標(biāo)題: Titlebook: Bias Temperature Instability for Devices and Circuits; Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De [打印本頁] 作者: FAULT 時(shí)間: 2025-3-21 19:00
書目名稱Bias Temperature Instability for Devices and Circuits影響因子(影響力)
書目名稱Bias Temperature Instability for Devices and Circuits影響因子(影響力)學(xué)科排名
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書目名稱Bias Temperature Instability for Devices and Circuits網(wǎng)絡(luò)公開度學(xué)科排名
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書目名稱Bias Temperature Instability for Devices and Circuits讀者反饋
書目名稱Bias Temperature Instability for Devices and Circuits讀者反饋學(xué)科排名
作者: temperate 時(shí)間: 2025-3-21 21:07 作者: 甜食 時(shí)間: 2025-3-22 00:48 作者: labile 時(shí)間: 2025-3-22 07:05
https://doi.org/10.1007/978-1-349-09706-7 present a microscopic formulation of the reaction–diffusion model based on the reaction–diffusion master equation and solve it using the stochastic simulation algorithm. The calculations are compared to the macroscopic version as well as established experimental data. The degradation predicted by t作者: 友好關(guān)系 時(shí)間: 2025-3-22 09:29 作者: Interim 時(shí)間: 2025-3-22 14:11
S. Mirel,S. Pop,E. Onaca,S. Domnita,V. Mirelpendent defects. Although the kinetics of charge capture and defect creation clearly require the presence of charge carriers in the channel, they appear reaction rather than diffusion limited. While a number of peculiar features in these kinetics have been revealed recently, the most striking featur作者: Mangle 時(shí)間: 2025-3-22 18:50
Book 2014as temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.作者: keloid 時(shí)間: 2025-3-22 23:49
Tibor GrasserEnables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t作者: Substitution 時(shí)間: 2025-3-23 04:30 作者: 不可磨滅 時(shí)間: 2025-3-23 06:32 作者: PON 時(shí)間: 2025-3-23 10:55 作者: generic 時(shí)間: 2025-3-23 14:33
https://doi.org/10.1057/9780230236769a which contribute to BTI will also aid the reliability of devices containing high-. oxides. This chapter reviews the state of the art of modeling oxygen deficiency defects implicated in both electron and hole trapping in amorphous silica (a-SiO.).作者: Delectable 時(shí)間: 2025-3-23 18:48 作者: Arb853 時(shí)間: 2025-3-24 02:05
h in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.978-1-4939-5529-9978-1-4614-7909-3作者: 小畫像 時(shí)間: 2025-3-24 06:00
Interface Oral Health Science 2009e instability (BTI) characterization. For instance, one can achieve decoupling of stress and characterization temperature by making use of degradation quenching. Such or similar experiments can probe our understanding of the BTI physics in a novel manner.作者: BOGUS 時(shí)間: 2025-3-24 07:25 作者: 簡(jiǎn)潔 時(shí)間: 2025-3-24 12:58 作者: FAR 時(shí)間: 2025-3-24 15:37
On the Microscopic Limit of the RD Modelexplained as necessary consequences of the physical processes involved. The presented results show the impact of the unphysical assumptions in the reaction–diffusion model. Further, we generally question the suitability of the mathematical framework of reaction rate equations for a reactive-diffusive system at the given particle densities.作者: misanthrope 時(shí)間: 2025-3-24 21:20
Book 2014as temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on作者: 榮幸 時(shí)間: 2025-3-25 00:33 作者: 欺騙世家 時(shí)間: 2025-3-25 03:34
The Capture/Emission Time Map Approach to the Bias Temperature Instabilityare the temperature- and bias-independent power-law time exponent during stress including saturation at longer times, the long logarithmic-like recovery traces, as well as differences and similarities between DC and AC stress.作者: 職業(yè)拳擊手 時(shí)間: 2025-3-25 08:41
tress, duty factor dependence and bias dependence.Explains tThis book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of researc作者: Lament 時(shí)間: 2025-3-25 12:34 作者: bifurcate 時(shí)間: 2025-3-25 17:49
Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistors作者: predict 時(shí)間: 2025-3-25 22:02 作者: Munificent 時(shí)間: 2025-3-26 03:40 作者: Peak-Bone-Mass 時(shí)間: 2025-3-26 06:44 作者: 頌揚(yáng)國家 時(shí)間: 2025-3-26 09:56
Understanding Negative-Bias Temperature Instability from Dynamic Stress Experiments作者: 不開心 時(shí)間: 2025-3-26 14:57
A Comprehensive Modeling Framework for DC and AC NBTI作者: Herbivorous 時(shí)間: 2025-3-26 20:03 作者: Invertebrate 時(shí)間: 2025-3-26 21:57
Bias Temperature Instability for Devices and Circuits978-1-4614-7909-3作者: entice 時(shí)間: 2025-3-27 03:22
Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulationthe importance of variability in reliability evaluation of nanoscale devices. In particular we analyse the impact of variability on the single transistor and on many different transistors in presence of a single trapped charge. Then we show the effects related to multiple trapped charges. Finally th作者: 點(diǎn)燃 時(shí)間: 2025-3-27 07:52 作者: 河潭 時(shí)間: 2025-3-27 11:55 作者: 我邪惡 時(shí)間: 2025-3-27 16:04 作者: Oratory 時(shí)間: 2025-3-27 20:34 作者: CRUMB 時(shí)間: 2025-3-28 01:43
Atomistic Modeling of Defects Implicated in the Bias Temperature Instabilityo be responsible for performance and reliability issues in MOS devices, particularly dielectric degradation and the bias temperature instability (BTI). Ultra-thin silicon dioxide films are present at the interface between Si and high-. oxides; thus it is hoped that understanding the defects in silic作者: BRAND 時(shí)間: 2025-3-28 03:08
Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulationtering in the nanoscale era, the statistical variability due to random dopant fluctuations plays a critical role in determining the transistor reliability performance. As a consequence, in contemporary devices, reliability and variability cannot be considered anymore as separate concepts. The reliab作者: 脆弱吧 時(shí)間: 2025-3-28 07:54 作者: Bravura 時(shí)間: 2025-3-28 11:39
Advanced Modeling of Oxide Defectsng process is believed to be a non-radiative multiphonon (NMP) process, which is also encountered in numerous physically related problems. Therefore, the underlying NMP theory is frequently found as an important ingredient in the youngest BTI reliability models. While several different descriptions 作者: 未完成 時(shí)間: 2025-3-28 14:46 作者: 上釉彩 時(shí)間: 2025-3-28 22:34 作者: 尋找 時(shí)間: 2025-3-29 02:07 作者: 男生如果明白 時(shí)間: 2025-3-29 06:06 作者: 自愛 時(shí)間: 2025-3-29 10:45 作者: Nerve-Block 時(shí)間: 2025-3-29 13:00
Introduction to the Groups Treated in this Volume,relationship between them (see family treatments). In the four-gene analysis of eudicots (Soltis et al. 2003), Gunnerales and subsequently Berberidopsidales are sister to all other core eudicots, the latter being strongly supported by molecular data and isolated from all other clades (Fig. 1). Aexto作者: Incorruptible 時(shí)間: 2025-3-29 16:55
Music Notation and Distributed Creativity: The Textility of Score Annotationanence to performed and/or improvised transience. We compare two different case studies in the areas of contemporary composed music and improvised music. Concentrating on the practice of annotation, we propose an ontological shift from the work to the score. Annotation is an intimate practice, a way作者: MURKY 時(shí)間: 2025-3-29 23:16 作者: 舞蹈編排 時(shí)間: 2025-3-30 02:48 作者: prick-test 時(shí)間: 2025-3-30 07:54
Franchise Legacy and Neo-slasher Conventions in source of her unease is concern for her teenage son, John, whom she mistakenly believes has departed with his classmates. (John has in fact secretly stayed behind with three friends to have a clandestine Halloween party in the school’s basement). Keri turns and immediately collides with her secretary, Norma (Janet Leigh).作者: convulsion 時(shí)間: 2025-3-30 10:22
Carolin Drechsel (M.A.),Harald Mertz (M.A.)for significant savings with respect to storage and computing time. Some test results are reported for the 1-d Riemann shock tube problem. The mechanism underlying this mesh control strategy can be explained through a rigorous theoretical analysis.作者: 言外之意 時(shí)間: 2025-3-30 16:26
Understanding and Predicting Characteristics of Test Collections in Information Retrievaling quality of test collections. We also show that the reusability of a test collection can be predicted with high accuracy when the same document collection is used for successive years in an evaluation campaign, as is common in TREC.作者: Nebulous 時(shí)間: 2025-3-30 18:28 作者: Angiogenesis 時(shí)間: 2025-3-30 23:37
Vinicius Ramos Apolinarioie die ursprüngliche Pers?nlichkeit vergessen l?sst. So wurde die Heiligkeit selbst zum Gegenstand des schriftstellerischen Bemühens. Man kann nun zwar die Heiligkeit in unendlich-verschiedener Form variieren, aber das Menschliche und Pers?nliche werden zurückgedr?ngt, wenn auch die individuell ausg作者: FLOAT 時(shí)間: 2025-3-31 02:18
Book 1994 this large field is necessarily selective. We have chosen to emphasise insulating (especially oxidic) and semi-conducting materials. But many of the approaches and techniques we describe apply generally across the entire field of solid state science. This volume is based on a NATO ASI held at the R作者: Throttle 時(shí)間: 2025-3-31 07:37
Kapitel IV Architektur seit der Doppelrevolution: Klassizismus und Historismus im übergang zur Modertdeutungen und den Ausdrucksformen in Architektur, St?dtebau und Kunst sind. Das gilt für alle Epochen seit der Antike, wie Romanik und Gotik, Renaissance und Barock, Klassizismus und Historismus. Mit der Entwicklung der Gesellschafts- und Kulturwissenschaften und neueren Theorien in Architektur und作者: 胖人手藝好 時(shí)間: 2025-3-31 10:14 作者: 津貼 時(shí)間: 2025-3-31 16:25