標(biāo)題: Titlebook: Atomic Diffusion in Semiconductors; D. Shaw Book 1973 Plenum Publishing Company Ltd 1973 crystal.diffusion.semiconductor [打印本頁(yè)] 作者: Grant 時(shí)間: 2025-3-21 16:29
書目名稱Atomic Diffusion in Semiconductors影響因子(影響力)
書目名稱Atomic Diffusion in Semiconductors影響因子(影響力)學(xué)科排名
書目名稱Atomic Diffusion in Semiconductors網(wǎng)絡(luò)公開度
書目名稱Atomic Diffusion in Semiconductors網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Atomic Diffusion in Semiconductors被引頻次
書目名稱Atomic Diffusion in Semiconductors被引頻次學(xué)科排名
書目名稱Atomic Diffusion in Semiconductors年度引用
書目名稱Atomic Diffusion in Semiconductors年度引用學(xué)科排名
書目名稱Atomic Diffusion in Semiconductors讀者反饋
書目名稱Atomic Diffusion in Semiconductors讀者反饋學(xué)科排名
作者: Collision 時(shí)間: 2025-3-21 20:18
The Calculation of Diffusion Coefficients in Semiconductors, atomic motion in semiconducting materials. This theoretical work, aside from being of intrinsic interest, has some utility for individuals interested in experimental phenomena. Firstly, the calculations provide a means for estimating diffusion properties for systems which have not been studied or f作者: CANDY 時(shí)間: 2025-3-22 03:56 作者: Blanch 時(shí)間: 2025-3-22 07:13
Experimental Methods for Determining Diffusion Coefficients in Semiconductors,the purpose of either directly or indirectly establishing the distribution of the diffusing species in the semiconductors so that certain aspects of the diffusion phenomena could be properly understood and some theoretical predictions verified. Both direct and indirect methods of establishing the di作者: Prostaglandins 時(shí)間: 2025-3-22 10:29
Diffusion in Silicon and Germanium, from the availability of the purest and most perfect crystals known, and from our ability to create electric potential profile structures and carrier concentrations to specifications in this material by controlled doping with impurity atoms. One of the most important methods of controlled doping is作者: sparse 時(shí)間: 2025-3-22 16:49 作者: 歡笑 時(shí)間: 2025-3-22 18:22
Diffusion in the Chalcogenides of Zn, Cd And Pb,nd device applications. Until recent years, property studies and applications of crystals of these compounds have been made with relatively little regard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the cr作者: 畢業(yè)典禮 時(shí)間: 2025-3-23 00:28
Diffusion in Oxide Semiconductors, of ceramics. In this chapter an attempt will be made to point out trends in transport through oxides. The diversity of different oxides, their structures and compositions make classification difficult. Some generalizations can be made which aid in classifying the types of diffusion in oxides. Bulk 作者: grandiose 時(shí)間: 2025-3-23 04:01 作者: 肉體 時(shí)間: 2025-3-23 05:57 作者: Tracheotomy 時(shí)間: 2025-3-23 12:38
Micha? Baczyński,Balasubramaniam Jayaram. The indirect methods involve the measurement of certain physical properties of the semiconductors that result from the diffusions, such as their electrical conductivity, resistivity, or their optical reflectivity in the infrared range, etc.作者: 熱心 時(shí)間: 2025-3-23 15:04 作者: 排他 時(shí)間: 2025-3-23 21:47
on has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffu作者: 易碎 時(shí)間: 2025-3-24 01:26
Micha? Baczyński,Balasubramaniam Jayaramard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the crystal preparation, the point defect structure and the properties of these semiconductors.作者: Kidney-Failure 時(shí)間: 2025-3-24 03:17
Diffusion in the Chalcogenides of Zn, Cd And Pb,ard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the crystal preparation, the point defect structure and the properties of these semiconductors.作者: irreparable 時(shí)間: 2025-3-24 09:18
Book 1973ell established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion proce作者: 圓桶 時(shí)間: 2025-3-24 12:28
Phase Relationships in Semiconductors,e very dilute solutions involved, the amount of reliable experimental data is still rather limited.t Studies of non-equilibrium processes have been hindered by the problems of measuring all the parameters involved but a considerable body of semiempirical data has been amassed.作者: wangle 時(shí)間: 2025-3-24 16:07
Diffusion in Oxide Semiconductors,diffusion depends on temperature, oxide structure, the number of point defects in the oxide and hence the position of the metal in the periodic table and finally on the partial pressure of oxygen coexisting over a particular oxide. Special attention will be directed to the role of the partial pressure in equilibrium with the oxide.作者: 泥瓦匠 時(shí)間: 2025-3-24 21:49
Fuzzy Implications from Uninormse very dilute solutions involved, the amount of reliable experimental data is still rather limited.t Studies of non-equilibrium processes have been hindered by the problems of measuring all the parameters involved but a considerable body of semiempirical data has been amassed.作者: expire 時(shí)間: 2025-3-25 02:15
Chang Shu,Zhi-wen Mo,Xiao Tang,Zhi-hua Zhangdiffusion depends on temperature, oxide structure, the number of point defects in the oxide and hence the position of the metal in the periodic table and finally on the partial pressure of oxygen coexisting over a particular oxide. Special attention will be directed to the role of the partial pressure in equilibrium with the oxide.作者: insurgent 時(shí)間: 2025-3-25 06:18 作者: STENT 時(shí)間: 2025-3-25 08:33
Diffusion in Silicon and Germanium,sion steps. The current state of the art of diffusion processes in the fabrication of integrated circuits relies on an empirical approach with trial and error. The difficulty of such an approach will increase exponentially with the increase of the number of diffusion steps, and a semiempirical appro作者: exophthalmos 時(shí)間: 2025-3-25 14:23
,Diffusion in the III–V Compound Semiconductors,n the band structure [1]. The varied band structures and large range of energy gaps possible with the III–V compounds have led to many potential applications. The crystal structure, lattice constant, type of energy gap, and the room temperature energy gap are summarized in Table 6.1 for the elementa作者: 老巫婆 時(shí)間: 2025-3-25 16:11
Book 1973 germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline latt作者: 收養(yǎng) 時(shí)間: 2025-3-25 20:54
much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline latt978-1-4615-8638-8978-1-4615-8636-4作者: 殖民地 時(shí)間: 2025-3-26 03:50 作者: hypotension 時(shí)間: 2025-3-26 08:10 作者: Crohns-disease 時(shí)間: 2025-3-26 12:03
Fuzzy Implications from Uninormsn the band structure [1]. The varied band structures and large range of energy gaps possible with the III–V compounds have led to many potential applications. The crystal structure, lattice constant, type of energy gap, and the room temperature energy gap are summarized in Table 6.1 for the elementa作者: TAP 時(shí)間: 2025-3-26 14:43 作者: myriad 時(shí)間: 2025-3-26 17:56
Fuzzy Predicate Calculus and Fuzzy Rules, atomic motion in semiconducting materials. This theoretical work, aside from being of intrinsic interest, has some utility for individuals interested in experimental phenomena. Firstly, the calculations provide a means for estimating diffusion properties for systems which have not been studied or f作者: scrape 時(shí)間: 2025-3-26 22:46
Fuzzy Implications from Uninormse part of this work has been concerned with the distribution of solutes between phases both during crystal growth and in the course of subsequent processing. As a result of this, the theory of equilibrium processes is now relatively well understood but because of difficulties with the analysis of th作者: 在前面 時(shí)間: 2025-3-27 01:12
Micha? Baczyński,Balasubramaniam Jayaramthe purpose of either directly or indirectly establishing the distribution of the diffusing species in the semiconductors so that certain aspects of the diffusion phenomena could be properly understood and some theoretical predictions verified. Both direct and indirect methods of establishing the di作者: 欲望小妹 時(shí)間: 2025-3-27 06:08
An Introduction to Fuzzy Implications from the availability of the purest and most perfect crystals known, and from our ability to create electric potential profile structures and carrier concentrations to specifications in this material by controlled doping with impurity atoms. One of the most important methods of controlled doping is作者: NOMAD 時(shí)間: 2025-3-27 12:44
Fuzzy Implications from Uninorms III–V compounds may readily be doped as .- orp-type to form . junctions, the most useful and widespread application of semiconductors. They are 1-to-l chemical compounds of the group III elements B, Al, Ga, and In with the group V elements N, P, As, and Sb. The III–V compounds are tetrahedrally coo作者: 生氣地 時(shí)間: 2025-3-27 13:52
Micha? Baczyński,Balasubramaniam Jayaramnd device applications. Until recent years, property studies and applications of crystals of these compounds have been made with relatively little regard to the preparative history of the crystals. Recently, however, there have been a number of careful studies showing the relationship between the cr作者: 修正案 時(shí)間: 2025-3-27 19:59 作者: opportune 時(shí)間: 2025-3-27 22:22
http://image.papertrans.cn/b/image/164719.jpg作者: Myelin 時(shí)間: 2025-3-28 03:14
https://doi.org/10.1007/978-1-4615-8636-4crystal; diffusion; semiconductor作者: MUT 時(shí)間: 2025-3-28 09:44
978-1-4615-8638-8Plenum Publishing Company Ltd 1973作者: abject 時(shí)間: 2025-3-28 13:33 作者: 有雜色 時(shí)間: 2025-3-28 15:24
,Research at Women’s Colleges, 1890–1940,nd the strategies they developed to ensure strong social science programs in their institutions, to train young women in social sciences, to push their institutions to accommodate their research commitments, and to use their research to influence policy and reform at the local, national, and interna作者: Fracture 時(shí)間: 2025-3-28 19:29 作者: 性學(xué)院 時(shí)間: 2025-3-29 01:32 作者: Aerophagia 時(shí)間: 2025-3-29 05:24
