標題: Titlebook: Festk?rperprobleme 24; P. Grosse Book 1984 Springer-Verlag Berlin Heidelberg 1984 Elektron.Halbleiter.Phasenübergang.Polymer.Streuung.Wass [打印本頁] 作者: Daguerreotype 時間: 2025-3-21 18:02
書目名稱Festk?rperprobleme 24影響因子(影響力)
書目名稱Festk?rperprobleme 24影響因子(影響力)學科排名
書目名稱Festk?rperprobleme 24網(wǎng)絡公開度
書目名稱Festk?rperprobleme 24網(wǎng)絡公開度學科排名
書目名稱Festk?rperprobleme 24被引頻次
書目名稱Festk?rperprobleme 24被引頻次學科排名
書目名稱Festk?rperprobleme 24年度引用
書目名稱Festk?rperprobleme 24年度引用學科排名
書目名稱Festk?rperprobleme 24讀者反饋
書目名稱Festk?rperprobleme 24讀者反饋學科排名
作者: 頌揚本人 時間: 2025-3-22 00:16
Transport and recombination in hydrogenated amorphous silicon,its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.作者: Barter 時間: 2025-3-22 03:38 作者: intertwine 時間: 2025-3-22 07:40
https://doi.org/10.1007/978-3-319-16817-3imensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to . . = h/作者: 枯燥 時間: 2025-3-22 11:56 作者: reject 時間: 2025-3-22 16:23 作者: itinerary 時間: 2025-3-22 20:54
Quan Zhou,Shu Cai,Shaojun Zhu,Baoyu Zhengications experimental data on the electrical conductivity and its temperature and frequency dependence are reviewed. These data are discussed within the framework of a model involving fluctuation-induced tunneling between macroscopic inhomogeneities and energy dependent hopping of charge carriers be作者: oncologist 時間: 2025-3-22 21:21
https://doi.org/10.1007/978-3-319-16808-1its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.作者: 兇兆 時間: 2025-3-23 01:24
Lecture Notes in Computer Scienceht of as an ., the defect providing an environment in which a net attraction can develop between the otherwise Coulombically repulsive carriers. Evidence previously cited for this behavior in selected liquid and solid state systems will be reviewed. Recently, the first direct and unambiguous demonst作者: 保留 時間: 2025-3-23 09:00
Aparna Taneja,Luca Ballan,Marc Pollefeysdoped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma作者: UNT 時間: 2025-3-23 10:27 作者: 有角 時間: 2025-3-23 15:43 作者: landmark 時間: 2025-3-23 19:54
T. A. Sumesh,Vinay Namboodiri,Phalguni Guptanductor devices, especially field-effect transistors..In this paper first the present status of commercially available GaAs-MESFETs (homostructure FET) is described. Then means of improving these devices by shrinking the dimensions and increasing the dopant concentrations are discussed. The possibil作者: Mammal 時間: 2025-3-23 22:32
https://doi.org/10.1007/978-981-15-1387-9s will be available. Since the required cooling power usually is quite small the design of such cryocoolers is governed by factors like electromagnetic interference signals, mechanical vibrations, and long maintenance free operation periods. Two cryocoolers, which are presently being further develop作者: cardiopulmonary 時間: 2025-3-24 02:23
Festk?rperprobleme 24978-3-540-75374-2Series ISSN 1438-4329 Series E-ISSN 1617-5034 作者: 臭了生氣 時間: 2025-3-24 10:29
1438-4329 Overview: 978-3-540-75374-2Series ISSN 1438-4329 Series E-ISSN 1617-5034 作者: 逢迎春日 時間: 2025-3-24 13:24
https://doi.org/10.1007/978-3-319-16808-1its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.作者: Temporal-Lobe 時間: 2025-3-24 16:07
Advances in Solid State Physicshttp://image.papertrans.cn/a/image/149813.jpg作者: 我們的面粉 時間: 2025-3-24 19:34 作者: Pageant 時間: 2025-3-25 03:01
Springer-Verlag Berlin Heidelberg 1984作者: BOOST 時間: 2025-3-25 03:26 作者: Hallowed 時間: 2025-3-25 08:12
Optical properties of discontinuous thin films and rough surfaces of silver,Discontinuous metal films have characteristics optical properties which can be related to many sources. They are discussed using silver as a particular metal. Surface roughness induces also some characteristics optical effects which are discussed also using silver as a model metal.作者: 手勢 時間: 2025-3-25 14:29 作者: 簡潔 時間: 2025-3-25 18:21 作者: curriculum 時間: 2025-3-25 20:11 作者: 男學院 時間: 2025-3-26 02:25 作者: PALSY 時間: 2025-3-26 07:34
Aparna Taneja,Luca Ballan,Marc Pollefeysved with infrared-absorption spectroscopy. With this method the formation kinetics of thermal donors may be investigated also. Examples for corresponding results are given and several models for thermal donors are discussed.作者: 流出 時間: 2025-3-26 11:08
T. A. Sumesh,Vinay Namboodiri,Phalguni Guptanfluence of the better transport properties of heterostructures (as compared to homostructures) is discussed. Finally the consequences of higher device speed on integrated circuit performance are demonstrated using a simple circuit example.作者: nonsensical 時間: 2025-3-26 15:43 作者: Veneer 時間: 2025-3-26 20:39
https://doi.org/10.1007/978-3-319-16817-3amples, investigations by IETS on sublimated phthalocyanine dye molecules, on ultrahigh vacuum prepared Al/Al oxide/Pb tunnel junctions and on protonirradiated Al/Al oxide+HCOO./Pb tunnel junctions are reviewed. Tunneling measurements performed on n-Si/SiO./metal structures with very thin SiO. layers are reported and the results are discussed.作者: Cocker 時間: 2025-3-26 22:59 作者: 搖曳的微光 時間: 2025-3-27 03:03 作者: 宿醉 時間: 2025-3-27 08:39
Inelastic electron tunneling spectroscopy,amples, investigations by IETS on sublimated phthalocyanine dye molecules, on ultrahigh vacuum prepared Al/Al oxide/Pb tunnel junctions and on protonirradiated Al/Al oxide+HCOO./Pb tunnel junctions are reviewed. Tunneling measurements performed on n-Si/SiO./metal structures with very thin SiO. layers are reported and the results are discussed.作者: Enervate 時間: 2025-3-27 12:47
Miniature refrigerators for cryoelectronic sensors,c interference signals, mechanical vibrations, and long maintenance free operation periods. Two cryocoolers, which are presently being further developed are discussed in some detail: A miniature Joule-Thomson and a small Stirling cryocooler.作者: 傳染 時間: 2025-3-27 14:36
Lattice distortion, elastic interaction, and phase transitions of hydrogen in metals,scopic density modes..X-ray and neutron scattering methods were used to get information on lattice distortions, elastic interaction, and the hydrogen density modes..After an introduction to the scattering, methods and outline of the physical concepts for phase transitions of hydrogen in metals recent experimental results are presented.作者: institute 時間: 2025-3-27 17:59 作者: Optimum 時間: 2025-3-27 22:15
High-speed homo- and heterostructure field-effect transistors,nfluence of the better transport properties of heterostructures (as compared to homostructures) is discussed. Finally the consequences of higher device speed on integrated circuit performance are demonstrated using a simple circuit example.作者: collagen 時間: 2025-3-28 04:14 作者: Defiance 時間: 2025-3-28 08:47
Lecture Notes in Computer Scienceration of the phenomenon in a solid has been supplied for two simple point defects in crystalline silicon—the lattice vacancy and interstitial boron. The experiments leading to this identification are described and mechanisms for this remarkable phenomenon are discussed.作者: 壓倒 時間: 2025-3-28 12:33
Springer Topics in Signal Processinguctor heterostructures is studied “in situ” for the GaAs/Ge system. Electronic Raman scattering is used widely to investigate subband energies and carrier concentrations in space charge layers at semiconductor interfaces as well as in superlattices.作者: 廚房里面 時間: 2025-3-28 15:47 作者: Atrium 時間: 2025-3-28 21:36 作者: 隱語 時間: 2025-3-29 02:21 作者: 運動的我 時間: 2025-3-29 07:04 作者: 裹住 時間: 2025-3-29 08:37 作者: 協(xié)奏曲 時間: 2025-3-29 14:51
The fractional quantum hall effect,imensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to . . = h/作者: 踉蹌 時間: 2025-3-29 18:37
Lattice distortion, elastic interaction, and phase transitions of hydrogen in metals, an elastic interaction between hydrogen. This elastic interaction is the relevant long range interaction for the phase transition α?? of hydrogen in niobium. The α and ? phase show a close analogy to the gas and liquid phase of, a real fluid. There is, however, an important difference which is also作者: 承認 時間: 2025-3-29 23:11 作者: reperfusion 時間: 2025-3-30 01:33 作者: 清澈 時間: 2025-3-30 05:40
Transport and recombination in hydrogenated amorphous silicon,its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.作者: tariff 時間: 2025-3-30 08:18 作者: perjury 時間: 2025-3-30 14:31
Chalcogens as point defects in silicon,doped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma
