標(biāo)題: Titlebook: Bismuth-Containing Alloys and Nanostructures; Shumin Wang,Pengfei Lu Book 2019 Springer Nature Singapore Pte Ltd. 2019 Bismuth alloy.Dilut [打印本頁] 作者: STRI 時(shí)間: 2025-3-21 19:49
書目名稱Bismuth-Containing Alloys and Nanostructures影響因子(影響力)
書目名稱Bismuth-Containing Alloys and Nanostructures影響因子(影響力)學(xué)科排名
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書目名稱Bismuth-Containing Alloys and Nanostructures被引頻次
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書目名稱Bismuth-Containing Alloys and Nanostructures讀者反饋
書目名稱Bismuth-Containing Alloys and Nanostructures讀者反饋學(xué)科排名
作者: 遺忘 時(shí)間: 2025-3-21 21:55
Bismuth-Related Nanostructures,Bismuth can modify surface reconstruction of III-V semiconductors and affect their growth conditions. Bismuth incorporation into III-Vs strongly changes their electronic properties. We present an overview of how the above Bi-related effects influence structural and optical properties of III-V nanostructures.作者: 斑駁 時(shí)間: 2025-3-22 02:32 作者: Dawdle 時(shí)間: 2025-3-22 05:27 作者: Melodrama 時(shí)間: 2025-3-22 09:58
Lehrbuch der Hochfrequenztechnikd and discussed extensively. Empirical models, including tight-binding (TB) model, band anti-crossing (BAC), valance band anti-crossing (VBAC), and . model, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been use作者: Ganglion 時(shí)間: 2025-3-22 16:43
Lehrbuch der Hochfrequenztechniking this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this 作者: 網(wǎng)絡(luò)添麻煩 時(shí)間: 2025-3-22 18:17
,Elektronenr?hren und Halbleiter,egion. However, the alloys are highly metastable due to the large covalent radius of the Bi atom compared to the other group V atoms, which are replaced in the cubic zinc-blende lattice. Hence, carefully adjusted growth conditions at low growth temperatures are required in order to incorporate a sig作者: 英寸 時(shí)間: 2025-3-22 23:05
H. Brunswig,R. W. Lorenz,A. Vlcek,O. Zinkey (MBE) and their surface morphology, structural, and optical properties are investigated along with device applications. We describe how the Bi content in GaAs1?xBix epilayers grown on (100), (411)A, and (411)B GaAs substrates can be controlled by the growth conditions. Nonstandard growth condition作者: fringe 時(shí)間: 2025-3-23 03:45 作者: obviate 時(shí)間: 2025-3-23 08:50 作者: Etching 時(shí)間: 2025-3-23 11:55 作者: META 時(shí)間: 2025-3-23 15:52 作者: SKIFF 時(shí)間: 2025-3-23 21:21
Allgemeine Richtlinien der Hypnosetherapie,s chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using 作者: Promotion 時(shí)間: 2025-3-24 00:43 作者: 四牛在彎曲 時(shí)間: 2025-3-24 06:07
Erratum to: Typhus abdominalis,approach to conventional semiconductor material systems. We discuss a range of possibilities for practical applications for bismuth-containing?semiconductor lasers that benefit from the? additional flexible and effective control of energy bands and for the suppression of Auger recombination and inte作者: 間接 時(shí)間: 2025-3-24 08:33 作者: 魅力 時(shí)間: 2025-3-24 14:40
https://doi.org/10.1007/978-3-642-91041-8s have attracted immense interests because they are identified as topological insulators with salient features associated with the unique topological surface states. In this chapter, we review the use of molecular beam epitaxy technique to achieve single-crystalline Bi.X. thin films with atomically 作者: hedonic 時(shí)間: 2025-3-24 15:22 作者: Urgency 時(shí)間: 2025-3-24 20:33
H. Assmann,K. Beckmann,F. Stroebe the structures and luminescence properties of different valence states’ Bi active center in dilute bismuth optical fiber. The structure of the chapter is given as follows. In Sect.?., the background of dilute bismuth optical fiber is presented. In Sect.?., the bismuth active centers based on first-作者: VEST 時(shí)間: 2025-3-25 00:43 作者: 憤怒歷史 時(shí)間: 2025-3-25 05:33
https://doi.org/10.1007/978-981-13-8078-5Bismuth alloy; Dilute bismide; Epitaxial growth; 2D material; Bismide nanostructures; Thermoelectric mate作者: irradicable 時(shí)間: 2025-3-25 09:12
978-981-13-8080-8Springer Nature Singapore Pte Ltd. 2019作者: BURSA 時(shí)間: 2025-3-25 13:42 作者: Cholesterol 時(shí)間: 2025-3-25 16:01
H. Brunswig,R. W. Lorenz,A. Vlcek,O. Zinketomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.作者: tendinitis 時(shí)間: 2025-3-25 22:58 作者: Acetabulum 時(shí)間: 2025-3-26 02:34
Molecular Beam Epitaxy Growth and Properties of GaAsBi and AlAsBi,ing this material have been produced, such as quantum well lasers, LEDs, solar cells, etc. The Bi incorporated into AlAs is expected to change the bandgap from indirect to direct. There are only a few theoretical reports on AlAsBi, however, experimental research results are seldom reported. In this 作者: 營養(yǎng) 時(shí)間: 2025-3-26 05:56
MOVPE Growth and Device Applications of Ternary and Quaternary Dilute Bismide Alloys on GaAs Substregion. However, the alloys are highly metastable due to the large covalent radius of the Bi atom compared to the other group V atoms, which are replaced in the cubic zinc-blende lattice. Hence, carefully adjusted growth conditions at low growth temperatures are required in order to incorporate a sig作者: 堅(jiān)毅 時(shí)間: 2025-3-26 09:30
Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures,y (MBE) and their surface morphology, structural, and optical properties are investigated along with device applications. We describe how the Bi content in GaAs1?xBix epilayers grown on (100), (411)A, and (411)B GaAs substrates can be controlled by the growth conditions. Nonstandard growth condition作者: LIEN 時(shí)間: 2025-3-26 16:35
Phosphorus and Nitrogen Containing Dilute Bismides,tomic size and electronegativity, offering rich potentials for strain as well as bandgap engineering. In this chapter, we show theoretical modeling, epitaxy and characterizations of III-PBi and III-NBi and their quaternary alloys.作者: 印第安人 時(shí)間: 2025-3-26 17:14
GaSbBi Alloys and Heterostructures: Fabrication and Properties,ncorporation of Bi into antimonide-based III-V semiconductors is very attractive for the development of new optoelectronic devices working in the mid-infrared range (2–5?μm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is作者: forestry 時(shí)間: 2025-3-27 00:00 作者: Lumbar-Stenosis 時(shí)間: 2025-3-27 03:25
Surface Mediated Growth of Dilute Bismides,compositional homogeneity in the bulk [.]. There is a great deal of evidence in the literature that suggests that this is particularly true in Bi-containing films. Kawano and co-workers [.] first showed that pre-depositing Bi on Si(001) did not result in its incorporation into the subsequent Ge film作者: Ebct207 時(shí)間: 2025-3-27 08:16
Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning,s chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using 作者: 征兵 時(shí)間: 2025-3-27 13:03 作者: scoliosis 時(shí)間: 2025-3-27 16:47 作者: CRACK 時(shí)間: 2025-3-27 21:51 作者: TAIN 時(shí)間: 2025-3-28 00:02 作者: 親愛 時(shí)間: 2025-3-28 02:30 作者: 通知 時(shí)間: 2025-3-28 09:41
Dilute Bismuth Optical Fibers, the structures and luminescence properties of different valence states’ Bi active center in dilute bismuth optical fiber. The structure of the chapter is given as follows. In Sect.?., the background of dilute bismuth optical fiber is presented. In Sect.?., the bismuth active centers based on first-作者: hypnotic 時(shí)間: 2025-3-28 14:01 作者: cringe 時(shí)間: 2025-3-28 15:44
0933-033X rmoelectric and optic fibers.Combines theoretical modeling, .This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials.?It?provides a timely overview of 作者: 針葉 時(shí)間: 2025-3-28 22:27
Lehrbuch der Hochfrequenztechnikmodel, have been widely applied in calculations of electronic properties of dilute bismide III-V materials. First-principle methods have also been used to investigate many kinds of Bi-containing compounds, such as models of bulk, surface, and nanostructure. Several combined methods are also reviewed.作者: 藝術(shù) 時(shí)間: 2025-3-29 02:51
https://doi.org/10.1007/978-3-642-50199-9infrared range (2–5?μm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.作者: BOGUS 時(shí)間: 2025-3-29 05:04
,Der Bewu?tseinszustand der Hypnotisierten,viewed, with a focus on the photoluminescence (PL) and photoreflectance (PR) results especially by improved spectroscopic methods. Typical data from dilute bismides by other spectroscopic techniques of, e.g., Raman scattering, absorption and refractive index, are also briefly reviewed.作者: 食道 時(shí)間: 2025-3-29 08:05 作者: 拖債 時(shí)間: 2025-3-29 14:31
GaSbBi Alloys and Heterostructures: Fabrication and Properties,infrared range (2–5?μm). However, due to its large size, Bi does not readily incorporate into III-V alloys and the epitaxy of III-V dilute bismides is thus very challenging. This chapter presents the most recent developments in the epitaxy and characterization of GaSbBi alloys and heterostructures.作者: Nebulous 時(shí)間: 2025-3-29 18:53
Optical Properties of Dilute Bismides,viewed, with a focus on the photoluminescence (PL) and photoreflectance (PR) results especially by improved spectroscopic methods. Typical data from dilute bismides by other spectroscopic techniques of, e.g., Raman scattering, absorption and refractive index, are also briefly reviewed.作者: SYN 時(shí)間: 2025-3-29 20:32 作者: 豎琴 時(shí)間: 2025-3-30 00:24
Dilute Bismuth Optical Fibers,principle calculations are reviewed. In Sect.?., interactions of bismuth with intrinsic defects are presented. This chapter is intended for better understanding of the luminescence mechanism of Bi active center and for better preparation of dilute bismuth optical fiber.作者: Generator 時(shí)間: 2025-3-30 06:54 作者: degradation 時(shí)間: 2025-3-30 12:15
https://doi.org/10.1007/978-3-642-50199-9des on InP substrates: InGaBiAs and InPBi. MBE growth conditions, material morphology and properties (especially electrical and optical properties), and the related potential applications will be discussed, as will the band gap narrowing and the band anticrossing (BAC) model.作者: 平 時(shí)間: 2025-3-30 13:14 作者: Crohns-disease 時(shí)間: 2025-3-30 19:59 作者: Aboveboard 時(shí)間: 2025-3-30 20:51
Epitaxial Growth of Bi2X3 Topological Insulators,h as functional doping and structural engineering so that the functionalities can be further multiplied. Finally, we will give an outlook on Bi.X.-based materials system for exploring new physics and device applications.作者: 串通 時(shí)間: 2025-3-31 02:43
H. Brunswig,R. W. Lorenz,A. Vlcek,O. Zinketh conditions. We have reported a GaAs0.96Bi0.04/GaAs multiple quantum well LED grown by TST technique with a room temperature photoluminescence and electroluminescence at 1.23 μm emission wavelength. The TST procedure proves as a very efficient method to reduce Bi segregation and thus improves the quality of the GaAsBi layer at GaAs interfaces.作者: 中和 時(shí)間: 2025-3-31 05:53
Allgemeine Richtlinien der Hypnosetherapie,d monolayer below the InP (110) surface are identified. With this information, the Short-range ordering?of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation?at the interfaces of an InP/InP.Bi./InP quantum well with a Bi concentration of . is discussed.作者: CODE 時(shí)間: 2025-3-31 10:18
Die verschiedenen Formen von Angina,emonstrations and detector properties have been reported on these dilute bismide photodetectors, while the material quality still needs to be improved and the specific detector properties of dilute bismides still need more understanding.
