標題: Titlebook: Widegap II–VI Compounds for Opto-electronic Applications; Harry E. Ruda (Assistant Professor) Book 1992 Springer Science+Business Media Do [打印本頁] 作者: Amalgam 時間: 2025-3-21 17:42
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作者: enflame 時間: 2025-3-21 23:30
R. M. Parkginia Tech has had funded research in this area, largely through its Digital Library Research Laboratory. This book is the first in a four book series that reports our key findings and current research investigations. Underlying this book series are six completed dissertations (Gon?alves, Kozievitch作者: 音樂等 時間: 2025-3-22 01:48 作者: 淺灘 時間: 2025-3-22 08:26 作者: 吹氣 時間: 2025-3-22 11:10 作者: 河流 時間: 2025-3-22 13:16
D. Shawhen L?sung von aktuellen Problemstellungen. Diese Methoden, die st?rungstheoretischer oder nichtst?rungstheoretischer Natur sein k?nnen, sind oft für die einzelnen Gebiete spezifisch, und es würde den Rahmen eines Lehrbuchs sprengen, wollte man sie vollst?ndig und in der gebotenen Ausführlichkeit da作者: inundate 時間: 2025-3-22 18:30
J. Woodsnicht nur im Wachstumsproze? des Individuums, sondern auch im Haushalt der Gesamtgesellschaft eine notwendige Funktion hat. Das eine ist nicht eine Folge . anderen. Es wird anthropologisch alles schief, wenn wir anfangen, darüber zu philosophieren, was nun eigentlich um wessentwillen da sei, das Ind作者: 使害羞 時間: 2025-3-22 22:40 作者: HOWL 時間: 2025-3-23 04:04
A. Millerandere Güter zu beschaffen. Nunmehr wollen wir untersuchen, ob und welche ?nderungen an den Ergebnissen vorgenommen werden müssen, wenn wir annehmen, da? dem einzelnen Geldstück auch subjektiver Eigenwert für seinen Besitzer im Hinblick darauf zukommt, da? er das Geldstück, wenn auch allenfalls sein作者: choleretic 時間: 2025-3-23 09:11
M. Yamaguchibei dem Wirtschafter alle jene Bedürfnisse zu befriedigen, die mit Gütern der betreffenden Art überhaupt befriedigt werden k?nnen. Im engeren Sinne ist der Bedarf jene Menge an anzuschaffenden Gütern einer Art, auf die sich wirtschaftliche Erw?gungen des Wirtschafters beziehen. Der Bedarf in diesem 作者: 喃喃而言 時間: 2025-3-23 11:39 作者: 允許 時間: 2025-3-23 14:11 作者: Foam-Cells 時間: 2025-3-23 20:58
https://doi.org/10.1007/978-1-4615-3486-0electronics; epitaxy; material; optical properties; phase; semiconductor; stability; transmission作者: pester 時間: 2025-3-24 00:17 作者: motivate 時間: 2025-3-24 03:40 作者: 過于平凡 時間: 2025-3-24 06:58
electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insi作者: 寡頭政治 時間: 2025-3-24 13:42
Bulk growth of widegap II–VI single crystalss. Two other reasons why a high-quality crystal is important are to characterize the compounds and to find a new function. Because the crystals of these compound semiconductors are not perfect but only nearly perfect, it is essential to control their impurities and native defects so the materials can be put to practical use.作者: Corporeal 時間: 2025-3-24 18:44
Doping and conductivity in widegap II–VI compoundsnd on available dopants, are for instance those by Bhargava [2, 3], Dean [4], Marfaing [5], Neumark [6], Park and Shin [7] and Pautrat . [8]. In this presentation, I shall primarily emphasize work since 1981, i.e. that not covered by Hartmann . [1], as well as including some new concepts.作者: antedate 時間: 2025-3-24 19:48 作者: Generalize 時間: 2025-3-25 02:04 作者: 看法等 時間: 2025-3-25 06:42 作者: penance 時間: 2025-3-25 09:26 作者: 高原 時間: 2025-3-25 13:52
ZnSe growth by conventional molecular beam epitaxy: a review of recent progress, have significantly advanced both our understanding of the material itself as well as the MBE technology as it pertains to ZnSe epitaxial growth. The term, conventional MBE, is taken to mean epitaxial growth in which the constituent elements, in this case Zn and Se, are derived from Knudsen-style e作者: 態(tài)學 時間: 2025-3-25 16:27 作者: 河潭 時間: 2025-3-25 21:27
Quantum-sized microstructures of wide bandgap II–VI semiconductorss of II–VI materials and their alloys. The renewed interest in the family of II–VI semiconductors is thus directly related to their successful epitaxial growth by molecular beam epitaxy (MBE), atomic layer epitaxy (ALE), metal–organic chemical vapour deposition (MOCVD), and metal–organic molecular b作者: 衍生 時間: 2025-3-26 00:11 作者: kindred 時間: 2025-3-26 05:30
Transmission electron microscopy of layered structures of widegap II–VI semiconductorse blue and green spectral ranges. Difficulty in obtaining both p-type and n-type conductive forms of these materials, however, has prevented progress towards the realization of such opto-electronic devices. In the past decade, new low-temperature epitaxial growth techniques represented by molecular 作者: sulcus 時間: 2025-3-26 11:18
Self- and impurity diffusion processes in widegap II–VI materials fundamental level the diffusion process may involve non-defect or defect mechanisms: experimental diffusivities can help to identify the type of mechanism and underpin theoretical understanding of atom movements and defects. Diffusion is important in both material and device technology through cont作者: Institution 時間: 2025-3-26 12:37
Doping and conductivity in widegap II–VI compoundsI compounds and their general properties has been presented by Hartmann . in 1982 [1]. Additional reviews, focusing more on the conductivity problem and on available dopants, are for instance those by Bhargava [2, 3], Dean [4], Marfaing [5], Neumark [6], Park and Shin [7] and Pautrat . [8]. In this 作者: CURB 時間: 2025-3-26 18:53 作者: Gingivitis 時間: 2025-3-27 01:00
Preparation of widegap II–VI homojunction devices by stoichiometry controlntrolled crystals. As shown in Table 13.1, ZnSe and most of the other widegap II–VI compounds showed n-type conductivity, but p-type crystals were not available even with heavy dopings of acceptor impurities. The exception was ZnTe, which showed only p-type conductivity. Because of these characteris作者: 變化 時間: 2025-3-27 02:48 作者: DEVIL 時間: 2025-3-27 08:31
Implanted widegap II–VI materials for electro-optic applications and electron-beam-pumped devicesrier injection light-emitting diodes (laser diodes). However, there are few studies on implantation into widegap II–VI materials [1,2] compared with those into Si and III–V compound materials. In addition, in II–VI materials there are self-compensation problems resulting from lattice defects induced作者: 步兵 時間: 2025-3-27 10:45
Book 1992 applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in re作者: Barrister 時間: 2025-3-27 16:07
ZnSe growth by conventional molecular beam epitaxy: a review of recent progressffusion sources containing solid-element material. The review is concerned solely with recent advances in the field of conventional MBE growth of ZnSe and does not include discussion on technologically related approaches to ZnSe growth such as metal–organic molecular beam epitaxy (MOMBE), for example.作者: AGONY 時間: 2025-3-27 20:09
II–VI electroluminescent deviceselief, an extensive research effort in the 1950s and 1960s led to the manufacture of a variety of plastic and ceramic EL lamps. These were of low intensity, but found a range of applications as dark room safelights, exit signs in areas of reduced lighting, clock and dial faces etc.作者: 預測 時間: 2025-3-27 23:34 作者: 發(fā)酵劑 時間: 2025-3-28 04:27 作者: crescendo 時間: 2025-3-28 06:22 作者: deficiency 時間: 2025-3-28 10:24 作者: 易發(fā)怒 時間: 2025-3-28 16:50 作者: 量被毀壞 時間: 2025-3-28 21:04
Photo-assisted metal-organic vapour phase epitaxy of zinc chalcogenidesloped as novel precursors, but the growth temperature must be as high as 500°C [9–12]. The photo-assisted technique, therefore, is a promising tool for reduction in growth temperature and for obtaining high-quality epilayers when using these source combinations. By this technique, selective growth o作者: SEEK 時間: 2025-3-29 02:12 作者: Carcinogenesis 時間: 2025-3-29 05:08 作者: 寬敞 時間: 2025-3-29 09:30 作者: 不容置疑 時間: 2025-3-29 12:51
Self- and impurity diffusion processes in widegap II–VI materialsn a period of 10.s (e.g. growth of a multiple quantum well (MQW)) diffusivities must be ? 10. cm. s. if diffusional spread should not exceed ~ 10 ?. Over a period of a year diffusivities must be ? 10. cm. s. to contain any spread to < 10 ?.作者: agitate 時間: 2025-3-29 18:56 作者: epicondylitis 時間: 2025-3-29 22:47 作者: Ancestor 時間: 2025-3-30 03:35
Widegap II–VI Compounds for Opto-electronic Applications作者: insurgent 時間: 2025-3-30 05:53
Widegap II–VI Compounds for Opto-electronic Applications978-1-4615-3486-0作者: CANE 時間: 2025-3-30 11:26 作者: 含糊其辭 時間: 2025-3-30 13:19
