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標(biāo)題: Titlebook: Analog IC Reliability in Nanometer CMOS; Elie Maricau,Georges Gielen Book 2013 Springer Science+Business Media New York 2013 Analog Circui [打印本頁]

作者: TUMOR    時間: 2025-3-21 17:30
書目名稱Analog IC Reliability in Nanometer CMOS影響因子(影響力)




書目名稱Analog IC Reliability in Nanometer CMOS影響因子(影響力)學(xué)科排名




書目名稱Analog IC Reliability in Nanometer CMOS網(wǎng)絡(luò)公開度




書目名稱Analog IC Reliability in Nanometer CMOS網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Analog IC Reliability in Nanometer CMOS被引頻次




書目名稱Analog IC Reliability in Nanometer CMOS被引頻次學(xué)科排名




書目名稱Analog IC Reliability in Nanometer CMOS年度引用




書目名稱Analog IC Reliability in Nanometer CMOS年度引用學(xué)科排名




書目名稱Analog IC Reliability in Nanometer CMOS讀者反饋




書目名稱Analog IC Reliability in Nanometer CMOS讀者反饋學(xué)科排名





作者: 刪減    時間: 2025-3-21 22:17
Elie Maricau,Georges GielenEnables readers to understand long-term reliability of an integrated circuit.Reviews CMOS unreliability effects, with focus on those that will emerge in future CMOS nodes.Provides overview of models f
作者: lesion    時間: 2025-3-22 01:34

作者: Ingredient    時間: 2025-3-22 04:39
Introduction,or aging on analog integrated circuits (IC) in a nanometer complementary metal-oxide-semiconductor (CMOS) technology. The first chapter of this work introduces the problem studied and the major subjects addressed in this book.
作者: Seminar    時間: 2025-3-22 10:25

作者: Irrigate    時間: 2025-3-22 14:14
Analog IC Reliability in Nanometer CMOS978-1-4614-6163-0Series ISSN 1872-082X Series E-ISSN 2197-1854
作者: bioavailability    時間: 2025-3-22 17:11

作者: jocular    時間: 2025-3-22 22:25

作者: 單挑    時間: 2025-3-23 04:04
https://doi.org/10.1007/978-1-4614-6163-0Analog Circuits and Signal Processing; Analog Integrated Circuits; Failure-resilient Analog Circuit De
作者: Hypomania    時間: 2025-3-23 08:52
978-1-4899-8630-6Springer Science+Business Media New York 2013
作者: 是他笨    時間: 2025-3-23 10:02

作者: 宣誓書    時間: 2025-3-23 15:24
Heribert Meffert,Ralf Birkelbach for semiconductors 2011). This trend is driven by a seemingly unending demand for ever-better performance and by fierce global competition. The steady CMOS technology downscaling is needed to meet requirements on speed, complexity, circuit density, power consumption and ultimately cost required by
作者: apiary    時間: 2025-3-23 21:22
Heribert Meffert,Ralf Birkelbacht performance at design time. This results in huge savings in development costs and enables a designer to maximize the performance of his or her circuit in a particular technology. Over time, computer-aided design (CAD) software has become more complex and more and more aspects related to IC develop
作者: 喪失    時間: 2025-3-23 23:06
https://doi.org/10.1007/978-3-322-91158-2implementation of a reliability simulation framework in each of the major commercial SPICE simulators, there are still a lot of deficiencies remaining (also see Sect.?4.4). Especially with the evolution to ever-smaller CMOS devices, statistical effects resulting from process variations and stochasti
作者: BLOT    時間: 2025-3-24 05:04
https://doi.org/10.1007/978-3-322-91158-2, aging effects become more important for circuits integrated in sub-45?nm technologies (see Chap.?2). To guarantee circuit reliability over a product’s lifetime, a foundry typically performs accelerated stress measurements on individual devices and calculates the maximum transistor operating voltag
作者: 頑固    時間: 2025-3-24 06:38
Heribert Meffert,Ralf Birkelbachistor aging effects have been studied and compact models for each important effect have been developed. Also, a circuit reliability simulation flow has been proposed. Finally, the flow has been applied to a set of analog circuits and the impact of aging has been studied.
作者: Dedication    時間: 2025-3-24 11:50

作者: 煩擾    時間: 2025-3-24 15:23

作者: 階層    時間: 2025-3-24 20:23

作者: 特征    時間: 2025-3-25 02:39
Analog IC Reliability Simulation,implementation of a reliability simulation framework in each of the major commercial SPICE simulators, there are still a lot of deficiencies remaining (also see Sect.?4.4). Especially with the evolution to ever-smaller CMOS devices, statistical effects resulting from process variations and stochasti
作者: Ballad    時間: 2025-3-25 03:58
Integrated Circuit Reliability,, aging effects become more important for circuits integrated in sub-45?nm technologies (see Chap.?2). To guarantee circuit reliability over a product’s lifetime, a foundry typically performs accelerated stress measurements on individual devices and calculates the maximum transistor operating voltag
作者: Largess    時間: 2025-3-25 09:45
Conclusions,istor aging effects have been studied and compact models for each important effect have been developed. Also, a circuit reliability simulation flow has been proposed. Finally, the flow has been applied to a set of analog circuits and the impact of aging has been studied.
作者: 方便    時間: 2025-3-25 13:32

作者: Bouquet    時間: 2025-3-25 16:11

作者: defeatist    時間: 2025-3-26 00:01
Heribert Meffert,Ralf Birkelbachy CMOS technology downscaling is needed to meet requirements on speed, complexity, circuit density, power consumption and ultimately cost required by many advanced applications. However, going to these ultra-scaled CMOS devices also brings some drawbacks.
作者: armistice    時間: 2025-3-26 01:07

作者: 依法逮捕    時間: 2025-3-26 07:53
Analog IC Reliability Simulation,c aging effects become more and more important. On top of that, most academic and commercial simulators are limited to the simulation of rather small circuits. Accurate reliability evaluation of large analog or mixed-signal circuits is therefore still not possible.
作者: Cardiac    時間: 2025-3-26 10:53

作者: Esophagus    時間: 2025-3-26 13:48

作者: 我怕被刺穿    時間: 2025-3-26 18:26

作者: ARIA    時間: 2025-3-27 00:38

作者: 羊欄    時間: 2025-3-27 03:18

作者: commensurate    時間: 2025-3-27 07:49
https://doi.org/10.1007/978-3-322-91158-2es allowed in the technology process. The latter are typically defined as the stress voltage for which the drain current or threshold voltage does not exceed a given reliability margin (e.g. . or .?mV after . years) (also see Sect.?1.5).
作者: 轉(zhuǎn)向    時間: 2025-3-27 13:00
V. V. Toropov,F. Yoshida,E. van der Giessenome due to COVID-19 restrictions, and difficulty accessing daily supplies during the lockdown affected the residents’ risk assessment and evacuation decision-making negatively. Insights into these aspects are expected to contribute to a better understanding of evacuation behavior during double disas
作者: 輕觸    時間: 2025-3-27 16:20
Ramachandran Ishwarya,Govindan Tamilmani,Rengarajan Jayakumar main categories of information systems flexibility impacts on the information systems strategy implementation. Our study contributes to the new information technology adoption literature and provides implications for information technology adoption in practice.
作者: 過渡時期    時間: 2025-3-27 20:12
Die Reibung von Nickel auf Nickel im Vakuumtstellen abzuscheren. Diese Haftstellen sind nicht aufzufassen als die Berührungsstellen zweier, an sich selbst?ndiger K?rper; vielmehr flie?en hier beide K?rper zu einem einheitlichen Ganzen zusammen, es hat Kaltverschwei?ung stattgefunden. Bei der ?Reibung“ werden diese Schwei?stellen immer wieder
作者: 宴會    時間: 2025-3-28 01:23

作者: NIB    時間: 2025-3-28 03:59

作者: MAL    時間: 2025-3-28 06:49





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