標題: Titlebook: Analog Circuit Design; Sensors, Actuators a Herman Casier,Michiel Steyaert,Arthur H. M. Roermu Book 2008 Springer Science+Business Media B. [打印本頁] 作者: Herbaceous 時間: 2025-3-21 17:32
書目名稱Analog Circuit Design影響因子(影響力)
書目名稱Analog Circuit Design影響因子(影響力)學科排名
書目名稱Analog Circuit Design網絡公開度
書目名稱Analog Circuit Design網絡公開度學科排名
書目名稱Analog Circuit Design被引頻次
書目名稱Analog Circuit Design被引頻次學科排名
書目名稱Analog Circuit Design年度引用
書目名稱Analog Circuit Design年度引用學科排名
書目名稱Analog Circuit Design讀者反饋
書目名稱Analog Circuit Design讀者反饋學科排名
作者: ascend 時間: 2025-3-21 22:13 作者: 能量守恒 時間: 2025-3-22 00:51
An Inductive Position Sensor ASICctive contact-less sensor is suitable for angular or linear position sensing. Advantage of used measurement principle is, that it is strictly ratio metric independent of absolute values. The mechanical robustness, insensitivity to temperature variation, electrical or magnetic fields as well as its m作者: Vertical 時間: 2025-3-22 08:27 作者: fender 時間: 2025-3-22 12:29
Protection and Diagnosis of Smart Power High-Side Switches in Automotive Applicationsh reliability and complex power management of modules in a car. This paper describes aspects and challenges of designing smart power high-side switches embedded in automotive systems to drive inductive, capacitive and resistive loads.作者: Arroyo 時間: 2025-3-22 13:45
Integrated CMOS Power Amplifiers for Highly Linear Broadband Communication the PA building block. Further we will discuss the importance of the power grid on the stability of the PA. Finally a single-ended integrated PA, part of a WiMedia/MBOA compliant UWB transceiver, is presented.作者: concert 時間: 2025-3-22 18:21 作者: 保守黨 時間: 2025-3-23 00:48
Switched RF Transmittersation technique is presented. This technique is analog to the linear amplification by a class D-amplifier at baseband. By pulse-width modulation of the signal envelope, the class-D operation is extended towards RF systems too..The spurious emissions generated by the switching operation, are well sep作者: 性行為放縱者 時間: 2025-3-23 04:13 作者: MUMP 時間: 2025-3-23 07:11 作者: expository 時間: 2025-3-23 11:30
Systems and Architectures for Very High Frequency Radio Links and higher cost of technologies and packaging, applications at these frequencies only make sense when the special properties of these high frequencies are offering clear advantages for these applications. Such advantages can be higher system capacity, better security and privacy, or higher spatial 作者: Gullible 時間: 2025-3-23 17:15
Key Building Blocks for Millimeter-Wave IC Design in Baseline CMOSuced. Starting from passive and active devices, trade-offs between technology, performance and circuit choices of millimeter-wave RF front-end circuits are discussed. In particular, power consumption, noise and linearity trade-offs in low-noise amplifiers, mixers, frequency dividers and oscillators 作者: 館長 時間: 2025-3-23 18:21 作者: 發(fā)電機 時間: 2025-3-24 01:11 作者: 惰性氣體 時間: 2025-3-24 03:39
Chaired by Prof. Michiel Steyaert, Catholic University, Leuven; (3) Very High Frequency Front Ends (Thu 29 March) - Chaired by Prof. Arthur van Roermund, Eindhoven University of Technology..978-90-481-7824-7978-1-4020-8263-4作者: comely 時間: 2025-3-24 09:43
Protection and Diagnosis of Smart Power High-Side Switches in Automotive Applicationsh reliability and complex power management of modules in a car. This paper describes aspects and challenges of designing smart power high-side switches embedded in automotive systems to drive inductive, capacitive and resistive loads.作者: 高原 時間: 2025-3-24 13:30 作者: machination 時間: 2025-3-24 17:32
https://doi.org/10.1007/978-1-4020-8263-4ASIC; CMOS; Sensor; analog circuit design; circuit; circuit design; communication; diagnosis; imaging; integr作者: outset 時間: 2025-3-24 23:01 作者: 枕墊 時間: 2025-3-25 00:35
Die ?tiologie der B?sartigen Geschwülsteations above 10 GHz and up to 77 GHz are already emerging. Systems become more complex and devices need to operate at several different frequency bands using different wireless standards. The rf-front end sections of these devices are characterized by a high diversity of components, in particular hi作者: 燒烤 時間: 2025-3-25 06:22 作者: 知識 時間: 2025-3-25 07:48 作者: languid 時間: 2025-3-25 13:17
https://doi.org/10.1007/978-3-642-91719-6e continuation of a work presented at the International Solid State Circuits Conference (ISSCC) 2007 in San Francisco/USA [1]. The device’s analog part consists of Hall based three-axis magnetic field transducer with integrated magnetic concentrator that operates as passive magnetic amplifier. The a作者: epinephrine 時間: 2025-3-25 18:59
Die ?ussere Sekretion der Verdauungsdrüsenh reliability and complex power management of modules in a car. This paper describes aspects and challenges of designing smart power high-side switches embedded in automotive systems to drive inductive, capacitive and resistive loads.作者: 淡紫色花 時間: 2025-3-25 21:55
https://doi.org/10.1007/978-3-662-35264-9 the PA building block. Further we will discuss the importance of the power grid on the stability of the PA. Finally a single-ended integrated PA, part of a WiMedia/MBOA compliant UWB transceiver, is presented.作者: chalice 時間: 2025-3-26 03:49
https://doi.org/10.1007/978-3-662-42504-6the RF PA designer, and the different trade-offs, encountered during the design process, are clearly indicated. The idea of power combining is introduced and it is clarified how this technique can alleviate some of the problems related to the aggressive CMOS scaling. The theory is clarified by sever作者: creatine-kinase 時間: 2025-3-26 06:07
,Die Pathogenese der ?demkrankheit,ation technique is presented. This technique is analog to the linear amplification by a class D-amplifier at baseband. By pulse-width modulation of the signal envelope, the class-D operation is extended towards RF systems too..The spurious emissions generated by the switching operation, are well sep作者: hazard 時間: 2025-3-26 11:55
Die ?ffentlichkeiten der ErziehungBoth transceiver topology and signaling protocol are described. High-speed differential and CMOS signaling are merged on the same wires. The signaling scheme contains link power management features and provides multiple communication modes to adapt efficiently to bandwidth needs. This interface has 作者: CLOT 時間: 2025-3-26 15:05 作者: 清楚說話 時間: 2025-3-26 20:10
Interaktionsstr?nge der Kommunen and higher cost of technologies and packaging, applications at these frequencies only make sense when the special properties of these high frequencies are offering clear advantages for these applications. Such advantages can be higher system capacity, better security and privacy, or higher spatial 作者: FOR 時間: 2025-3-26 23:30
Das Bild des diskreditierten Staatesuced. Starting from passive and active devices, trade-offs between technology, performance and circuit choices of millimeter-wave RF front-end circuits are discussed. In particular, power consumption, noise and linearity trade-offs in low-noise amplifiers, mixers, frequency dividers and oscillators 作者: Orgasm 時間: 2025-3-27 03:53
Exkurs: Umsteuern im Verkehrssektor,cussed along with the detailed comparison of VCOs, LNAs, PAs and static frequency dividers fabricated in CMOS and SiGe BiCMOS, as required for automotive cruise-control radar, high data-rate radio, and active and passive imaging in the 80GHz to 160GHz range. It is demonstrated experimentally that pr作者: 鋪子 時間: 2025-3-27 06:37 作者: Anticoagulant 時間: 2025-3-27 10:00 作者: 我的巨大 時間: 2025-3-27 17:40 作者: 弄皺 時間: 2025-3-27 18:29
Herman Casier,Michiel Steyaert,Arthur H. M. RoermuThe 14th book on the highlights of the Advances in Analog Circuit Design workshop that Springer will publish.The annual workshop is recognized as being a leading international meeting of analog and RF作者: Erythropoietin 時間: 2025-3-28 00:14
http://image.papertrans.cn/a/image/155812.jpg作者: 性冷淡 時間: 2025-3-28 05:01
Interaktionsstr?nge der KommunenAn overview of analog and RF design concepts in silicon process technologies is presented, with the focus on high-power applications at mmWave frequencies and above. Key power amplifier design tradeoffs and high-frequency trends will be given. This includes power amplifier circuit design and packaging examples at 60 GHz.作者: 畸形 時間: 2025-3-28 10:05
Analog/RF Design Concepts for High-Power Silicon Based mmWave and THz ApplicationsAn overview of analog and RF design concepts in silicon process technologies is presented, with the focus on high-power applications at mmWave frequencies and above. Key power amplifier design tradeoffs and high-frequency trends will be given. This includes power amplifier circuit design and packaging examples at 60 GHz.作者: 枯燥 時間: 2025-3-28 10:59
Book 2008dvanced analogue and RF circuits for the purpose of studying and discussing new possibilities and future developments in this field. Selected topics for AACD 2007 are: (1) Sensors, Actuators and Power Drivers for the Automotive and Industrial Environment (Tue 27 March) - Chaired by Herman Casier, AM作者: Lignans 時間: 2025-3-28 17:40 作者: Nutrient 時間: 2025-3-28 21:00 作者: micronutrients 時間: 2025-3-28 23:35
,Die Pathogenese der ?demkrankheit,e signal envelope, the class-D operation is extended towards RF systems too..The spurious emissions generated by the switching operation, are well separated from the signal band by the use of an asynchronous pulse-width modulator. Measurements on a test-chip prove the feasibility of the switching technique.作者: stress-test 時間: 2025-3-29 03:23
Die ?ffentlichkeiten der Erziehung scheme contains link power management features and provides multiple communication modes to adapt efficiently to bandwidth needs. This interface has been implemented in 65nm CMOS and measurement results are shown.作者: chisel 時間: 2025-3-29 09:07
Das Bild des diskreditierten Staatess are discussed. In particular, power consumption, noise and linearity trade-offs in low-noise amplifiers, mixers, frequency dividers and oscillators are considered. The concepts derived are applied to a large class of wireless communications standards that are broadband in nature at RF and/or require a broadband IF.作者: 連鎖 時間: 2025-3-29 12:40
Power Combining Techniques for RF and mm-Wave CMOS Power Amplifiersced and it is clarified how this technique can alleviate some of the problems related to the aggressive CMOS scaling. The theory is clarified by several design examples that cover a frequency range from the lower GHz as high as 60 GHz.作者: Acquired 時間: 2025-3-29 15:38 作者: Ejaculate 時間: 2025-3-29 21:30 作者: 裝入膠囊 時間: 2025-3-29 23:52 作者: KIN 時間: 2025-3-30 07:39
Heterogeneous Integration of Passive Components for the Realization of RF-System-in-Packagesgh precision passive components. In order to be produced cost-effectively, these elements need to be integrated along with the semiconductor devices. This paper describes the requirements for successful integration of rf-passive devices and proposes multilayer thin film technology as an effective rf-integration technology.作者: 悠然 時間: 2025-3-30 10:53
An Inductive Position Sensor ASICechanical tolerances make the sensor ideal for harsh automotive environment. The sensor fulfils all the requirements for safety relevant applications. The presented ASIC includes sensor excitation, precise input signal analog and digital processing as well as the output signal transmitter. The signal path and main blocks are described.作者: Synthesize 時間: 2025-3-30 12:29 作者: 群居動物 時間: 2025-3-30 20:26
A Comparison of CMOS and BiCMOS mm-Wave Receiver Circuits for Applications at 60GHz and Beyondy dictate the technology choice. The trade-offs between CMOS and Bipolar/BiCMOS technologies for mm-wave receiver circuits are outlined in this paper. Realizing low-noise performance and gain flatness over a wide bandwidth is used as a case study from both the circuit and system points of view.
