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標(biāo)題: Titlebook: Beyond-CMOS Technologies for Next Generation Computer Design; Rasit O. Topaloglu,H.-S. Philip Wong Book 2019 Springer International Publis [打印本頁(yè)]

作者: 頻率    時(shí)間: 2025-3-21 16:12
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作者: 小口啜飲    時(shí)間: 2025-3-21 21:43
http://image.papertrans.cn/b/image/185371.jpg
作者: 楓樹(shù)    時(shí)間: 2025-3-22 00:53

作者: miracle    時(shí)間: 2025-3-22 06:10
978-3-030-08003-7Springer International Publishing AG, part of Springer Nature 2019
作者: 諄諄教誨    時(shí)間: 2025-3-22 10:54

作者: Essential    時(shí)間: 2025-3-22 13:31
Volker P. Andelfinger,Till H?nisch forward are suffering from diminishing returns. How then can digital computing systems meet future energy efficiency requirements, for example, for future Internet-of-Everything (IoE) and abundant-data applications? To answer this outstanding question, a wide range of emerging nanotechnologies are
作者: 小步舞    時(shí)間: 2025-3-22 19:53

作者: GLUE    時(shí)間: 2025-3-23 00:26

作者: 平    時(shí)間: 2025-3-23 04:50
Sergey Libert,Razvan Chisu,Artur Lufte introduce emerging memory technologies, including resistive RAM (ReRAM), phase change memory (PCM), and spin-torque transfer magnetic RAM (STT-MRAM). Next, we examine circuit design challenges for read and write operations, and review some of the advanced circuit techniques. Lastly, we discuss the
作者: 健壯    時(shí)間: 2025-3-23 08:00
Internet der Dinge in der Intralogistikcation demand for main memory continues to grow, DRAM-based main memory is increasingly becoming a larger system bottleneck in terms of both performance and energy consumption. A major reason for poor memory performance and energy efficiency is memory’s inability to perform computation. Instead, dat
作者: 形容詞詞尾    時(shí)間: 2025-3-23 10:56
Internet der Dinge in der Intralogistikies is an appealing approach to further continue the power scaling-down. This chapter reviews some promising beyond-CMOS emerging transistor technologies, including Tunnel FETs, Ferroelectric FETs, and Hyper-FETs. Circuit design techniques based on these emerging devices are also reviewed to provide
作者: 宮殿般    時(shí)間: 2025-3-23 16:19

作者: CAJ    時(shí)間: 2025-3-23 19:32

作者: CHART    時(shí)間: 2025-3-24 01:33

作者: Audiometry    時(shí)間: 2025-3-24 05:43
MOS integration.Sheds light on how device architecture and s.This book describes the bottleneck faced soon by designers of traditional CMOS devices, due to device scaling, power and energy consumption, and variability limitations. This book aims at bridging the gap between device technology and arch
作者: 包裹    時(shí)間: 2025-3-24 07:29
https://doi.org/10.1007/978-3-642-04896-8exible platform for More-than-Moore applications. In this chapter, we discuss some of the opportunities of this heterogeneous integration in next-generation electronic, optoelectronic, and chemical/biological sensing applications.
作者: Chivalrous    時(shí)間: 2025-3-24 11:53

作者: rods366    時(shí)間: 2025-3-24 18:35
Internet der Dinge in der Intralogistikies, including Tunnel FETs, Ferroelectric FETs, and Hyper-FETs. Circuit design techniques based on these emerging devices are also reviewed to provide insights for future energy-efficient analog and digital signal processing. In addition to the opportunities, this chapter also discusses the challenges of emerging devices in circuit and systems.
作者: 培養(yǎng)    時(shí)間: 2025-3-24 19:17

作者: Mast-Cell    時(shí)間: 2025-3-25 01:52
Emerging NVM Circuit Techniques and Implementations for Energy-Efficient Systems,. Next, we examine circuit design challenges for read and write operations, and review some of the advanced circuit techniques. Lastly, we discuss the implementation for energy-efficient systems with nonvolatile logic and nonvolatile SRAM using emerging resistive NVM.
作者: 和諧    時(shí)間: 2025-3-25 05:46

作者: Confess    時(shí)間: 2025-3-25 10:25
Die Bausteine des Internet der Dingee more compact and energy-efficient circuits. In this chapter we describe operating principles and dynamic behavior of SWD and STMG. We present circuit benchmarking and outlook for these two concepts and discuss the action points that will enable them.
作者: infatuation    時(shí)間: 2025-3-25 11:52

作者: 遺棄    時(shí)間: 2025-3-25 17:21

作者: LAVE    時(shí)間: 2025-3-25 23:39

作者: 意見(jiàn)一致    時(shí)間: 2025-3-26 00:24
Heterogeneous Integration of 2D Materials and Devices on a Si Platform,d optoelectronic properties and the easiness of their integration with silicon technologies have made 2D materials and devices a very promising and flexible platform for More-than-Moore applications. In this chapter, we discuss some of the opportunities of this heterogeneous integration in next-gene
作者: 果仁    時(shí)間: 2025-3-26 05:59

作者: MAG    時(shí)間: 2025-3-26 11:56
The Processing-in-Memory Paradigm: Mechanisms to Enable Adoption,cation demand for main memory continues to grow, DRAM-based main memory is increasingly becoming a larger system bottleneck in terms of both performance and energy consumption. A major reason for poor memory performance and energy efficiency is memory’s inability to perform computation. Instead, dat
作者: 陰謀    時(shí)間: 2025-3-26 15:54
Emerging Steep-Slope Devices and Circuits: Opportunities and Challenges,ies is an appealing approach to further continue the power scaling-down. This chapter reviews some promising beyond-CMOS emerging transistor technologies, including Tunnel FETs, Ferroelectric FETs, and Hyper-FETs. Circuit design techniques based on these emerging devices are also reviewed to provide
作者: Resistance    時(shí)間: 2025-3-26 17:03

作者: 牽連    時(shí)間: 2025-3-26 22:54
Beyond-Silicon Devices: Considerations for Circuits and Architectures, this chapter, we discuss the benefits of CNFET for VLSI circuits, and describe combined processing and design techniques to transform CNTs from a promising technology into highly energy-efficient digital circuits. Furthermore, CNFETs offer a unique opportunity to realize entirely new three-dimensio
作者: oblique    時(shí)間: 2025-3-27 02:33
Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities,ality-enhanced devices and covers recent developments in the field, spanning from the basic operation principles of multiple-independent-gate (MIG) FETs to their applications in the creation of highly compact logic gates for beyond-CMOS electronics.
作者: 凌辱    時(shí)間: 2025-3-27 05:55
The Processing-in-Memory Paradigm: Mechanisms to Enable Adoption, architectures provide an opportunity to avoid unnecessary data movement between memory and the CPU. These multi-layer architectures include a ., where compute logic can be integrated underneath multiple layers of DRAM cell arrays (i.e., the .) within the same chip. Architects can take advantage of
作者: Phagocytes    時(shí)間: 2025-3-27 09:55
Beyond-CMOS Technologies for Next Generation Computer Design
作者: 褲子    時(shí)間: 2025-3-27 15:05
Beyond-CMOS Technologies for Next Generation Computer Design978-3-319-90385-9
作者: vector    時(shí)間: 2025-3-27 20:05
Volker P. Andelfinger,Till H?nisch this chapter, we discuss the benefits of CNFET for VLSI circuits, and describe combined processing and design techniques to transform CNTs from a promising technology into highly energy-efficient digital circuits. Furthermore, CNFETs offer a unique opportunity to realize entirely new three-dimensio
作者: Junction    時(shí)間: 2025-3-28 01:14

作者: CLAM    時(shí)間: 2025-3-28 03:42

作者: 人充滿活力    時(shí)間: 2025-3-28 09:59

作者: 殺子女者    時(shí)間: 2025-3-28 13:34

作者: 設(shè)施    時(shí)間: 2025-3-28 16:49
https://doi.org/10.1007/978-3-642-17184-0Interaction; agent systems; collaboration; cultural context; cultural issues; e-culture; health care; inter




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