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標題: Titlebook: Basic Semiconductor Physics; Chihiro Hamaguchi Textbook 20173rd edition Springer International Publishing AG 2017 Semiconductor Physics te [打印本頁]

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書目名稱Basic Semiconductor Physics影響因子(影響力)




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書目名稱Basic Semiconductor Physics被引頻次




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書目名稱Basic Semiconductor Physics讀者反饋




書目名稱Basic Semiconductor Physics讀者反饋學(xué)科排名





作者: 障礙物    時間: 2025-3-21 21:54
Wannier Function and Effective Mass Approximation,on is derived with the help of Wannier function. Using Schr?dinger equation based on the effective–mass approximation, we discuss the shallow impurity levels of donors in Ge and Si. Transport properties of electrons and holes are interpreted in terms of the effective mass in the classical mechanics
作者: Allege    時間: 2025-3-22 02:46
Optical Properties 1,Maxwell’s equations. Then quantum mechanical derivations of direct and indirect optical transition rates are given in addition to the classification of the joint density of states. Optical transitions associated with electron-hole pair, excitons, are also discussed. Dielectric functions are discusse
作者: 熱心    時間: 2025-3-22 06:38

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作者: 秘方藥    時間: 2025-3-22 13:26
Magnetotransport Phenomena,al with Hall effect, magnetoresistance, and oscillatory magnetoresistance effects in detail. Hall effect is very useful to determine the mobility and density of carriers. Shubnikov–de Haas oscillations are observed in degenerate semiconductors and provide the information of Fermi energy. Magnetophon
作者: In-Situ    時間: 2025-3-22 21:05

作者: 刻苦讀書    時間: 2025-3-23 00:57
Light Emission and Laser,connect absorption with spontaneous emission and stimulated emission. Then the spontaneous and stimulated emission rates are derived from the perturbation theory. Absorption and emission rates are strongly affected by the density of states, The density of states in the presence of impurities are sho
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作者: NOT    時間: 2025-3-23 07:37
,Electron–Phonon Interaction and Electron Transport,spective carrier mobility is obtained. In order to get an better insight into the electron transport, scattering rates and mobilities due to the various processes are evaluated numerically and plotted as functions of electron energy, temperature and carrier densities. In addition, electron mobility
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作者: fatty-streak    時間: 2025-3-23 16:55
Light Emission and Laser,n detail to explain TE and TM modes and confinement factor, in addition to Fabry–Perot analysis. Since most of the laser diodes (LDs) are fabricated in quantum well structures, confinements of electrons in the conduction band and holes in the valence bands play an important role in the laser mode an
作者: 微塵    時間: 2025-3-23 18:06
1868-4513 tom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double het978-3-319-88329-8978-3-319-66860-4Series ISSN 1868-4513 Series E-ISSN 1868-4521
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作者: 保守黨    時間: 2025-3-24 04:10
Web Site Development Methodologies,spective carrier mobility is obtained. In order to get an better insight into the electron transport, scattering rates and mobilities due to the various processes are evaluated numerically and plotted as functions of electron energy, temperature and carrier densities. In addition, electron mobility
作者: 愚笨    時間: 2025-3-24 09:37
Synthesis Lectures on Quantum Computingons due to the development in new physics of semiconductors in addition to the resistance standard, von Klitzing constant. Integral and fractional quantum Hall effects are discussed in different models. In the last part of this chapter, quantum dot (artificial atom) with several electrons is analyze
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Graduate Texts in Physicshttp://image.papertrans.cn/b/image/181153.jpg
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Warwick F. Vincent,J. Cynan Ellis-Evanson is derived with the help of Wannier function. Using Schr?dinger equation based on the effective–mass approximation, we discuss the shallow impurity levels of donors in Ge and Si. Transport properties of electrons and holes are interpreted in terms of the effective mass in the classical mechanics
作者: 全國性    時間: 2025-3-25 14:25

作者: 干旱    時間: 2025-3-25 19:48
Web Site Development Methodologies,f semiconductors. Electroreflectance spectroscopy is described in detail, which is shown to be related to the third derivative form of the dielectric function with respect to the photon energy. Electric field–induced change in the dielectric functions is shown to reflect the type of the critical poi
作者: 火光在搖曳    時間: 2025-3-25 22:58
Web Site Development Methodologies,expressed by ., where ., ., and . are the electronic charge, average of the relaxation time, and the effective mass. The relaxation time or scattering time is limited by various scatterings of carriers. Among them the phonon scattering plays the most important role. In this chapter we begin with the
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Synthesis Lectures on Quantum Computinglectron Mobility Transistor: HEMT) are discussed by solving Schr?dinder equation, and then transport properties are described by evaluating scattering rate and mobility. Basic idea of superlattices is given by showing Kronig-Penney model and Brillouin zone folding effect. In order to explain the opt
作者: artifice    時間: 2025-3-26 11:48
David C. Ku,Giovanni De Micheliconnect absorption with spontaneous emission and stimulated emission. Then the spontaneous and stimulated emission rates are derived from the perturbation theory. Absorption and emission rates are strongly affected by the density of states, The density of states in the presence of impurities are sho
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作者: 使聲音降低    時間: 2025-3-26 21:21
https://doi.org/10.1007/978-3-319-66860-4Semiconductor Physics textbook; Optical Properties of Semiconductors; Transport Properties; Quantum Str
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Basic Semiconductor Physics978-3-319-66860-4Series ISSN 1868-4513 Series E-ISSN 1868-4521
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作者: Inveterate    時間: 2025-3-27 13:40

作者: NEX    時間: 2025-3-27 19:41
Textbook 20173rd editionin semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in
作者: 外面    時間: 2025-3-27 22:03

作者: EXTOL    時間: 2025-3-28 04:29
Functional Quantum Programming, can deduce phonon energy involved with the magnetophonon magnetophonon resonance. These two oscillatory magnetoresistance effects are very widely used to investigate semiconductor parameters. Quantum Hall effect is not dealt with here but discussed in detail in Chap.?..
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作者: 跳脫衣舞的人    時間: 2025-3-28 12:46
Magnetotransport Phenomena, can deduce phonon energy involved with the magnetophonon magnetophonon resonance. These two oscillatory magnetoresistance effects are very widely used to investigate semiconductor parameters. Quantum Hall effect is not dealt with here but discussed in detail in Chap.?..
作者: ANA    時間: 2025-3-28 18:19
1868-4513 ry to explain the exact picture of the electron-electron int.The new edition of this textbook presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band
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作者: Carminative    時間: 2025-3-29 01:27
Web Site Development Methodologies,nt. Other optical spectroscopy such as Raman scattering and Brillouin scattering is also described. In addition, resonant Raman scattering and resonant Brillouin scattering are discussed. In the last part of this chapter we deal with coupled modes such as phonon polariton and exciton polariton, and finally free–carrier absorption and plasmon.
作者: 凝乳    時間: 2025-3-29 04:03
Anti-social City: Science and Crime in late Victorian Britainconsequence of a quinte ssentially contemporary ‘breakdown of authority’, it is easy to forget that the question is far older than early twentieth- century promoters of moral declinism would have us believe. It is what the criminologist Geoffrey Pearson has identified as one of the ‘disturbing conti
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