, Structure, and Properties讀者反饋
書目名稱Boron Synthesis, Structure, and Properties讀者反饋學(xué)科排名
作者: 桉樹 時(shí)間: 2025-3-21 21:32 作者: 吸引人的花招 時(shí)間: 2025-3-22 04:15 作者: 你敢命令 時(shí)間: 2025-3-22 07:51
Growth of Boron Crystals by the Czochralski and Floating-Zone Methods, impurities had segregation coefficients less than unity. The concentration of magnesium decreased toward the lower end of the bar. Electrical measurements made on the zoned bars showed that the resistivity ranged from 10. to 10. ohm-cm, decreasing toward the bottom portion of the bar. Small monocry作者: mastoid-bone 時(shí)間: 2025-3-22 12:19 作者: 把…比做 時(shí)間: 2025-3-22 15:43 作者: GRATE 時(shí)間: 2025-3-22 18:17
Bernd Hillebrand,Grigory Pishchulovhe three modifications established by single crystal data there are several other claimants to recognition. The multiplication of structural variants at lower temperatures probably is dictated by kinetic rather than thermodynamic factors. It is suggested that boron prepared by deposition onto heated作者: Mingle 時(shí)間: 2025-3-22 23:26 作者: bronchodilator 時(shí)間: 2025-3-23 02:30
Izabela Kudelska,Monika Kosacka-Olejnik crystal bars of boron of small diameter could be deposited on a straight tantalum filament in such a manner that the tantalum filament could be subsequently pulled from the deposit upon cooling, leaving the small crystal bar intact. The deposited boron bar was introduced directly into the floating-作者: dissolution 時(shí)間: 2025-3-23 09:23 作者: 有斑點(diǎn) 時(shí)間: 2025-3-23 12:03
Sama Gad,Khaled Hanafy,Sara Elzarka lb/in.., respectively). The density was determined by a flotation technique and found to be 2.354 ±0.005 gm/cm.. This material is very hard, as evidenced by its ability to scratch sapphire..Amorphous boron exhibits a relatively high resistivity and high negative temperature coefficient of electrica作者: 表皮 時(shí)間: 2025-3-23 16:52
Contributions to Management Sciencehe structure was that described by Sands and Hoard [2], rhombohedral with 107 or 108 atoms in the unit cell..The electrical resistivities of two coarsely crystalline specimens of zone-melted boron were identical to those of vapor-deposited boron in the intrinsic conductivity range, but were slightly作者: Bereavement 時(shí)間: 2025-3-23 18:34 作者: 喚醒 時(shí)間: 2025-3-24 01:56 作者: 五行打油詩 時(shí)間: 2025-3-24 06:03
https://doi.org/10.1007/978-3-319-38836-6rown on a tantalum wire at 1500°C. Boron diffusion into the wire at this temperature was serious. B.C crystals up to 1 mm in diameter were grown on a graphite disk heated to 2000°C. Infrared transmission, resistivity, and hardness tests were made on the samples.作者: 刺耳的聲音 時(shí)間: 2025-3-24 08:25 作者: 高度贊揚(yáng) 時(shí)間: 2025-3-24 11:07 作者: Irritate 時(shí)間: 2025-3-24 16:04 作者: 定點(diǎn) 時(shí)間: 2025-3-24 21:58 作者: Opponent 時(shí)間: 2025-3-25 01:11 作者: Ballerina 時(shí)間: 2025-3-25 07:18 作者: Adherent 時(shí)間: 2025-3-25 10:54
Jan Müller,André Wenzel,Rainer Laschtely 300 lb per month on continuous operation. The product averaged 96–98% boron and contained 1–3% carbon with minor amounts of iron and silicon..The central item of equipment comprised six 2 — in. -diam graphite rods, 4 ft long, which were mounted vertically, connected in series, and heated to a t作者: nonplus 時(shí)間: 2025-3-25 14:08 作者: chalice 時(shí)間: 2025-3-25 18:20
https://doi.org/10.1007/978-3-319-38836-6 (2) upgrading the Moissan boron to 95% B by heating with fluorides, and (3) heating the upgraded boron by radiation in a vacuum. The latter step is accomplished by cold-pressing the powder into rings, stacking the rings to form a hollow cylinder, and heating in excess of 2000°C by means of a resist作者: 出價(jià) 時(shí)間: 2025-3-25 23:53
https://doi.org/10.1007/978-3-319-38836-6rown on a tantalum wire at 1500°C. Boron diffusion into the wire at this temperature was serious. B.C crystals up to 1 mm in diameter were grown on a graphite disk heated to 2000°C. Infrared transmission, resistivity, and hardness tests were made on the samples.作者: 能量守恒 時(shí)間: 2025-3-26 00:34
Izabela Kudelska,Monika Kosacka-Olejnik obtained with boron and tantalum filaments. Boron crystal deposits 2 cm in diameter and 15 cm in length were deposited on small, vertical boron filaments..Two types of boron filaments were investigated, including (a) small bars grown by the Czochralski process from boron nitride containers and (b) 作者: 揉雜 時(shí)間: 2025-3-26 06:47 作者: Mhc-Molecule 時(shí)間: 2025-3-26 12:27 作者: faddish 時(shí)間: 2025-3-26 12:51
Ahmad E. Alozn,Moza S. Al Naimi,Omar Y. Asad to 1200°C..The unit cell is tetragonal; cell dimensions are: . = 10.12 A, . = 14.14 A. The measured density is 2.364 ± 0.005 g/cm., indicating that the unit cell contains 192 boron atoms, possibly arranged at the vertices of 16 icosahedra..Recent work with this phase indicates that the modification作者: jaundiced 時(shí)間: 2025-3-26 18:40
Bart?omiej G?adysz,Krzysztof Santarekseries of binary rare earth (and yttrium) for ides corresponding to the formula MB...The MB. preparation is isostructural with the previously reported UB. and ZrB.. The unit cell is face-centered cubic with four formula weights per unit cell..Details of lattice constants and structures are discussed作者: 蒼白 時(shí)間: 2025-3-26 22:41 作者: meditation 時(shí)間: 2025-3-27 04:46
Contributions to Management Sciencest partially decomposed by heating to 300°C. Subsequently, heating to 600°C completely decomposed the boric acid to boron trioxide, which formed a liquid coating on the particles and after cooling strongly bonded the compact. One end of the compact was fitted into a graphite cup, which was used to h作者: 思考而得 時(shí)間: 2025-3-27 06:55
Methodology and sample characteristics,mple rhombohedral boron has been crystallized from platinum melts. The necessary conditions are indicated. Some preliminary electrical and optical results for boron in the simple rhombohedral form are discussed and compared with results for boron that has been melted.作者: Hypomania 時(shí)間: 2025-3-27 11:53
Contributions to Management Scienceproximately 5 mm × 0.1 mm × 0.1 mm. Penetration twinning and growth steps at one end of a crystal were detected in some cases. These boron needles were characterized by smooth lateral faces of high reflectivity. Thin lathlike red crystals of AlB. were prepared from the elements at reduced pressure..作者: LEVER 時(shí)間: 2025-3-27 15:44
https://doi.org/10.1007/978-3-7908-1938-0modified floating-zone process. Silicon is the prevalent impurity in the end product, which was polycrystalline and had large crystallites. The resistivity of purest material was 4 · 10. ohm -cm at room temperature, and 5 · 10. ohm-cm at 1950°C; the intrinsic ionization energy was 1.5 ev. Doped mate作者: Detoxification 時(shí)間: 2025-3-27 20:22
Methodology and sample characteristics,that of Knoop-type micro-indentations. Data are presented for the (10.1) plane of boron, the (110), (101), and (221) planes of α-AlB., the (100–010),? (101–011),? and (201–021)? planes of β -AlB., the (100) plane of γ-AlB., the (010), (101), and (111) planes of A1B., the (00.1) plane of AlB., and al作者: vasculitis 時(shí)間: 2025-3-27 22:50
Preparation of Boron from Boron Carbide,ransfer. Boron of at least 99.8% purity can be made directly from technical-grade materials. Purity is a function of electrolysis voltages and boron carbide purity. Current efficiencies in excess of 95% are obtained and preferred electrolysis conditions are stated.作者: 使害怕 時(shí)間: 2025-3-28 03:33
Various Preparations of Elemental Boron,rown on a tantalum wire at 1500°C. Boron diffusion into the wire at this temperature was serious. B.C crystals up to 1 mm in diameter were grown on a graphite disk heated to 2000°C. Infrared transmission, resistivity, and hardness tests were made on the samples.作者: 動(dòng)機(jī) 時(shí)間: 2025-3-28 08:57 作者: 表示問 時(shí)間: 2025-3-28 10:47 作者: 與野獸博斗者 時(shí)間: 2025-3-28 17:11
,Simple Rhombohedral Boron—Preparation and Properties,mple rhombohedral boron has been crystallized from platinum melts. The necessary conditions are indicated. Some preliminary electrical and optical results for boron in the simple rhombohedral form are discussed and compared with results for boron that has been melted.作者: Debility 時(shí)間: 2025-3-28 22:12 作者: TIA742 時(shí)間: 2025-3-29 00:04
978-1-4899-6265-2Springer Science+Business Media New York 1960作者: Amenable 時(shí)間: 2025-3-29 03:04
Logistics Outsourcing RelationshipsSamples of crystalline boron were polished and reacted with various etchants. Several etching compositions are recommended because of the rather unusual reducing ability of boron.作者: DUST 時(shí)間: 2025-3-29 08:57
Some Etching Studies on Boron,Samples of crystalline boron were polished and reacted with various etchants. Several etching compositions are recommended because of the rather unusual reducing ability of boron.作者: GET 時(shí)間: 2025-3-29 14:31
Remarks on Structure and Polymorphism in Boron,. Half of the atoms in alpha-rhombohedral boron, the polymorph formed at lowest temperatures, are used in delta linkages between icosahedra, and the structure then satisfies the electron counting set by the essentially molecular Longuet-Higgins and Roberts bonding theory. More conventional and appar作者: 注意 時(shí)間: 2025-3-29 16:37 作者: 我不死扛 時(shí)間: 2025-3-29 23:04
The Manufacture of Boron,tely 300 lb per month on continuous operation. The product averaged 96–98% boron and contained 1–3% carbon with minor amounts of iron and silicon..The central item of equipment comprised six 2 — in. -diam graphite rods, 4 ft long, which were mounted vertically, connected in series, and heated to a t作者: packet 時(shí)間: 2025-3-30 01:34 作者: 草率女 時(shí)間: 2025-3-30 05:55
Preparation of Crystalline Boron, (2) upgrading the Moissan boron to 95% B by heating with fluorides, and (3) heating the upgraded boron by radiation in a vacuum. The latter step is accomplished by cold-pressing the powder into rings, stacking the rings to form a hollow cylinder, and heating in excess of 2000°C by means of a resist作者: MARS 時(shí)間: 2025-3-30 12:06
Various Preparations of Elemental Boron,rown on a tantalum wire at 1500°C. Boron diffusion into the wire at this temperature was serious. B.C crystals up to 1 mm in diameter were grown on a graphite disk heated to 2000°C. Infrared transmission, resistivity, and hardness tests were made on the samples.作者: 顯示 時(shí)間: 2025-3-30 13:16 作者: 填料 時(shí)間: 2025-3-30 18:30 作者: DEFT 時(shí)間: 2025-3-30 23:01
Crystallography of the Aluminum Borides,m those of boron and also the only phase whose structure is known. (3), (4), and (5) have common unit cell vectors which show that, as in boron carbide and the known forms of boron, boron icosahedra represent the major structural elements.作者: 頌揚(yáng)國(guó)家 時(shí)間: 2025-3-31 01:22
