標題: Titlebook: Advances in Rapid Thermal and Integrated Processing; Fred Roozeboom Book 1996 Springer Science+Business Media B.V. 1996 Metall.Semiconduct [打印本頁] 作者: 高出來的名詞 時間: 2025-3-21 16:29
書目名稱Advances in Rapid Thermal and Integrated Processing影響因子(影響力)
書目名稱Advances in Rapid Thermal and Integrated Processing影響因子(影響力)學(xué)科排名
書目名稱Advances in Rapid Thermal and Integrated Processing網(wǎng)絡(luò)公開度
書目名稱Advances in Rapid Thermal and Integrated Processing網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱Advances in Rapid Thermal and Integrated Processing被引頻次
書目名稱Advances in Rapid Thermal and Integrated Processing被引頻次學(xué)科排名
書目名稱Advances in Rapid Thermal and Integrated Processing年度引用
書目名稱Advances in Rapid Thermal and Integrated Processing年度引用學(xué)科排名
書目名稱Advances in Rapid Thermal and Integrated Processing讀者反饋
書目名稱Advances in Rapid Thermal and Integrated Processing讀者反饋學(xué)科排名
作者: MUTE 時間: 2025-3-21 23:29 作者: 柱廊 時間: 2025-3-22 01:03
Wafer Emissivity In RTP,cavity with a small opening radiates energy solely as a function of temperature [1]. In 1896 Wien published his theoretical treatment of blackbody radiation based purely on thermodynamics [2]. Wien correctly described the . blackbody wavelengths as a function of temperature, but failed to produce an作者: 枯萎將要 時間: 2025-3-22 08:38 作者: Barter 時間: 2025-3-22 10:58
Single-Wafer Process Integration and Process Control Techniques,es. Most of these fabrication processes have been dominated by hot-wall batch furnaces. Many other unit processes, however, are already performed in single-wafer processors. These include plasma etch, plasma-enhanced dielectric deposition, metal deposition, ion implantation, and microlithography. Th作者: CONE 時間: 2025-3-22 16:21
Rapid Thermal O2-Oxidation and N2O-Oxynitridation,Device scaling for future technologies, and low power applications (i.e., wireless, laptop) will further drive gate dielectric thicknesses down to 3.5 nm, close to the oxide tunneling limit. The electrical properties, reliability and manufacturability of such thin dielectrics are of enormous importa作者: 獸群 時間: 2025-3-22 20:28
Integrated Pre-Gate Dielectric Cleaning and Surface Preparation,, with gate dielectrics approximately 10 nm thick. 0.25 μm technology, now in research, will require 7 nm gate dielectrics. Gates will further shrink to 4.5 nm for 0.18 μm technology by the turn of the century. It is important to understand that as the gate dielectric thickness decreases, the Si/SiO作者: 北極人 時間: 2025-3-22 21:19 作者: PAGAN 時間: 2025-3-23 03:37 作者: 傲慢人 時間: 2025-3-23 06:21
Modeling Approaches for Rapid Thermal Chemical Vapor Deposition,VD), has been demonstrated for a wide range of typical microelectronics manufacturing processes [1], including growth of silicon [2], silicon oxide [3], and silicon nitride [4], as well as new processes, such as the growth of silicon germanium alloys [5]. These CVD systems share common features of g作者: 小卷發(fā) 時間: 2025-3-23 10:21 作者: Lumbar-Stenosis 時間: 2025-3-23 16:30
Rapid Thermal Multiprocessing for a Programmable Factory for Manufacturing of ICs,cation, which may offer more economical small or large scale production, higher flexibility to accommodate many products on several processes, and faster turnaround to hasten product innovation [1–3]. This approach is based on a new generation of single-wafer, flexible, multifunctional equipment wit作者: 機構(gòu) 時間: 2025-3-23 20:26
RTCVD Integrated Processing for Photovoltaic Application,this strong motivation are the limitation of the conventional resources and the necessity to stop air pollution resulting from the mass consumption of fossil fuels. Solar energy is the only energy which guarantees a sustainable development. This energy is received by the earth in almost abundant qua作者: 抵制 時間: 2025-3-24 01:47 作者: ANTE 時間: 2025-3-24 05:43 作者: 多余 時間: 2025-3-24 09:54 作者: 不真 時間: 2025-3-24 12:31
Rapid Thermal Processing of Contacts and Buffer Layers for Compound Semiconductor Device Technologyureable. Since 1980 [1] RTP has been applied to achieving control of doping profiles, achieving implant activation and the application of advanced metallization systems. Since 1990 [2], RTP in the form of pulsed excimer laser processing has been applied to molecular beam epitaxial growth (MBE) for t作者: hemorrhage 時間: 2025-3-24 17:34 作者: PACK 時間: 2025-3-24 19:25
NATO Science Series E:http://image.papertrans.cn/a/image/149544.jpg作者: 敲竹杠 時間: 2025-3-25 01:49
Po-Whei Huang,Cheng-Hsiung Lee,Phen-Lan Linprocessors such as Intel’s Pentium or, even more powerful, the PowerPC, jointly designed by Apple, IBM and Motorola. Both products were originally designed in a 0.5 pm, 3.3 Volt CMOS (complimentary metal oxide semiconductor) technology. The Power PC contains 3.6 million transistors onto a chip, meas作者: 凌辱 時間: 2025-3-25 07:09
Evolutionary Regular Substitution Boxes, belief may not be true, however it is believed by a substantial percentage of the participants in the industry. I would contend that wafer temperature . are the key barriers to widening the application of RTP [1 – 3]. As an example, physical vapor deposition, PVD is in widely spread use throughout 作者: 音樂戲劇 時間: 2025-3-25 09:02 作者: Anthropoid 時間: 2025-3-25 14:28
Asem Kasem,A. Ammar Ghaibeh,Hiroki Moriguchilectronics fabrication will require an improvement of the existing (...) control technology for these systems” [2]. Obviously these two citations have a very similar meaning. They both come from review papers presented at two international meetings. The only difference is that the first meeting was 作者: monochromatic 時間: 2025-3-25 16:33 作者: subacute 時間: 2025-3-25 23:00
https://doi.org/10.1007/978-3-319-48517-1Device scaling for future technologies, and low power applications (i.e., wireless, laptop) will further drive gate dielectric thicknesses down to 3.5 nm, close to the oxide tunneling limit. The electrical properties, reliability and manufacturability of such thin dielectrics are of enormous importa作者: 食草 時間: 2025-3-26 03:59 作者: Outspoken 時間: 2025-3-26 07:05 作者: 過濾 時間: 2025-3-26 09:39
Zara Laila Abdul Hadi,Thien Wan Aucroelectronics manufacturing technology for oxidation, implant annealing, and silicidation [1]. The continued evolution towards shallower junctions and thinner oxides is likely to further drive thermal processes toward RTP and away from furnaces. However, for this transition to take place, RTP must 作者: 忘恩負義的人 時間: 2025-3-26 16:01 作者: BINGE 時間: 2025-3-26 18:14 作者: hemorrhage 時間: 2025-3-26 22:16
P. Herbert Raj,P. Ravi Kumar,P. Jelcianacation, which may offer more economical small or large scale production, higher flexibility to accommodate many products on several processes, and faster turnaround to hasten product innovation [1–3]. This approach is based on a new generation of single-wafer, flexible, multifunctional equipment wit作者: optional 時間: 2025-3-27 05:05
https://doi.org/10.1007/978-3-030-03302-6this strong motivation are the limitation of the conventional resources and the necessity to stop air pollution resulting from the mass consumption of fossil fuels. Solar energy is the only energy which guarantees a sustainable development. This energy is received by the earth in almost abundant qua作者: 高談闊論 時間: 2025-3-27 08:43
Khairil Imran Ghauth,Muhammad Shurazi Sukhurion is mainly focused on the design of MESC (Modular Equipment Standards Committee) compatible cluster tools for RTP applications which is followed by some remarks concerning the scale-up in terms of wafer size. Due to the fact, that the design of the cluster modules was started from the basic desig作者: airborne 時間: 2025-3-27 10:22 作者: HAWK 時間: 2025-3-27 16:26
Studies in Computational Intelligencetechnology is required for manufacturing processes. However, until recently RTP technology has been almost ignored by manufacturing due to low reproducibility in processing. The main reason for this situation is the fact that an alternative processing technology was widely available: the conventiona作者: Tailor 時間: 2025-3-27 18:42
Optimal Control Based on Fuzzy Logicureable. Since 1980 [1] RTP has been applied to achieving control of doping profiles, achieving implant activation and the application of advanced metallization systems. Since 1990 [2], RTP in the form of pulsed excimer laser processing has been applied to molecular beam epitaxial growth (MBE) for t作者: Binge-Drinking 時間: 2025-3-28 00:37
J?rg Gebhardt,Aljoscha Klose,Jan Wendlerk. Other important storage technologies are optical, magneto-optical and magnetic recording. The subject of this chapter is related to high-density ., a technology that has existed now for over 100 years: the first proposal was published in 1888 [1].作者: 舊石器時代 時間: 2025-3-28 04:39 作者: Habituate 時間: 2025-3-28 07:42
Rapid Thermal Processing of Magnetic Thin Films for Data Storage Devices,k. Other important storage technologies are optical, magneto-optical and magnetic recording. The subject of this chapter is related to high-density ., a technology that has existed now for over 100 years: the first proposal was published in 1888 [1].作者: Psa617 時間: 2025-3-28 13:46 作者: CLOUT 時間: 2025-3-28 18:20
The Thermal Radiative Properties of Semiconductors,The development of rapid thermal processing (RTP) techniques for the fabrication of advanced electronic devices requires a detailed understanding of the thermal radiative properties of semiconductor wafers. Fig. 1 illustrates the main reasons to be interested in these properties:作者: 我邪惡 時間: 2025-3-28 19:01 作者: oblique 時間: 2025-3-29 01:50 作者: 軌道 時間: 2025-3-29 05:05 作者: 繁榮中國 時間: 2025-3-29 08:37
Studies in Computational Intelligencetechnology is required for manufacturing processes. However, until recently RTP technology has been almost ignored by manufacturing due to low reproducibility in processing. The main reason for this situation is the fact that an alternative processing technology was widely available: the conventional batch processing furnace.作者: 難解 時間: 2025-3-29 13:40
J?rg Gebhardt,Aljoscha Klose,Jan Wendlerk. Other important storage technologies are optical, magneto-optical and magnetic recording. The subject of this chapter is related to high-density ., a technology that has existed now for over 100 years: the first proposal was published in 1888 [1].作者: 歡樂東方 時間: 2025-3-29 19:03
Book 1996ics and materials science. Here,the physics and engineering of this technology are discussed at thegraduate level. Three interrelated areas are covered. First, thethermophysics of photon-induced annealing of semiconductor and relatedmaterials, including fundamental pyrometry and emissivity issues, t作者: Macronutrients 時間: 2025-3-29 21:49
Introduction: History and Perspectives of Rapid Thermal Processing,uring 196 mm. [1]. In the course of 1995 the line width has been further reduced to 0.35 pm for the development of processors with some 5 metal levels, such as the Pentium Pro (or P6) processor, as part of a series of continuously shrinking microelectronics, which started after the first planar single transistor in 1959 [2].作者: GEN 時間: 2025-3-30 00:22
Temperature and Process Control in Rapid Thermal Processing,held in 1987, and the second in 1994. Obviously, process control for RTP is still an important issue. In the following, after a brief historical presentation, we will develop the background associated with RTP process control, together with the state-of-the-art. The specific issue of temperature measurement is presented in Chapter 3.作者: Bridle 時間: 2025-3-30 07:11 作者: aerobic 時間: 2025-3-30 09:38
Integrated Pre-Gate Dielectric Cleaning and Surface Preparation,. interfacial region becomes a more significant part of the gate dielectric. This makes pre-gate dielectric surface preparation one of the most critical steps in integrated circuit manufacturing [1–5].作者: DRILL 時間: 2025-3-30 15:51 作者: NOT 時間: 2025-3-30 20:11 作者: 哄騙 時間: 2025-3-30 22:02 作者: incision 時間: 2025-3-31 03:03
Optimal Control Based on Fuzzy Logicemphasis in the present paper is to review the GaAs device technology, the material problems and device structures and to show that RTP has removed key material problems which were bottlenecks in achieving a fabrication process which is reliable and high yield.作者: homocysteine 時間: 2025-3-31 08:44
Po-Whei Huang,Cheng-Hsiung Lee,Phen-Lan Linuring 196 mm. [1]. In the course of 1995 the line width has been further reduced to 0.35 pm for the development of processors with some 5 metal levels, such as the Pentium Pro (or P6) processor, as part of a series of continuously shrinking microelectronics, which started after the first planar single transistor in 1959 [2].作者: 連鎖 時間: 2025-3-31 11:34
Asem Kasem,A. Ammar Ghaibeh,Hiroki Moriguchiheld in 1987, and the second in 1994. Obviously, process control for RTP is still an important issue. In the following, after a brief historical presentation, we will develop the background associated with RTP process control, together with the state-of-the-art. The specific issue of temperature measurement is presented in Chapter 3.作者: 撤退 時間: 2025-3-31 14:31 作者: Ceramic 時間: 2025-3-31 21:22 作者: 疲憊的老馬 時間: 2025-4-1 01:21
Zara Laila Abdul Hadi,Thien Wan Auovercome current limitations in terms of temperature measurement and spatial temperature control, as well as satisfy increasingly tight performance specifications [2] . Accurate temperature measurements are needed to avoid wafer to wafer drift and to serve as input to lamp feedback control schemes minimizing spatial temperature variations.作者: Plaque 時間: 2025-4-1 02:42
Summary, Conclusions, and Future Work,tional silicon-epi growth with its high deposition temperatures is becoming more and more incompatible with modern wafer processing. Outdiffusion of dopants and autodoping preclude the use of conventional epi in tailoring dopant profiles in e.g. the base of a bipolar transistor.作者: 歡呼 時間: 2025-4-1 09:50
Rapid Thermal O2-Oxidation and N2O-Oxynitridation,espectively. I will compare and contrast current furnace oxidation technology with RTO technology, and come to the conclusion that there are several advantages to growing dielectrics at the higher temperatures that RTO can achieve. However, RTO must mature to be competitive with furnace oxidation.作者: 有權(quán)威 時間: 2025-4-1 13:54 作者: 透明 時間: 2025-4-1 16:08
0168-132X plied physics and materials science. Here,the physics and engineering of this technology are discussed at thegraduate level. Three interrelated areas are covered. First, thethermophysics of photon-induced annealing of semiconductor and relatedmaterials, including fundamental pyrometry and emissivity作者: 先驅(qū) 時間: 2025-4-1 20:01
https://doi.org/10.1007/978-3-030-68133-3g explored that involve substitute sources of energy for the deposition and growth chemistry. Over the years, photo-induced processing has in particular received considerable attention [1–3]. One advantage of photoprocessing is that the surface is not subjected to damaging ionic bombardment which can be the case in plasma assisted systems [4,5].
