標(biāo)題: Titlebook: Bismuth-Containing Compounds; Handong Li,Zhiming M. Wang Book 2013 Springer Science+Business Media New York 2013 Bismides.Bismuth (V) Cont [打印本頁] 作者: Monroe 時(shí)間: 2025-3-21 18:29
書目名稱Bismuth-Containing Compounds影響因子(影響力)
作者: 不合 時(shí)間: 2025-3-21 21:46
Dilute Bismuthides on an InP Platform,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping 作者: 典型 時(shí)間: 2025-3-22 01:48
Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate, by laser reflectometry using a 632.8 nm beam. High-resolution X-ray diffraction, secondary ion mass spectroscopy, photoluminescence, and photoreflectance spectroscopy have been used to characterize the obtained GaAsBi layers. In analyzing the surface morphology, atomic force microscopy and scanning作者: 卷發(fā) 時(shí)間: 2025-3-22 05:34 作者: projectile 時(shí)間: 2025-3-22 10:41
Localized States in GaAsBi and GaAs/GaAsBi Heterostructures,ave been proven to be smooth without distinct segregation and stable up to 700 °C. While the interface state density of ~9 × 10. cm. eV. in a GaAs/GaAs.Bi. heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface, presum作者: abracadabra 時(shí)間: 2025-3-22 14:06 作者: LIEN 時(shí)間: 2025-3-22 17:51 作者: 文藝 時(shí)間: 2025-3-23 00:29 作者: 事先無準(zhǔn)備 時(shí)間: 2025-3-23 05:03
Krankheiten der Verdauungsorgane,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping 作者: LARK 時(shí)間: 2025-3-23 07:52 作者: NIB 時(shí)間: 2025-3-23 12:37 作者: 倔強(qiáng)不能 時(shí)間: 2025-3-23 16:44
https://doi.org/10.1007/978-3-7091-7611-5ave been proven to be smooth without distinct segregation and stable up to 700 °C. While the interface state density of ~9 × 10. cm. eV. in a GaAs/GaAs.Bi. heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface, presum作者: HALL 時(shí)間: 2025-3-23 21:14
Die Krankheiten der Harnorgane, n-doped and p-doped silicon (111) substrates were determined by KPFM. Fermi level tuning of topological insulator nanoplates through substrates and doping were simultaneously investigated. These investigations may provide an effective route to investigate the electronic properties of topological in作者: 吃掉 時(shí)間: 2025-3-23 23:48
Book 2013conductor and thermoelectric materials that exploit the properties of Bismuth. Application areas for bismide materials include laser diodes for optical communications, DVD systems, light-emitting diodes, solar cells, transistors, quantum well lasers, and spintronic devices..作者: Cardioplegia 時(shí)間: 2025-3-24 04:51
Dilute Bismides for Mid-IR Applications, in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb.Bi., InSb.Bi., InAs.Bi., and InAsSbBi. Although these 作者: Anticlimax 時(shí)間: 2025-3-24 07:11 作者: bifurcate 時(shí)間: 2025-3-24 14:13 作者: Indicative 時(shí)間: 2025-3-24 18:19 作者: overreach 時(shí)間: 2025-3-24 22:54 作者: Commentary 時(shí)間: 2025-3-25 00:02
,Group III–V Bismide Materials Grown by Liquid Phase Epitaxy, and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III–V-Bi series. Due to the restrictions of limited solubility of Bi in II作者: 容易生皺紋 時(shí)間: 2025-3-25 05:23
Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs,Bi, Dilute Alloys,is determined by using room temperature spectroscopic ellipsometry (SE). The interband transition energies in the energy range 1.4–5.4 eV are resolved using a line shape fitting on the numerically calculated dielectric function second derivatives. The bismuth effect on the critical point (CP) parame作者: 召集 時(shí)間: 2025-3-25 08:33 作者: 革新 時(shí)間: 2025-3-25 12:48 作者: 取之不竭 時(shí)間: 2025-3-25 19:32
,Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors,iconductor-based materials, including bismuth (Bi) containing III–V films, for improved electronics and optoelectronics devices. After that the general properties of the III–V(100) surfaces, which usually undergo strong atomic rearrangements (reconstructions), are reviewed. Before focusing on the un作者: Omnipotent 時(shí)間: 2025-3-25 23:36 作者: 宣誓書 時(shí)間: 2025-3-26 03:17
Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrtors promising in future spintronics and topological quantum computation. Using vapor phase deposition method, we have synthesized few-layer topological insulator bismuth telluride, bismuth selenide, and ternary bismuth-based nanoplates with hexagonal, triangular, and truncated triangular nanostruct作者: 評(píng)論性 時(shí)間: 2025-3-26 05:28
Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure,A. (A = S, Se, Te) are constructed in views of “genome” BiA. pyramid and InA. tetrahedron. Then, the crystal structures of these compounds are predicted or reproduced to show their non-centrosymmetry based on global optimization evolutionary methodology. Thirdly, the ab initio computations of band s作者: 切碎 時(shí)間: 2025-3-26 10:39
Bismuth(V)-Containing Semiconductor Compounds and Applications in Heterogeneous Photocatalysis,rch for active semiconductor photocatalysts specially for solar energy applications is one of the most challenging tasks. The bismuth(V)-containing photocatalysts have gained great significance due to their unique electronic/energy band structures. The preparation techniques, physical–chemical prope作者: 不可接觸 時(shí)間: 2025-3-26 15:27
Bismuth-Containing Compounds978-1-4614-8121-8Series ISSN 0933-033X Series E-ISSN 2196-2812 作者: EXALT 時(shí)間: 2025-3-26 20:11
,Krankheiten der Bauchspeicheldrüse, in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb.Bi., InSb.Bi., InAs.Bi., and InAsSbBi. Although these 作者: 船員 時(shí)間: 2025-3-27 00:25 作者: mucous-membrane 時(shí)間: 2025-3-27 02:22
Krankheiten der Bewegungsorgane,rticular, they display significant potential for achieving highly efficient photonic devices operating at telecomm wavelengths (1.3–1.5 μm). However, despite substantial progress in the growth and characterisation of dilute bismides, there have been comparatively few theoretical investigations of th作者: 不舒服 時(shí)間: 2025-3-27 07:45 作者: entail 時(shí)間: 2025-3-27 11:35
,Krankheiten der Bauchspeicheldrüse,acteristic of GaAsBi alloys grown on GaAs substrate by conventional metalorganic vapor phase epitaxy technique have been investigated in detail and described in section “MOVPE Growth and Characterization of GaAsBi.” Secondly, a novel method to epitaxy GaAsBi layer on (001) GaAs substrate is presente作者: 脊椎動(dòng)物 時(shí)間: 2025-3-27 17:25
H. Assmann,G. Bergmann,H. Straub and metalorganic vapor phase epitaxy techniques have mostly been used for the growth of these compounds. We review here the application of the simple liquid phase epitaxy (LPE) technique for the growth of some members of the III–V-Bi series. Due to the restrictions of limited solubility of Bi in II作者: CHASM 時(shí)間: 2025-3-27 18:20 作者: 未開化 時(shí)間: 2025-3-27 22:18
,Krankheiten der Bauchspeicheldrüse,l transport and photoluminescence techniques. We observed no significant degradation in the electron Hall mobility with Bi incorporation in GaAs, up to a concentration of 1.2 %. At higher Bi concentration (≥1.6 %) some degradation of the electron mobility was observed, although there is no apparent 作者: dapper 時(shí)間: 2025-3-28 04:34 作者: 太空 時(shí)間: 2025-3-28 06:27 作者: Gingivitis 時(shí)間: 2025-3-28 12:51 作者: licence 時(shí)間: 2025-3-28 16:10
Die Krankheiten der Harnorgane,tors promising in future spintronics and topological quantum computation. Using vapor phase deposition method, we have synthesized few-layer topological insulator bismuth telluride, bismuth selenide, and ternary bismuth-based nanoplates with hexagonal, triangular, and truncated triangular nanostruct作者: conquer 時(shí)間: 2025-3-28 22:15
,Krankheiten der Bauchspeicheldrüse,A. (A = S, Se, Te) are constructed in views of “genome” BiA. pyramid and InA. tetrahedron. Then, the crystal structures of these compounds are predicted or reproduced to show their non-centrosymmetry based on global optimization evolutionary methodology. Thirdly, the ab initio computations of band s作者: Limited 時(shí)間: 2025-3-29 01:12 作者: 星球的光亮度 時(shí)間: 2025-3-29 03:21 作者: 換話題 時(shí)間: 2025-3-29 08:46 作者: Countermand 時(shí)間: 2025-3-29 12:45 作者: enchant 時(shí)間: 2025-3-29 16:36 作者: 路標(biāo) 時(shí)間: 2025-3-29 23:21 作者: 專心 時(shí)間: 2025-3-30 01:04
978-1-4939-4744-7Springer Science+Business Media New York 2013作者: 閑聊 時(shí)間: 2025-3-30 04:47
H. Assmann,G. Bergmann,H. Straubt in the . ., . . + . ., . ., and . .′ transition energies but with a lower magnitude. We also observed a root-square-like increase of the . . broadening parameter (Γ.) with respect to the bismuth composition.作者: NUL 時(shí)間: 2025-3-30 10:39 作者: 提名 時(shí)間: 2025-3-30 15:02 作者: bypass 時(shí)間: 2025-3-30 18:26
Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs,Bi, Dilute Alloys,t in the . ., . . + . ., . ., and . .′ transition energies but with a lower magnitude. We also observed a root-square-like increase of the . . broadening parameter (Γ.) with respect to the bismuth composition.作者: NIP 時(shí)間: 2025-3-30 22:23
,Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors,putational research methods used as well as the advantages obtained by combining the experimental and computational results in the analysis. Calculational results reveal an interesting correlation between the geometry and surface band structure of the (2 × 1) reconstruction, and the relative stability of the (2 × 1) reconstruction.作者: 乏味 時(shí)間: 2025-3-31 02:25
Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure,HG parameters are surveyed for these crystals. Finally, we provide the substance evidences by the experimental synthesis, crystal structural determinations, and optical measurements for Ba.BiInA. (A = S, Se) compounds.作者: 相同 時(shí)間: 2025-3-31 08:36
0933-033X evice applications.Written by leading experts in the corresp.Bismuth-containing compounds comprise a relatively unexplored materials system that is expected to offer many unique and desirable optoelectronic, thermoelectric, and electronic properties for innovative device applications. This book serv
