標(biāo)題: Titlebook: Atomic and Nanometer-Scale Modification of Materials; Fundamentals and App Phaedon Avouris Book 1993 Springer Science+Business Media Dordre [打印本頁] 作者: 海市蜃樓 時間: 2025-3-21 18:19
書目名稱Atomic and Nanometer-Scale Modification of Materials影響因子(影響力)
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書目名稱Atomic and Nanometer-Scale Modification of Materials讀者反饋
書目名稱Atomic and Nanometer-Scale Modification of Materials讀者反饋學(xué)科排名
作者: MURAL 時間: 2025-3-21 23:06
STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,actions and the effects of the electrostatic field produced by a voltage pulse. This process is demonstrated by the controlled removal and redeposition of individual atoms or clusters of Si atoms from Si(111). We then show that due to the elastic coupling of surface atoms, there is a material-depend作者: Biofeedback 時間: 2025-3-22 02:29
Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM,lectric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electro作者: Saline 時間: 2025-3-22 07:14 作者: 敏捷 時間: 2025-3-22 08:43
Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M scanning tunneling microscopy (STM) by creating electrically active structures on a nanometer-scale. The intense electron beam provided by the tip of the STM leads to characteristic changes of the layer conductivity (electrically active structures), which is interpreted as to arise from local, elec作者: 危機(jī) 時間: 2025-3-22 16:24 作者: JAUNT 時間: 2025-3-22 17:53
Vibrational Heating and Atom Transfer with the STM,ng. The resulting vibrational distribution is approximately Maxwell-Boltzmann, with a characteristic vibrational temperature. A simple expression is given for this vibrational temperature as a function of the tunneling current. Calculations indicate that vibrational heating by inelastic tunneling pl作者: Panther 時間: 2025-3-23 00:16
Tip-Induced Modifications of Electronic and Atomic Structure,h can move atoms on the surface. Using the results of self-consistent calculations for the interaction energy we studied the states of a single atom (Al and Xe) between tip and sample. In particular, we investigated the perpendicular and lateral motions of the atom, and the resonant tunneling throug作者: intrude 時間: 2025-3-23 04:22 作者: restrain 時間: 2025-3-23 08:29 作者: 典型 時間: 2025-3-23 12:29 作者: Visual-Field 時間: 2025-3-23 14:15 作者: 無法取消 時間: 2025-3-23 18:02
Nanoscale Fashioning of Materials,ature placement (overlay). It appears that such optical technology can be extended to L< 0.2μm, maybe even to L=100nm. Going into the’nanometer range’ below 100 nm however will probably require radically new technology that will be very expensive to introduce and therefore will have to be significan作者: MAIZE 時間: 2025-3-24 00:32 作者: Benign 時間: 2025-3-24 03:50
Quantum Dot Fabrication by Optical Lithography and Selective Etching,ant tunnelling diode (RTD) ... quantum well based dots have been fabricated from GaAs/AlAs heterostructures on (100) and (111)B GaAs substrates. The GaAs is selectively etched by NH.OH/H.O. to fabricate deep sub-micron structures. The selective nature of the etch facilitates control of the vertical 作者: Indolent 時間: 2025-3-24 08:59 作者: 易于 時間: 2025-3-24 12:12
0168-132X ns" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-s作者: granite 時間: 2025-3-24 18:23 作者: 乞討 時間: 2025-3-24 19:14
Paul Braune,Christiane Alberternst good method for locating the probes on the substrate and for bringing the STM tip to the probes. We have built a UHV STM inside a commercial Scanning Electron Microscope in order to accomplish this. This instrument is briefly described here.作者: AVOID 時間: 2025-3-25 02:12 作者: 偏離 時間: 2025-3-25 04:39
Tip-Induced Modifications of Electronic and Atomic Structure,Al and Xe) between tip and sample. In particular, we investigated the perpendicular and lateral motions of the atom, and the resonant tunneling through the states bound to the potential well created by this atom.作者: invade 時間: 2025-3-25 11:09
Four-Point Resistance Measurements of Wires Written with a Scanning Tunneling Microscope, good method for locating the probes on the substrate and for bringing the STM tip to the probes. We have built a UHV STM inside a commercial Scanning Electron Microscope in order to accomplish this. This instrument is briefly described here.作者: fatty-acids 時間: 2025-3-25 12:13
Growth and In-Situ Processing of Low Dimensional Quantum Structures,-situ processing: reactive ion etching, radical beam etching, and focused ion beam implantation, all of which can be followed by regrowth to make complicated structures. The current status of research using these methods will be described.作者: 注意到 時間: 2025-3-25 15:53
Alkali Metals on III-V (110) Semiconductor Surfaces: Overlayer Properties and Manipulation Via STM,nic properties of both the naturally occurring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.作者: mucous-membrane 時間: 2025-3-25 21:56 作者: 現(xiàn)存 時間: 2025-3-26 04:01 作者: 切碎 時間: 2025-3-26 07:01
BEEM: A Probe of Nanoscale Modification,nto atomic terraces on the inner surface of the gold is demonstrated. Quantitative measurements of the adatom production rate are in good agreement with that predicted by a model including bond breaking by the hot electrons. The stability of the created structures is shown to be related to the physical properties of the gold film.作者: 光亮 時間: 2025-3-26 12:12 作者: 正式演說 時間: 2025-3-26 16:38 作者: 串通 時間: 2025-3-26 19:13
Beispiele erfolgreicher Zielgespr?cheeriment. Based on the ability to get a clear magnetic contrast at the atomic level with the ferromagnetic iron tips, we have observed modifications of the surface spin configuration which are localized to a scale of one nanometer.作者: 撫育 時間: 2025-3-26 21:41 作者: BOLUS 時間: 2025-3-27 03:11
Was Führungskr?fte im Vertrieb bewegtnic properties of both the naturally occurring and electric field-induced alkali metal structures observed on these semiconductor surfaces are discussed, including the possibility that the alkali metal overlayers are Mott insulators.作者: Lice692 時間: 2025-3-27 06:06
Was Führungskr?fte im Vertrieb bewegtase of the Si(001)-2x1 surface, usually two Si atoms forming a dimer are extracted at the same time. For both surfaces, Si atoms at crysallographically different sites including those at step edges are extracted with different probabilities. The microscopic mechanisms of these processes are discussed.作者: nonsensical 時間: 2025-3-27 09:52
Konflikte in neuen Arbeitswelten,ays an important role in the transfer of Xe atoms between a sample and tip. A simple expression is given for the rate of atom transfer over a barrier. Directionality of the atom-transfer process and applications to other systems are discussed.作者: impaction 時間: 2025-3-27 17:38
Ellen Schmid,Kristin Knipfer,Claudia Peusnto atomic terraces on the inner surface of the gold is demonstrated. Quantitative measurements of the adatom production rate are in good agreement with that predicted by a model including bond breaking by the hot electrons. The stability of the created structures is shown to be related to the physical properties of the gold film.作者: EVADE 時間: 2025-3-27 19:43
Auch ein Chef ist nur ein Mensch,dimension of the dots, and the preferential nature uncouples the etch front geometry from the photoresist mask geometry. The suitability of these dots for probing with a scanning tunnelling microscope will be discussed.作者: Bumble 時間: 2025-3-28 00:50
Book 1993 predicted that some day we should be able to store bits of information in structures composed of only 100 atoms or so, and thus be able to write all the information accumulated in all the books in the world in a cube of material one two-hundredths of an inch high. He went on to say, "the prin- cipl作者: 幾何學(xué)家 時間: 2025-3-28 05:55
Der typische Tag einer Führungskraftortant differences between the nano-diodes and the corresponding macroscopic devices. Nevertheless, 10 nm diameter diodes are functional electronic devices. Contacts to nanostructures show the importance of carrier scattering at boundaries (steps). We demonstrate that scattering at steps and the res作者: EVICT 時間: 2025-3-28 07:12
Die roten Linien der Führungskr?fte breaking of weak Si-Si bonds at the surface, (b) structural modifications in a near-surface region of the .-Si:H(P) layers, and (c) changes in the bonding configuration throughout the entire film down to the .-Si:H(P)/.-Si interface. In the latter case, the electrical properties of the ... heteroju作者: 向外 時間: 2025-3-28 13:59
Ellen Schmid,Kristin Knipfer,Claudia Peusists formed by self assembly techniques. The use of such thin films promises to increase further the resolution capability of STM based lithography. Issues related to the implementation of a low voltage lithography tool are discussed. A single tip instrument built with a fast STM like scanner appear作者: HAVOC 時間: 2025-3-28 15:05
Hochschulpolitische Trends in Europa self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.作者: BRACE 時間: 2025-3-28 22:35
Georg Kraus,Christel Becker-Kollel resonant frequency, .. =(k/m). = (stiffness/mass). is 5 MHz. We demonstrate nanometer-scale motion of these nanostructures and scanning probe devices. This technology is a significant array-technology that supports on-chip array addressing, control and amplification. Large, dense arrays of 10–20 n作者: 妨礙 時間: 2025-3-29 01:07
Atomic and Nanometer-Scale Modification of MaterialsFundamentals and App作者: 詼諧 時間: 2025-3-29 06:11 作者: Expostulate 時間: 2025-3-29 10:10
STM-Induced Modification and Electrical Properties of Surfaces on the Atomic and Nanometer Scales,ortant differences between the nano-diodes and the corresponding macroscopic devices. Nevertheless, 10 nm diameter diodes are functional electronic devices. Contacts to nanostructures show the importance of carrier scattering at boundaries (steps). We demonstrate that scattering at steps and the res作者: 徹底明白 時間: 2025-3-29 12:00
Writing of Local, Electrically Active Structures in Amorphous Silicon Films by Scanning Tunneling M breaking of weak Si-Si bonds at the surface, (b) structural modifications in a near-surface region of the .-Si:H(P) layers, and (c) changes in the bonding configuration throughout the entire film down to the .-Si:H(P)/.-Si interface. In the latter case, the electrical properties of the ... heteroju作者: Mettle 時間: 2025-3-29 17:37
High Resolution Patterning with the STM,ists formed by self assembly techniques. The use of such thin films promises to increase further the resolution capability of STM based lithography. Issues related to the implementation of a low voltage lithography tool are discussed. A single tip instrument built with a fast STM like scanner appear作者: AMPLE 時間: 2025-3-29 20:56
Nanoscale Fashioning of Materials, self assembling structures (e.g.two-dimensional protein crystals). But achieving ‘full service’ nanolithography, that is, L = 25 nm with overlay and feature size tolerance of 5 nm and with cost effective throughput (lcm./s) will be very challenging.作者: WATER 時間: 2025-3-30 01:11 作者: 羊欄 時間: 2025-3-30 04:36
NATO Science Series E:http://image.papertrans.cn/b/image/164792.jpg作者: FOLD 時間: 2025-3-30 11:56
Beispiele erfolgreicher Zielgespr?cheProgress is reviewed in our understanding of the effects of high electrostatic fields (of the order of volts per angstrom) on the adsorption and reaction of atoms and molecules on metal and semiconductor surfaces.作者: Flustered 時間: 2025-3-30 15:42
Was Führungskr?fte im Vertrieb bewegtThe transfer of an adsorbed atom from one electrode to another in close proximity, with a potential difference between the electrodes, is analyzed theoretically. We consider in particular the cases of silicon and sodium atoms.作者: 脆弱吧 時間: 2025-3-30 18:38 作者: caldron 時間: 2025-3-30 23:31
Physics and Chemistry in High Electric Fields,Progress is reviewed in our understanding of the effects of high electrostatic fields (of the order of volts per angstrom) on the adsorption and reaction of atoms and molecules on metal and semiconductor surfaces.作者: Negligible 時間: 2025-3-31 02:32
Field-Induced Transfer of an Atom Between Two Closely Spaced Electrodes,The transfer of an adsorbed atom from one electrode to another in close proximity, with a potential difference between the electrodes, is analyzed theoretically. We consider in particular the cases of silicon and sodium atoms.作者: 全面 時間: 2025-3-31 08:49 作者: omnibus 時間: 2025-3-31 11:04
Atom Manipulation with the Scanning Tunneling Microscope,s. It is shown how the reversible transfer of an atom between the tip and surface can he used to create a bistable switch. Several applications of atomic manipulation as a laboratory tool are presented.作者: pester 時間: 2025-3-31 13:29
Field Emission from Single-Atom Protrusion Tips: Electron Spectroscopy and Local Heating,t the tip apex. The energy exchange at the tip apex during electron emission must take into account this band-structure and this can lead to an important heating of the nano-scale cathode even at very low emission currents.作者: magnanimity 時間: 2025-3-31 20:22
,Führungsstile und Führungsverhalten,s. It is shown how the reversible transfer of an atom between the tip and surface can he used to create a bistable switch. Several applications of atomic manipulation as a laboratory tool are presented.作者: anthropologist 時間: 2025-3-31 21:41
Der typische Tag einer Führungskraftactions and the effects of the electrostatic field produced by a voltage pulse. This process is demonstrated by the controlled removal and redeposition of individual atoms or clusters of Si atoms from Si(111). We then show that due to the elastic coupling of surface atoms, there is a material-depend作者: 多骨 時間: 2025-4-1 02:25
Was Führungskr?fte im Vertrieb bewegtlectric field due to the field gradients associated with step edges. We have exploited a similar phenomenon, the large field gradients in the vicinity of the STM tip, to induce the directional diffusion of Cs and K atoms adsorbed on room temperature GaAs(110) and InSb(110). The geometric and electro作者: innate 時間: 2025-4-1 09:42
Was Führungskr?fte im Vertrieb bewegtt a separation of ~1 nm and apply an appropriate voltage pulse to it, we can extract a single Si atom from a predetermined position routinely. The extracted Si atoms are redeposited to the surface with a certain probability. The redeposited Si atom can be displaced intentionally on the surface. In c作者: ALLAY 時間: 2025-4-1 10:30
Die roten Linien der Führungskr?fte scanning tunneling microscopy (STM) by creating electrically active structures on a nanometer-scale. The intense electron beam provided by the tip of the STM leads to characteristic changes of the layer conductivity (electrically active structures), which is interpreted as to arise from local, elec作者: 是他笨 時間: 2025-4-1 15:29 作者: BLUSH 時間: 2025-4-1 22:16
Konflikte in neuen Arbeitswelten,ng. The resulting vibrational distribution is approximately Maxwell-Boltzmann, with a characteristic vibrational temperature. A simple expression is given for this vibrational temperature as a function of the tunneling current. Calculations indicate that vibrational heating by inelastic tunneling pl作者: 憤慨一下 時間: 2025-4-2 00:25
