標(biāo)題: Titlebook: Applications of Emerging Memory Technology; Beyond Storage Manan Suri Book 2020 Springer Nature Singapore Pte Ltd. 2020 Semiconductor Memor [打印本頁] 作者: 遮陽傘 時間: 2025-3-21 17:55
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書目名稱Applications of Emerging Memory Technology讀者反饋
書目名稱Applications of Emerging Memory Technology讀者反饋學(xué)科排名
作者: Antigen 時間: 2025-3-21 21:22 作者: 吸引力 時間: 2025-3-22 04:09
Phase Change Memory for Physical Unclonable Functions,ivate information. Physical unclonable functions (PUFs) utilize the inevitable manufacturing process variations to provide a unique way to verify trusted users. Improvements in attack methods over the years have recently moved the field of PUFs from traditional silicon devices toward emerging nonvol作者: Glycogen 時間: 2025-3-22 08:30 作者: Incompetent 時間: 2025-3-22 10:43
Memristive Biosensors for Ultrasensitive Diagnostics and Therapeutics,apeutics. Silicon nanowire arrays exhibiting a memristive electrical response are acquired through a top-down nanofabrication process. Surface treatments implementing sophisticated bio-functionalization strategies and adopting suitably selected biological materials give rise to the .. The particular作者: seroma 時間: 2025-3-22 15:21
Optimized Programming for STT-MTJ-Based TCAM for Low-Energy Approximate Computing,ques are already being employed in many applications, which mainly depends on a huge amount of data like information analysis, transmission, policy, decision-making, etc. An electronic system used in these applications, require to perform the operations like data capture, storage, visualization, and作者: dapper 時間: 2025-3-22 19:15 作者: ARBOR 時間: 2025-3-23 00:49 作者: Tdd526 時間: 2025-3-23 03:09 作者: 羊齒 時間: 2025-3-23 09:09 作者: interpose 時間: 2025-3-23 12:06 作者: HALL 時間: 2025-3-23 17:44
M. J. Holcomb,David E. Macintoshce levels. In addition, the application potential of emerging spintronics technologies, such as spin orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), will be discussed in terms of their benefits and challenges.作者: 赦免 時間: 2025-3-23 18:48
Book 2020hnology nanodevices. The applications dealt in the text will be beyond conventional storage application of semiconductor memory devices. The text will deal with material and device physical principles that give rise to interesting characteristics and phenomena in the emerging memory device that can 作者: Thyroxine 時間: 2025-3-23 23:36
Jeffrey B. Titus,Hayley Loblein,Dave Clarke In this chapter, we address such customized machine learning algorithm as well as new algorithms that are barely based on the conventional machine learning. A particular focus will be placed on a recently proposed greedy edge-wise training algorithm that is suitable for resistive switching memory arrays.作者: 猛擊 時間: 2025-3-24 06:26 作者: Saline 時間: 2025-3-24 09:23 作者: Implicit 時間: 2025-3-24 11:34 作者: Prostaglandins 時間: 2025-3-24 15:12 作者: 終止 時間: 2025-3-24 22:01
Spintronic Logic-in-Memory Paradigms and Implementations,umption associated with the data transfer (power wall) have become the most urgent problems for conventional von-Neumann architecture, owing to the physical separation of the processor and the memory units (see Fig.?9.1a) and the performance mismatch between the two.作者: outer-ear 時間: 2025-3-24 23:49
https://doi.org/10.1007/978-981-13-8379-3Semiconductor Memory Technology; Non Volatile Memory Technology; Nanoelectronics; Resistive Memory; Micr作者: 過于光澤 時間: 2025-3-25 03:39 作者: 孤僻 時間: 2025-3-25 11:34 作者: DEFT 時間: 2025-3-25 15:19 作者: COMA 時間: 2025-3-25 19:12
M. J. Holcomb,David E. Macintoshate for constructing the NV cache is the spin transfer torque magnetic RAM (STT-MRAM), which is featured with low power, fast speed, high density and nearly unlimited endurance. In this chapter, we will review the efforts made to realize the STT-MRAM based NV cache, ranging from architecture to devi作者: 忘恩負(fù)義的人 時間: 2025-3-25 20:57
Jeffrey S. Kreutzer,John DeLuca,Bruce Caplandevelopment of computing units that can normally be . when not in use and . instantly with full performance, when required thereby helping in eliminating leakage power. However, with direct power-down, the states in local memories (SRAM) and volatile registers (SRAM-based flip-flop) will be lost. Th作者: 朝圣者 時間: 2025-3-26 02:03 作者: Charade 時間: 2025-3-26 07:11 作者: Dysarthria 時間: 2025-3-26 09:15
Encyclopedia of Clinical Neuropsychologyapeutics. Silicon nanowire arrays exhibiting a memristive electrical response are acquired through a top-down nanofabrication process. Surface treatments implementing sophisticated bio-functionalization strategies and adopting suitably selected biological materials give rise to the .. The particular作者: nitric-oxide 時間: 2025-3-26 13:53 作者: 或者發(fā)神韻 時間: 2025-3-26 17:05 作者: Incompetent 時間: 2025-3-26 21:08 作者: 抒情短詩 時間: 2025-3-27 02:03 作者: 史前 時間: 2025-3-27 05:46 作者: 避開 時間: 2025-3-27 10:18 作者: adulterant 時間: 2025-3-27 16:27 作者: 偶像 時間: 2025-3-27 21:19
Encyclopedia of Clinical Neuropsychologypear as the ideal source of entropy for hardware TRNG and PUF. These novel memory concepts include resistive switching memory (RRAM), phase change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM) devices. As these devices are increasingly adopted as memory and computing elements in 作者: 輕快來事 時間: 2025-3-28 00:23
Encyclopedia of Clinical Neuropsychologylity of detecting extremely small traces of cancer biomarkers, as well as effective screening and continuous monitoring of therapeutic compounds in full human serum bringing novelty and solutions in the medical practice, especially in the field of personalized medicine.作者: 不足的東西 時間: 2025-3-28 06:06
Encyclopedia of Clinical Neuropsychologycell design, and AC are also discussed. Error-tolerant behavior of AC and stochastic writing of ReTCAM cell are exploited to achieve low write energy. Case study of 3-bit (LSB) write operation using the proposed programming scheme is also investigated based on distance match accuracy. ReTCAM bit-cel作者: LAP 時間: 2025-3-28 09:02 作者: 來這真柔軟 時間: 2025-3-28 13:20
Phase Change Memory for Physical Unclonable Functions, rapid quench from melt during the reset programming and the stochastic distribution and orientation of seed crystals nucleated in an amorphous plug during the set operation. This programming variability, which comes in addition to the process variations present in any technology, is an important ad作者: 清真寺 時間: 2025-3-28 16:56
Applications of Resistive Switching Memory as Hardware Security Primitive,pear as the ideal source of entropy for hardware TRNG and PUF. These novel memory concepts include resistive switching memory (RRAM), phase change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM) devices. As these devices are increasingly adopted as memory and computing elements in 作者: Defiance 時間: 2025-3-28 18:47 作者: instructive 時間: 2025-3-29 02:22 作者: conduct 時間: 2025-3-29 06:38 作者: 揉雜 時間: 2025-3-29 10:33
1437-0387 sensing and other misc beyond storage applications. The book is envisioned for multi-purpose use as a textbook in advanced UG/PG courses and a research text for scientists working in the domain.978-981-13-8381-6978-981-13-8379-3Series ISSN 1437-0387 Series E-ISSN 2197-6643 作者: 結(jié)束 時間: 2025-3-29 14:54
10樓作者: 和諧 時間: 2025-3-29 17:30
10樓作者: 萬神殿 時間: 2025-3-29 19:51
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