標(biāo)題: Titlebook: Band Structure Engineering in Semiconductor Microstructures; R. A. Abram,M. Jaros Book 1989 Springer Science+Business Media New York 1989 [打印本頁] 作者: VIRAL 時間: 2025-3-21 18:54
書目名稱Band Structure Engineering in Semiconductor Microstructures影響因子(影響力)
書目名稱Band Structure Engineering in Semiconductor Microstructures影響因子(影響力)學(xué)科排名
書目名稱Band Structure Engineering in Semiconductor Microstructures網(wǎng)絡(luò)公開度
書目名稱Band Structure Engineering in Semiconductor Microstructures網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Band Structure Engineering in Semiconductor Microstructures被引頻次
書目名稱Band Structure Engineering in Semiconductor Microstructures被引頻次學(xué)科排名
書目名稱Band Structure Engineering in Semiconductor Microstructures年度引用
書目名稱Band Structure Engineering in Semiconductor Microstructures年度引用學(xué)科排名
書目名稱Band Structure Engineering in Semiconductor Microstructures讀者反饋
書目名稱Band Structure Engineering in Semiconductor Microstructures讀者反饋學(xué)科排名
作者: Watemelon 時間: 2025-3-21 21:28
Handbuch des Veranstaltungsrechtsrpretation of a bistability in I(V) as an intrinsic space-charge effect. In the stabilised section of the I(V) curve, at voltages above the main resonant peak, the magnetoquantum oscillations observed with .| |. are used to investigate tunnelling assisted by LO phonon emission and by elastic scatter作者: cleaver 時間: 2025-3-22 02:19 作者: 不給啤 時間: 2025-3-22 05:09 作者: 金桌活畫面 時間: 2025-3-22 09:39
Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?11) orientation, two inequivalent interfaces exist whose offsets slightly differ (0.07 eV); associated with this difference we also found a net interfacial charge accumulation at the two inequivalent interfaces (±2.8 ×10. electrons per unit surface cell). Our results are finally interpreted through 作者: CRAFT 時間: 2025-3-22 16:28 作者: 不朽中國 時間: 2025-3-22 18:47
Quantum Transport Theory of Resonant Tunneling Devicesme-irreversible, and a proper notion of irreversibility cannot be introduced into pure-state quantum mechanics. A pure quantum state cannot evolve time-irreversibly. Models which attempt to introduce such behavior inevitably violate some fundamental physical law, usually the continuity equation. How作者: HAWK 時間: 2025-3-23 00:27
Book 1989es but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.作者: Legion 時間: 2025-3-23 02:46
0258-1221 ntal studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.978-1-4757-0772-4978-1-4757-0770-0Series ISSN 0258-1221 作者: 容易做 時間: 2025-3-23 05:41
Abgasbehandlung in Stoffaustauschmaschinenptical and x-ray photoemission experiments it turns out that ΔE. can be classified into two groups: small ΔE. (0–120 meV) and large ΔE. (300–400 meV). This paper presents an overview of these experimental data.作者: Generic-Drug 時間: 2025-3-23 13:31
E. Muschelknautz,G. H?gele,U. Muschelknautzthe alloy. Band gaps for a same-cation family of compounds derived from GaAs.Sb. exhibit a large bowing as a function of composition x similar to that reported experimentally for a metastable form of the alloy.作者: fatty-streak 時間: 2025-3-23 17:13
Leitungs- und Verwaltungskompetenzenfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.作者: 狗窩 時間: 2025-3-23 18:56 作者: 子女 時間: 2025-3-24 01:18
E. Muschelknautz,G. H?gele,U. Muschelknautziodicity, lattice mismatch, and polarity of sublattices in the formation energy vary depending upon the type of the superlattice. The electronic structure is found to depend strongly on the sublattice periodicity when it is small.作者: itinerary 時間: 2025-3-24 04:31 作者: 滋養(yǎng) 時間: 2025-3-24 09:28
Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemsptical and x-ray photoemission experiments it turns out that ΔE. can be classified into two groups: small ΔE. (0–120 meV) and large ΔE. (300–400 meV). This paper presents an overview of these experimental data.作者: 確保 時間: 2025-3-24 14:27 作者: 神秘 時間: 2025-3-24 18:42
Hot Electron Effects in Microstructuresfier (THETA) devices. The interaction between the injected electrons and the background of cold carriers is shown to be a very effective channel of dissipation. The full self-consistent simulation of the THETA device is also presented.作者: 內(nèi)向者 時間: 2025-3-24 18:59 作者: 委派 時間: 2025-3-25 02:20
Book 1989Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has fac作者: Anthrp 時間: 2025-3-25 06:20 作者: 咆哮 時間: 2025-3-25 11:29 作者: 排斥 時間: 2025-3-25 14:27
E. Muschelknautz,G. H?gele,U. Muschelknautz two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposited at the interface. This opens interesting applications from the point of view of the band structure engineering in semiconductor microstructures.作者: Preamble 時間: 2025-3-25 16:36
Normen auf dem Gebiete der Wasserversorgungstributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.作者: genesis 時間: 2025-3-25 23:48
Comments on “Can Band Offsets be Changed Controllably?”dipole can be changed by atomic scale control of the chemical composition at the interface. The primary conclusion is that significant variations appear possible by the dipoles due to oriented pairs of polar atoms at the interface. Conditions where this can occur are discussed.作者: OCTO 時間: 2025-3-26 04:03
Electronic Properties of Semiconductor Interfaces: The Control of Interface Barriers two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposited at the interface. This opens interesting applications from the point of view of the band structure engineering in semiconductor microstructures.作者: palliative-care 時間: 2025-3-26 06:55
Observation of Ballistic Holesstributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of the ballistic holes, are used to support the light nature of the ballistic holes.作者: Acupressure 時間: 2025-3-26 12:30 作者: BOOR 時間: 2025-3-26 15:55 作者: Moderate 時間: 2025-3-26 18:00
Electronic Properties of Semiconductor Interfaces: The Control of Interface Barrierstheoretical results presented in this communication suggest that the semiconductor heights are basically determined by the intrinsic properties of the two crystals forming the interface. Small changes, up to 0.3eV, can be introduced, however, in the barriers by means of adequate intralayers deposite作者: 加入 時間: 2025-3-26 23:21
Polar/Polar, Covalent/Covalent and Covalent/Polar Semiconductor Superlatticesenergy, charge density and electronic structure, the effects of the superlattice parameters on the overall properties (stability, quantum well structure, indirectness of the band gap etc.) are discussed. Geometry optimized total energy calculations indicate that the formation energy of all superlatt作者: DEFER 時間: 2025-3-27 02:27
Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?erface phenomena is critically readdressed. In particular, the conditions under which band offsets do not depend on the interface orientation are examined. State-of-the-art ab-initio pseudopotential calculations are performed for (.).(.). grown in the (001), (110), and (111) directions. Our results 作者: convert 時間: 2025-3-27 07:57
Valence Band Discontinuities in HgTe-CdTe-ZnTe Heterojunction Systemschnological interest for novel infrared devices. An important parameter, which determines most of the heterostructure properties is the valence-band discontinuity ΔE.. The value of ΔE. is presently disputed in HgTe-CdTe heterojunctions. Although large discrepancies exist between optical or magneto-o作者: Instinctive 時間: 2025-3-27 13:06
Exact Envelope Function Equations for Microstructures and the Particle in a Box Modelpic potentials and nonlatticematched structures. A systematic derivation of the particle in a box model is outlined. It is also shown how the basic ideas behind the envelope function method can lead to an intuitive derivation of the particle in a box model without ambiguities concerning boundary con作者: 毗鄰 時間: 2025-3-27 15:15
A Method for Calculating Electronic Structure of Semiconductor Superlattices: Perturbationge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.作者: ASTER 時間: 2025-3-27 19:25
The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties x = 1/2 and x = 1/4 or 3/4 structures are chalcopyrite and famatinite. Also investigated is the influence of order and strain on the bandstructure of the ordered compounds. Calculated tight-binding band gaps of ordered compounds of the Al.Ga.As family yield results not too different from those for 作者: ensemble 時間: 2025-3-27 22:16
AB-Initio Molecular Dynamics Studies of Microclusters and important tool for the theoretical approach to these questions. Here we present some very recent results on small semiconductor aggregates with special reference to calculations of equilibrium shapes and temperature effects. Results of simulations on alkali-metal microclusters are briefly menti作者: 漂浮 時間: 2025-3-28 03:43 作者: 心神不寧 時間: 2025-3-28 09:20
Observation of Ballistic Holes and injected via tunnelling into 31 nm thick p. GaAs layers. About 10% of the injected holes have been found to traverse ballistically maintaining distributions ≈ 35 meV wide, with a mean free path of about 14 nm. Resonances in the injection currents, resulting from quantum interference effects of 作者: 食草 時間: 2025-3-28 14:12
Quantum Transport Theory of Resonant Tunneling Devicesantum-mechanical wave properties of electrons in their operation. The quantum device which has recieved the most attention recently is the quantum-well resonant-tunneling diode (RTD).. This device shows a negative-resistance characteristic which is quantum-mechanical in origin, and is potentially a 作者: 優(yōu)雅 時間: 2025-3-28 14:52
Hot Electron Effects in Microstructuresrons into thin base regions. We present here a theoretical study, based on a Monte Carlo simulation, of the characteristic energy and momentum losses of hot electrons injected into a doped region, as found for example in the planar doped barrier (PDB) and in the tunneling hot electron transfer ampli作者: Keratectomy 時間: 2025-3-28 19:53 作者: Subdue 時間: 2025-3-28 23:01
Band Structure Engineering in Semiconductor Microstructures978-1-4757-0770-0Series ISSN 0258-1221 作者: 攤位 時間: 2025-3-29 05:58
https://doi.org/10.1007/978-3-642-61397-5problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as MBE) and MOCVD).作者: 極端的正確性 時間: 2025-3-29 07:47 作者: 痛苦一下 時間: 2025-3-29 12:31
https://doi.org/10.1007/978-3-642-61397-5ge crystal, and the other the interaction between average crystal states. This interaction is small and is treated as a perturbation. The method is applied to GaSb/InAs (100) superlattice, and its band structure is analyzed.作者: Servile 時間: 2025-3-29 17:16 作者: 有組織 時間: 2025-3-29 23:13 作者: 蒸發(fā) 時間: 2025-3-30 02:20 作者: graphy 時間: 2025-3-30 07:57 作者: Hectic 時間: 2025-3-30 11:09 作者: 審問 時間: 2025-3-30 15:38
The Physics of Hg-Based HeterostructuresWe describe some properties of Hg-based superlattices and heterojunctions obtained from far infrared magneto-absorption experiments. A brief discussion of the valence band offset between HgTe and CdTe is also presented.作者: 芭蕾舞女演員 時間: 2025-3-30 16:31 作者: 河流 時間: 2025-3-30 22:47
Models for Scattering and Vertical Transport in Microstructures and SuperlatticesNovel techniques for solving hot carrier transport problems are presented. These techniques are combined with calculations of scattering rates in superlattices to discuss vertical transport.作者: SEED 時間: 2025-3-31 04:41 作者: Obstacle 時間: 2025-3-31 06:34
NATO Science Series B:http://image.papertrans.cn/b/image/180550.jpg作者: 等待 時間: 2025-3-31 10:38 作者: Hypopnea 時間: 2025-3-31 13:20 作者: lethargy 時間: 2025-3-31 17:38 作者: addition 時間: 2025-4-1 00:20 作者: 松雞 時間: 2025-4-1 03:40 作者: engender 時間: 2025-4-1 06:59
https://doi.org/10.1007/978-3-642-61397-5problem in solid state physics which is neither experimentally nor theoretically well understood. Yet this quantity is of growing and crucial interest for the characterisation and design of novel heterostructure devices, which can now be grown with near perfection by modern growth techniques such as作者: 粗俗人 時間: 2025-4-1 12:35 作者: acquisition 時間: 2025-4-1 15:37
E. Muschelknautz,G. H?gele,U. Muschelknautzenergy, charge density and electronic structure, the effects of the superlattice parameters on the overall properties (stability, quantum well structure, indirectness of the band gap etc.) are discussed. Geometry optimized total energy calculations indicate that the formation energy of all superlatt
