標(biāo)題: Titlebook: Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor; Iraj Sadegh Amiri,Mahdiar Ghadiry Book 2018 The A [打印本頁] 作者: Flexible 時(shí)間: 2025-3-21 17:57
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書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor影響因子(影響力)學(xué)科排名
書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor網(wǎng)絡(luò)公開度
書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor被引頻次
書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor被引頻次學(xué)科排名
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書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor讀者反饋
書目名稱Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor讀者反饋學(xué)科排名
作者: Clinch 時(shí)間: 2025-3-21 22:15
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor作者: 寬敞 時(shí)間: 2025-3-22 01:53 作者: enterprise 時(shí)間: 2025-3-22 04:58
2191-530X s of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used 978-981-10-6549-1978-981-10-6550-7Series ISSN 2191-530X Series E-ISSN 2191-5318 作者: painkillers 時(shí)間: 2025-3-22 12:18 作者: 槍支 時(shí)間: 2025-3-22 14:00
2191-530X nsistors (GNR-based FETs).Discusses an analytical model for This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionizati作者: 相一致 時(shí)間: 2025-3-22 18:44
Luis Moraleda-Novo,Primitivo Gómez-Carderoficient of GNR, and finally, Sect.?. presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.作者: 魅力 時(shí)間: 2025-3-22 23:23 作者: 襲擊 時(shí)間: 2025-3-23 02:07
Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Tficient of GNR, and finally, Sect.?. presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, some parts of the results are presented here for the purpose of clarification and will not be repeated in the results and discussion chapter.作者: 睨視 時(shí)間: 2025-3-23 06:59 作者: 無能力 時(shí)間: 2025-3-23 10:21
Methodology for Modelling of Surface Potential, Ionization and Breakdown of Graphene Field-Effect Teral electric field and length of saturation velocity region (LVSR) of single- and double-gate GNRFETs. Section?. proposes a model for ionization coefficient of GNR, and finally, Sect.?. presents analytical approaches to calculate breakdown voltage of single- and double-gate GNRFETs. In addition, so作者: condemn 時(shí)間: 2025-3-23 14:11
Results and Discussion on Ionization and Breakdown of Graphene Field-Effect Transistor, respect to structural parameters in this chapter. In addition, ionization coefficient is calculated with respect to inverse electric field. Finally, the breakdown voltage is calculated for DG- and SG-GNRFETs and the trends and profiles are discussed. Table?. shows default values for all the paramet作者: 先行 時(shí)間: 2025-3-23 21:27 作者: 不安 時(shí)間: 2025-3-23 22:43 作者: magenta 時(shí)間: 2025-3-24 06:22 作者: photophobia 時(shí)間: 2025-3-24 07:19
Mohammad A. Raza,Matthew L. Mintze nanoscale dimensions, silicon is facing limitations for downscaling such as short-channel effects. As a result, new device concepts such as graphene FETs are being introduced as alternatives to silicon. Since graphene has a zero bandgap, graphene nanoribbon of this material has been introduced to 作者: 補(bǔ)充 時(shí)間: 2025-3-24 13:52
https://doi.org/10.1007/978-981-10-6550-7GNRFET; Breakdown Voltage (BV); Length of Velocity Saturation Region (LVSR); Gate Voltages; Semiconducto作者: gentle 時(shí)間: 2025-3-24 18:44 作者: flaggy 時(shí)間: 2025-3-24 19:25
Iraj Sadegh Amiri,Mahdiar GhadiryProvides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs).Discusses an analytical model for 作者: 招募 時(shí)間: 2025-3-25 00:21 作者: Liability 時(shí)間: 2025-3-25 07:19
Jeffrey Cheng M.D.,Karen B. Zur M.D.In this section, firstly, a brief background is presented to explain the issues connected with CMOS scaling and breakdown voltage. Secondly, the research objectives, scope, plan and a brief methodology of this project are expressed.作者: Insensate 時(shí)間: 2025-3-25 11:07
Vascular Rings and Pulmonary Artery SlingsIn this chapter, first the basic concept of FETs is introduced. In addition, in three subsections, the concepts related to the length of saturation velocity region, impact ionization and lateral breakdown are discussed. Finally, graphene is introduced as a candidate for transistor channel and its properties related to FET are studied.作者: 放棄 時(shí)間: 2025-3-25 12:48 作者: 灌輸 時(shí)間: 2025-3-25 19:54 作者: GEAR 時(shí)間: 2025-3-25 20:36
Integration of Epigenetic Data in Bayesian Network Modeling of Gene Regulatory Networkof insights, other types of data are needed to elucidate the structure and dynamics of gene regulation. Epigenetic data (e.g., histone modification) show promise to provide more insights into gene regulation and on epigenetic implication in biological pathways. In this paper, we investigate how epig作者: FLINT 時(shí)間: 2025-3-26 04:02 作者: 扔掉掐死你 時(shí)間: 2025-3-26 06:07 作者: Optic-Disk 時(shí)間: 2025-3-26 09:28 作者: overwrought 時(shí)間: 2025-3-26 16:21 作者: 不出名 時(shí)間: 2025-3-26 19:15
A Real-Time PCR Protocol to Determine the Number of Amelogenin (X-Y) Gene Copies From Forensic DNA ork as a way to adjust the DNA input on subsequent end-point PCR-based DNA typing approaches ensuring the optimal use of the limited amounts of nuclear DNA found in many forensic evidences. Nuclear DNA quantification also aids in the interpretation of the consistency of multiplex STR profiling data obtained from low copy number DNA samples.作者: Entropion 時(shí)間: 2025-3-26 23:57
Lena ?imi?,Emily Underwood-Leewird: An allen deutschen Universit?ten ist mittlerweile .-Software eingeführt und die Hochschulleitungen dr?ngen massiv darauf, diese Instrumente in der Lehre zu nutzen. Institutionen werden mit dem Kostenargument gek?dert, denn . soll mindestens mittelfristig teures Personal einsparen. Die Lehrende作者: 細(xì)胞 時(shí)間: 2025-3-27 05:03
J. Dixonschengeschaltet ist, vorhanden sein mu?. Es wird eine L?nge der Schnur von 15–20 cm jeweils genügen. Die Schnur, am besten Hanfschnur, wird mitsamt dem an ihr befestigten Isolator mit Antennenleiter an einem in die Wand geschlagenen Haken, sogenannten ?Kloben“, befestigt bzw. eingeh?ngt.作者: 煩憂 時(shí)間: 2025-3-27 09:12
Society, Democracy, and Economics: Challenges for Social Studies and Citizenship Education in a Neolach for a democracy that is not dominated by capital? Do we want to teach for capitalist democracy? Is there an alternative? Is the concept of democracy bankrupt? Is democracy as a concept and practice even salvageable? If democracy is salvageable then teaching about and for democracy in contemporar作者: CAMP 時(shí)間: 2025-3-27 11:55
Accounting and Accountancy,on, by the US Supreme Court in two germinal cases, of the standards of the Convention on the Rights of the Child (CRC), the role of international human rights law, and the practices of other nations. Strategies to abolish the juvenile death penalty in the US included coalition-building, education, l作者: Jogging 時(shí)間: 2025-3-27 17:38 作者: 嚴(yán)厲譴責(zé) 時(shí)間: 2025-3-27 19:23
