標(biāo)題: Titlebook: 3D Flash Memories; Rino Micheloni Book 2016 Springer Science+Business Media Dordrecht 2016 3-D NAND Flash Memories.3-D Flash Memory Techno [打印本頁] 作者: energy 時(shí)間: 2025-3-21 19:37
書目名稱3D Flash Memories影響因子(影響力)
書目名稱3D Flash Memories影響因子(影響力)學(xué)科排名
書目名稱3D Flash Memories網(wǎng)絡(luò)公開度
書目名稱3D Flash Memories網(wǎng)絡(luò)公開度學(xué)科排名
書目名稱3D Flash Memories被引頻次
書目名稱3D Flash Memories被引頻次學(xué)科排名
書目名稱3D Flash Memories年度引用
書目名稱3D Flash Memories年度引用學(xué)科排名
書目名稱3D Flash Memories讀者反饋
書目名稱3D Flash Memories讀者反饋學(xué)科排名
作者: GRACE 時(shí)間: 2025-3-21 22:27 作者: mydriatic 時(shí)間: 2025-3-22 02:51
https://doi.org/10.1007/978-3-319-03677-9undamental technology used to create the NAND memory cell, and (3) changes in usages in different segments which have made SSDs the critical growth segment in NAND. Let us examine all these changes in a little more detail.作者: 昏暗 時(shí)間: 2025-3-22 04:37
https://doi.org/10.1007/978-3-642-95617-1ackaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stacking and 3D monolithic technologies. This chapter covers the former, while the latter is the main subject of this book.作者: Antarctic 時(shí)間: 2025-3-22 12:34
Three-Dimensional Imaging: Technical Aspectse world. This is especially true when looking at planar (2D) ultra-scaled (e.g. 15nm) NAND. Generally speaking, LDPC offers higher correction capabilities, but BCH remains a good solution when bandwidth requirements are very stringent. This chapter provides an overview of both BCH and LDPC state-of-the-art solutions.作者: aggressor 時(shí)間: 2025-3-22 13:29
https://doi.org/10.1007/978-3-319-03677-9roblems experimentally observed in different 3D CT cell concepts is reported. Finally, 3D FG memory concept is briefly introduced in order to understand the related reliability implications, and a comparison between 3D CT and 3D FG arrays is provided in terms of reliability and expected performances.作者: 泄露 時(shí)間: 2025-3-22 19:23 作者: NAIVE 時(shí)間: 2025-3-22 22:05
Three-Dimensional Imaging: Technical Aspectsl 3D-NAND flash SSD due to SCM’s fast speed. In addition, the performance of the SSD is workload dependent. Thus, it is meaningful to obtain the design guidelines of 3D NAND flash for both all 3D-NAND flash SSD and hybrid SCM/3D-NAND flash SSD with representative real-world workloads.作者: Veneer 時(shí)間: 2025-3-23 02:36
The Business of NAND,aus ist dort wesentlich nach Th. H. . Karte der Landwirtschaftsgebiete (.) angegeben. Sie verl?uft von Hamilton Inlet an der Nordostküste Labradors unter 53° westw?rts nach der Jamesbucht der Hudsonbai, von da nordwestw?rts zum Grossen Sklavensee, erreicht den Mackenzie unter 63°, biegt zurück auf 6作者: Presbyopia 時(shí)間: 2025-3-23 08:32 作者: 寡頭政治 時(shí)間: 2025-3-23 09:46
3D Floating Gate NAND Flash Memories,nzentration (Aktivit?t) der Metallionen in der L?sung und der spezifischen Art des Metalles abh?ngt. . (1888) lehrte, da? ein Metall eine charakteristische L?sungstension besitzt, vergleichbar mit irgendeiner l?slichen Substanz, jedoch mit dem Unterschied, da? das Metall Ionen in die L?sung schickt.作者: 最小 時(shí)間: 2025-3-23 16:41 作者: JAMB 時(shí)間: 2025-3-23 19:42 作者: Ancillary 時(shí)間: 2025-3-23 23:09 作者: Hangar 時(shí)間: 2025-3-24 02:46
3D Multi-chip Integration and Packaging Technology for NAND Flash Memories,aus und wandert etwas sp?ter, ungef?hr zum Zeitpunkt des Descensus der Herzanlage, caudalw?rts. Dabei kommt das umgebende, namentlich die Blutgef??e des Truncus arteriosus bildende mesenchymale Gewebe mit. Diese vom Foramen caecum ausgehende Ausstülpung bildet bald zwei Lappen, die vorerst die Form 作者: 混合 時(shí)間: 2025-3-24 08:13
BCH and LDPC Error Correction Codes for NAND Flash Memories,das Kind, als auch auf eine Minimierung der Symptomatik bei konnatal infizierten Kindern positiv auswirken, haben die Beobachtungen der übertragungsrate hei Frauen mit Sekund?rinfektionen im Vergleich zu solchen mit Prim?rinfektionen, und der Symptomatik bei Kindern nach Se?kund?rinfektion der Mutte作者: ENACT 時(shí)間: 2025-3-24 11:05
System-Level Considerations on Design of 3D NAND Flash Memories,t wahrscheinlich ohne Gips behandelt haben unter richtiger Einsch?tzung der Weichteilbesch?digung, wenn er nach seinem klinischen Instinkt gehandelt h?tte. Man kann nicht allgemein behaupten, Weichteilverletzungen k?nnten schlimmer als Knochenrisse sein. Eines der gew?hnlichsten Beispiele, bei dem d作者: 單調(diào)性 時(shí)間: 2025-3-24 15:12
Back Mattert wahrscheinlich ohne Gips behandelt haben unter richtiger Einsch?tzung der Weichteilbesch?digung, wenn er nach seinem klinischen Instinkt gehandelt h?tte. Man kann nicht allgemein behaupten, Weichteilverletzungen k?nnten schlimmer als Knochenrisse sein. Eines der gew?hnlichsten Beispiele, bei dem d作者: mechanical 時(shí)間: 2025-3-24 20:03 作者: Bereavement 時(shí)間: 2025-3-25 01:55
3D Stacked NAND Flash Memories,k). Die Umfangmessungen dieser Gelenke erlauben Rückschlüsse über Ver?nderungen der Schwellungen im Krankheits-verlauf. Desgleichen sind Beinverkürzungen durch entsprechende Messungen zu erfassen (Abb. 98 b, 170 a und b). Variable Beinl?n-gendifferenzen, wie sie bei Beckenverwringungen beobachtet we作者: 我不明白 時(shí)間: 2025-3-25 07:05 作者: 甜食 時(shí)間: 2025-3-25 11:09 作者: 難理解 時(shí)間: 2025-3-25 13:51 作者: Definitive 時(shí)間: 2025-3-25 16:05 作者: colostrum 時(shí)間: 2025-3-25 21:47
3D Multi-chip Integration and Packaging Technology for NAND Flash Memories,tarb., 1961, u. a.). Immerhin scheint es einigerma?en gesichert, da? das laterale Gewebe mit den median entstandenen Lappen eine nicht mehr zu trennende Einheit bildet, da? aber bei fehlender mediolateraler Vereinigung, also z. B. bei Schilddrüsenektopien, die Branchialbogenanteile kein funktioniere作者: 駁船 時(shí)間: 2025-3-26 01:45 作者: BURSA 時(shí)間: 2025-3-26 06:26
System-Level Considerations on Design of 3D NAND Flash Memories,bandes gekommen. Eine sp?te Verschiebung des Sprungbeins oder erneute Subluxation im oberen Sprunggelenk kann auftreten, wenn eine zu frühe Belastung ohne Gipsverband erfolgt. Andererseits wird die Arbeitsf?higkeit der Patienten durch unn?tige, ihnen aber aufgezwungene Gipsverb?nde verhindert, nur w作者: 情感 時(shí)間: 2025-3-26 12:03 作者: 從屬 時(shí)間: 2025-3-26 16:04
Book 2016r a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cros作者: 食草 時(shí)間: 2025-3-26 18:24 作者: 謊言 時(shí)間: 2025-3-26 23:05
s well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cros978-94-024-1365-6978-94-017-7512-0作者: temperate 時(shí)間: 2025-3-27 01:27
Bogdan R?biasz,Bart?omiej Gawe?,Iwona Skalnaand compliance with current NAND device specification. In this chapter we focus on the most straightforward 3D architecture, the Stacked one, which is built by using arrays with horizontal channels and horizontal gates: this kind of arrays is a simple stack of planar memories. Drain contacts and bit作者: 躲債 時(shí)間: 2025-3-27 05:26 作者: 廢除 時(shí)間: 2025-3-27 09:54
https://doi.org/10.1007/978-3-642-95617-1fects caused by the thick gate. In fact, to make sure that electrons don’t leak away from the floating gate, gate thickness can’t be too thin. Moreover, since the number of electrons trapped inside the floating gate is less than 100 at 20?nm, losing few electrons can cause severe reliability issues 作者: 厭食癥 時(shí)間: 2025-3-27 16:15
https://doi.org/10.1007/978-3-319-03677-9as seen in its entire history. Since the focus of this book is NAND Flash, we will examine the dramatic changes in (1) the vendor landscape, (2) the fundamental technology used to create the NAND memory cell, and (3) changes in usages in different segments which have made SSDs the critical growth se作者: nurture 時(shí)間: 2025-3-27 19:12
https://doi.org/10.1007/978-3-319-03677-9n terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical mechanisms impacting the reliability of 2D CT NAND will be addressed. Then, a review of the main p作者: GREG 時(shí)間: 2025-3-27 23:22 作者: 去世 時(shí)間: 2025-3-28 05:12 作者: 灰姑娘 時(shí)間: 2025-3-28 07:59 作者: headlong 時(shí)間: 2025-3-28 13:46
M. Oudkerk,S. Mali,S. Tjiam,W. A. Kalendergeometries simultaneously. Transistor geometries are formed by the deep trench through a multiple polysilicon/oxide stack. The most popular cells stacks are Vertical-Channel (VC) and Vertical-Gate (VG). In VC gate-all-around type, the channel is realized by etching a hole through the layers stack in作者: Audiometry 時(shí)間: 2025-3-28 16:20
https://doi.org/10.1007/978-3-642-95617-1nd lower cost. As a matter of fact, the last mainstream memory, NAND Flash memory, was created decades ago. Nowadays, NAND Flash memory, based on metal-oxide-semiconductor field-effect-transistor with an additional floating gate, is still one of the most popular nonvolatile memories. However, its sp作者: Frenetic 時(shí)間: 2025-3-28 20:30
https://doi.org/10.1007/978-3-642-95617-1n the other hand, mainly driven by the success of Solid State Drives (SSDs), capacity requirement has grown dramatically to the extent that standard packaging (and design) techniques are no longer able to sustain the pace. In order to solve this issue, two approaches are possible: advanced die stack作者: 諂媚于性 時(shí)間: 2025-3-29 00:39 作者: 耕種 時(shí)間: 2025-3-29 03:10
https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describ作者: expunge 時(shí)間: 2025-3-29 10:29
Three-Dimensional Imaging: Technical Aspectsional (2D) scaling, it is facing various limitations such as lithography cost and cell-to-cell coupling interference. To sustain the trend of bit-cost reduction beyond 10?nm technology node, 3D NAND flash memory is considered as the next generation technique. Further, emerging memories called storag作者: labyrinth 時(shí)間: 2025-3-29 13:59
https://doi.org/10.1007/978-94-017-7512-03-D NAND Flash Memories; 3-D Flash Memory Technology; 3-D planar charge trap technology; Die Stacking F作者: plasma-cells 時(shí)間: 2025-3-29 19:05
978-94-024-1365-6Springer Science+Business Media Dordrecht 2016作者: 感情 時(shí)間: 2025-3-29 20:07 作者: Nonthreatening 時(shí)間: 2025-3-29 23:54
Qingxin Yang,Evgenii V. Kondratenkoh memory die, this density is defined as the ratio between the storage capacity of the die, Die_Capacity, and its silicon area, Die_Size. In this chapter we present some of the most advanced architectures of 3D arrays with vertical channels, which were mainly developed to increase Bit_Density and reduce the Source Line effect.作者: Influx 時(shí)間: 2025-3-30 07:31
https://doi.org/10.1007/978-3-642-95617-1odes and non-binary low-density parity-check (LDPC) codes. Both of these techniques are inspired by traditional coding theory; however, in both cases, we depart from classical approaches and develop new concepts specifically designed to take advantage of inherent channel characteristics that describe non-volatile memories.作者: 壓碎 時(shí)間: 2025-3-30 11:23
Rino MicheloniThe first book to focus on 3D flash memories.Provides details of flash 3D architectures which have never been published before, including a number of 3D cross sections.Offers unique coverage of flash
