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標(biāo)題: Titlebook: Amorphous and Crystalline Silicon Carbide IV; Proceedings of the 4 Cary Y. Yang,M. Mahmudur Rahman,Gary L. Harris Conference proceedings 19 [打印本頁]

作者: cerebral-cortex 時間: 2025-3-21 19:08
書目名稱Amorphous and Crystalline Silicon Carbide IV影響因子(影響力)

書目名稱Amorphous and Crystalline Silicon Carbide IV影響因子(影響力)學(xué)科排名

書目名稱Amorphous and Crystalline Silicon Carbide IV網(wǎng)絡(luò)公開度

書目名稱Amorphous and Crystalline Silicon Carbide IV網(wǎng)絡(luò)公開度學(xué)科排名

書目名稱Amorphous and Crystalline Silicon Carbide IV被引頻次

書目名稱Amorphous and Crystalline Silicon Carbide IV被引頻次學(xué)科排名

書目名稱Amorphous and Crystalline Silicon Carbide IV年度引用

書目名稱Amorphous and Crystalline Silicon Carbide IV年度引用學(xué)科排名

書目名稱Amorphous and Crystalline Silicon Carbide IV讀者反饋

書目名稱Amorphous and Crystalline Silicon Carbide IV讀者反饋學(xué)科排名

作者: adj憂郁的 時間: 2025-3-21 23:36

作者: Graves’-disease 時間: 2025-3-22 03:35
https://doi.org/10.1007/978-3-642-84804-9SiGe; band structure; crystal; development; diodes; electron; electronic material; hydrogen; laser; material;

作者: Licentious 時間: 2025-3-22 08:02

作者: NAV 時間: 2025-3-22 09:15

作者: mydriatic 時間: 2025-3-22 13:56

作者: ornithology 時間: 2025-3-22 19:07

作者: Acclaim 時間: 2025-3-22 23:21
https://doi.org/10.1007/978-3-662-28982-2ilms on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced d

作者: 譏諷 時間: 2025-3-23 05:18
https://doi.org/10.1007/978-3-662-31626-9th of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0.1.)C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer mode

作者: 羽毛長成 時間: 2025-3-23 07:53
https://doi.org/10.1007/978-3-662-31626-9.. The crystallinity of the grown SiC layer is influenced by orientation of Si substrates. A single crystalline 3C-SiC has been grown on Si(111) face, while a polycrystalline 3C-SiC on Si (001) face. A growth rate of SiC with alternate gas supply is almost 3 ML/cycle and independent of the duration

作者: sulcus 時間: 2025-3-23 11:42

作者: 正式演說 時間: 2025-3-23 16:36

作者: ALIEN 時間: 2025-3-23 20:09

作者: 爵士樂 時間: 2025-3-24 00:28

作者: accrete 時間: 2025-3-24 04:09

作者: 外貌 時間: 2025-3-24 07:50
Auswirkungen auf die Konzernsteuerpolitik°C is observed both for Si.H. exposures onto a carbon terminated surface and for C.H. exposures onto a silicon covered surface. Further, about one monolayer of a silicon-covered surface is etched by exposing to oxygen at 1050°C. The resultant etched surface is carbon-covered surface.

作者: CLASH 時間: 2025-3-24 13:49
Problemstellung und Zielsetzungerials and pressure are reported in this paper. A SiC source with unintentional impurities resulted in the creation of a number of striated defects during the initial stage of crystal growth. Three kinds of etch pits (EP-1, EP-2 and EP-3) were observed. The incidence of small-size EP-3 etch pits was

作者: 違反 時間: 2025-3-24 17:56

作者: ANTH 時間: 2025-3-24 19:01

作者: 碎石頭 時間: 2025-3-25 02:46
,Die Bausparkassen als Kooperationstr?ger,ting in extreme environments: high temperature, radiation etc. In recent years considerable progress has been achieved in fabrication of semiconductor devices in 3C-SiC. However, the problem of producing good-quality and low-cost substrates of large enough dimensions is still unsolved. CVD- growth o

作者: 缺乏 時間: 2025-3-25 07:05
https://doi.org/10.1007/978-3-322-88007-9trate temperature of 750 °C-1150°C. When the ratio of SiH. to CH. (Si/C) increases, the structures of films changed from amorphous to polycrystalline loaded with excess Si at a low substrate temperature less than 1000° C, reflecting a Si radical steeply increases and a H radical is saturated. Excess

作者: precede 時間: 2025-3-25 10:41
,Die Bausparkassen als Kooperationstr?ger,ctral regions from 400 to 700 cm. and 1000 to 1250 cm.. The observed lines are assigned to electronic transitions of nitrogen donors residing at three inequivalent lattice sites (h,k.,k.). A valley-orbit splitting of the ground state of 12.6 meV is determined for nitrogen donors on hexagonal sites;

作者: 流浪 時間: 2025-3-25 12:26

作者: Ornithologist 時間: 2025-3-25 15:57
Auswirkungen auf die Konzernsteuerpolitik°C is observed both for Si.H. exposures onto a carbon terminated surface and for C.H. exposures onto a silicon covered surface. Further, about one monolayer of a silicon-covered surface is etched by exposing to oxygen at 1050°C. The resultant etched surface is carbon-covered surface.

作者: 江湖郎中 時間: 2025-3-25 22:43

作者: 不可磨滅 時間: 2025-3-26 04:11

作者: FEAS 時間: 2025-3-26 07:22

作者: 有危險 時間: 2025-3-26 11:42
Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Waferilms on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced d

作者: constitutional 時間: 2025-3-26 14:28
Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Methodth of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0.1.)C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer mode

作者: isotope 時間: 2025-3-26 20:14

作者: 同位素 時間: 2025-3-26 22:35

作者: 使害怕 時間: 2025-3-27 03:27

作者: beta-carotene 時間: 2025-3-27 08:31
Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substratesal growth of SiC. The Coulomb potential for atoms at two different sites on the surface of substrates, which induced by atomic arrays in substrates, was calculated by changing the interaction length. The dependence of surface potential on the stacking sequence of atoms in substrates was investigated

作者: 敲詐 時間: 2025-3-27 11:57

作者: 收集 時間: 2025-3-27 14:55
Growth and Characterization of ,-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxyre obtained at temperatures as low as 1248 K, as confirmed by electron diffraction. The latter films were specularly reflective. However, SEM revealed growth pits extending to the SiC surface as well as preferential growth on the pit edges. Cross-sectional TEM analysis confirmed the epitaxial relati

作者: 平庸的人或物 時間: 2025-3-27 19:03
Atomic Layer Control of ,-SiC(001) Surface°C is observed both for Si.H. exposures onto a carbon terminated surface and for C.H. exposures onto a silicon covered surface. Further, about one monolayer of a silicon-covered surface is etched by exposing to oxygen at 1050°C. The resultant etched surface is carbon-covered surface.

作者: 小步走路 時間: 2025-3-27 22:17
Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Methoderials and pressure are reported in this paper. A SiC source with unintentional impurities resulted in the creation of a number of striated defects during the initial stage of crystal growth. Three kinds of etch pits (EP-1, EP-2 and EP-3) were observed. The incidence of small-size EP-3 etch pits was

作者: lipids 時間: 2025-3-28 05:24
Liquid Phase Epitaxy of SiC-AlN Solid Solutionsthe concentration of the AlN component in the epitaxial layers range from 2 to 10 percent, depending on the growth conditions. Element’s distribution across the layer was uniform. X-ray difraction data indicated that layers are monocrystalline. Intense cathodoluminescence from the layers was recorde

作者: enormous 時間: 2025-3-28 06:39
Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sourcesitaxial single crystal films of 3C and 6H SiC from a variety of sources. We use a model based on group theory to argue that the origin of these lines is the recombination of an exciton in an acceptor four particle complex.

作者: 遍及 時間: 2025-3-28 13:11
Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 Systemting in extreme environments: high temperature, radiation etc. In recent years considerable progress has been achieved in fabrication of semiconductor devices in 3C-SiC. However, the problem of producing good-quality and low-cost substrates of large enough dimensions is still unsolved. CVD- growth o

作者: irreparable 時間: 2025-3-28 16:45
AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substratetrate temperature of 750 °C-1150°C. When the ratio of SiH. to CH. (Si/C) increases, the structures of films changed from amorphous to polycrystalline loaded with excess Si at a low substrate temperature less than 1000° C, reflecting a Si radical steeply increases and a H radical is saturated. Excess

作者: falsehood 時間: 2025-3-28 21:23
Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiCctral regions from 400 to 700 cm. and 1000 to 1250 cm.. The observed lines are assigned to electronic transitions of nitrogen donors residing at three inequivalent lattice sites (h,k.,k.). A valley-orbit splitting of the ground state of 12.6 meV is determined for nitrogen donors on hexagonal sites;

作者: 壓迫 時間: 2025-3-29 02:50
Conference proceedings 19921st editionributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods,characterization, andmodels expla

作者: 女歌星 時間: 2025-3-29 03:56
Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method found to be effectively reduced by increasing the processing pressure. 6H-SiC single crystals with a lower defect density were fabricated using pure source material at 2300°C: Etch pit densities were 作者: 額外的事 時間: 2025-3-29 08:55
Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 Systemf large-area 3C-SiC on other materials, e.g. silicon[l–5], has become extensively used. With a 20% lattice mismatch between the 3C-SiC layer and the Si substrate the growth of good-quality epitaxial layers presents considerable technological difficulties.

作者: Dorsal-Kyphosis 時間: 2025-3-29 13:57

作者: 脆弱吧 時間: 2025-3-29 18:08

作者: OVERT 時間: 2025-3-29 21:38

作者: dapper 時間: 2025-3-30 03:11
Belastungen der Konzentrationslagerhaft,1050°C to ～18 ? /sec at 1300°C, yielding an activation energy for the process of 1.5 ± 0.25 eV. A dramatic improvement in film thickness uniformity was observed at low pressure, resulting in a standard deviation of less than 5% over an entire 7.5 cm diameter wafer.

作者: Organization 時間: 2025-3-30 06:29
Auswirkungen auf die Konzernsteuerpolitikoriented 6H-SiC substrates can be explained. Possibility of DPB-free 3C-SiC growth on a 15R-SiC substrate is predicted. By simultaneous chemical vapor deposition growth on well-oriented 6H-SiC(0001) and 15R-SiC(0001), the prediction was experimentally verified.

作者: 大包裹 時間: 2025-3-30 08:39

作者: Mangle 時間: 2025-3-30 16:18

作者: INTER 時間: 2025-3-30 17:01

作者: 煩躁的女人 時間: 2025-3-30 22:22
Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substratesoriented 6H-SiC substrates can be explained. Possibility of DPB-free 3C-SiC growth on a 15R-SiC substrate is predicted. By simultaneous chemical vapor deposition growth on well-oriented 6H-SiC(0001) and 15R-SiC(0001), the prediction was experimentally verified.

作者: arsenal 時間: 2025-3-31 04:52

作者: 盡責(zé) 時間: 2025-3-31 06:39

作者: Mri485 時間: 2025-3-31 10:32

作者: Precursor 時間: 2025-3-31 15:37
https://doi.org/10.1007/978-3-322-88007-9 Si in the SiC films disappeared by applying a substrate bias, suggesting H radicals excited by electrons extract excess Si from the films. The plasma assists the dissociation of source materials and the cleaning effects of the growing surfaces by reactive species. The substrate bias enhances the surface reactions and crystallization.

作者: 聯(lián)合 時間: 2025-3-31 20:31
0930-8989 s.The contributions to thisvolume report recent developments and trends in the field.The purpose is to make available the current state ofunderstanding of the materials and their potentialapplications. Eachcontribution focuses on a particulartopic, such as preparation methods,characterization, andmo

作者: 調(diào)味品 時間: 2025-4-1 00:25
https://doi.org/10.1007/978-3-322-98951-2 future development, is discussed in detail. Growth mechanism and effects of off-direction and off-angle are described. As an advanced epitaxial growth, atomic level control in SiC crystal growth by gas source MBE is given.

作者: 大范圍流行 時間: 2025-4-1 04:11

作者: 尊重 時間: 2025-4-1 07:25
https://doi.org/10.1007/978-3-662-31626-9e activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer model in which crystal growth is controlled by diffusion of reactants in a stagnant layer.

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