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標題: Titlebook: Basic Semiconductor Physics; Chihiro Hamaguchi Textbook 20011st edition Springer-Verlag Berlin Heidelberg 2001 Energy band structures.Lumi [打印本頁]

作者: 太平間    時間: 2025-3-21 19:22
書目名稱Basic Semiconductor Physics影響因子(影響力)




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書目名稱Basic Semiconductor Physics網絡公開度學科排名




書目名稱Basic Semiconductor Physics被引頻次




書目名稱Basic Semiconductor Physics被引頻次學科排名




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書目名稱Basic Semiconductor Physics年度引用學科排名




書目名稱Basic Semiconductor Physics讀者反饋




書目名稱Basic Semiconductor Physics讀者反饋學科排名





作者: Eructation    時間: 2025-3-21 21:55

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作者: craven    時間: 2025-3-22 06:54
,Electron—Phonon Interaction and Electron Transport,attice shown in Fig. 6.1, where the mass of the atoms is . and the distance between the nearest neighbor atoms (lattice constant) at equilibrium is a. We assume that the interatomic forces act on neighboring atoms only and that the atoms are connected to each other by a spring constant (force constant) ...
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作者: ARCHE    時間: 2025-3-23 00:03
The Quantum Mechanical Hall Effecttized at the interface and to exhibit two-dimensional properties. Then the Quantum Hall effect was discovered in 1980 by van Klitzing et al. [8.15] by using a Si-MOSFET and thereafter the transport properties of a twodimensional electron gas has received a great deal of attention.
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作者: 多山    時間: 2025-3-23 10:08
Quantum Structures,tized at the interface and to exhibit two-dimensional properties. Then the Quantum Hall effect was discovered in 1980 by van Klitzing et al. [8.15] by using a Si-MOSFET and thereafter the transport properties of a twodimensional electron gas has received a great deal of attention.
作者: 樹上結蜜糖    時間: 2025-3-23 16:39
Textbook 20011st edition had to wait for 30 years (till the 1960s) to understand the physics of semi- conductors. When the transistor was invented, it was still unclear whether germanium had a direct gap or indirect gap. The author started to study semiconductor physics in 1960 and the physics was very difficult for a begi
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作者: 抱怨    時間: 2025-3-23 23:12
Springer Series in Solid-State Sciences. In this Section we will not go into detail on this kind of phenomenological treatment but we will consider the magnitude of the change in the dielectric constant near the fundamental absorption edge induced by the applied electric field in a semiconductor.
作者: interior    時間: 2025-3-24 06:07
Energy Band Structures of Semiconductors, reported, but in this textbook we will deal with several methods, which are not so difficult to understand. We begin with the most simplified method to calculate electronic states in a model crystal.
作者: arthroscopy    時間: 2025-3-24 09:32
Optical Properties 2,. In this Section we will not go into detail on this kind of phenomenological treatment but we will consider the magnitude of the change in the dielectric constant near the fundamental absorption edge induced by the applied electric field in a semiconductor.
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作者: Neutropenia    時間: 2025-3-24 21:25
Energy Band Structures of Semiconductors,nd structures of electrons in crystals reflect the periodic potential of the crystals and they can be calculated when we know the exact shape and the magnitude of the crystal potentials. The shape and the magnitude of the potential are not determined directly from any experimental methods, and thus
作者: Cholagogue    時間: 2025-3-25 03:10
Cyclotron Resonance and Energy Band Structures,played a very important role in understanding the valence band structures of Ge and Si and later led to an accurate determination of the energy band structures. In this chapter first we will describe the cyclotron resonance experiment and its analysis in order to discuss the anisotropy of the electr
作者: exceptional    時間: 2025-3-25 04:39

作者: creatine-kinase    時間: 2025-3-25 10:37
Optical Properties 1,ic field intensity vector ., magnetic field flux (referred to as “magnetic field” in this text) ., current density ., and charge density .; then the macroscopic domain is governed by the classical field equations of Maxwell: ., ., ., ..
作者: 宿醉    時間: 2025-3-25 13:45

作者: START    時間: 2025-3-25 18:59
,Electron—Phonon Interaction and Electron Transport,tions at finite temperatures because of their thermal motion. When a atom is displaced from its equilibrium position, the atom is subject to a restorating force depending on the displacement. The restorating force follows Hooke’s law and is proportional to the displacement. When each atom vibrates r
作者: 轉換    時間: 2025-3-25 21:01
Magnetotransport Phenomena,cular to both the current and the magnetic field. This phenomena was discovered in 1879 by E.H. Hall and is called the .. This phenomena has been successfully used to investigate the electronic properties of semiconductors and metals. In this section, first we deal with the Hall effect in a simple w
作者: HUMP    時間: 2025-3-26 00:28
Quantum Structures, initiated in the 1960s, when electrons in the inversion layer of the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) were found to be quantized at the interface and to exhibit two-dimensional properties. Then the Quantum Hall effect was discovered in 1980 by van Klitzing et al. [8.15] by
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作者: 鑲嵌細工    時間: 2025-3-26 13:47
Springer Series in Solid-State Sciencesplayed a very important role in understanding the valence band structures of Ge and Si and later led to an accurate determination of the energy band structures. In this chapter first we will describe the cyclotron resonance experiment and its analysis in order to discuss the anisotropy of the electr
作者: obstinate    時間: 2025-3-26 19:06

作者: 枯萎將要    時間: 2025-3-27 00:12
The Quantum Mechanical Hall Effectic field intensity vector ., magnetic field flux (referred to as “magnetic field” in this text) ., current density ., and charge density .; then the macroscopic domain is governed by the classical field equations of Maxwell: ., ., ., ..
作者: inhumane    時間: 2025-3-27 01:41
Springer Series in Solid-State Sciences and the other is quadratically proportional to the electric field and is known as the .. These two phenomena are called the . and are observed in the transparent region and thus well below the fundamental absorption edge. For example, the Pockels effect is expressed by . where . is the electric fie
作者: HUMID    時間: 2025-3-27 08:07
https://doi.org/10.1007/978-3-642-83114-0tions at finite temperatures because of their thermal motion. When a atom is displaced from its equilibrium position, the atom is subject to a restorating force depending on the displacement. The restorating force follows Hooke’s law and is proportional to the displacement. When each atom vibrates r
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作者: embolus    時間: 2025-3-28 05:35
Optical Properties 1,ic field intensity vector ., magnetic field flux (referred to as “magnetic field” in this text) ., current density ., and charge density .; then the macroscopic domain is governed by the classical field equations of Maxwell: ., ., ., ..
作者: 言行自由    時間: 2025-3-28 10:16
https://doi.org/10.1007/978-3-662-04656-2Energy band structures; Luminescence, light emission diode (LED), semiconductor lase; Optical properti
作者: glisten    時間: 2025-3-28 12:56





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