標(biāo)題: Titlebook: Analysis and Simulation of Semiconductor Devices; Siegfried Selberherr Book 1984 Springer-Verlag/Wien 1984 Analysis.Halbleiterbauelement.N [打印本頁] 作者: 不服從 時間: 2025-3-21 17:21
書目名稱Analysis and Simulation of Semiconductor Devices影響因子(影響力)
書目名稱Analysis and Simulation of Semiconductor Devices影響因子(影響力)學(xué)科排名
書目名稱Analysis and Simulation of Semiconductor Devices網(wǎng)絡(luò)公開度
書目名稱Analysis and Simulation of Semiconductor Devices網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Analysis and Simulation of Semiconductor Devices被引頻次
書目名稱Analysis and Simulation of Semiconductor Devices被引頻次學(xué)科排名
書目名稱Analysis and Simulation of Semiconductor Devices年度引用
書目名稱Analysis and Simulation of Semiconductor Devices年度引用學(xué)科排名
書目名稱Analysis and Simulation of Semiconductor Devices讀者反饋
書目名稱Analysis and Simulation of Semiconductor Devices讀者反饋學(xué)科排名
作者: Ambiguous 時間: 2025-3-21 23:46
Some Fundamental Properties,ieal model has to be given. The equations which form this mathematieal model are commonly called the basic semiconductor equations. They can be derived from Maxwell’s equations (2-1), (2-2), (2-3) and (2-4), several relations obtained from solid-state physics knowledge about semiconductors and vario作者: Ganglion-Cyst 時間: 2025-3-22 03:11 作者: fidelity 時間: 2025-3-22 05:46 作者: BRINK 時間: 2025-3-22 12:36
Analytical Investigations About the Basic Semiconductor Equations,the questions of existence, uniqueness and structure and smoothness of solutions. These are of importance in both the theoretical context and the practical context, since the knowledge of the structure and smoothness properties of solutions is indeed essential for the selection of appropriate numeri作者: 煤渣 時間: 2025-3-22 13:11
The Discretization of the Basic Semiconductor Equations,stigated and characterized analytically in the previous chapter. This system cannot be solved explicitly in general. Therefore, the solution must be calculated by means of numerical approaches. We shall consider in this chapter such Solution procedures for the sealed equations which read:.Any numeri作者: 顯示 時間: 2025-3-22 19:27 作者: notification 時間: 2025-3-22 23:29 作者: Lasting 時間: 2025-3-23 03:15
A Glimpse on Results,nformative for readers with just general interest in modeling but without specialized knowledge of device physics. I have chosen two examples which are intended as a fair trade-off between these objectives.作者: Verify 時間: 2025-3-23 07:08 作者: FACT 時間: 2025-3-23 11:11 作者: 精致 時間: 2025-3-23 17:31 作者: Metastasis 時間: 2025-3-23 21:39 作者: 使苦惱 時間: 2025-3-23 23:38 作者: 自傳 時間: 2025-3-24 05:22
Book 1984n 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafte作者: 起波瀾 時間: 2025-3-24 08:56
https://doi.org/10.1007/978-3-662-44298-2us — sometimes overly simplistic — assumptions. .. and .are the electric field and displacement vector; .and .are the magnetic field and induction vector, respectively. .denotes the conduction current density, and ρ is the electric charge density.作者: RAGE 時間: 2025-3-24 13:40 作者: 內(nèi)閣 時間: 2025-3-24 18:28
https://doi.org/10.1007/978-3-662-44298-2ing the basic semiconductor equations is only fqasible with at least qualitative knowledge of the associated parameters (e.g. sign, smoothness, order of magnitude). Therefore, we shall discuss in this chapter the most important models for the physical parameters. A review has also been presented in [4.41].作者: Asparagus 時間: 2025-3-24 19:15
The Physical Parameters,ing the basic semiconductor equations is only fqasible with at least qualitative knowledge of the associated parameters (e.g. sign, smoothness, order of magnitude). Therefore, we shall discuss in this chapter the most important models for the physical parameters. A review has also been presented in [4.41].作者: Hemiplegia 時間: 2025-3-25 01:11 作者: nuclear-tests 時間: 2025-3-25 04:42 作者: 用肘 時間: 2025-3-25 08:39 作者: acrobat 時間: 2025-3-25 11:38
978-3-7091-8754-8Springer-Verlag/Wien 1984作者: 飛鏢 時間: 2025-3-25 15:54 作者: Curmudgeon 時間: 2025-3-25 21:39
https://doi.org/10.1007/978-3-662-44298-2ieal model has to be given. The equations which form this mathematieal model are commonly called the basic semiconductor equations. They can be derived from Maxwell’s equations (2-1), (2-2), (2-3) and (2-4), several relations obtained from solid-state physics knowledge about semiconductors and vario作者: 耐寒 時間: 2025-3-26 03:41
A. Rustemeier-Holtwick,A. Wolpert,M. Siegerde of) is, obviously, one of the prerequisite pieces of input information. Optimal design of a device necessitates the capability to predict the effect of modifying any of the various process steps involved in device fabrication. One principle barrier for predictive device Simulation is the uncertai作者: Pde5-Inhibitors 時間: 2025-3-26 07:17
https://doi.org/10.1007/978-3-662-44298-2ions which we shall have to solve in order to simulate the internal behavior of a device. Process modeling, as sketched in Chapter 3, delivers information about the geometry of a device and the distribution of dopants, whieh can also be considered to be a physical Parameter. As we have already notic作者: 拋棄的貨物 時間: 2025-3-26 11:16
L. Goertz,K. Kuczynski,S. Weskott,A. Wolpertthe questions of existence, uniqueness and structure and smoothness of solutions. These are of importance in both the theoretical context and the practical context, since the knowledge of the structure and smoothness properties of solutions is indeed essential for the selection of appropriate numeri作者: Crohns-disease 時間: 2025-3-26 13:02 作者: 閑聊 時間: 2025-3-26 18:40
Digitale Lernangebote im Feld der Gesundheitraic equations with the values of the dependent variables of the differential equations at discrete points as unknowns. For the considerations in this chapter we adopt the following nomenclature for the system of discretized equations:.. is a vector funetion of rank three which itself consists of th作者: 座右銘 時間: 2025-3-26 23:59 作者: 朦朧 時間: 2025-3-27 01:32 作者: 低三下四之人 時間: 2025-3-27 09:08 作者: SEEK 時間: 2025-3-27 10:09
A. Rustemeier-Holtwick,A. Wolpert,M. Siegererally the various processing steps of device fabrication have been developed, and they have proven to be extremely valuable tools, e. g. ICECREM [3.64], [3.67]; LADIS [3.76]; MEMBRE [3.54]; RECIPE [3.73]; SUPRA [3.15], [3.38], [3.39], [3.50] and the extraordinarily well established SUPREM program [作者: Ischemia 時間: 2025-3-27 17:13
L. Goertz,K. Kuczynski,S. Weskott,A. Wolperturrent relations will become potentially incorrect if one of the above cited effects would change the equations in a dominating manner (cf. Section 2.3). We shall also ignore the impact of a non- homogeneous temperature distribution on the basic semiconductor equations for the following analytical i作者: Subjugate 時間: 2025-3-27 18:22 作者: 樣式 時間: 2025-3-27 22:21
Digitale Lernangebote im Feld der Gesundheitree vectors . equals .. This is not a necessary assumption but it will simplify the notation. It may well happen for practical applications that the rank of . differs from the rank of . and . (e.g., when the Laplaee equation is solved in an insulator). For our purpose, the scalar rank of . and . is 作者: 模仿 時間: 2025-3-28 04:49 作者: grotto 時間: 2025-3-28 09:42 作者: 喚起 時間: 2025-3-28 14:16
The Discretization of the Basic Semiconductor Equations,es at discrete points in the domain and knowledge of the structure of the chosen funetions which approximate the dependent variables within each of the subdomains. In that way one obtains a fairly large system of, in general nonlinear, algebraic equations with unknowns comprised of approximations of作者: 不能和解 時間: 2025-3-28 16:40 作者: FLINT 時間: 2025-3-28 22:14 作者: Gourmet 時間: 2025-3-29 01:54 作者: objection 時間: 2025-3-29 05:47
10樓作者: sphincter 時間: 2025-3-29 08:23
10樓作者: harbinger 時間: 2025-3-29 12:04
10樓作者: Cupping 時間: 2025-3-29 18:11
10樓
