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標題: Titlebook: Advances in Scanning Probe Microscopy; Toshio Sakurai,Yousuke Watanabe Book 2000 Springer-Verlag Berlin Heidelberg 2000 AFM.Adsorption.Exp [打印本頁]

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書目名稱Advances in Scanning Probe Microscopy讀者反饋學(xué)科排名





作者: 向外才掩飾    時間: 2025-3-21 23:23

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作者: construct    時間: 2025-3-22 20:01
Panoramic Spherical Video — The Space Ballrincipal reconstructions found on the (001) surface of III–V compound semiconductors, made during the first decade following the invention of Scanning Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as Ga
作者: 擦掉    時間: 2025-3-23 01:10

作者: 有助于    時間: 2025-3-23 02:37
Toshio Sakurai,Yousuke WatanabeProvides introduction to selected theoretical and experimental aspects of particular current interest in this rapidly developing field.Of interest to newcomers and established workers alike
作者: 后天習(xí)得    時間: 2025-3-23 09:02
Advances in Materials Researchhttp://image.papertrans.cn/a/image/149633.jpg
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Advances in Scanning Probe Microscopy978-3-642-56949-4Series ISSN 1435-1889
作者: photophobia    時間: 2025-3-23 15:06
Mohammad A. Rajabi,J. A. Rod BlaisIn this paper, after a brief review of the mesoscopic (local) work function, we present our recent studies using Scanning Tunneling Microscopy. We discuss the thickness dependence of the work function for Au/Cu(111) and Pd/Cu(111), the potential profile on Au(111) and Cu(111) steps, and the work function on reconstructed S/Pt (111).
作者: BROTH    時間: 2025-3-23 20:26
Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy,In this paper, after a brief review of the mesoscopic (local) work function, we present our recent studies using Scanning Tunneling Microscopy. We discuss the thickness dependence of the work function for Au/Cu(111) and Pd/Cu(111), the potential profile on Au(111) and Cu(111) steps, and the work function on reconstructed S/Pt (111).
作者: irradicable    時間: 2025-3-23 23:46
https://doi.org/10.1007/978-3-642-56949-4AFM; Adsorption; Experiment; Fulleren; Fullerene; REM; STM
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Maria Rosaria Sessa,Francesco Sicaond (DB) structures. Electronic structures of DB wires are studied using STS. The wires composed of both unpaired DBs and paired DBs show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results agree well with first-principles theoretical calculations. The
作者: 嚴厲批評    時間: 2025-3-24 11:49

作者: 現(xiàn)存    時間: 2025-3-24 16:57
A Resilient Web Caching Architectureted in the early days of STM. However, in recent experiments, barrier-height imaging has been revived to procure unique information which cannot be obtained by other imaging methods. In these experiments, the sensitivity of the barrier height to the sample work function has been utilized for element
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作者: parasite    時間: 2025-3-25 01:59
Book 2000s book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re- search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their a
作者: Postulate    時間: 2025-3-25 06:36
Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfacond (DB) structures. Electronic structures of DB wires are studied using STS. The wires composed of both unpaired DBs and paired DBs show a finite density of states at the Fermi level and do not show semiconductive band gaps. The results agree well with first-principles theoretical calculations. The
作者: Optic-Disk    時間: 2025-3-25 10:20

作者: AGONY    時間: 2025-3-25 12:56
Apparent Barrier Height and Barrier-Height Imaging of Surfaces,ted in the early days of STM. However, in recent experiments, barrier-height imaging has been revived to procure unique information which cannot be obtained by other imaging methods. In these experiments, the sensitivity of the barrier height to the sample work function has been utilized for element
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Atomic Structure of 6H-SiC (0001) and (000,),or sections. The first consists of a summary of surface preparation procedures and the experimental methods used for the work covered by this article. This is followed by a discussion of the progress which has been made in the determination of the atomic structure and composition of the numerous sur
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作者: Coma704    時間: 2025-3-27 05:01
,Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces,rincipal reconstructions found on the (001) surface of III–V compound semiconductors, made during the first decade following the invention of Scanning Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as Ga
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作者: Mangle    時間: 2025-3-27 13:55
1435-1889 terest to newcomers and established workers alikeThere have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switze
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作者: Anticonvulsants    時間: 2025-3-28 01:04
Panoramic Spherical Video — The Space Ball Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as GaSb, AlSb and InSb, and also nitrides (GaN), with special emphasis on GaAs(001).
作者: 刪減    時間: 2025-3-28 05:20

作者: 現(xiàn)暈光    時間: 2025-3-28 07:01
,Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces, Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as GaSb, AlSb and InSb, and also nitrides (GaN), with special emphasis on GaAs(001).
作者: 雪上輕舟飛過    時間: 2025-3-28 12:27
Book 2000and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the ‘scanning probe microscopy (SPM)‘ family. SPM is not just the most powerful microscope for scientists to
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作者: Irrepressible    時間: 2025-3-28 22:29
Atomic Structure of 6H-SiC (0001) and (000,),face phases of clean 6H crystals. Finally we describe work on surface phonons of 6H-SiC (0001) and adsorption of Ga on the SiC surface as related to developments in the use of 6H-SiC as substrate for growth of III-nitrides.




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